JP5551920B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5551920B2 JP5551920B2 JP2009266869A JP2009266869A JP5551920B2 JP 5551920 B2 JP5551920 B2 JP 5551920B2 JP 2009266869 A JP2009266869 A JP 2009266869A JP 2009266869 A JP2009266869 A JP 2009266869A JP 5551920 B2 JP5551920 B2 JP 5551920B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- hole
- post
- conductor post
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004020 conductor Substances 0.000 claims description 329
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- LPLLVINFLBSFRP-UHFFFAOYSA-N 2-methylamino-1-phenylpropan-1-one Chemical group CNC(C)C(=O)C1=CC=CC=C1 LPLLVINFLBSFRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 230000002360 prefrontal effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 47
- 229910000679 solder Inorganic materials 0.000 description 32
- 238000007747 plating Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 22
- 238000003780 insertion Methods 0.000 description 10
- 230000037431 insertion Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 241000132539 Cosmos Species 0.000 description 7
- 235000005956 Cosmos caudatus Nutrition 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 102220193245 rs1057516146 Human genes 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Die Bonding (AREA)
Description
以下、実施例1に係る半導体装置102(図8、図9参照)について説明する。本実施例においては、上記実施形態で示した要素と同一の要素には各々同一の符号を付し、各要素について、より詳細なパラメータを明示する。
以下、実施例2に係る半導体装置101(図1、図2参照)について説明する。本実施例においては、上記実施形態で示した要素と同一の要素には各々同一の符号を付し、各要素について、より詳細なパラメータを明示する。
さらに、実施例1における導体ポスト40の材料を変えた例(実施例3)、並びに実施例1における導体ポスト40の挿入量及び固着面積を変えた例(実施例4、5)についても、許容電流等を測定した。また、実施例2における導体ポスト40の端面寸法(嵌合寸法)を変化させた例(実施例6、比較例1)、導体ポスト40と孔30bとの接続に半田ボールを使用しなかった例(実施例7)についても、許容電流等を測定した。これらの結果を、上記実施例1、2の結果と共に、図27〜図30に示す。図中、試料#11〜#17は、実施例1〜7の半導体装置に相当し、試料#21は、比較例1の半導体装置に相当する。図27には、孔30bや導体33の形状等を示す。図28には、導体ポスト40の材料等を示す。図29には、固着部の固着面積(嵌合面積)等を示す。図30には、許容電流の測定結果を示す。
10a 半導体素子(FWDチップ)
11〜14 電極
11a、12a 電極
20 放熱板
21 電極
30 支持板
30a 絶縁基板
30b 孔
31、32 導体回路
33 導体
34 無電解ニッケル膜
35 無電解金めっき膜
40 導体ポスト
40a 柱状導体
40b コーティング膜
41 第1柱部
41a 第1端部
42 第2柱部
42a 第2端部
43 鍔部
50 接続基板
61〜65 外部接続端子
71a〜71c、72a〜72d、73a〜73d、74 導電性材料
74 導電性材料
101、102 半導体装置
300 出発基板
301、302 銅箔
303 化学銅めっき膜
304 電解銅めっき膜
401 銅板
1001 金型ポンチ
1002 金型ダイ
E エミッタポスト
F FWDポスト
G ゲートポスト
S センサポスト
Claims (11)
- 円柱の孔が形成されるとともに、該孔の壁面に導体が形成された支持板と、
電力用半導体素子と、
一端に第1端部を有し他端に第2端部を有する柱状導体からなる導体ポストと、
を備え、
前記第1端部の端面形状と前記孔の開口形状とが非相似の関係にあり、
前記導体ポストの側面と前記孔壁面の前記導体との固着面には、略同一面積の2以上の面が含まれ、これらの面は、略対称に配置され、
前記導体ポストの前記第2端部は、前記電力用半導体素子に接続され、
前記導体ポストの前記側面は、前記第2端部よりも前記第1端部側において、前記導体ポストの押圧により変形した前記孔壁面の前記導体に部分的に固着している、
ことを特徴とする半導体装置。 - 前記導体ポストと前記孔壁面の前記導体との接触面積は、前記導体ポストの軸方向に直交する横断面の面積の少なくとも50%以上である、
ことを特徴とする請求項1に記載の半導体装置。 - 前記支持板の少なくとも一方の主面に、導体層が形成され、
前記導体ポストの前記側面は、前記主面の前記導体層に接触している、
ことを特徴とする請求項1又は2に記載の半導体装置。 - 前記導体ポストの前記側面と前記導体層との接触面積は、前記導体ポストの軸方向に直交する横断面の面積の少なくとも15%以上である、
ことを特徴とする請求項3に記載の半導体装置。 - 前記第1端部の端面形状は、楕円、長方形、正多角形、正多角星、十字、コスモス形、又はこれらの2以上を結合した形状である、
ことを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。 - 前記導体ポストの主成分は、銅、銀、金、又はアルミニウムである、
ことを特徴とする請求項1乃至5のいずれか一項に記載の半導体装置。 - 前記導体ポストは、
銅、銀、金、又はアルミニウムを主成分とする柱状導体と、
前記柱状導体の表面に形成された、クロム、ニッケル、パラジウム、チタン、又は白金からなるコーティング膜と、
を有する、
ことを特徴とする請求項1乃至6のいずれか一項に記載の半導体装置。 - 前記コーティング膜の厚さは、0.5μm〜10μmである、
ことを特徴とする請求項7に記載の半導体装置。 - 前記半導体装置は、少なくとも前記支持板側主面に導体層を有する放熱板をさらに備え、
前記電力用半導体素子の少なくとも1つの電極が、前記放熱板の前記導体層に固定される、
ことを特徴とする請求項1乃至8のいずれか一項に記載の半導体装置。 - 支持板に円柱の孔を形成することと、
前記孔の壁面に導体を形成することと、
端面形状が前記孔の開口形状と非相似の関係にある導体ポストの第1端部を前記孔に嵌入し、前記第1端部と前記孔壁面の前記導体とを部分的に固着することと、
前記導体ポストの、前記第1端部とは反対側の第2端部を、電力用半導体素子に接続することと、
を含み、
前記導体ポストの側面と前記孔壁面の前記導体との固着面には、略同一面積の2以上の面が含まれ、これらの面は、略対称に配置される、
ことを特徴とする半導体装置の製造方法。 - 前記嵌入前における前記第1端部の幅は、前記孔の対応する部分の幅に比して、前記孔壁面の前記導体の厚みの5%〜75%の寸法だけ大きい、
ことを特徴とする請求項10に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009266869A JP5551920B2 (ja) | 2009-11-24 | 2009-11-24 | 半導体装置及びその製造方法 |
US12/952,655 US8415791B2 (en) | 2009-11-24 | 2010-11-23 | Semiconductor device and fabrication method therefor |
EP10192380.3A EP2339625B1 (en) | 2009-11-24 | 2010-11-24 | Semiconductor device and fabrication method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009266869A JP5551920B2 (ja) | 2009-11-24 | 2009-11-24 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011114039A JP2011114039A (ja) | 2011-06-09 |
JP5551920B2 true JP5551920B2 (ja) | 2014-07-16 |
Family
ID=44009731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009266869A Expired - Fee Related JP5551920B2 (ja) | 2009-11-24 | 2009-11-24 | 半導体装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8415791B2 (ja) |
EP (1) | EP2339625B1 (ja) |
JP (1) | JP5551920B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9107296B2 (en) * | 2011-06-01 | 2015-08-11 | Telefonaktiebolaget L M Ericsson (Publ) | Thermo/electrical conductor arrangement for multilayer printed circuit boards |
DE102011080929B4 (de) * | 2011-08-12 | 2014-07-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Leistungshalbleitermoduls |
JP5870669B2 (ja) * | 2011-12-14 | 2016-03-01 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
CN104011852B (zh) * | 2011-12-20 | 2016-12-21 | 株式会社东芝 | 陶瓷铜电路基板和使用了陶瓷铜电路基板的半导体装置 |
EP2871673A1 (en) | 2013-11-06 | 2015-05-13 | Nxp B.V. | Semiconductor device |
EP2871672B1 (en) | 2013-11-06 | 2018-09-26 | Nxp B.V. | Semiconductor device |
CN105612613B (zh) * | 2014-04-01 | 2018-11-06 | 富士电机株式会社 | 半导体装置 |
US10880409B2 (en) * | 2017-02-20 | 2020-12-29 | Cisco Technology, Inc. | Mixed qualitative, quantitative sensing data compression over a network transport |
US10573573B2 (en) * | 2018-03-20 | 2020-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package and package-on-package structure having elliptical conductive columns |
JP7468149B2 (ja) | 2020-05-27 | 2024-04-16 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3484935A (en) * | 1965-07-28 | 1969-12-23 | Western Electric Co | Method of producing electrical circuit assemblies having through connectors |
US3484937A (en) * | 1967-08-29 | 1969-12-23 | Gen Electric | Methods and apparatus for fixing interface pins in electrical circuit boards |
EP0055811B1 (en) * | 1981-01-07 | 1988-01-27 | International Business Machines Corporation | Pinned substrate and method for pinning a substrate |
US4877176A (en) * | 1987-11-25 | 1989-10-31 | Northern Telecom Limited | Soldering pins into printed circuit boards |
US5083928A (en) * | 1991-04-25 | 1992-01-28 | E. I. Du Pont De Nemours And Company | Electrical pin tips |
US5368220A (en) * | 1992-08-04 | 1994-11-29 | Morgan Crucible Company Plc | Sealed conductive active alloy feedthroughs |
US5497546A (en) * | 1992-09-21 | 1996-03-12 | Matsushita Electric Works, Ltd. | Method for mounting lead terminals to circuit board |
JP3294738B2 (ja) * | 1995-05-15 | 2002-06-24 | 新光電気工業株式会社 | リードピンの取付構造 |
JPH1098148A (ja) * | 1996-09-24 | 1998-04-14 | Matsushita Electric Works Ltd | 半導体パッケージ用端子ピン |
JP3088101B1 (ja) * | 1999-03-10 | 2000-09-18 | 日本特殊陶業株式会社 | ピン立設基板及びその製造方法 |
JP3680760B2 (ja) * | 2001-04-25 | 2005-08-10 | 日本電気株式会社 | 半導体装置の端子変換用アダプタ装置及びそれを用いた半導体装置並びにその実装方法 |
US6747217B1 (en) * | 2001-11-20 | 2004-06-08 | Unisys Corporation | Alternative to through-hole-plating in a printed circuit board |
JP4308716B2 (ja) * | 2004-06-09 | 2009-08-05 | 新光電気工業株式会社 | 半導体パッケージの製造方法 |
US20050285253A1 (en) * | 2004-06-24 | 2005-12-29 | Kumamoto Takashi | Forming buried via hole substrates |
JP4613077B2 (ja) * | 2005-02-28 | 2011-01-12 | 株式会社オクテック | 半導体装置、電極用部材および電極用部材の製造方法 |
JP2009064908A (ja) * | 2007-09-05 | 2009-03-26 | Ibiden Co Ltd | 配線基板およびその製造方法 |
JP5245485B2 (ja) * | 2008-03-25 | 2013-07-24 | 富士電機株式会社 | 半導体装置の製造方法 |
US8378231B2 (en) * | 2008-07-31 | 2013-02-19 | Ibiden Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5500936B2 (ja) * | 2009-10-06 | 2014-05-21 | イビデン株式会社 | 回路基板及び半導体モジュール |
-
2009
- 2009-11-24 JP JP2009266869A patent/JP5551920B2/ja not_active Expired - Fee Related
-
2010
- 2010-11-23 US US12/952,655 patent/US8415791B2/en active Active
- 2010-11-24 EP EP10192380.3A patent/EP2339625B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2339625A2 (en) | 2011-06-29 |
US8415791B2 (en) | 2013-04-09 |
EP2339625A3 (en) | 2013-04-03 |
US20110121450A1 (en) | 2011-05-26 |
EP2339625B1 (en) | 2015-01-07 |
JP2011114039A (ja) | 2011-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5551920B2 (ja) | 半導体装置及びその製造方法 | |
JP5581043B2 (ja) | 半導体装置及びその製造方法 | |
JP6602480B2 (ja) | 半導体装置 | |
US11171078B2 (en) | Semiconductor device and method for manufacturing the same | |
JP2008141027A (ja) | 熱電変換素子の接合構造及び熱電変換モジュール | |
JPWO2017187998A1 (ja) | 半導体装置 | |
JP2017123360A (ja) | 半導体モジュール | |
US20170223816A1 (en) | Flexible printed wiring board, electronic device having flexible printed wiring board, and method for manufacturing electronic device having flexible printed wiring board | |
JP4407509B2 (ja) | 絶縁伝熱構造体及びパワーモジュール用基板 | |
JP2018125515A (ja) | 電子装置 | |
JP2007227452A (ja) | フレキシブル配線基板及びそのはんだ接合方法並びにこれを用いた光送信パッケージ | |
JP7476540B2 (ja) | 半導体装置 | |
JP2005353726A (ja) | 半導体パッケージの製造方法 | |
JP2007042738A (ja) | 半導体装置 | |
JP2011091116A (ja) | 電子部品搭載用基板の製造方法及び電子部品搭載用基板 | |
JPH1056243A (ja) | 回路基板 | |
TW432220B (en) | Testing method with built-in automatic detection for digital and analog mixing mode circuit | |
JP2017063094A (ja) | 電子部品搭載用モジュール、及び、電子部品搭載用モジュールの製造方法 | |
JP2006186094A (ja) | 高信頼性プラスチック基板とその製造方法 | |
US20170323801A1 (en) | Method of generating a power semiconductor module | |
JPH11274347A (ja) | 半導体パッケージ、及びその形成方法 | |
TWM432220U (en) | Alumina ceramic circuit board with metal post and LED package structure | |
JP2012129338A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2010161265A (ja) | 電子装置 | |
JP2005183838A (ja) | 熱電モジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121019 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130613 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130806 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140513 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140523 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5551920 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |