JP5551515B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP5551515B2 JP5551515B2 JP2010118223A JP2010118223A JP5551515B2 JP 5551515 B2 JP5551515 B2 JP 5551515B2 JP 2010118223 A JP2010118223 A JP 2010118223A JP 2010118223 A JP2010118223 A JP 2010118223A JP 5551515 B2 JP5551515 B2 JP 5551515B2
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- 239000007788 liquid Substances 0.000 claims description 239
- 239000000758 substrate Substances 0.000 description 250
- 239000007789 gas Substances 0.000 description 50
- 230000005855 radiation Effects 0.000 description 44
- 238000000059 patterning Methods 0.000 description 29
- 238000007654 immersion Methods 0.000 description 22
- 230000005499 meniscus Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000002706 hydrostatic effect Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 206010000496 acne Diseases 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
[0032] 放射ビームB(例えば、UV放射またはDUV放射)を調整するように構成される照明システム(照明器)ILと、
[0033] パターニングデバイス(例えば、マスク)MAを支持するような構造にされ、特定のパラメータに従ってこのパターニングデバイスを正確に位置決めするように構成される第1の位置決め装置PMに連結される支持構造体(例えば、マスクテーブル)MTと、
[0034] 基板(例えば、レジストコートウェーハ)Wを保持するような構造にされ、特定のパラメータに従って基板を正確に位置決めするように構成される第2の位置決め装置PWに連結される基板テーブル(例えば、ウェーハテーブル)WTと、
[0035] 放射ビームBに付与されるパターンをパターニングデバイスMAによって基板Wの(例えば、1つまたは複数のダイを備える)ターゲット部分C上に投影するように構成される投影システム(例えば、屈折投影レンズシステム)PSとを備える。
Claims (12)
- テーブルと、
前記テーブル上の物体と投影システムとの間の空間に液体を供給する液体供給システムと、
使用時、前記物体の縁部と前記テーブルとの間の隙間を介して漏れる液体を収容する、前記テーブル内の排液管と、
前記排液管から液体を除去する、前記排液管内の液体除去デバイスとを備え、
前記液体除去デバイスが前記排液管内に負圧を作り出さず、
前記排液管の表面に対する前記液体の接触角が位置に応じて異なる、
リソグラフィ装置。 - 前記液体除去デバイスが受動的液体除去デバイスである、請求項1に記載の装置。
- 前記受動的液体除去デバイスが毛細管チャンネルを備える、請求項2に記載の装置。
- 前記液体除去デバイスが単相抽出器を備える、請求項1ないし3のいずれか一項に記載の装置。
- 前記単相抽出器が前記排液管とチャンバとの間に少なくとも1つの、好ましくは複数のスルーホールおよび/またはスリットを備え、使用時前記チャンバが、実質的に液体で一杯に満たされかつ負圧に接続される、請求項4に記載の装置。
- 前記排液管が、前記隙間を介して前記テーブルの頂部表面に対して開いているチャンバを備え、使用時に前記隙間が前記物体の周辺周りを延びる、請求項1ないし5のいずれか一項に記載の装置。
- 一直線の垂直通路が、前記テーブルの外側から前記隙間を貫通し前記排液管内に通る、請求項1ないし6のいずれか一項に記載の装置。
- 使用時、液体が前記隙間を通り前記排液管に入り、互いに向かい合った前記隙間の面の表面および/または前記隙間に最も近い前記排液管の上側表面と、前記液体が90°より大きな接触角を有する、請求項1ないし7のいずれか一項に記載の装置。
- 前記面が前記隙間の最狭部分を画成する、請求項8に記載の装置。
- 前記面が、前記隙間が中間部で狭くなるように凸である、請求項8または9に記載の装置。
- 前記面のうちの1つが前記物体の表面である、請求項8ないし10のいずれか一項に記載の装置。
- 使用時、前記隙間を通り前記排液管内に入るガス流れが実質的に全く存在しない、請求項1ないし11のいずれか一項に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/390,427 US8027019B2 (en) | 2006-03-28 | 2006-03-28 | Lithographic apparatus and device manufacturing method |
US11/390,427 | 2006-03-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007072118A Division JP4550848B2 (ja) | 2006-03-28 | 2007-03-20 | リソグラフィ装置およびデバイス製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011129964A Division JP5303607B2 (ja) | 2006-03-28 | 2011-06-10 | リソグラフィ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010212728A JP2010212728A (ja) | 2010-09-24 |
JP5551515B2 true JP5551515B2 (ja) | 2014-07-16 |
Family
ID=38558375
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007072118A Active JP4550848B2 (ja) | 2006-03-28 | 2007-03-20 | リソグラフィ装置およびデバイス製造方法 |
JP2010118223A Active JP5551515B2 (ja) | 2006-03-28 | 2010-05-24 | リソグラフィ装置 |
JP2011129964A Active JP5303607B2 (ja) | 2006-03-28 | 2011-06-10 | リソグラフィ装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007072118A Active JP4550848B2 (ja) | 2006-03-28 | 2007-03-20 | リソグラフィ装置およびデバイス製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011129964A Active JP5303607B2 (ja) | 2006-03-28 | 2011-06-10 | リソグラフィ装置 |
Country Status (5)
Country | Link |
---|---|
US (5) | US8027019B2 (ja) |
JP (3) | JP4550848B2 (ja) |
KR (3) | KR100881963B1 (ja) |
CN (2) | CN101046640B (ja) |
TW (4) | TWI356975B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5029611B2 (ja) * | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
US8416383B2 (en) * | 2006-12-13 | 2013-04-09 | Asml Netherlands B.V. | Lithographic apparatus and method |
US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
NL1035942A1 (nl) * | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
US20090218743A1 (en) * | 2008-02-29 | 2009-09-03 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall |
EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
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JP4449591B2 (ja) * | 2004-06-17 | 2010-04-14 | 株式会社デンソー | 車両用発電システム |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1806772B1 (en) * | 2004-10-15 | 2014-08-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
CN100533662C (zh) * | 2004-11-01 | 2009-08-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
TWI424260B (zh) | 2005-03-18 | 2014-01-21 | 尼康股份有限公司 | A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method |
US7839483B2 (en) * | 2005-12-28 | 2010-11-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a control system |
JP2007235112A (ja) | 2006-02-02 | 2007-09-13 | Canon Inc | 露光装置及びデバイス製造方法 |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL2004363A (en) | 2009-04-22 | 2010-10-26 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
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Also Published As
Publication number | Publication date |
---|---|
JP4550848B2 (ja) | 2010-09-22 |
TWI460551B (zh) | 2014-11-11 |
KR20070097362A (ko) | 2007-10-04 |
US10866501B2 (en) | 2020-12-15 |
TWI448837B (zh) | 2014-08-11 |
JP2007266603A (ja) | 2007-10-11 |
US20210173294A1 (en) | 2021-06-10 |
JP2011205128A (ja) | 2011-10-13 |
CN101046640B (zh) | 2012-03-28 |
JP5303607B2 (ja) | 2013-10-02 |
US11537038B2 (en) | 2022-12-27 |
JP2010212728A (ja) | 2010-09-24 |
CN102566319B (zh) | 2015-06-10 |
US20230127070A1 (en) | 2023-04-27 |
TWI356975B (en) | 2012-01-21 |
TW201220003A (en) | 2012-05-16 |
US9235113B2 (en) | 2016-01-12 |
TW200741372A (en) | 2007-11-01 |
US20110273678A1 (en) | 2011-11-10 |
KR20110084853A (ko) | 2011-07-26 |
KR20080083240A (ko) | 2008-09-17 |
TW201512789A (zh) | 2015-04-01 |
KR100881963B1 (ko) | 2009-02-04 |
US20070229786A1 (en) | 2007-10-04 |
US20110242512A1 (en) | 2011-10-06 |
KR101217603B1 (ko) | 2013-01-18 |
CN101046640A (zh) | 2007-10-03 |
US8027019B2 (en) | 2011-09-27 |
TWI559094B (zh) | 2016-11-21 |
CN102566319A (zh) | 2012-07-11 |
TW201207577A (en) | 2012-02-16 |
KR101217616B1 (ko) | 2013-01-21 |
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