JP5545265B2 - GaAs単結晶ウエハ及びGaAs単結晶の製造方法 - Google Patents
GaAs単結晶ウエハ及びGaAs単結晶の製造方法 Download PDFInfo
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- JP5545265B2 JP5545265B2 JP2011108237A JP2011108237A JP5545265B2 JP 5545265 B2 JP5545265 B2 JP 5545265B2 JP 2011108237 A JP2011108237 A JP 2011108237A JP 2011108237 A JP2011108237 A JP 2011108237A JP 5545265 B2 JP5545265 B2 JP 5545265B2
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- wafer
- single crystal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記単結晶製造中の前記固相と液相との固液界面における前記固相の形状を前記液相側に凸状とし、該凸状となっている凸度{前記融液と液体封止剤の界面から前記凸の先端部までの長さT1と前記単結晶外径T2との比(T1/T2)}を0.25以上、前記固液界面の前記相対的な移動方向における結晶成長速度V1を4mm/hr〜7mm/hr、及び、前記固相の冷却速度V2を5℃/hr以下とすることを特徴とする。
〔式1〕
式(1)から明らかなように、位相差δと主振動方位角φを測定すれば、ウエハの残留歪みである|Sr−St|を算出することができる。
Claims (4)
- 円形状の平面の中心点から外縁まで半径にて3等分したときの中心点から2/3より外側にある外周部と、前記外周部の内側にある中心部とを有するGaAs単結晶ウエハの半径方向歪をSr及び円周面の接線方向歪をStとするとき、前記ウエハ平面内の残留応力の絶対値|Sr−St|が、前記平面の中心部で1.0×10−5未満であり、前記平面の外周部で1.0×10−5以上である領域及び前記外周部の[011]方向で1.0×10−5未満である領域を有することを特徴とするGaAs単結晶ウエハ。
- 請求項1において、前記ウエハ面内の転位密度が、30000個/cm2以下であることを特徴とするGaAs単結晶ウエハ。
- 請求項1又は2において、前記ウエハは、その外径が100mm以上であることを特徴とするGaAs単結晶ウエハ。
- サセプターに載置されたルツボを容器内に収納し、前記ルツボ内に加熱によって溶融したGaAs融液と液体封止剤とを有し、種結晶を前記GaAs融液からなる液相に接触させながら前記種結晶とルツボとの相対的な移動によってGaAs固相からなるGaAs単結晶を製造させるGaAs単結晶ウエハの製造方法において、
前記単結晶製造中の前記固相と液相との固液界面における前記固相の形状を前記液相側に凸状とし、該凸状となっている凸度{前記融液と液体封止剤の界面から前記凸の先端部までの長さT1と前記単結晶外径T2との比(T1/T2)}を0.25以上、前記固液界面の前記相対的な移動方向における結晶成長速度V1を4mm/hr〜7mm/hr、及び、前記固相の冷却速度V2を5℃/hr以下とすることを特徴とするGaAs単結晶の製造方法。
Priority Applications (2)
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---|---|---|---|
JP2011108237A JP5545265B2 (ja) | 2011-05-13 | 2011-05-13 | GaAs単結晶ウエハ及びGaAs単結晶の製造方法 |
US13/461,025 US20120288403A1 (en) | 2011-05-13 | 2012-05-01 | GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME |
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JP2011108237A JP5545265B2 (ja) | 2011-05-13 | 2011-05-13 | GaAs単結晶ウエハ及びGaAs単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012236750A JP2012236750A (ja) | 2012-12-06 |
JP5545265B2 true JP5545265B2 (ja) | 2014-07-09 |
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JP2011108237A Expired - Fee Related JP5545265B2 (ja) | 2011-05-13 | 2011-05-13 | GaAs単結晶ウエハ及びGaAs単結晶の製造方法 |
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US (1) | US20120288403A1 (ja) |
JP (1) | JP5545265B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105993289A (zh) * | 2016-05-18 | 2016-10-12 | 沈阳人和机电工程设备有限公司 | 一种提高种子萌发和生长速度的处理方法 |
CN111902573B (zh) * | 2018-08-07 | 2024-03-08 | 住友电气工业株式会社 | 砷化镓单晶和砷化镓单晶基板 |
CN110033831B (zh) * | 2019-04-10 | 2021-09-07 | 西北工业大学 | 高温合金的力学性能预测方法及装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03261694A (ja) * | 1990-03-09 | 1991-11-21 | Sumitomo Electric Ind Ltd | 単結晶の引上方法および引上装置 |
JP3156382B2 (ja) * | 1992-04-10 | 2001-04-16 | 住友電気工業株式会社 | 化合物半導体単結晶およびその成長方法 |
DE69619005T2 (de) * | 1995-03-16 | 2002-07-11 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zur Züchtung eines Einkristalles |
JP2004010467A (ja) * | 2002-06-12 | 2004-01-15 | Hitachi Cable Ltd | 化合物半導体単結晶の成長方法 |
JP2004123444A (ja) * | 2002-10-02 | 2004-04-22 | Hitachi Cable Ltd | 化合物半導体単結晶製造装置 |
JP2004238225A (ja) * | 2003-02-04 | 2004-08-26 | Hitachi Cable Ltd | 半導体結晶製造装置 |
JP4715528B2 (ja) * | 2005-01-31 | 2011-07-06 | 日立電線株式会社 | 電子デバイス用半絶縁性GaAsウェハ及びその製造方法 |
JP2006327879A (ja) * | 2005-05-26 | 2006-12-07 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
JP2008174415A (ja) * | 2007-01-18 | 2008-07-31 | Hitachi Cable Ltd | 半絶縁性GaAsウエハ及びその製造方法 |
JP2008222481A (ja) * | 2007-03-12 | 2008-09-25 | Hitachi Cable Ltd | 化合物半導体の製造方法及び装置 |
JP2009057237A (ja) * | 2007-08-31 | 2009-03-19 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
JP2009161395A (ja) * | 2008-01-07 | 2009-07-23 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
JP5553009B2 (ja) * | 2010-11-18 | 2014-07-16 | 日立金属株式会社 | GaAsウェハ及びGaAsウェハの製造方法 |
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2011
- 2011-05-13 JP JP2011108237A patent/JP5545265B2/ja not_active Expired - Fee Related
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2012
- 2012-05-01 US US13/461,025 patent/US20120288403A1/en not_active Abandoned
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JP2012236750A (ja) | 2012-12-06 |
US20120288403A1 (en) | 2012-11-15 |
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