JP5543819B2 - 抵抗変化素子、メモリセルアレイ、及び抵抗変化装置 - Google Patents
抵抗変化素子、メモリセルアレイ、及び抵抗変化装置 Download PDFInfo
- Publication number
- JP5543819B2 JP5543819B2 JP2010073697A JP2010073697A JP5543819B2 JP 5543819 B2 JP5543819 B2 JP 5543819B2 JP 2010073697 A JP2010073697 A JP 2010073697A JP 2010073697 A JP2010073697 A JP 2010073697A JP 5543819 B2 JP5543819 B2 JP 5543819B2
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- Prior art keywords
- electrode
- layer
- oxide layer
- filament
- resistance change
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- 230000008859 change Effects 0.000 title claims description 43
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 16
- 230000004913 activation Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Description
、Hf、Ta、及びZrから選択される少なくとも一つの金属を含む第1の電極と、前記
第1の電極と対向する第2の電極と、前記第1の電極と前記第2の電極との間に設けられ
た酸化物層と、を備え、前記酸化物層がアモルファスであり、SiとOからなり、前記O
の濃度が前記第1の電極から前記第2の電極に向かって増加し、かつ前記酸化物層の積層
方向に対して前記Oの濃度勾配が極大値を有する領域が少なくとも1つ有することを特徴
とする。
(第1の実施形態)
Claims (6)
- Ag、Ti、Ni、Co、Al、Cr、Cu、W、Hf、Ta、及びZrから選択され
る少なくとも一つの金属を含む第1の電極と、
前記第1の電極に対向する第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた酸化物層と、
を備え、
前記酸化物層がアモルファスであり、SiとOからなり、前記Oの濃度が前記第1の電
極から前記第2の電極に向かって増加し、かつ前記酸化物層の積層方向に対して前記Oの
濃度勾配が極大値を有する領域が少なくとも1つ存在することを特徴とする抵抗変化素子
。 - 前記第1の電極と前記第2の電極との間に複数の閾値電圧をかけることで多値記録をす
ることを特徴とする請求項1に記載の抵抗変化素子。 - 前記第2の電極は、不純物がドープされたSiであることを特徴とする請求項1に記載
の抵抗変化素子。 - 列方向に複数設けられた第1の配線と、
行方向に複数設けられた第2の配線と、
前記第1の配線と前記第2の配線が交わる位置であって前記第1の配線と前記第2の配
線との間に設けられた、請求項1乃至請求項3の何れか1項に記載の抵抗変化素子と、
前記抵抗変化素子と前記第2の配線と
の間に設けられた整流素子と、
を備えることを特徴とするメモリセルアレイ。 - 基板と、
金属を含む第1の電極と第1の絶縁膜とが交互に前記基板上に積層された第1の積層体
と、
第2の電極と第2の絶縁膜とが交互に前記基板上に前記第1の積層体と離間して積層さ
れ、前記第2の電極は前記第1の電極と対向し、前記第2の絶縁膜は前記第1の絶縁膜と
対向する第2の積層体と、
前記基板上であって前記第1の積層体と前記第2の積層体との間に設けられた酸化物層
と、
を備え、
前記金属が、Ag、Ti、Ni、Co、Al、Cr、Cu、W、Hf、Ta、及び、Z
rから選択される少なくとも一つの金属であり、前記第2の電極が不純物がドープされた
Siであり、前記酸化物層がアモルファスであり、SiとOからなり、前記O濃度が前記
第1の電極から前記第2の電極に向かって増加し、かつ前記酸化物層の積層方向に対して
前記Oの濃度勾配が極大値を有する領域が少なくとも1つ存在することを特徴とする抵抗
変化装置。 - 前記第1の電極と前記第2の電極との間に複数の閾値電圧をかけることで多値記録をす
ることを特徴とする請求項5に記載の抵抗変化装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073697A JP5543819B2 (ja) | 2010-03-26 | 2010-03-26 | 抵抗変化素子、メモリセルアレイ、及び抵抗変化装置 |
PCT/JP2011/056506 WO2011118513A1 (en) | 2010-03-26 | 2011-03-11 | Resistance change device and memory cell array |
CN201180011998.XA CN102782847B (zh) | 2010-03-26 | 2011-03-11 | 电阻变化器件以及存储器基元阵列 |
TW100108953A TWI613807B (zh) | 2010-03-26 | 2011-03-16 | 電阻改變裝置及記憶胞陣列 |
US13/598,305 US8916848B2 (en) | 2010-03-26 | 2012-08-29 | Resistance change device and memory cell array |
US14/550,018 US9219229B2 (en) | 2010-03-26 | 2014-11-21 | Resistance change device and memory cell array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073697A JP5543819B2 (ja) | 2010-03-26 | 2010-03-26 | 抵抗変化素子、メモリセルアレイ、及び抵抗変化装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011205045A JP2011205045A (ja) | 2011-10-13 |
JP5543819B2 true JP5543819B2 (ja) | 2014-07-09 |
Family
ID=44673068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010073697A Expired - Fee Related JP5543819B2 (ja) | 2010-03-26 | 2010-03-26 | 抵抗変化素子、メモリセルアレイ、及び抵抗変化装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8916848B2 (ja) |
JP (1) | JP5543819B2 (ja) |
CN (1) | CN102782847B (ja) |
TW (1) | TWI613807B (ja) |
WO (1) | WO2011118513A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10164180B2 (en) | 2016-11-21 | 2018-12-25 | Toshiba Memory Corporation | Variable resistance element and memory device |
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JP2013026459A (ja) | 2011-07-21 | 2013-02-04 | Toshiba Corp | 不揮発性抵抗変化素子 |
JP5634426B2 (ja) * | 2012-03-22 | 2014-12-03 | 株式会社東芝 | 記憶装置 |
JP5798052B2 (ja) * | 2012-01-31 | 2015-10-21 | 株式会社東芝 | 記憶装置 |
JP2013162086A (ja) * | 2012-02-08 | 2013-08-19 | Toshiba Corp | 不揮発性抵抗変化素子 |
US9685608B2 (en) * | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8916846B2 (en) | 2012-09-05 | 2014-12-23 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
JP5835697B2 (ja) | 2012-12-28 | 2015-12-24 | 株式会社東芝 | Ask変調増幅回路 |
JP6230090B2 (ja) * | 2013-01-28 | 2017-11-15 | 国立研究開発法人物質・材料研究機構 | 多機能電気伝導素子 |
US9153624B2 (en) * | 2013-03-14 | 2015-10-06 | Crossbar, Inc. | Scaling of filament based RRAM |
TWI543337B (zh) | 2013-03-19 | 2016-07-21 | 東芝股份有限公司 | 電阻式隨機存取記憶裝置 |
US9087770B2 (en) | 2013-03-20 | 2015-07-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP2015090881A (ja) * | 2013-11-05 | 2015-05-11 | 株式会社船井電機新応用技術研究所 | 記憶素子 |
KR101512728B1 (ko) * | 2014-09-12 | 2015-04-23 | 연세대학교 산학협력단 | 적층 구조를 갖는 저항 스위칭 메모리 및 그 제조 방법 |
JP6386349B2 (ja) * | 2014-11-19 | 2018-09-05 | 東芝メモリ株式会社 | 不揮発性記憶装置 |
WO2017111813A1 (en) * | 2015-12-26 | 2017-06-29 | Intel Corporation | High retention resistive random access memory |
WO2017171819A1 (en) * | 2016-03-31 | 2017-10-05 | Intel Corporation | Resistive random access memory with deuterium |
US11106966B2 (en) * | 2017-03-13 | 2021-08-31 | International Business Machines Corporation | Battery-based neural network weights |
US11342499B2 (en) | 2017-09-18 | 2022-05-24 | Intel Corporation | RRAM devices with reduced forming voltage |
WO2019066849A1 (en) * | 2017-09-28 | 2019-04-04 | Intel Corporation | RANDOM ACCESS RESISTIVE MEMORY DEVICE WITH MULTILAYER SWITCHING STACK AND METHODS OF MANUFACTURE |
CN108807668B (zh) * | 2018-06-25 | 2020-07-10 | 华中科技大学 | 基于金属氧化物氧浓度梯度的高性能忆阻器件及其制备 |
JP2020009937A (ja) * | 2018-07-10 | 2020-01-16 | キオクシア株式会社 | 記憶装置 |
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JP2013162086A (ja) * | 2012-02-08 | 2013-08-19 | Toshiba Corp | 不揮発性抵抗変化素子 |
JP2013187336A (ja) * | 2012-03-07 | 2013-09-19 | Toshiba Corp | 不揮発性半導体記憶装置 |
-
2010
- 2010-03-26 JP JP2010073697A patent/JP5543819B2/ja not_active Expired - Fee Related
-
2011
- 2011-03-11 WO PCT/JP2011/056506 patent/WO2011118513A1/en active Application Filing
- 2011-03-11 CN CN201180011998.XA patent/CN102782847B/zh not_active Expired - Fee Related
- 2011-03-16 TW TW100108953A patent/TWI613807B/zh not_active IP Right Cessation
-
2012
- 2012-08-29 US US13/598,305 patent/US8916848B2/en not_active Expired - Fee Related
-
2014
- 2014-11-21 US US14/550,018 patent/US9219229B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10164180B2 (en) | 2016-11-21 | 2018-12-25 | Toshiba Memory Corporation | Variable resistance element and memory device |
Also Published As
Publication number | Publication date |
---|---|
CN102782847B (zh) | 2015-09-09 |
US8916848B2 (en) | 2014-12-23 |
WO2011118513A1 (en) | 2011-09-29 |
US9219229B2 (en) | 2015-12-22 |
JP2011205045A (ja) | 2011-10-13 |
CN102782847A (zh) | 2012-11-14 |
US20150102279A1 (en) | 2015-04-16 |
TW201138089A (en) | 2011-11-01 |
TWI613807B (zh) | 2018-02-01 |
US20120319074A1 (en) | 2012-12-20 |
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