JP5543498B2 - 有機電気装置のための封入方法および誘電体層 - Google Patents
有機電気装置のための封入方法および誘電体層 Download PDFInfo
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- JP5543498B2 JP5543498B2 JP2011552915A JP2011552915A JP5543498B2 JP 5543498 B2 JP5543498 B2 JP 5543498B2 JP 2011552915 A JP2011552915 A JP 2011552915A JP 2011552915 A JP2011552915 A JP 2011552915A JP 5543498 B2 JP5543498 B2 JP 5543498B2
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
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Description
本発明は、the U.S. Department of Energyからの、助成金番号DE−FC26−06NT42936の助成金による、政府の援助によって一部なされた。したがって、政府は本発明に対して一定の権利を有し得る。
本発明は、有機電子装置用の封入層(encapsulation layer)および誘電体層に適した材料に関する。そのような方法によって作製した誘電体層および封入層を有する装置をさらに提供する。本発明は、たとえば電子工学の分野において有用性が見つかる。
有機電子装置は様々な応用において幅広く使用されている。それらは発光ダイオード、トランジスタ、および光起電力電池などの電気装置であり、有機材料を装置の構成要素のうちの1つまたは複数(たとえば、誘電体層、電極層など)として使用することが含まれる。有機発光ダイオード(OLED)などの有機電気発光装置(ELD)は近年商業的に重要となっている。有機材料はその軽量および低価格に関して望ましい。残念ながら、多くの有機材料では、金属材料と比較して低い安定性および低い耐久性に悩まされる。
(V) [R1SiO1.5]
[式中、R1は既に定義したとおりである]を有する反復単位を含む架橋結合した材料が形成される。結合材料が式(IV)の構造を有する反復単位を含んでいた場合は、架橋結合した材料もそのような単位を有することを理解されたい。
上述の一般手順を用いて作製した誘電体層の品質を、電気的破壊電位≧20Vを有する装置の歩留りによって評価した。
Claims (21)
- (i)セラミック材料である障壁材料を基材上に直接的または間接的に堆積させることによって障壁層を形成するステップと、
(ii)該障壁層を酸化させて露出した官能基をもたらすステップと、
(iii)ケイ素含有材料であり該障壁層の該官能基と反応することができる官能基を含む結合材料の層を、該障壁層上に堆積させることによって結合層を形成するステップと、
(iv)任意選択で該結合層を酸化させて露出した官能基をもたらすステップと、
(v)任意選択で(i)、(ii)、(iii)、および(iv)を繰り返すことによって、さらなる障壁層および結合層の1つまたは複数の対を形成するステップと
を含む、電子装置中の誘電体層を形成する方法であって、
前記ケイ素含有材料が、式(I)の構造:
R 1 およびR 2 は、H、OH、C 1 〜C 30 ヒドロカルビル、有機金属、ハロカルビル、および有機シリルから独立して選択され、そのそれぞれが任意選択で置換されていてもよく、任意選択でヘテロ原子を含有していてもよく、
Xは、−O−および−NR 3 −から選択され、
R 3 は、ヒドロカルビルであり、
nは、1以上の整数である]
を有する単量体単位を含むシロキサンまたはポリシロキサンである、
該方法。 - 前記障壁材料が、アルミニウム酸化物、ケイ素酸化物、チタン酸化物、タングステン酸化物、マグネシウム酸化物、ジルコニウム酸化物、またはカルシウム酸化物、ケイ素窒化物、タングステン窒化物、アルミニウム窒化物、ジルコニウム窒化物、クロム窒化物、チタン窒化物、タンタル窒化物、モリブデン窒化物、ガリウム窒化物、またはホウ素窒化物、ケイ素炭化物、チタン炭化物、バナジウム炭化物、ジルコニウム炭化物、鉄炭化物、またはホウ素炭化物、チタンホウ化物または鉄ホウ化物、ならびにタングステンケイ化物およびチタンケイ化物から選択されるセラミック材料である、請求項1に記載の方法。
- 1〜10層のさらなる障壁層および結合層が形成されるように(i)、(ii)、(iii)、および(iv)をさらに1〜10回繰り返す、請求項1に記載の方法。
- 硬化を高温で実施する、請求項1に記載の方法。
- 硬化をそれぞれの結合層の形成の後に実施する、請求項3に記載の方法。
- 硬化をすべての結合層が形成された後に実施する、請求項3に記載の方法。
- 前記電子装置が、OLED、有機薄膜トランジスタ、および有機光起電力装置から選択される、請求項1に記載の方法。
- それぞれの結合層が約1nm〜約100nmの範囲の厚さを有する、請求項3に記載の方法。
- それぞれの障壁層が約5nm〜約100nmの範囲の厚さを有する、請求項3に記載の方法。
- 前記誘電体層が6nm〜2000nmの全厚を有する、請求項1に記載の方法。
- 前記障壁層を下部電極上に堆積させる、請求項1に記載の方法。
- 前記下部電極が基材上に配置された導電性材料の層であるか、または前記下部電極が導電性基材である、請求項11に記載の方法。
- 基材上に配置された複数の構成要素層と、
セラミック材料である障壁材料およびケイ素含有ポリマーである架橋結合した材料の少なくとも第1の対の層を含む誘電体層と
を含む、電子装置であって、
前記ケイ素含有ポリマーが、構造−[Si(R 2 )(X) 1.5 ]−
[式中、R 2 は、H、ヒドロキシル、フルオロカルビル、およびヒドロカルビルから選択され、
Xは、−O−および−NR 3 −から選択され、
R 3 は、アルキルおよびアリールから選択される]
を有する架橋結合した単位を含む、
該電子装置。 - 前記誘電体層が、追加の1〜10対の、前記障壁材料および前記架橋結合した材料の交互する層をさらに含む、請求項13に記載の電子装置。
- 前記障壁材料が、アルミニウム酸化物、ケイ素酸化物、チタン酸化物、タングステン酸化物、マグネシウム酸化物、ジルコニウム酸化物、またはカルシウム酸化物、ケイ素窒化物、タングステン窒化物、アルミニウム窒化物、ジルコニウム窒化物、クロム窒化物、チタン窒化物、タンタル窒化物、モリブデン窒化物、ガリウム窒化物、またはホウ素窒化物、ケイ素炭化物、チタン炭化物、バナジウム炭化物、ジルコニウム炭化物、鉄炭化物、またはホウ素炭化物、チタンホウ化物または鉄ホウ化物、ならびにタングステンケイ化物およびチタンケイ化物から選択されるセラミック材料である、請求項13に記載の電子装置。
- Xが−O−であり、R2が、アルキル、アルケニル、アルキニル、アルコキシ、アリール、アリールオキシ、アラルキル、およびアルカリールから選択され、そのうちの任意のものがヘテロ原子を含有してもよく、そのうちの任意のものが、非置換であるかまたはハロ、ヒドロキシル、アルキル、およびアリールから選択される1つもしくは複数の基で置換されていてもよい、請求項13に記載の電子装置。
- 下部電極を含み、前記第1の対の層の前記障壁材料が該下部電極と直接接触している、請求項13に記載の電子装置。
- OLED、有機薄膜トランジスタ、および有機光起電力装置から選択される、請求項13に記載の電子装置。
- 前記第1の対の層の前記障壁材料が共有結合によって前記第1の対の層の前記結合材料と結合している、請求項13に記載の電子装置。
- それぞれの障壁層の障壁材料が任意の隣接する障壁層の結合材料と共有結合している、請求項14に記載の電子装置。
- 前記誘電体層が6nm〜2000nmの全厚を有する、請求項13に記載の電子装置。
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