JP5538291B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Description
2 基板
3 トレイ
3a 上面
3b 下面
3c ノッチ
4 基板収容孔
5 基板支持部
5a 基板支持面
11 プラズマ処理部
12 搬送部
13 ストック部
15 搬送装置
16 処理室
17 収容室
19 搬送室
20A,20B,20C 連通口
21A,21B ゲートバルブ
23 ステージ
23a 上端面
23b 基板保持部
24 昇降ロッド
28 支持フォーク
29 水平移動機構
30 旋回軸
31 搬送機構駆動部
33 回転ステージ
36 回転軸
37 回転ステージ駆動機構
38 ベース
39A,39B アーム
40 突起
40a 規制面
41 突起
41a 規制面
42 窓
43A,43B 基板検出センサー
44 ノッチ検出センサー
45A,45B,45C 光反射部材
46 制御部
47 操作・入力部
48 真空ポンプ
49 表示部
51 トレイ搬送処理部
52 リフター昇降処理部
53 アラインメント処理部
54 基板有無確認処理部
61 リフター
62 カセット
63 昇降台
63a 上面
63b 下面
63c 切欠
64 リフター駆動機構
65 底板
66 天板
66a ハンドル
67A,67B 主棚板部材
67a 内面
67b 主棚部
67c 仮置き棚部
68A,68B 副棚板部材
68a 内面
68b 主棚部
68c 仮置き棚部
71 出入口
72 扉
73A,73B,73C 規制部
74A,74B ロック機構
75 軸受部
76 ロッド
77 ばね
78 可動規制部材
79 ノブ
81 位置ずれセンサー
82 基板位置ずれ確認処理部
83 移載部
84 移載室
85 移載ロボット
Claims (16)
- プラズマ処理の対象物を収納するストック部と、
前記ストック部から搬入される前記対象物に対してプラズマ処理を実行するプラズマ処理部と、
前記対象物を搬送する搬送装置を収容した搬送部と、
前記ストック部から前記プラズマ処理部に搬入される前の前記対象物が配置される、前記搬送部に収容された準備ステージと、
前記準備ステージと協働して前記対象物に対して前記プラズマ処理のための予備的処理を実行するための予備処理部と
を備え、
前記対象物は基板が収容された搬送可能なトレイであり、
前記予備処理部は、前記準備ステージに載置された前記トレイにおける前記基板の有無を光学的に検出する基板検出センサーを備え、前記基板検出センサーからの出力に基づいて基板の有無を判定する、プラズマ処理装置。 - プラズマ処理の対象物を収納するストック部と、
前記ストック部から搬入される前記対象物に対してプラズマ処理を実行するプラズマ処理部と、
前記対象物を搬送する搬送装置を収容した搬送部と、
前記ストック部から前記プラズマ処理部に搬入される前の前記対象物が配置される、前記搬送部に収容された準備ステージと、
前記準備ステージと協働して前記対象物に対して前記プラズマ処理のための予備的処理を実行するための予備処理部と
を備え、
前記対象物は基板が収容された搬送可能なトレイであり、
前記予備処理部は、前記準備ステージに載置された前記トレイに対する前記基板の位置ずれを光学的に検出する位置ずれ検出センサーを備え、前記基板検出センサーからの出力に基づいて前記トレイに対する前記基板の位置ずれの有無を判定する、プラズマ処理装置。 - 前記準備ステージは前記搬送部の前記ストック部側に配置されている、請求項1又は請求項2に記載のプラズマ処理装置。
- 前記搬送装置は前記対象物を支持する支持部と、前記支持部を水平面内で旋回させる旋回軸とを備え、
前記準備ステージは前記旋回軸とストック部との間に配置されている、請求項3に記載のプラズマ処理装置。 - 前記搬送部内と前記ストック部内とは連通口を介して連通し、
前記準備ステージは前記旋回軸と前記ストック部の中心とを結ぶ仮想の線上であって前記旋回軸と前記連通口との間に配置されている、請求項4に記載のプラズマ処理装置。 - 前記準備ステージは鉛直方向に沿って延びる回転軸周りに回転可能であり、
前記予備処理部は前記準備ステージを前記回転軸周りに回転させることで、前記準備ステージに載置された前記対象物の回転角度位置を調整する、請求項1から請求項5のいずれか1項に記載のプラズマ処理装置。 - 前記対象物は外周縁にノッチを備え、
前記予備処理部は、前記準備ステージに載置された前記対象物の前記ノッチを光学的に検出するノッチ検出センサーを備え、前記ノッチ検出センサーからの出力に応じて前記準備ステージを回転させることで前記対象物の回転角度位置を調整する、請求項6に記載のプラズマ処理装置。 - 前記準備ステージは鉛直方向に沿って昇降する、請求項1から請求項7のいずれか1項に記載のプラズマ処理装置。
- 搬送部に収容された搬送装置によって、ストック部に収納されたプラズマ処理の対象物を前記搬送部に収容された準備ステージへ搬送し、
前記準備ステージ上に配置された前記対象物に対して前記プラズマ処理のための予備的処理を実行し、
前記予備的処理の終了後の前記対象物を前記搬送装置によりプラズマ処理部に搬送してプラズマ処理を実行し、
前記プラズマ処理後の前記対象物を前記プラズマ処理部から前記ストック部へ搬送し、
前記対象物は基板が収容された搬送可能なトレイであり、
前記予備的処理は、前記準備ステージに載置された前記トレイにおける前記基板の有無を光学的に検出する基板検出センサーからの出力に基づく基板の有無の判定である、プラズマ処理方法。 - 搬送部に収容された搬送装置によって、ストック部に収納されたプラズマ処理の対象物を前記搬送部に収容された準備ステージへ搬送し、
前記準備ステージ上に配置された前記対象物に対して前記プラズマ処理のための予備的処理を実行し、
前記予備的処理の終了後の前記対象物を前記搬送装置によりプラズマ処理部に搬送してプラズマ処理を実行し、
前記プラズマ処理後の前記対象物を前記プラズマ処理部から前記ストック部へ搬送し、
前記対象物は基板が収容された搬送可能なトレイであり、
前記予備的処理は、前記準備ステージに載置された前記トレイに対する前記基板の位置ずれを光学的に検出する位置ずれ検出センサーからの出力に基づく前記基板の位置ずれの有無の判定である、プラズマ処理方法。 - 前記準備ステージは前記収容部の前記ストック部側に配置されている、請求項9又は請求項10に記載のプラズマ処理方法。
- 前記搬送装置は前記対象物を支持する支持部と、前記支持部を水平面内で旋回させる旋回軸とを備え、
前記準備ステージは前記旋回軸とストック部との間に配置されている、請求項11に記載のプラズマ処理方法。 - 前記収容部内と前記ストック部内とは連通口を介して連通し、
前記準備ステージは前記旋回軸と前記ストック部の中心とを結ぶ仮想の線上であって前記旋回軸と前記連通口との間に配置され、
前記予備的処理を実行する際に、前記準備ステージ上に配置された前記対象物の一部が前記連通口内に進入している、請求項12に記載のプラズマ処理方法。 - 前記予備的処理は、前記準備ステージを鉛直軸方向に沿って延びる回転軸周りに回転させて前記準備ステージに載置された前記対象物の回転角度位置を調整するものである、請求項9から請求項13のいずれか1項に記載のプラズマ処理方法。
- 前記対象物は外周縁にノッチを備え、
前記予備的処理は、前記準備ステージ上に載置された前記対象物の前記ノッチを光学的に検出するノッチ検出センサからの出力に応じて前記準備ステージを回転させるものである、請求項14に記載のプラズマ処理方法。 - 前記準備ステージの昇降により前記搬送装置と前記準備ステージとの間で前記対象物の移載が実行される、請求項9から請求項15のいずれか1項に記載のプラズマ処理方法。
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JP2011089262A JP5538291B2 (ja) | 2011-04-13 | 2011-04-13 | プラズマ処理装置及びプラズマ処理方法 |
PCT/JP2012/002078 WO2012140837A1 (ja) | 2011-04-13 | 2012-03-26 | プラズマ処理装置及びプラズマ処理方法 |
US13/823,945 US8945411B2 (en) | 2011-04-13 | 2012-03-26 | Plasma processing apparatus and plasma processing method |
CN201280003129.7A CN103140922B (zh) | 2011-04-13 | 2012-03-26 | 等离子处理装置及等离子处理方法 |
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WO2014091578A1 (ja) * | 2012-12-12 | 2014-06-19 | 富士機械製造株式会社 | ダイ供給装置 |
KR101686032B1 (ko) * | 2013-03-28 | 2016-12-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
JP5987976B2 (ja) * | 2013-04-18 | 2016-09-07 | 株式会社島津製作所 | 基板検出システム及び基板検出方法 |
CN104425331B (zh) * | 2013-09-09 | 2017-09-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 转盘定位装置、装载传输***及等离子体加工设备 |
CN105448631B (zh) * | 2014-06-12 | 2017-07-25 | 中微半导体设备(上海)有限公司 | 一种基片安装平台和一种等离子处理装置及其运行方法 |
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