JP5522147B2 - 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法 - Google Patents
窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 212
- 150000004767 nitrides Chemical class 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 16
- 229910002601 GaN Inorganic materials 0.000 claims description 201
- 230000004888 barrier function Effects 0.000 claims description 192
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 115
- 229910052738 indium Inorganic materials 0.000 claims description 106
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 106
- 239000000203 mixture Substances 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 70
- 230000010287 polarization Effects 0.000 claims description 44
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- 239000010408 film Substances 0.000 description 35
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- 238000010586 diagram Methods 0.000 description 21
- 238000005253 cladding Methods 0.000 description 20
- 239000013078 crystal Substances 0.000 description 20
- 230000007423 decrease Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 239000000470 constituent Substances 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
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- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 230000002040 relaxant effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Description
井戸層は、InGaNである。基板の主面は、六方晶系窒化ガリウム系半導体のc軸方向に直交する面から63度以上80度以下または100度以上117度以下の範囲内の傾斜角で傾斜した基準平面に沿って延びている。
p型窒化ガリウム系半導体層19のp型ドーパントは、例えばマグネシウム(Mg)である。p型窒化ガリウム系半導体層19は、発光層17の井戸層17cに接している。p型ガイド層19aは、発光層17上に設けられ、発光層17に接している。p型ガイド層19aは、一又は複数のp型の窒化ガリウム系半導体層を含む。p型ガイド層19aは、アンドープ(ud)のInGaN層を含む。このアンドープのInGaN層は、井戸層17cに接している。p型ガイド層19aは、このアンドープのInGaN層上に設けられたp型のInGaN層を含む。このp型のInGaN層は、アンドープのInGaN層に接している。p型ガイド層19aは、このp型のInGaN層上に設けられたp型のGaN層を含む。このp型のGaN層は、p型のInGaN層に接している。
次に、実施形態に係る発光素子11の実施例について説明する。図5は、発光素子11の実施例の構成を示す図である。図5に示す構成は、エピタキシャル基板EP1の構成に対応する。まず、半極性の主面(主面13a_1及び主面13aに対応)を有するGaN基板(基板13_1及び支持基体13に対応)を用意した。GaN基板の主面は、c面からGaN基板のm軸に向けて75度だけ傾斜している(20−21)面に沿って、延びていた。そして、GaN基板をNH3及びH2の雰囲気中において、摂氏1050度程度のもとで10分程度の間だけ保持し、前処理(サーマルクリーニング)を行う。
Claims (16)
- 六方晶系窒化物半導体からなり、前記六方晶系窒化物半導体のc面から予め規定された方向に傾斜した主面を有する支持基体と、
前記支持基体の前記主面上に設けられたn型窒化ガリウム系半導体層と、
前記n型窒化ガリウム系半導体層上に設けられ、窒化ガリウム系半導体からなる発光層と、
前記発光層上に設けられたp型窒化ガリウム系半導体層と、
を備え、
前記発光層は、多重量子井戸構造を有し、
前記多重量子井戸構造は、少なくとも二つの井戸層と、少なくとも一つのバリア層とからなり、
前記バリア層は、前記二つの井戸層の間に設けられ、
前記二つの井戸層は、InGaNからなり、
前記二つの井戸層は、0.15以上0.50以下の範囲にある第1のインジウム組成を有し、
前記c面に対する前記主面の傾斜角は、50度以上80度以下の範囲、及び、130度以上170度以下の範囲、の何れかの範囲にあり、
前記バリア層の膜厚は、1.0nm以上3.5nm以下の範囲にあり、
前記発光層に生じるピエゾ分極の向きは、前記c面上に設けられる井戸層に生じるピエゾ分極の向きと逆向きになっており、
前記第1のインジウム組成は、0.24以上0.40以下の範囲にある、
ことを特徴とする窒化物半導体発光素子。 - 前記バリア層の膜厚は、前記井戸層の膜厚に0.50nmを足し合わせた値以下であり、且つ、前記井戸層の膜厚から0.50nmを差し引いた値以上である、ことを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記バリア層は、InGaNからなり、
前記バリア層は、0.01以上0.10以下の範囲にある第2のインジウム組成を有する、ことを特徴とする請求項1又は2に記載の窒化物半導体発光素子。 - 前記n型窒化ガリウム系半導体層は、InGaN層を有し、
前記InGaN層上に前記発光層が設けられ、
前記n型窒化ガリウム系半導体層の内部における前記InGaN層の前記支持基体側の表面にミスフィット転位が存在し、
前記ミスフィット転位は、前記InGaN層の前記表面に直交し前記六方晶系窒化物半導体のc軸を含む基準面と前記InGaN層の前記表面とが共有する基準軸と、前記c軸とに直交する方向に延びており、
前記ミスフィット転位の密度は、5×103cm−1以上1×105cm−1以下の範囲にある、ことを特徴とする請求項1〜請求項3の何れか一項に記載の窒化物半導体発光素子。 - 前記InGaN層は、0.03以上0.05以下の範囲にある第3のインジウム組成を有する、ことを特徴とする請求項4に記載の窒化物半導体発光素子。
- 前記第2のインジウム組成は、前記p型窒化ガリウム系半導体層の側から、前記n型窒化ガリウム系半導体層の側に向かって、増加している、ことを特徴とする請求項3に記載の窒化物半導体発光素子。
- 前記c面に対する前記主面の傾斜角は、63度以上80度以下の範囲にある、ことを特徴とする請求項1〜請求項6の何れか一項に記載の窒化物半導体発光素子。
- 前記第2のインジウム組成は、0.01以上0.06以下の範囲にある、ことを特徴とする請求項3に記載の窒化物半導体発光素子。
- 六方晶系窒化物半導体からなり、前記六方晶系窒化物半導体のc面から予め規定された方向に傾斜した主面を有する基板を用意する工程と、
前記基板の前記主面上にn型窒化ガリウム系半導体層を成長する工程と、
前記n型窒化ガリウム系半導体層上に、窒化ガリウム系半導体からなる発光層を成長する工程と、
前記発光層上にp型窒化ガリウム系半導体層を成長する工程と、
を備え、
前記発光層は、少なくとも第1の井戸層及び第2の井戸層と、少なくとも一つのバリア層とを有し、
前記発光層を成長する工程では、前記n型窒化ガリウム系半導体層上において、前記第1の井戸層、前記バリア層、前記第2の井戸層を順に成長し、
前記第1の井戸層及び前記第2の井戸層は、InGaNからなり、
前記第1の井戸層及び前記第2の井戸層は、0.15以上0.50以下の範囲にある第1のインジウム組成を有し、
前記c面に対する前記主面の傾斜角は、50度以上80度以下の範囲、及び、130度以上170度以下の範囲、の何れかの範囲にあり、
前記バリア層の膜厚は、1.0nm以上3.5nm以下の範囲にあり、
前記発光層に生じるピエゾ分極の向きは、前記c面上に設けられる井戸層に生じるピエゾ分極の向きと逆向きになっており、
前記第1のインジウム組成は、0.24以上0.40以下の範囲にある、
ことを特徴とする窒化物半導体発光素子の作製方法。 - 前記バリア層の膜厚は、前記井戸層の膜厚に0.50nmを足し合わせた値以下であり、且つ、前記井戸層の膜厚から0.50nmを差し引いた値以上である、ことを特徴とする請求項9に記載の窒化物半導体発光素子の作製方法。
- 前記バリア層は、InGaNからなり、
前記バリア層は、0.01以上0.10以下の範囲にある第2のインジウム組成を有する、ことを特徴とする請求項9又は請求項10に記載の窒化物半導体発光素子の作製方法。 - 前記n型窒化ガリウム系半導体層は、InGaN層を有し、
前記InGaN層上に前記発光層が設けられ、
前記n型窒化ガリウム系半導体層の内部における前記InGaN層の前記基板側の表面にミスフィット転位が存在し、
前記ミスフィット転位は、前記InGaN層の前記表面に直交し前記六方晶系窒化物半導体のc軸を含む基準面と前記InGaN層の前記表面とが共有する基準軸と、前記c軸とに直交する方向に延びており、
前記ミスフィット転位の密度は、5×103cm−1以上1×105cm−1以下の範囲にある、ことを特徴とする請求項9〜請求項11の何れか一項に記載の窒化物半導体発光素子の作製方法。 - 前記InGaN層は、0.03以上0.05以下の範囲にある第3のインジウム組成を有する、ことを特徴とする請求項12に記載の窒化物半導体発光素子の作製方法。
- 前記第2のインジウム組成は、前記p型窒化ガリウム系半導体層の側から、前記n型窒化ガリウム系半導体層の側に向かって、増加している、ことを特徴とする請求項11に記載の窒化物半導体発光素子の作製方法。
- 前記c面に対する前記主面の傾斜角は、63度以上80度以下の範囲にある、ことを特徴とする請求項9〜請求項14の何れか一項に記載の窒化物半導体発光素子の作製方法。
- 前記第2のインジウム組成は、0.01以上0.06以下の範囲にある、ことを特徴とする請求項11に記載の窒化物半導体発光素子の作製方法。
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