JP5496964B2 - 光センサ装置及びeuv放射を検出する方法 - Google Patents
光センサ装置及びeuv放射を検出する方法 Download PDFInfo
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- JP5496964B2 JP5496964B2 JP2011162445A JP2011162445A JP5496964B2 JP 5496964 B2 JP5496964 B2 JP 5496964B2 JP 2011162445 A JP2011162445 A JP 2011162445A JP 2011162445 A JP2011162445 A JP 2011162445A JP 5496964 B2 JP5496964 B2 JP 5496964B2
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- X-Ray Techniques (AREA)
Description
[0013] -放射ビームB(例えば、UV放射またはEUV放射)を調整するように構成された照明システム(イルミネータ)ILと、
[0014] -パターニングデバイス(例えば、マスク)MAを保持するように構成され、かつ特定のパラメータに従ってパターニングデバイスを正確に位置付けるように構成された第1のポジショナPMに連結されているサポート構造(例えば、マスクテーブル)MTと、
[0015] -基板(例えば、レジストコートウェーハ)Wを保持するように構成され、かつ特定のパラメータに従って基板を正確に位置付けるように構成された第2のポジショナPWに連結されている基板テーブル(例えば、ウェーハテーブル)WTと、
[0016] -パターニングデバイスMAによって放射ビームBに付与されたパターンを基板Wのターゲット部分C(例えば、1つ以上のダイを含む)上に投影するように構成されている投影システム(例えば、屈折投影レンズシステム)PSとを備える。
Claims (11)
- 極端紫外線リソグラフィシステムにおける使用のための光センサ装置であって、
回転可能プレートの表面の一部をセンサ表面として利用する光センサと、
前記プレートの表面のうち前記センサ表面とは別の部分からデブリを除去する除去機構と
を含む、光センサ装置。 - 前記プレートは、EUV半透明プレートである、請求項1に記載の光センサ装置。
- 前記EUV半透明プレートは、前記EUV源からEUV放射ビームのスペクトル範囲を選択的に透過させる、請求項2に記載の光センサ装置。
- 前記EUV半透明プレートは、10〜20nmの範囲内の波長を有する放射を選択的に通過させる、請求項2に記載の光センサ装置。
- 前記EUV半透明プレートは、Nbフィルタ、Zr/Si多層フィルタまたはZr/Nb多層フィルタを含む、請求項2に記載の光センサ装置。
- 前記除去機構は、水素ラジカル供給システムを含む、請求項1〜5のいずれかに記載の光センサ装置。
- 前記センサ表面は、0.2より少ない水素ラジカル再結合定数を有するキャップ層を含む、請求項1〜6のいずれかに記載の光センサ装置。
- 前記キャップ層は、Si3N4を含む、請求項7に記載の光センサ装置。
- 前記EUV源は、レーザ誘導プラズマ源または放電生成プラズマ源である、請求項1〜8のいずれかに記載の光センサ装置。
- 前記プラズマ源は、SnまたはXeを含む、請求項9に記載の光センサ装置。
- EUV放射を検出する方法であって、
前記EUV放射を検出するために回転可能プレートの表面の一部をセンサ表面として利用する光センサの前記センサ表面をEUV放射を生成するEUV源に露光させることと、
前記プレートの表面のうち前記センサ表面とは別の部分からデブリを除去することと
を含む、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/527,731 | 2006-09-27 | ||
US11/527,731 US7541603B2 (en) | 2006-09-27 | 2006-09-27 | Radiation system and lithographic apparatus comprising the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530300A Division JP5208119B2 (ja) | 2006-09-27 | 2007-09-25 | 光センサ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011228742A JP2011228742A (ja) | 2011-11-10 |
JP5496964B2 true JP5496964B2 (ja) | 2014-05-21 |
Family
ID=39224584
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530300A Active JP5208119B2 (ja) | 2006-09-27 | 2007-09-25 | 光センサ装置 |
JP2011162445A Active JP5496964B2 (ja) | 2006-09-27 | 2011-07-25 | 光センサ装置及びeuv放射を検出する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009530300A Active JP5208119B2 (ja) | 2006-09-27 | 2007-09-25 | 光センサ装置 |
Country Status (8)
Country | Link |
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US (2) | US7541603B2 (ja) |
EP (1) | EP2082289A2 (ja) |
JP (2) | JP5208119B2 (ja) |
KR (1) | KR101151769B1 (ja) |
CN (1) | CN101583909B (ja) |
SG (1) | SG171633A1 (ja) |
TW (2) | TWI371663B (ja) |
WO (1) | WO2008039068A2 (ja) |
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US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
JP5305568B2 (ja) * | 2006-05-22 | 2013-10-02 | 株式会社東芝 | 露光装置及びケミカルフィルタ寿命検知方法 |
US7541603B2 (en) * | 2006-09-27 | 2009-06-02 | Asml Netherlands B.V. | Radiation system and lithographic apparatus comprising the same |
JP4973425B2 (ja) * | 2007-10-03 | 2012-07-11 | ウシオ電機株式会社 | 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置 |
NL1036832A1 (nl) * | 2008-04-15 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus. |
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JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
US20120147350A1 (en) * | 2009-06-30 | 2012-06-14 | Asml Netherlands B.V | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter |
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2006
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2007
- 2007-09-19 TW TW096134960A patent/TWI371663B/zh active
- 2007-09-19 TW TW101123937A patent/TWI485532B/zh active
- 2007-09-25 KR KR1020097006350A patent/KR101151769B1/ko active IP Right Grant
- 2007-09-25 CN CN2007800355990A patent/CN101583909B/zh active Active
- 2007-09-25 JP JP2009530300A patent/JP5208119B2/ja active Active
- 2007-09-25 EP EP07808590A patent/EP2082289A2/en not_active Withdrawn
- 2007-09-25 WO PCT/NL2007/050466 patent/WO2008039068A2/en active Application Filing
- 2007-09-25 SG SG201103036-8A patent/SG171633A1/en unknown
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SG171633A1 (en) | 2011-06-29 |
KR101151769B1 (ko) | 2012-06-15 |
CN101583909B (zh) | 2011-07-20 |
CN101583909A (zh) | 2009-11-18 |
TW200821771A (en) | 2008-05-16 |
JP2011228742A (ja) | 2011-11-10 |
JP2010505261A (ja) | 2010-02-18 |
TWI485532B (zh) | 2015-05-21 |
US7541603B2 (en) | 2009-06-02 |
US7863591B2 (en) | 2011-01-04 |
EP2082289A2 (en) | 2009-07-29 |
WO2008039068A2 (en) | 2008-04-03 |
KR20090074170A (ko) | 2009-07-06 |
TWI371663B (en) | 2012-09-01 |
TW201243520A (en) | 2012-11-01 |
JP5208119B2 (ja) | 2013-06-12 |
US20090309048A1 (en) | 2009-12-17 |
WO2008039068A3 (en) | 2008-08-14 |
US20080074655A1 (en) | 2008-03-27 |
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