JP5477131B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5477131B2 JP5477131B2 JP2010089468A JP2010089468A JP5477131B2 JP 5477131 B2 JP5477131 B2 JP 5477131B2 JP 2010089468 A JP2010089468 A JP 2010089468A JP 2010089468 A JP2010089468 A JP 2010089468A JP 5477131 B2 JP5477131 B2 JP 5477131B2
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- 239000000758 substrate Substances 0.000 title claims description 36
- 239000007788 liquid Substances 0.000 claims description 118
- 230000007246 mechanism Effects 0.000 claims description 55
- 238000001816 cooling Methods 0.000 claims description 41
- 239000012530 fluid Substances 0.000 claims description 30
- 238000002360 preparation method Methods 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 201
- 235000012431 wafers Nutrition 0.000 description 170
- 238000004140 cleaning Methods 0.000 description 44
- 238000000034 method Methods 0.000 description 21
- 239000000243 solution Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 206010065929 Cardiovascular insufficiency Diseases 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
この液槽を内部の処理空間に配置し、当該液槽内の液体を超臨界状態の流体に置換してから、この処理空間内を減圧することにより、前記流体を気体にして前記被処理基板を乾燥する処理が行われる処理容器と、
この処理容器に、液状態または超臨界状態で前記流体を供給する流体供給部と、
前記液槽内の液体が排出される排液部と、
前記液槽を、前記処理容器内の処理位置と、当該処理容器の外部の気相雰囲気であり当該液槽に対して基板の受け渡しが行われる準備位置との間で移動させるための移動機構と、
前記処理容器に供給された流体を超臨界状態とし、または、その超臨界状態を維持するために、前記処理空間を加熱する加熱機構と、
前記準備位置に移動した液槽を冷却する冷却機構と、を備えたことを特徴とする。
(a)前記液体は揮発性の液体であり、当該液体は前記冷却機構による冷却が行われてから液槽に供給されること。
(b)被処理基板は、前記冷却機構による液槽の冷却が行われてからこの液槽内の液体に浸漬されること。
(c)前記液槽は被処理基板を縦向きに保持するように構成されていること。
(d)前記移動機構は、前記液槽を横方向に移動させるように構成されていること。
(e)前記液槽は基板を液体に浸漬した状態で前記準備位置から処理位置に移動し、前記液槽には、処理容器に形成された搬入出口を開閉する蓋部材が一体に設けられ、前記開口部を塞いでいる蓋部材の開放を阻止するためのストッパ機構を備えること。
そして筐体401内を手前側から見ると、これら搬入棚42及び搬出棚43の配置位置を手前側から見ると、これらの棚42、43は、ウエハWの受け渡しを行って超臨界処理の準備をする準備位置にて上面に向かって開口する内チャンバー32の上方側、側方寄りの位置に配置されている。これにより、上面に向けて開口する内チャンバー32へのウエハWの搬送経路が確保され、搬入棚42や搬出棚43と干渉することなく迅速にウエハWを搬送することができる。
そして取り出されたウエハWは搬出棚43を介して第1の搬送機構121に受け渡され、搬入時とは逆の経路を通ってFOUP7内に格納され、ウエハWに対する一連の動作が完了する。
一方、外チャンバー31側においては、電源部313の出力を低出力に切り替えて、ヒーター312により外チャンバー31本体が既述の予熱温度に維持された状態で待機する。
そして外チャンバー31の加熱機構についても抵抗発熱体により形成する場合に限定されず、例えば外チャンバー31本体の内部に熱媒を通流させる通流路を形成して加熱を行ってもよい。
1 洗浄処理システム
2 洗浄装置
3 超臨界処理装置
31 外チャンバー
310 処理空間
312 ヒーター
313 電源部
32 内チャンバー
331 側壁部材
335 噴出孔
511 CO2供給ライン
521 IPA供給ライン
541 冷却用空気供給ライン
542 冷却用空気供給部
591 超臨界流体供給ライン
592 液体排出ライン
6 制御部
7 FOUP
Claims (6)
- 被処理基板を保持して液体に浸漬するための液槽と、
この液槽を内部の処理空間に配置し、当該液槽内の液体を超臨界状態の流体に置換してから、この処理空間内を減圧することにより、前記流体を気体にして前記被処理基板を乾燥する処理が行われる処理容器と、
この処理容器に、液状態または超臨界状態で前記流体を供給する流体供給部と、
前記液槽内の液体が排出される排液部と、
前記液槽を、前記処理容器内の処理位置と、当該処理容器の外部の気相雰囲気であり当該液槽に対して基板の受け渡しが行われる準備位置との間で移動させるための移動機構と、
前記処理容器に供給された流体を超臨界状態とし、または、その超臨界状態を維持するために、前記処理空間を加熱する加熱機構と、
前記準備位置に移動した液槽を冷却する冷却機構と、を備えたことを特徴とする基板処理装置。 - 前記液槽は基板を液体に浸漬した状態で前記準備位置から処理位置に移動し、
前記液槽には、処理容器に形成された搬入出口を開閉する蓋部材が一体に設けられ、
前記開口部を塞いでいる蓋部材の開放を阻止するためのストッパ機構を備えることを特徴とする請求項1記載の基板処理装置。 - 前記液体は揮発性の液体であり、当該液体は前記冷却機構による冷却が行われてから液槽に供給されることを特徴とする請求項1または2に記載の基板処理装置。
- 被処理基板は、前記冷却機構による液槽の冷却が行われてからこの液槽内の液体に浸漬されることを特徴とする請求項1ないし3のいずれか一つに記載の基板処理装置。
- 前記液槽は被処理基板を縦向きに保持するように構成されていることを特徴とする請求項1ないし4のいずれか一つに記載の基板処理装置。
- 前記移動機構は、前記液槽を横方向に移動させるように構成されていることを特徴とする請求項1ないし5のいずれか一つに記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2010089468A JP5477131B2 (ja) | 2010-04-08 | 2010-04-08 | 基板処理装置 |
KR1020110020418A KR101596064B1 (ko) | 2010-04-08 | 2011-03-08 | 기판 처리 장치 |
US13/078,360 US9004079B2 (en) | 2010-04-08 | 2011-04-01 | Substrate processing apparatus |
CN201110086730.4A CN102237260B (zh) | 2010-04-08 | 2011-04-07 | 基板处理装置 |
TW100112273A TWI500099B (zh) | 2010-04-08 | 2011-04-08 | 基板處理裝置 |
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JP2010089468A JP5477131B2 (ja) | 2010-04-08 | 2010-04-08 | 基板処理装置 |
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JP2011222697A JP2011222697A (ja) | 2011-11-04 |
JP5477131B2 true JP5477131B2 (ja) | 2014-04-23 |
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US (1) | US9004079B2 (ja) |
JP (1) | JP5477131B2 (ja) |
KR (1) | KR101596064B1 (ja) |
CN (1) | CN102237260B (ja) |
TW (1) | TWI500099B (ja) |
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JP5459185B2 (ja) * | 2010-11-29 | 2014-04-02 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
KR101874901B1 (ko) * | 2011-12-07 | 2018-07-06 | 삼성전자주식회사 | 기판 건조 장치 및 방법 |
KR101681190B1 (ko) | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | 기판 건조 장치 및 방법 |
JP6876417B2 (ja) * | 2016-12-02 | 2021-05-26 | 東京エレクトロン株式会社 | 基板処理装置の洗浄方法および基板処理装置の洗浄システム |
KR102358561B1 (ko) | 2017-06-08 | 2022-02-04 | 삼성전자주식회사 | 기판 처리 장치 및 집적회로 소자 제조 장치 |
JP7406385B2 (ja) * | 2020-01-31 | 2023-12-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
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CN111854356B (zh) * | 2020-08-06 | 2022-02-08 | 郑州工业应用技术学院 | 一种电子产品用电阻生产的烘干炉及其使用方法 |
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JP2022147217A (ja) * | 2021-03-23 | 2022-10-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN114485093B (zh) * | 2022-02-17 | 2023-01-13 | 季华恒一(佛山)半导体科技有限公司 | 甩干机的烘干***、方法、设备、存储介质及甩干机 |
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2010
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- 2011-03-08 KR KR1020110020418A patent/KR101596064B1/ko active IP Right Grant
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JP2011222697A (ja) | 2011-11-04 |
CN102237260B (zh) | 2015-07-22 |
TWI500099B (zh) | 2015-09-11 |
KR20110113132A (ko) | 2011-10-14 |
TW201205708A (en) | 2012-02-01 |
US20110247662A1 (en) | 2011-10-13 |
KR101596064B1 (ko) | 2016-02-19 |
CN102237260A (zh) | 2011-11-09 |
US9004079B2 (en) | 2015-04-14 |
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