JP5453663B2 - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
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- JP5453663B2 JP5453663B2 JP2012522729A JP2012522729A JP5453663B2 JP 5453663 B2 JP5453663 B2 JP 5453663B2 JP 2012522729 A JP2012522729 A JP 2012522729A JP 2012522729 A JP2012522729 A JP 2012522729A JP 5453663 B2 JP5453663 B2 JP 5453663B2
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- Prior art keywords
- layer
- thin film
- film transistor
- semiconductor layer
- electrode
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims description 35
- 239000010410 layer Substances 0.000 claims description 128
- 239000004065 semiconductor Substances 0.000 claims description 72
- 239000010949 copper Substances 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- -1 was perforated Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Description
(1)酸化物半導体からなる半導体層と、銅を主体とする層であるソース電極およびドレイン電極と、上記半導体層と、上記ソース電極および上記ドレイン電極の各々との間に設けられた酸化物反応層と、を有し、上記酸化物反応層と上記半導体層との間に高コンダクタンス層としてのIn濃化層を有することを特徴とする薄膜トランジスタ。
(2)(1)において、上記半導体層は、酸化物反応層およびIn濃化層を介して、ソース電極およびドレイン電極の各々と低抵抗のオーミック接合性を有する薄膜トランジスタ。
(3)(1)または(2)において、上記半導体層は、非晶質のInGaZnO x である薄膜トランジスタ。
(4)(1)から(3)において、上記ソース電極および上記ドレイン電極は、CuMn合金からなる薄膜トランジスタ。
(5)(1)から(4)において、上記酸化物反応層は、MnO x を主体とする層である薄膜トランジスタ。
(6)(5)において、上記酸化物反応層は、Cu,In,Ga,Znを含む薄膜トランジスタ。
(7)(4)において、上記酸化物反応層は、ソース電極およびドレイン電極の表層を形成するCuMn合金に接して設けられている薄膜トランジスタ。
2 ゲート電極
3 ゲート絶縁膜
4 半導体層
5 ソース電極
6 ドレイン電極
7 保護膜
10 薄膜トランジスタ
20 界面
21 In濃化層
22 酸化物反応層
Claims (7)
- 酸化物半導体からなる半導体層と、
銅を主体とする層であるソース電極およびドレイン電極と、
上記半導体層と、上記ソース電極および上記ドレイン電極の各々との間に設けられた酸化物反応層と、
を有し、
上記酸化物反応層と上記半導体層との間に高コンダクタンス層としてのIn濃化層を有する、
ことを特徴とする薄膜トランジスタ。 - 上記半導体層は、酸化物反応層およびIn濃化層を介して、ソース電極およびドレイン電極の各々と低抵抗のオーミック接合性を有する、請求項1に記載の薄膜トランジスタ。
- 上記半導体層は、非晶質のInGaZnO x である、請求項1または2に記載の薄膜トランジスタ。
- 上記ソース電極および上記ドレイン電極は、CuMn合金からなる、請求項1から3の何れか1項に記載の薄膜トランジスタ。
- 上記酸化物反応層は、MnO x を主体とする層である、請求項1から4の何れか1項に記載の薄膜トランジスタ。
- 上記酸化物反応層は、Cu,In,Ga,Znを含む、請求項5に記載の薄膜トランジスタ。
- 上記酸化物反応層は、ソース電極およびドレイン電極の表層を形成するCuMn合金に接して設けられている、請求項4に記載の薄膜トランジスタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012522729A JP5453663B2 (ja) | 2010-07-02 | 2011-06-30 | 薄膜トランジスタ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010152112 | 2010-07-02 | ||
JP2010152112 | 2010-07-02 | ||
PCT/JP2011/065526 WO2012002574A1 (ja) | 2010-07-02 | 2011-06-30 | 薄膜トランジスタ |
JP2012522729A JP5453663B2 (ja) | 2010-07-02 | 2011-06-30 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012002574A1 JPWO2012002574A1 (ja) | 2013-08-29 |
JP5453663B2 true JP5453663B2 (ja) | 2014-03-26 |
Family
ID=45402268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012522729A Expired - Fee Related JP5453663B2 (ja) | 2010-07-02 | 2011-06-30 | 薄膜トランジスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8866140B2 (ja) |
JP (1) | JP5453663B2 (ja) |
CN (1) | CN102971857A (ja) |
WO (1) | WO2012002574A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9991392B2 (en) | 2013-12-03 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5912046B2 (ja) * | 2012-01-26 | 2016-04-27 | 株式会社Shカッパープロダクツ | 薄膜トランジスタ、その製造方法および該薄膜トランジスタを用いた表示装置 |
US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
JP2013210732A (ja) * | 2012-03-30 | 2013-10-10 | Dainippon Printing Co Ltd | タッチパネルセンサ、タッチパネルモジュールおよびタッチパネルセンサの製造方法 |
KR102316107B1 (ko) * | 2012-05-31 | 2021-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015159132A (ja) * | 2012-06-14 | 2015-09-03 | パナソニック株式会社 | 薄膜トランジスタ |
KR102161077B1 (ko) * | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
WO2015049818A1 (ja) * | 2013-10-03 | 2015-04-09 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法 |
US9595469B2 (en) | 2013-11-04 | 2017-03-14 | Infineon Technologies Ag | Semiconductor device and method for producing the same |
US9882014B2 (en) | 2013-11-29 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20150155313A1 (en) * | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6527416B2 (ja) * | 2014-07-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102281846B1 (ko) * | 2015-01-02 | 2021-07-26 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN106935659B (zh) * | 2017-05-11 | 2021-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板以及显示装置 |
CN107170832A (zh) * | 2017-06-14 | 2017-09-15 | 华南理工大学 | 一种氧化物薄膜晶体管及其制备方法 |
JP7398860B2 (ja) * | 2018-08-08 | 2023-12-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073863A (ja) * | 2004-09-03 | 2006-03-16 | Nikko Materials Co Ltd | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 |
JP2006165529A (ja) * | 2004-11-10 | 2006-06-22 | Canon Inc | 非晶質酸化物、及び電界効果型トランジスタ |
JP2007157916A (ja) * | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP2007173489A (ja) * | 2005-12-21 | 2007-07-05 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP2008282887A (ja) * | 2007-05-09 | 2008-11-20 | Tohoku Univ | 液晶表示装置及びその製造方法 |
JP2009278115A (ja) * | 2008-05-15 | 2009-11-26 | Samsung Electronics Co Ltd | トランジスタとこれを含む半導体素子及びそれらの製造方法 |
JP2010003822A (ja) * | 2008-06-19 | 2010-01-07 | Idemitsu Kosan Co Ltd | 薄膜トランジスタおよびその製造方法 |
JP2010021333A (ja) * | 2008-07-10 | 2010-01-28 | Fujifilm Corp | 金属酸化物膜とその製造方法、及び半導体装置 |
JP2010067954A (ja) * | 2008-08-14 | 2010-03-25 | Fujifilm Corp | 薄膜電界効果型トランジスタ |
JP2010087223A (ja) * | 2008-09-30 | 2010-04-15 | Toppan Printing Co Ltd | 薄膜トランジスタおよびアクティブマトリクスディスプレイ |
JP2010199307A (ja) * | 2009-02-25 | 2010-09-09 | Fujifilm Corp | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3302894B2 (ja) | 1996-11-25 | 2002-07-15 | 株式会社東芝 | 液晶表示装置 |
JP4494610B2 (ja) | 2000-09-04 | 2010-06-30 | 株式会社フルヤ金属 | 薄膜形成用スパッタリングターゲット材 |
JP3754011B2 (ja) | 2002-09-04 | 2006-03-08 | デプト株式会社 | 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品 |
JP4439861B2 (ja) | 2002-09-20 | 2010-03-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR100883769B1 (ko) | 2002-11-08 | 2009-02-18 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
JP2005158887A (ja) | 2003-11-21 | 2005-06-16 | Dept Corp | 回路基板及びその製造方法 |
JP2005166757A (ja) | 2003-11-28 | 2005-06-23 | Advanced Lcd Technologies Development Center Co Ltd | 配線構造体、配線構造体の形成方法、薄膜トランジスタ、薄膜トランジスタの形成方法、及び表示装置 |
JP4065959B2 (ja) | 2004-08-31 | 2008-03-26 | 国立大学法人東北大学 | 液晶表示装置、スパッタリングターゲット材および銅合金 |
US7782413B2 (en) * | 2007-05-09 | 2010-08-24 | Tohoku University | Liquid crystal display device and manufacturing method therefor |
KR101628254B1 (ko) * | 2009-09-21 | 2016-06-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
-
2011
- 2011-06-30 WO PCT/JP2011/065526 patent/WO2012002574A1/ja active Application Filing
- 2011-06-30 JP JP2012522729A patent/JP5453663B2/ja not_active Expired - Fee Related
- 2011-06-30 CN CN2011800328256A patent/CN102971857A/zh active Pending
-
2013
- 2013-01-02 US US13/732,719 patent/US8866140B2/en not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073863A (ja) * | 2004-09-03 | 2006-03-16 | Nikko Materials Co Ltd | 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法 |
JP2006165529A (ja) * | 2004-11-10 | 2006-06-22 | Canon Inc | 非晶質酸化物、及び電界効果型トランジスタ |
JP2007157916A (ja) * | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP2007173489A (ja) * | 2005-12-21 | 2007-07-05 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP2008282887A (ja) * | 2007-05-09 | 2008-11-20 | Tohoku Univ | 液晶表示装置及びその製造方法 |
JP2009278115A (ja) * | 2008-05-15 | 2009-11-26 | Samsung Electronics Co Ltd | トランジスタとこれを含む半導体素子及びそれらの製造方法 |
JP2010003822A (ja) * | 2008-06-19 | 2010-01-07 | Idemitsu Kosan Co Ltd | 薄膜トランジスタおよびその製造方法 |
JP2010021333A (ja) * | 2008-07-10 | 2010-01-28 | Fujifilm Corp | 金属酸化物膜とその製造方法、及び半導体装置 |
JP2010067954A (ja) * | 2008-08-14 | 2010-03-25 | Fujifilm Corp | 薄膜電界効果型トランジスタ |
JP2010087223A (ja) * | 2008-09-30 | 2010-04-15 | Toppan Printing Co Ltd | 薄膜トランジスタおよびアクティブマトリクスディスプレイ |
JP2010199307A (ja) * | 2009-02-25 | 2010-09-09 | Fujifilm Corp | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9991392B2 (en) | 2013-12-03 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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WO2012002574A1 (ja) | 2012-01-05 |
JPWO2012002574A1 (ja) | 2013-08-29 |
US20130112972A1 (en) | 2013-05-09 |
CN102971857A (zh) | 2013-03-13 |
US8866140B2 (en) | 2014-10-21 |
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