TWI478308B - Wiring construction and display device - Google Patents
Wiring construction and display device Download PDFInfo
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- TWI478308B TWI478308B TW100135618A TW100135618A TWI478308B TW I478308 B TWI478308 B TW I478308B TW 100135618 A TW100135618 A TW 100135618A TW 100135618 A TW100135618 A TW 100135618A TW I478308 B TWI478308 B TW I478308B
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- 238000010276 construction Methods 0.000 title 1
- 239000010408 film Substances 0.000 claims description 166
- 239000004065 semiconductor Substances 0.000 claims description 83
- 239000010410 layer Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims description 11
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 42
- 238000009792 diffusion process Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000000470 constituent Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910007541 Zn O Inorganic materials 0.000 description 6
- 238000005275 alloying Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明係使用於液晶顯示裝置,有機電激發光顯示裝置等之平板顯示器之配線構造,其中,有關對於作為半導體層而具有氧化物半導體層之配線構造為有用之技術的構成。
對於由液晶顯示裝置等所代表的顯示裝置之配線材料,係廣泛應用對於加工性優越,電性阻抗比較低的鋁(Al)合金膜。在最近中,作為可適用於顯示裝置的大型化及高畫質化之顯示裝置用配線材料,注目有較Al為低阻抗的銅(Cu)。對於Al的電性阻抗率為2.5×10-6
Ω‧cm而言,Cu的電性阻抗率則為低之1.6×10-6
Ω‧cm。
另一方面,作為使用於顯示裝置之半導體層,注目有氧化物半導體。氧化物半導體係比較於廣泛應用之非晶形矽(a-Si)而具有高載體移動度,光學能帶隙為大,可以低溫成膜之故,期待有對於要求大型‧高解像度‧高速度驅動之下世代顯示器,或耐熱性低之樹脂基板等之適用。
氧化物半導體係包含選自In、Ga、Zn及Sn所成的群之至少一種元素,例如,代表性地可舉出In含有氧化物半導體(In-Ga-Zn-O、In-Zn-Sn-O、In-Zn-O等)。或者,未含有稀有金屬之In而可降低材料成本,作為適合大量生產之氧化物半導體,亦提案有Zn含有氧化物半導體(Zn-Sn-O、Ga-Zn-Sn-O等)(例如,專利文獻1)。
專利文獻1:日本國特開2004-163901號公報
但例如作為底閘極型之TFT的半導體層而使用氧化物半導體,呈作為與該氧化物半導體直接連接而作為源極電極或汲極電極之配線材料而使用Cu膜時,有著Cu擴散於氧化物半導體層,TFT特性產生劣化的問題。因此,於氧化物半導體與Cu膜之間,成為必須適用防止對於氧化物半導體之Cu的擴散之阻障金屬,但當使用作為阻障金屬用金屬所使用之Ti等時,於熱處理後與基底之氧化物半導體引起氧化還原反應,引起氧化物半導體之組成偏差,對於TFT特性帶來不良影響之同時,有著Cu膜剝離的問題。
上述問題係不限於Cu,作為配線材料而使用Al膜時,亦看到同樣問題。
本發明係有鑑於如此情事所作為之構成,其目的為在有機電激發光顯示器或液晶顯示器等之顯示裝置中,提供可形成氧化物半導體層,和例如構成源極電極或汲極電極之金屬膜的安定的界面形成之配線構造,及具備該配線構造之上述顯示裝置。
本發明係提供以下的配線構造及顯示裝置。
(1)一種配線構造,係於基板上,從基板側依序具有薄膜電晶體之半導體層,和金屬配線膜,於前述半導體層與前述金屬配線膜之間具有阻障層之配線構造,其特徵為前述半導體層係由氧化物半導體所成,前述阻障層係由包含TiOx
(x係1.0以上2.0以下)之Ti氧化膜加以構成,且前述Ti氧化膜係與前述半導體層直接連接。
前述氧化物半導體係由包含選自In、Ga、Zn及Sn所成的群之至少一種元素之氧化物加以構成。
(2)如第(1)項記載之配線構造,其中,前述金屬配線膜係具有單層或層積的構造,前述金屬配線膜則具有單層之構造情況,前述金屬配線膜係由純Al膜,含有90原子%以上的Al之Al合金膜,純Cu膜,或含有90原子%以上的Cu之Cu合金膜加以構成,前述金屬配線膜則具有層積的構造情況,前述金屬配線膜係從基板側依序由純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Al膜或含有90原子%以上的Al之Al合金膜;或由純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Cu膜或含有90原子%以上的Cu之Cu合金膜加以構成者。
(3)一種顯示裝置,具備如第(1)項記載之配線構造。
(4)一種顯示裝置,具備如第(2)項記載之配線構造。
如根據本發明,在具備氧化物半導體層之配線構造中,作為為了有效抑制對於構成配線材料之金屬的氧化物半導體之擴散的阻障層,取代Ti金屬而使用Ti氧化物之故,得到安定之TFT特性,可提供更高一層品質之顯示裝置。
本發明者們係為了使源極電極或汲極電極等之電極用金屬配線膜與氧化物半導體層(從基板側而視,氧化物半導體層則配置於下方,金屬配線膜則配置於上方)之安定的界面形成,重複各種檢討。其結果,發現當於成為基底之氧化物半導體層與金屬配線膜之間介入存在Ti氧化膜時,抑制與氧化物半導體之氧化還原反應同時,抑制了對於構成金屬配線膜之金屬氧化物半導體的擴散及對於構成氧化物半導體之元素的金屬配線膜之擴散,可達成所期待之目的,完成本發明。
以下,參照圖1之同時,說明有關本發明之配線構造的實施形態。圖1及後述之配線構造的製造方法係顯示本發明之理想實施形態之一例構成,並非限定於此之內容。例如對於圖1,係顯示底閘極型構造之TFT,但並非限定於此,而亦可為於氧化物半導體層上,依序具備閘極絕緣膜與閘極電極的頂閘極型之TFT。
如圖1所示,本發明之配線構造係於基板1上形成有閘極電極2及閘極絕緣膜3,於其上方形成有氧化物半導體層4。對於氧化物半導體層4上係形成有源極電極‧汲極電極5,於其上方形成有保護膜(絕緣膜)6,藉由連接孔7而透明導電膜8則電性連接於汲極電極5。
並且,有關本發明之配線構造的特徵部分係於源極‧汲極電極5與氧化物半導體層4之間,取代以往之Ti等而具有Ti氧化膜9。如圖1所示,Ti氧化膜9係與氧化物半導體層4直接連接。Ti氧化膜9係抑制經由源極‧汲極電極形成以後之熱經歷(保護層形成等)之與基底氧化物半導體層之還原反應,另外具有作為阻障層之作用(可防止對於半導體層之金屬的擴散及對於源極‧汲極電極之半導體之擴散的作用)。
Ti氧化膜9係含有Ti氧化物。使用本發明之Ti氧化物之組成係可由TiOx
所表示,x係1.0以上2.0以下為佳。更理想之x係1.5,又更理想為2.0。Ti氧化物係只由Ti與O加以構成亦可,在無損本發明之作用的範圍更含有Ti以外的金屬(例如,Al,Mn,Zn)亦可。
對於充分發揮阻障效果係將Ti氧化膜9之膜厚,大概作為10nm以上為佳。更理想為20nm以上,而有更理想為30nm以上。另一方面,當膜厚過厚時,細微加工性變差之故,將其上限作為50nm為佳,更理想為40nm。
本發明之配線構造係作為阻障層而有介入存在有Ti氧化膜9之特徵,對於構成上述配線構造之其他要件係無特別加以限定,可適宜選擇通常使用於配線構造構成。例如,構成源極‧汲極電極5之金屬係考慮電性阻抗等之觀點,理想使用純Al或含有90原子%以上的Al之Al合金膜,或純Cu或含有90原子%以上的Cu之Cu合金膜。此等係亦可由單層使用,或者亦可作為層積構造(從基板側依序,(i)純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Al膜或Al合金膜之層積構造;或(ii)純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Cu膜或Cu合金膜之層積構造)。
在此,「純Al」係指未含有意圖特性改善之第三元素,而僅含有不可避免的不純物之Al。另外,「Al合金」係指大概含有90原子%以上的Al,殘留部係Al以外之合金元素及不可避免的不純物。在此,作為「Al以外之合金元素」係可舉出電性阻抗低的合金元素,具體而言係例如,可舉出Si、Cu、Nd、La等。含有此等合金元素之Al合金係調節添加量,膜厚等,電性阻抗率則抑制為5.0×10-6
Ω‧cm以下為佳。
在此,「純Cu」係指未含有意圖特性改善之第三元素,而僅含有不可避免的不純物之Cu。另外,「Cu合金」係指大概含有90原子%以上的Cu,殘留部係Cu以外之合金元素及不可避免的不純物。在此,作為「Cu以外之合金元素」係可舉出電性阻抗低的合金元素,具體而言係例如,可舉出Mn、Ni、Ge、Mg、Ca等。含有此等合金元素之Cu合金係調節添加量、膜厚等,電性阻抗率則抑制為4.0×10-6
Ω‧cm以下為佳。
在此,「純Ti」係指未含有意圖特性改善之第三元素,而僅含有不可避免的不純物之Ti。另外,「Ti合金」係指大概含有50原子%以上的Ti,殘留部係Ti以外之合金元素及不可避免的不純物。在此,作為「Ti以外之合金元素」係可舉出未對於細微加工性等帶來不良影響之合金元素,具體而言係例如,可舉出Al、Mn、Zn等。
構成氧化物半導體層4之氧化物係選自In、Ga、Zn及Sn所成的群之至少一種元素之氧化物為佳。具體而言,例如,可舉出In含有氧化物半導體(In-Ga-Zn-O、In-Zn-Sn-O、In-Zn-O等)、未含有In之Zn含有氧化物半導體(ZnO、Zn-Sn-O、Ga-Zn-Sn-O、Al-Ga-Zn-O等)等。此等組成比係無特別加以限定,可使用通常所使用範圍之構成。
基板1係如為通常使用於顯示裝置之構成,並無特別加以限定,例如除無鹼玻璃基板,高應變點玻璃基板,碳酸鈉玻璃基板等之透明基板之外,可舉出Si基板,不鏽鋼等薄的金屬板;PET薄膜等之樹脂基板。
使用於閘極電極2之金屬材料亦如為通常使用於顯示裝置之構成,並無特別加以限定,而可舉出電性阻抗率低的Al或Cu的金屬,或此等合金。具體而言,理想使用使用於前述源極‧汲極電極5之金屬材料(純Al或Al合金,純Cu或Cu合金)等。閘極電極2及源極‧汲極電極5係由相同的金屬材料加以構成亦可。
閘極絕緣膜3及保護膜(絕緣膜)6亦如為通常使用於顯示裝置之構成,並無特別加以限定,而代表性例示有矽氧化膜,矽氮化膜,矽氧氮化膜等。除此之外,亦可使用Al2
O3
或Y2
O3
等之氧化物,或層積此等之構成。
使用於透明導電膜8之材料亦如為通常使用於顯示裝置之構成,並無特別加以限定,而例如可舉出ITO,IZO,ZnO等之氧化物導電體。
接著,雖記載為了製造上述配線材料之理想的實施形態之方法,但本發明係並非限定於此之內容。
首先,於基板1上形成閘極電極2及閘極絕緣膜3。上述方法係無特別加以限定,可採用通常使用於顯示裝置之方法,例如可舉出CVD(Chemical Vapor Deposition)法等。
接著,形成氧化物半導體層4。氧化物半導體層4係經由使用與該半導體層4同組成之濺鍍標靶的DC濺鍍法或RF濺鍍法而成膜為佳。
接著,將氧化物半導體層4進行濕蝕刻後,進行圖案化。圖案化之後,為了氧化物半導體層4之膜質改善而進行熱處理(預退火)為佳,由此,電晶體特性之開啟電流及電場效果移動度則上升,電晶體性能則提昇。作為預退火條件係例如,可舉出在大氣或氧環境,以約250~400℃進行約1~2小時的熱處理。
預退火之後,形成本發明之特徵部分之Ti氧化膜9,及源極‧汲極電極5。具體而言,例如經由磁控管濺鍍法而將Ti氧化膜9,及構成源極‧汲極電極5的金屬膜(例如純Ti與純Cu膜的層積)成膜之後,可經由舉離法而形成源極‧汲極電極5。或者,並非如上述經由舉離法而形成源極‧汲極電極5,而亦有預先將特定之Ti氧化膜,純Ti膜,純Cu膜,依序經由濺鍍法而形成之後,經由圖案化而形成源極‧汲極電極5之方法,但在此方法中,在源極‧汲極電極5之蝕刻時,因對於氧化物半導體層4產生損傷之故,電晶體特性則下降。因此,為了迴避如此的問題,於氧化物半導體層4上,預先將SiO2
等之保護膜,經由CVD法等而形成之後,形成源極‧汲極電極5,進行圖案化之方法等亦可。
接著,於氧化物半導體層4上,將保護膜(絕緣膜)6,例如經由CVD法而成膜。氧化物半導體膜4之表面係經由根據CVD法之電漿損傷而容易產生導通化(或許推測生成於氧化物半導體表面之氧缺損成為電子施主之故)之故,於保護膜6之成膜前進行N2
O電漿照射為佳。N2
O電漿之照射條件係採用記載於下述文獻的條件為佳。J. Park們、Appl. Phys. Lett.,1993. 053505(2008)。
接著,依據常用方法,經由藉由連接孔7將透明導電膜8電性連接於汲極電極5之時而得到本發明之配線構造。
以下,舉出實施例而更具體地說明本發明,但本發明係未經由以下的實施例而被限制,亦在可符合前述、後述之內容範圍,可加上變更而實施,此等均包含於本發明之技術範圍。
在本實施例中,使用經由以下的方法而製作之試料,測定氧化物半導體與Ti氧化膜之緊密性,及對於金屬配線膜中之氧化物半導體構成元素的擴散。
首先,於玻璃基板(Corning公司製EAGLE XG,直徑100mm×厚度0.7mm)上,將閘極絕緣膜SiO2
(200nm)進行成膜。閘極絕緣膜係使用電漿CVD法,以載氣:SiH4
與N2
O的混合氣體,成膜功率:100W,成膜溫度:300℃加以成膜。
接著,於上述之閘極絕緣膜上,將表1~表8所示之各種氧化物半導體層,經由使用濺鍍標靶之濺鍍法而成膜。濺鍍條件係如以下,使用標靶的組成係呈得到所期望之半導體層地加以調整的構成。
標靶:In-Ga-Zn-O(IGZO)
Zn-Sn-O(ZTO)
Ga-Zn-Sn-O(GZTO)
In-Zn-Sn-O(IZTO)
基板溫度:室溫
氣壓:5mTorr
氧分壓:O2
/(Ar+O2
)=4%
膜厚:50nm
接著,為了使膜質提昇而進行預退火處理。預退火係在大氣壓下,以350℃進行1小時。
接著,於上述之氧化物半導體膜上,以DC磁控管濺鍍法,將表1~表8所示之各種組成及膜厚的Ti氧化膜(TiOx
,膜厚:30nm)、純Ti膜(膜厚:20nm)、及純Cu之金屬配線膜(膜厚:250nm)進行形成膜。在本實施例中,作為金屬配線膜,使用純Ti與純Cu之層積膜。詳細而言,係經由DC反應性濺鍍法而將Ti氧化膜進行成膜,接著經由DC濺鍍法而將純Ti進行成膜,最後經由DC濺鍍法而將純Cu膜進行成膜。
在此,Ti氧化膜之DC反應性濺鍍條件係如以下。
基板溫度:室溫
環境:Ar+O2
氣壓:2mTorr
另外,純Ti膜及純Cu膜之DC濺鍍條件係如以下。
標靶:純Ti標靶(純Ti膜之情況)
純Cu標靶(純Cu膜之情況)
成膜溫度:室溫
載氣:Ar
氣壓:2mTorr
上述Ti氧化膜(TiOx
)的組成比係經由XPS(X-ray Photoelectron Spectroscopy)測定而調查。詳細而言,係經由Ti氧化膜之Ti2p的XPS光譜的峰值位置及Ti2p與O1s的面積比而調查。
如上述作為所得到之各試料而言,以350℃進行30分鐘熱處理,將熱處理後之各試料與氧化物半導體之緊密性(詳細而言,TiOx
與氧化物半導體之緊密性),依據JIS規格的膠帶剝離試驗,已經由膠帶之剝離試驗進行評估。
詳細而言,於各試料的表面(純Cu膜側),以截切刀切入1mm間隔的棋盤格狀的刻痕(5×5分量的刻痕)。接著,將ULTRA TAPE公司製黑色聚酯膠帶(商品名:超黏膠帶# 6570),牢固地貼合於上述表面上,將上述膠帶之剝下角度保持成60°之同時,一舉將上述膠帶剝下,計算未經由上述膠帶而剝離之棋盤格之區隔數,求得與全區隔之比率(膜殘存率)。測定係進行3次,將3次之平均值作為各試料之膜殘存率。
在本實施例中,將如上述作為所算出之膜殘存率為90%以上的構成判定為○,不足90%的構成判定為×,將○作為合格(與氧化物半導體層之緊密性良好)。
對於上述各試料而言,將對於Cu膜中之氧化物半導體層構成元素之擴散的有無,使用SIMS(Secondary Ion Mass Spectrometry)法加以確認。實驗條件係以一次離子條件O2 +
,1keV加以進行。擴散的判定基準係將於Cu膜中未引起氧化物半導體層構成元素(In、Ga、Zn、Sn)之擴散之Cu/Mo氧化物半導體層之構造,作為參考而使用,對於在其參考構造之Cu膜中的氧化物半導體層構成元素(In、Ga、Zn、Sn)之峰值強度而言,將具有該峰值強度5倍以上強度之構成,判斷為有氧化物半導體層構成元素之擴散(不合格),而將具有不足5倍的強度構成,判斷為無擴散(合格)。
將此等之結果彙整示於表1~表8。
表1~表8係氧化物半導體之組成物不同,表1係各使用IGZO,表2係使用ZTO,表3~5係使用GZTO,表6~8係使用IZTO時之結果。在表1中,在「IGZO之組成比」的欄In、Ga、Zn之各比率係意味構成IGZO之In:Ga:Zn之組成比(原子%比)。
另外,在各表中,「Ti氧化膜(TiOx
)=-」(例如表1之No.1等)係指作為金屬配線膜而僅使用純Ti膜(膜厚50nm)而未使用Ti氧化膜(TiOx
)的例,相當於以往例的構成。
由此等表,即使為使用任一組成之氧化物半導體之情況,在本發明規定,作為阻障層而使用Ti氧化膜(TiOx
)時,抑制對於Cu膜中之氧化物半導體層構成元素之擴散,阻障層與氧化物半導體之緊密性亦為良好。因而,含有阻障層之金屬膜(TiOx
/純Ti/純Cu)之剝離係未產生。對此,僅使用純Ti膜之構成係無法抑制對於氧化物半導體層構成元素之擴散,緊密性亦下降。
另外,對於作為阻障層所使用之Ti氧化物(TiOx
)之組成,氧的比率(x)則脫離在本發明規定之範圍之構成係產生與使用純Ti膜時同樣的問題(氧化物半導體層構成元素之擴散、緊密性下降)。
在上述中,作為金屬配線膜係顯示使用純Ti與純Cu之層積膜時之結果,但使用除此以外之形態(純Ti與純Al之層積膜,純Ti與Cu合金的層積膜,純Ti與Al合金的層積膜之外,僅純Cu,僅純Al,僅Cu合金,僅Al合金之單層膜)時,亦經由實驗確認到得到與上述同樣的結果。
將本申請專利,詳細地另外參照特定之實施形態,已做過詳細說明,該業者可在不脫離本發明之精神與範圍,加上各種變更或修正。
本申請係依據2010年9月30日申請之日本專利申請(日本特願2010-222002)、2011年9月29日申請之日本專利申請(日本特願2011-215071)之構成,其內容係作為參照而編入於此。
如根據本發明,在具備氧化物半導體層之配線構造中,作為為了有效抑制對於構成配線材料之金屬的氧化物半導體之擴散的阻障層,取代Ti金屬而使用Ti氧化物之故,得到安定之TFT特性,可提供更高一層品質之顯示裝置。
1...基板
2...閘極電極
3...閘極絕緣膜
4...氧化物半導體層
5...源極‧汲極電極
6...保護膜(絕緣膜)
7...連接孔
8...透明導電膜
9...Ti氧化膜
圖1係模式性顯示關於本發明之配線構造之構成之剖面圖。
1...基板
2...閘極電極
3...閘極絕緣膜
4...氧化物半導體層
5...源極‧汲極電極
6...保護膜(絕緣膜)
7...連接孔
8...透明導電膜
9...Ti氧化膜
Claims (4)
- 一種配線構造,係於基板上,從基板側依序具有薄膜電晶體之半導體層,和金屬配線膜,於前述半導體層與前述金屬配線膜之間具有阻障層之配線構造,其特徵為前述半導體層係由氧化物半導體所成,前述阻障層係由包含TiOx (x係1.0以上2.0以下)之Ti氧化膜加以構成,且前述Ti氧化膜係與前述半導體層直接連接,前述氧化物半導體係由包含選自In、Ga、Zn及Sn所成的群之至少一種元素之氧化物加以構成。
- 如申請專利範圍第1項記載之配線構造,其中,前述金屬配線膜係具有單層或層積的構造,前述金屬配線膜則具有單層之構造情況,前述金屬配線膜係由純Al膜,含有90原子%以上的Al之Al合金膜,純Cu膜,或含有90原子%以上的Cu之Cu合金膜加以構成,前述金屬配線膜則具有層積的構造情況,前述金屬配線膜係從基板側依序由純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Al膜或含有90原子%以上的Al之Al合金膜;或由純Ti膜或含有50原子%以上的Ti之Ti合金膜,和純Cu膜或含有90原子%以上的Cu之Cu合金膜加以構成者。
- 一種顯示裝置,其特徵為具備如申請專利範圍第1項記載之配線構造。
- 一種顯示裝置,其特徵為具備如申請專利範圍第2項記載之配線構造。
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