JP5443908B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Description
本実施の形態の半導体装置の製造方法は、炭化珪素半導体基板上に炭化珪素半導体層をエピタキシャル成長する工程と、炭化珪素半導体層表面を研磨する工程と、研磨する工程の後に、炭化珪素半導体層に不純物をイオン注入する工程と、不純物を活性化するための熱処理をする工程と、熱処理をする工程の後に、炭化珪素半導体層表面に第1の熱酸化膜を形成する工程と、第1の熱酸化膜を化学的に除去する工程と、炭化珪素半導体層上に電極層を形成する工程と、を有する。
表面除去厚み(mm) 検出された欠陥数(個)
0.0 73
1.0 51
2.0 36
3.0 26
3.5 23
4.0 20
4.5 18
本実施の形態の半導体装置の製造方法は、縦型パワーMOSFETの製造方法である。図3は、本実施の形態の製造方法で製造される半導体装置の断面図である。
本実施の形態の半導体装置の製造方法は、炭化珪素半導体基板上に第1導電型の炭化珪素半導体層をエピタキシャル成長する工程と、炭化珪素半導体層の漏れ電流源となる欠陥位置を特定する工程と、欠陥位置に不純物をイオン注入し、第2導電型の不純物層を形成する工程と、炭化珪素半導体層上に電極パッドを形成する工程と、を有する。
本実施の形態の半導体装置の製造方法は、第3の実施の形態が導電性原子間力顕微鏡で欠陥位置を特定するのと異なり、炭化珪素半導体層上に設けられる金属電極を用いて欠陥位置を特定する。すなわち、欠陥位置を特定する工程の前に、炭化珪素半導体層上に接合障壁制御型ショットキーダイオードの電極パッドより面積の小さい複数の金属電極を形成する工程を備え、欠陥位置を特定する工程において、複数の金属電極と炭化珪素半導体層間との電流を測定する。以下、第3の実施の形態と重複する内容については記述を省略する。
本実施の形態の半導体装置の製造方法は、第3の実施の形態がp型不純物層により漏れ電流源となる欠陥位置を不活性化するのに対し、絶縁膜を欠陥位置に選択的に形成することで、欠陥位置を不活性化する点で異なっている。すなわち、炭化珪素半導体基板上に炭化珪素半導体層をエピタキシャル成長する工程と、炭化珪素半導体層の漏れ電流源となる欠陥位置を特定する工程と、欠陥位置に選択的に絶縁膜を形成する工程と、炭化珪素半導体層上および絶縁膜上に電極パッドを形成する工程と、を有する。以下、第3の実施の形態と重複する内容については記述を省略する。
本実施の形態の半導体装置の製造方法は、第4の実施の形態が漏れ電流源となる欠陥位置を同定するために製造工程途中で用いた、複数の金属電極を除去することなく、最終的なデバイス構造として利用する点で異なっている。また、欠陥位置を不活性化するために用いる絶縁膜を炭化珪素半導体層表面ではなく金属電極上に形成する。すなわち、絶縁膜を形成する工程において、欠陥位置を特定する工程で特定された欠陥位置の金属電極上に絶縁膜を選択的に形成する。以下、第4、第5の実施の形態と重複する内容については記述を省略する。
12 n型エピタキシャル層
20 熱酸化膜
22 熱酸化膜
30 n+型基板
32 n型エピタキシャル層
50 熱酸化膜
52 熱酸化膜
60 n+型基板
62 n型エピタキシャル層
70 p型の不純物層
74 電極パッド
76 金属電極
78 絶縁膜
80 大面積接合障壁型ショットキーダイオード
82 接合障壁型ショットキーダイオード
84 金属電極
82a 良品素子
82b 不良品素子
Claims (2)
- 炭化珪素半導体基板上に炭化珪素半導体層をエピタキシャル成長する工程と、
前記炭化珪素半導体層の漏れ電流源となる欠陥位置を、導電性原子間力顕微鏡を用いて特定する工程と、
前記欠陥位置に、インクジェット方式により選択的に絶縁膜を形成する工程と、
前記炭化珪素半導体層上および前記絶縁膜上に電極パッドを形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記欠陥位置を特定する工程において前記欠陥位置を特定するマッピングデータを作成し、前記絶縁膜を形成する工程において、前記マッピングデータに基づき前記欠陥位置に前記絶縁膜を形成することを特徴とする請求項1記載の半導体装置の製造方法。
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JP2011134815A (ja) * | 2009-12-23 | 2011-07-07 | Denso Corp | ショットキーダイオードと製造方法と製造装置 |
JP5777487B2 (ja) * | 2011-10-28 | 2015-09-09 | 株式会社日立製作所 | 半導体回路 |
TWI441262B (zh) * | 2011-11-18 | 2014-06-11 | Anpec Electronics Corp | 蕭基二極體元件的製作方法 |
JP5615251B2 (ja) * | 2011-12-02 | 2014-10-29 | 三菱電機株式会社 | 結晶欠陥検出方法、炭化珪素半導体装置の製造方法 |
JP2013120822A (ja) * | 2011-12-07 | 2013-06-17 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
CN102610561A (zh) * | 2012-03-22 | 2012-07-25 | 上海华力微电子有限公司 | 一种改善接触孔高度均匀性的方法 |
JP5990444B2 (ja) * | 2012-11-01 | 2016-09-14 | 昭和電工株式会社 | 炭化珪素半導体装置の製造方法 |
JP6053645B2 (ja) | 2013-09-10 | 2016-12-27 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
JP6188217B2 (ja) * | 2013-12-09 | 2017-08-30 | 昭和電工株式会社 | 半導体素子の製造方法。 |
JP2015176995A (ja) | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6331634B2 (ja) * | 2014-04-17 | 2018-05-30 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2016063190A (ja) * | 2014-09-22 | 2016-04-25 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
JP2016081981A (ja) * | 2014-10-14 | 2016-05-16 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP6541620B2 (ja) * | 2016-06-03 | 2019-07-10 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6526343B2 (ja) * | 2016-09-01 | 2019-06-05 | 三菱電機株式会社 | 半導体装置の測定方法 |
JP6642362B2 (ja) * | 2016-09-27 | 2020-02-05 | トヨタ自動車株式会社 | 半導体の製造方法 |
JP6883745B2 (ja) * | 2017-03-24 | 2021-06-09 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
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