JP5433786B2 - スパッタリング装置の生産復帰方法 - Google Patents
スパッタリング装置の生産復帰方法 Download PDFInfo
- Publication number
- JP5433786B2 JP5433786B2 JP2012519206A JP2012519206A JP5433786B2 JP 5433786 B2 JP5433786 B2 JP 5433786B2 JP 2012519206 A JP2012519206 A JP 2012519206A JP 2012519206 A JP2012519206 A JP 2012519206A JP 5433786 B2 JP5433786 B2 JP 5433786B2
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- Japan
- Prior art keywords
- vacuum chamber
- temperature
- target
- sputtering
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004544 sputter deposition Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 25
- 238000001816 cooling Methods 0.000 claims description 12
- 230000000630 rising effect Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 238000012423 maintenance Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 239000000498 cooling water Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000002265 prevention Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (2)
- スパッタリング装置の真空チャンバを大気開放している間、この真空チャンバを室温より高い第1の温度に予加熱する予加熱工程と、真空チャンバを密閉してその内部を真空引きしつつ、真空チャンバとこの真空チャンバ内に配置されたターゲットとを第1の温度より高い第2の温度に昇温してベーキングするベーキング工程と、第2の温度に保持したベーキング工程中、真空チャンバ内の圧力を監視し、この圧力が上昇から下降に転じる時点を判定する判定工程と、判定工程にて真空チャンバ内の圧力が上昇から下降に転じる時点が判定された直後に、真空チャンバのベーキングを終了して少なくとも真空チャンバを所定温度まで強制冷却する冷却工程と、を含むことを特徴とするスパッタリング装置の生産復帰方法。
- 前記冷却工程が終了した後、前記真空チャンバ内にスパッタガスを導入すると共に前記ターゲットに電力投入してターゲットをプレスパッタするプレスパッタ工程を更に含むことを特徴とする請求項1記載のスパッタリング装置の生産復帰方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012519206A JP5433786B2 (ja) | 2010-06-10 | 2011-02-03 | スパッタリング装置の生産復帰方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010132789 | 2010-06-10 | ||
JP2010132789 | 2010-06-10 | ||
PCT/JP2011/000603 WO2011155100A1 (ja) | 2010-06-10 | 2011-02-03 | スパッタリング装置の生産復帰方法 |
JP2012519206A JP5433786B2 (ja) | 2010-06-10 | 2011-02-03 | スパッタリング装置の生産復帰方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011155100A1 JPWO2011155100A1 (ja) | 2013-08-01 |
JP5433786B2 true JP5433786B2 (ja) | 2014-03-05 |
Family
ID=45097722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012519206A Active JP5433786B2 (ja) | 2010-06-10 | 2011-02-03 | スパッタリング装置の生産復帰方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5433786B2 (ja) |
KR (1) | KR101416286B1 (ja) |
TW (1) | TW201204853A (ja) |
WO (1) | WO2011155100A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017183558A (ja) * | 2016-03-31 | 2017-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびドライエッチング装置のメンテナンス方法 |
CN109295427B (zh) * | 2018-09-29 | 2021-01-22 | 厦门乾照光电股份有限公司 | 一种溅射靶材的清洁方法及装置 |
CN113345979A (zh) * | 2021-05-25 | 2021-09-03 | 通威太阳能(成都)有限公司 | 一种真空机台快速复机方法 |
WO2023160809A1 (en) * | 2022-02-25 | 2023-08-31 | Applied Materials, Inc. | Deposition apparatus, substrate processing system and method for processing a substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246726A (ja) * | 1988-08-09 | 1990-02-16 | Nec Corp | 真空装置の真空度改善方法 |
JP2000038668A (ja) * | 1998-07-22 | 2000-02-08 | Toyobo Co Ltd | 真空薄膜形成装置及び製造方法 |
JP2010084211A (ja) * | 2008-10-01 | 2010-04-15 | Ulvac Japan Ltd | スパッタリング方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2937380B2 (ja) * | 1990-02-14 | 1999-08-23 | 株式会社日立製作所 | 配線形成方法およびその装置 |
-
2011
- 2011-02-03 WO PCT/JP2011/000603 patent/WO2011155100A1/ja active Application Filing
- 2011-02-03 KR KR1020127021001A patent/KR101416286B1/ko active IP Right Grant
- 2011-02-03 JP JP2012519206A patent/JP5433786B2/ja active Active
- 2011-02-22 TW TW100105795A patent/TW201204853A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246726A (ja) * | 1988-08-09 | 1990-02-16 | Nec Corp | 真空装置の真空度改善方法 |
JP2000038668A (ja) * | 1998-07-22 | 2000-02-08 | Toyobo Co Ltd | 真空薄膜形成装置及び製造方法 |
JP2010084211A (ja) * | 2008-10-01 | 2010-04-15 | Ulvac Japan Ltd | スパッタリング方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2011155100A1 (ja) | 2013-08-01 |
KR101416286B1 (ko) | 2014-07-08 |
KR20120107011A (ko) | 2012-09-27 |
WO2011155100A1 (ja) | 2011-12-15 |
TW201204853A (en) | 2012-02-01 |
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