JP5422588B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5422588B2 JP5422588B2 JP2011049101A JP2011049101A JP5422588B2 JP 5422588 B2 JP5422588 B2 JP 5422588B2 JP 2011049101 A JP2011049101 A JP 2011049101A JP 2011049101 A JP2011049101 A JP 2011049101A JP 5422588 B2 JP5422588 B2 JP 5422588B2
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- transistor
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Images
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
Description
本実施の形態では、開示する発明の一態様である半導体装置の一例について、図1、図2を参照して説明する。
本実施の形態では、開示する発明の一態様である半導体装置の実施の形態1の構成とは異なる構成の一例について、図3(A)、(B)を参照して説明する。なお本実施の形態において、上記実施の形態1で説明した図1(A)と同じ構成の箇所については、同じ符号を付し説明を省略するものとする。
本実施の形態では、フォトセンサを具備する半導体装置である表示装置について図4乃至図5を参照して説明する。
本実施の形態では、複数のフォトセンサを用いた場合の駆動方法について説明する。
本実施の形態では、フォトセンサを有する半導体装置の構造及び作製方法について説明する。図8に半導体装置の断面図を示す。なお、表示装置を構成する場合も、以下の半導体装置を用いることができる。
本発明の一態様に係る半導体装置は、タッチパネルとして応用可能である。タッチパネルは、表示装置、ノート型パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Discなどの記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係るタッチパネルを用いることができる電子機器として、携帯電話、携帯型ゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤーなど)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。
11 フォトセンサ
12 読み出し制御回路
13 フォトダイオード
14 トランジスタ
15 トランジスタ
16 フォトダイオードリセット信号線
17 ゲート信号線
18 トランジスタ
19 フォトセンサ選択信号線
20 フォトセンサ基準高電位電源線
21 フォトセンサ基準低電位電源線
22 フォトセンサ出力信号線
31 信号
32 信号
33 信号
34 信号
35 信号
41 トランジスタ
42 ゲート信号線
51 信号
51 信号
52 信号
53 信号
54 信号
55 信号
56 信号
100 表示装置
101 画素回路
102 表示素子制御回路
103 フォトセンサ制御回路
104 画素
105 表示素子
106 フォトセンサ
107 表示素子駆動回路
108 表示素子駆動回路
109 フォトセンサ読み出し回路
110 フォトセンサ駆動回路
200 読み出し制御回路
201 トランジスタ
202 保持容量
203 液晶素子
204 フォトダイオード
205 トランジスタ
206 トランジスタ
207 トランジスタ
208 ゲート信号線
209 ゲート信号線
210 フォトダイオードリセット信号線
211 ゲート信号線
212 ビデオデータ信号線
213 フォトセンサ基準信号線
214 フォトセンサ出力信号線
215 ノード
216 トランジスタ
501 基板
502 フォトダイオード
503 トランジスタ
505 液晶素子
506a 半導体層
506b 半導体層
506c 半導体層
507 画素電極
508 液晶
509 対向電極
510 導電膜
511 配向膜
512 配向膜
513 基板
514 カラーフィルタ
515 遮蔽膜
516 スペーサー
517 偏光板
518 偏光板
520 矢印
521 被検出物
522 矢印
531 酸化物絶縁層
532 保護絶縁層
533 層間絶縁層
534 層間絶縁層
540 トランジスタ
541 電極層
542 電極層
543 電極層
545 ゲート電極層
601 信号
602 信号
603 信号
604 信号
605 信号
606 信号
607 信号
608 信号
609 信号
610 期間
611 期間
612 期間
613 期間
621 信号
701 信号
702 信号
703 信号
704 信号
705 信号
706 信号
707 信号
708 信号
709 信号
710 期間
711 期間
712 期間
713 期間
721 信号
5001 筐体
5002 表示部
5003 支持台
5101 筐体
5102 表示部
5103 スイッチ
5104 操作キー
5105 赤外線ポート
5201 筐体
5202 表示部
5203 硬貨投入口
5204 紙幣投入口
5205 カード投入口
5206 通帳投入口
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
Claims (1)
- フォトセンサと、読み出し制御回路と、を有し、
前記フォトセンサは、フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第4のトランジスタと、を有し、
前記読み出し制御回路は、第3のトランジスタを有し、
前記第1のトランジスタのゲートは、前記第4のトランジスタを介して前記フォトダイオードの一方の電極と電気的に接続され、
前記第1のトランジスタのソース又はドレインの一方は、前記第2のトランジスタのソース又はドレインの一方と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第3のトランジスタのソース又はドレインの一方と電気的に接続され、
前記第1のトランジスタと前記第2のトランジスタとの少なくとも一方、前記第3のトランジスタ、及び前記第4のトランジスタは、酸化物半導体層を有し、
前記第3のトランジスタのゲートに印加される電位を入射光に応じて変更し、前記第3のトランジスタの抵抗値を変更し、
前記フォトセンサは、複数設けられており、
前記フォトセンサは、リセット動作、累積動作、及び読み出し動作を行う機能を有し、
複数設けられた前記フォトセンサは、前記リセット動作を共通して行い、前記累積動作を共通して行い、前記読み出し動作を順次行う機能を有することを特徴とする半導体装置。
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KR101773992B1 (ko) | 2017-09-01 |
US9985069B2 (en) | 2018-05-29 |
CN105304661A (zh) | 2016-02-03 |
CN102804380A (zh) | 2012-11-28 |
US9066035B2 (en) | 2015-06-23 |
US20110220889A1 (en) | 2011-09-15 |
JP2012256914A (ja) | 2012-12-27 |
JP2011211182A (ja) | 2011-10-20 |
TWI528539B (zh) | 2016-04-01 |
CN105304661B (zh) | 2018-08-14 |
TW201227940A (en) | 2012-07-01 |
KR101769970B1 (ko) | 2017-08-21 |
US20150279896A1 (en) | 2015-10-01 |
US8766338B2 (en) | 2014-07-01 |
US20140267864A1 (en) | 2014-09-18 |
JP5116897B2 (ja) | 2013-01-09 |
TW201618295A (zh) | 2016-05-16 |
WO2011111529A1 (en) | 2011-09-15 |
CN102804380B (zh) | 2015-11-25 |
KR20130028910A (ko) | 2013-03-20 |
TWI613805B (zh) | 2018-02-01 |
KR20160021909A (ko) | 2016-02-26 |
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