JP5387921B2 - 静電チャック装置及び基板の吸着状態判別方法 - Google Patents
静電チャック装置及び基板の吸着状態判別方法 Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Description
1a :載置面
2 :液体管路
3 :下部絶縁層
4 :吸着電極
5 :上部絶縁層
6 :静電チャック
6a :基板吸着面
7 :熱流束センサ(吸着判別手段)
8 :増幅器
9 :A/D変換器
10 :パソコン
w :基板
図1は、金属基盤1の上面側に静電チャック6を備えた本発明に係る静電チャック装置の断面説明図である。金属基盤1は、アルミニウム、銅、ステンレス等からなり、吸着保持する半導体基板やガラス基板等の基板wの種類やサイズに応じた載置面1aを有する。例えば直径300mmのシリコン基板の吸着に適した金属基盤1は、直径298mm程度の載置面1aを有する。また、金属基盤1には、液体冷媒を流すための液体管路2が形成され、図示外の熱交換器等を経由させながら、外部から供給された液体冷媒を金属基盤内部で巡回させて基板wの冷却を行うことができる。更に金属基盤1には、下面側から供給されたヘリウム等の冷却ガスを静電チャック6に形成した図示外のガス供給孔を通じて基板wの裏面に供給し、基板wを冷却するためのガス供給経路を形成してもよい。なお、金属基盤1の上面側とは、特に断りのない限り基板w側を表し、下面側とは、基板wとは反対側を表す。
図1に示した本発明の静電チャック装置を用いて、イオン注入装置で直径300mmのシリコンウエハwをイオン注入処理した場合にシリコンウエハwの吸着状態を判別した例を以下に説明する。この静電チャック装置は、図3(A)に示したように、直径298mmの載置面1aを有したアルミニウム製金属基盤1の上面側に2箇所熱流束センサ7(米国Vatell Corporation社製:HFM-7E/L)が取り付けられており、いずれもセンサ頂部が載置面1aと面一になるように配設されている。そして、この金属基盤1の載置面1aには、純度99.99%のアルミナ粉末を溶射して形成した直径298mm、膜厚100μmの下部絶縁層3と、直径294mmの2つの半円形が互いに電極間距離2mmで向き合うようにマスクを介して形成された膜厚30μmの吸着電極4と、更に純度99.99%のアルミナ粉末を溶射して形成した直径298mm、膜厚50μmの上部絶縁層5とを有した静電チャック6が積層されている。
図4は、本発明の静電チャック装置に故障診断機能を装備させた例を示す。上記と同様に、イオン注入装置で直径300mmのシリコンウエハwをイオン注入処理し、その間、熱流束センサ7で得られた信号を信号増幅器8によりノイズの影響が出にくい最大10Vオーダーの電圧レベルに上げ、A/D(アナログtoデジタル)変換器9を通してパソコン10に入力させた。パソコン10内での処理の概要は、図5のフローチャートに示したとおりである。増幅された熱流束センサ7からの信号は、パソコン10内のプログラム処理により一定の周期によりサンプリングした。基板wの処理時間は、同じイオン注入装置であっても処理内容によって1秒〜1時間程度の幅があるため、パソコン10が備える磁気ディスクの容量(例えば300GB)を考慮して決めればよい。本実施の形態では最小サンプリング周期を10msに設定した。測定している物理量は熱であるためその変化は比較的遅く、あまり頻繁な計測をする必要はない。
である。ここで、「冷却水の温度(℃)」は『金属基盤に流入する冷却水の温度(℃)であり、「冷却水の熱伝達係数」は『その温度と流速の関数』であり、「静電チャックの熱抵抗(℃・m2/W)」は『液体管路2の上部から基板wの裏面までの総熱抵抗の和』である。また、「平均入射パワー(W/m2)」は熱流束であって『基板wに流入する単位面積当たりの電力』で表され、例えばイオン注入装置では『そのイオンビームの平均ビーム電力』がこれに相当し、プラズマ処理装置では『イオンの平均入射電力+高周波電力』がこれに相当する。
Claims (8)
- 基板を吸着させる静電チャックを金属基盤の上面側に備えた静電チャック装置であり、基板の吸着状態を判別するための吸着判別手段を備えており、前記吸着判別手段が熱流束センサであって、静電チャックを介して伝達される基板からの熱の流れにより基板の吸着状態を判別できることを特徴とする静電チャック装置。
- 熱流束センサが金属基盤側に配設される請求項1に記載の静電チャック装置。
- 熱流束センサが、金属基盤の上面と面一になるように配設される請求項2に記載の静電チャック装置。
- 基板の平面領域に対して複数個所で熱流束を得る請求項1〜3のいずれかに記載の静電チャック装置。
- 基板を吸着させる静電チャックを金属基盤の上面側に備えた静電チャック装置において、基板の吸着状態を判別する方法であって、静電チャックを介して伝達される基板からの熱の流れを熱流束センサで得て、基板の吸着状態を判別することを特徴とする基板の吸着状態判別方法。
- 熱流束センサが金属基盤側に配設される請求項5に記載の基板の吸着状態判別方法。
- 熱流束センサが、金属基盤の上面と面一になるように配設される請求項6に記載の基板の吸着状態判別方法。
- 基板の平面領域に対して複数個所で熱流束を得る請求項5〜7のいずれかに記載の基板の吸着状態判別方法。
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PCT/JP2009/064831 WO2010026893A1 (ja) | 2008-09-04 | 2009-08-26 | 静電チャック装置及び基板の吸着状態判別方法 |
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US (1) | US20110141650A1 (ja) |
EP (1) | EP2362415A4 (ja) |
JP (1) | JP5387921B2 (ja) |
KR (1) | KR20110065484A (ja) |
CN (1) | CN102144285B (ja) |
HK (1) | HK1156149A1 (ja) |
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WO (1) | WO2010026893A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5939808B2 (ja) * | 2012-01-24 | 2016-06-22 | 株式会社アルバック | 基板吸着状態の判定方法 |
JP6043640B2 (ja) * | 2013-01-30 | 2016-12-14 | 株式会社アルバック | 基板吸着検知方法 |
JP6222656B2 (ja) * | 2013-07-25 | 2017-11-01 | 株式会社クリエイティブテクノロジー | センサ一体型吸着チャック及び処理装置 |
US9580806B2 (en) | 2013-08-29 | 2017-02-28 | Applied Materials, Inc. | Method of processing a substrate support assembly |
CN105082717A (zh) * | 2015-09-11 | 2015-11-25 | 武汉华星光电技术有限公司 | 真空贴合设备与基板贴合方法 |
JP6519802B2 (ja) * | 2016-03-18 | 2019-05-29 | パナソニックIpマネジメント株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP7087376B2 (ja) * | 2017-12-21 | 2022-06-21 | 株式会社デンソー | 熱交換器の異常検出装置 |
CN108527002B (zh) * | 2018-04-27 | 2020-04-07 | 上海理工大学 | 一种数控机床主轴生热量内置式检测*** |
KR20220004893A (ko) * | 2020-07-03 | 2022-01-12 | 삼성디스플레이 주식회사 | 표시 장치의 제조 장치 및 표시 장치의 제조 방법 |
DE102020007791A1 (de) * | 2020-12-18 | 2022-06-23 | Att Advanced Temperature Test Systems Gmbh | Modulares Wafer-Chuck-System |
JP2022120418A (ja) * | 2021-02-05 | 2022-08-18 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム及び異常検知方法 |
KR20240090845A (ko) * | 2021-10-28 | 2024-06-21 | 엔테그리스, 아이엔씨. | 유전체 층을 포함하는 상부 세라믹 층을 포함하는 정전 척, 및 관련 방법 및 구조 |
CN113990727B (zh) * | 2021-12-24 | 2022-03-15 | 北京凯世通半导体有限公司 | 一种超低温晶圆注入平台 |
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- 2009-08-26 WO PCT/JP2009/064831 patent/WO2010026893A1/ja active Application Filing
- 2009-08-26 JP JP2010527756A patent/JP5387921B2/ja not_active Expired - Fee Related
- 2009-08-26 US US13/060,237 patent/US20110141650A1/en not_active Abandoned
- 2009-08-26 CN CN200980134448XA patent/CN102144285B/zh not_active Expired - Fee Related
- 2009-08-26 KR KR1020117007349A patent/KR20110065484A/ko not_active Application Discontinuation
- 2009-09-02 TW TW098129532A patent/TW201027662A/zh unknown
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2011
- 2011-10-03 HK HK11110405.5A patent/HK1156149A1/xx not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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CN102144285B (zh) | 2013-01-02 |
CN102144285A (zh) | 2011-08-03 |
HK1156149A1 (en) | 2012-06-01 |
US20110141650A1 (en) | 2011-06-16 |
KR20110065484A (ko) | 2011-06-15 |
TW201027662A (en) | 2010-07-16 |
WO2010026893A1 (ja) | 2010-03-11 |
EP2362415A4 (en) | 2012-05-30 |
EP2362415A1 (en) | 2011-08-31 |
JPWO2010026893A1 (ja) | 2012-02-02 |
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