JP5352376B2 - 半導体材料の単結晶を製造する方法 - Google Patents
半導体材料の単結晶を製造する方法 Download PDFInfo
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- JP5352376B2 JP5352376B2 JP2009184112A JP2009184112A JP5352376B2 JP 5352376 B2 JP5352376 B2 JP 5352376B2 JP 2009184112 A JP2009184112 A JP 2009184112A JP 2009184112 A JP2009184112 A JP 2009184112A JP 5352376 B2 JP5352376 B2 JP 5352376B2
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
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- C—CHEMISTRY; METALLURGY
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
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- C—CHEMISTRY; METALLURGY
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
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- C—CHEMISTRY; METALLURGY
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記顆粒物を前記皿上で溶融させるための第1の誘導加熱コイル;
溶融した顆粒物から形成される融液にエネルギーを伝達するための第2の誘導加熱コイル、前記第2の誘導加熱コイルはその中央に前記融液用の貫通開口部を有する;及び
前記融液の融液ネックと流出管とが接触する範囲にガスを制御して供給するための装置。
Claims (5)
- 半導体材料の顆粒物を第1の誘導加熱コイルにより、前記半導体材料からなる流出管を備えた皿上で溶融させ、
溶融した顆粒物の、融液ネック部及び融液肩部の形で前記流出管から相界面にまで延びる融液を形成させ、
前記融液ネック部が貫通する開口部を有する第2の誘導加熱コイルにより前記融液に熱を供給し、及び
前記相界面で前記融液を結晶化することを有する、半導体材料の単結晶を製造する方法において、前記流出管と前記融液ネック部との間の界面の軸方向位置を制御するために、体積流の制御された冷却ガスを前記流出管及び前記溶融ネック部に向かって供給して、前記界面が上限位置よりも上方に変位した場合には前記体積流を増加させて前記界面を下方に変位させ、前記界面が下限位置よりも下方に変位した場合には前記体積流を減少させて前記界面を上方に変位させる、半導体材料の単結晶を製造する方法。 - 前記第2の誘導加熱コイルの中央部から前記上限位置および前記下限位置までの距離は10mm以下である、請求項1記載の方法。
- 前記界面の軸方向位置を、軸方向で第2の誘導加熱コイルを前記融液ネック部に向かって移動させることにより変更する、請求項1又は請求項2記載の方法。
- 半導体材料からなる顆粒物を収容するための皿を備え、前記皿はその中央に開口部を有し、前記開口部は流出管につながっており、
前記顆粒物を前記皿上で溶融させるための第1の誘導加熱コイルと、
溶融した顆粒物から形成される融液にエネルギーを伝達するための第2の誘導加熱コイルとをさらに備え、前記第2の誘導加熱コイルはその中央に前記融液用の貫通開口部を有し、
前記融液の融液ネックと前記流出管との間の界面の領域にガスを制御して供給するための装置をさらに備え、前記装置は、前記ガスの体積流を制御し、前記界面が上限位置よりも上方に変位した場合には前記体積流を増加させて前記界面を下方に変位させ、前記界面が下限位置よりも下方に変位した場合には前記体積流を減少させて前記界面を上方に変位させるように前記界面の軸方向位置を制御し、
前記装置は、カメラ、制御装置及びノズルを備える、半導体材料の単結晶を製造する装置。 - 前記第2の誘導加熱コイルの中央部から前記上限位置および前記下限位置までの距離は10mm以下である、請求項4記載の装置。
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DE102008038810.6 | 2008-08-13 | ||
DE102008038810A DE102008038810B4 (de) | 2008-08-13 | 2008-08-13 | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Halbleitermaterial |
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JP2010042988A JP2010042988A (ja) | 2010-02-25 |
JP5352376B2 true JP5352376B2 (ja) | 2013-11-27 |
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US (2) | US8475592B2 (ja) |
JP (1) | JP5352376B2 (ja) |
KR (1) | KR101132877B1 (ja) |
CN (1) | CN101649485B (ja) |
DE (1) | DE102008038810B4 (ja) |
DK (1) | DK177332B1 (ja) |
SG (2) | SG159442A1 (ja) |
TW (1) | TWI415979B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9664448B2 (en) | 2012-07-30 | 2017-05-30 | Solar World Industries America Inc. | Melting apparatus |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US5133829A (en) * | 1991-01-08 | 1992-07-28 | Sematech, Inc. | Single wafer regrowth of silicon |
US5217565A (en) * | 1991-11-13 | 1993-06-08 | Wisconsin Alumni Research Foundation | Contactless heater floating zone refining and crystal growth |
JP3127981B2 (ja) * | 1995-01-31 | 2001-01-29 | 信越半導体株式会社 | 高周波誘導加熱装置 |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
JP3601280B2 (ja) * | 1997-12-25 | 2004-12-15 | 信越半導体株式会社 | Fz法による半導体単結晶の製造方法 |
JPH11292682A (ja) * | 1998-04-02 | 1999-10-26 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法および製造装置 |
US6942730B2 (en) * | 2001-11-02 | 2005-09-13 | H. C. Materials Corporation | Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals |
DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
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- 2008-08-13 DE DE102008038810A patent/DE102008038810B4/de not_active Expired - Fee Related
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- 2009-07-13 SG SG200904734-1A patent/SG159442A1/en unknown
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- 2009-07-23 KR KR1020090067277A patent/KR101132877B1/ko active IP Right Grant
- 2009-07-30 DK DKPA200900904A patent/DK177332B1/da not_active IP Right Cessation
- 2009-08-07 JP JP2009184112A patent/JP5352376B2/ja not_active Expired - Fee Related
- 2009-08-11 US US12/539,011 patent/US8475592B2/en not_active Expired - Fee Related
- 2009-08-12 TW TW098127086A patent/TWI415979B/zh not_active IP Right Cessation
- 2009-08-13 CN CN2009101657679A patent/CN101649485B/zh not_active Expired - Fee Related
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Publication number | Publication date |
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US20100037815A1 (en) | 2010-02-18 |
SG159442A1 (en) | 2010-03-30 |
TWI415979B (zh) | 2013-11-21 |
KR20100020898A (ko) | 2010-02-23 |
US8475592B2 (en) | 2013-07-02 |
DK177332B1 (da) | 2013-01-21 |
DE102008038810B4 (de) | 2012-03-01 |
US8580033B2 (en) | 2013-11-12 |
JP2010042988A (ja) | 2010-02-25 |
KR101132877B1 (ko) | 2012-04-03 |
US20130192518A1 (en) | 2013-08-01 |
DE102008038810A1 (de) | 2010-02-25 |
SG178724A1 (en) | 2012-03-29 |
DK200900904A (da) | 2010-02-14 |
CN101649485A (zh) | 2010-02-17 |
TW201006970A (en) | 2010-02-16 |
CN101649485B (zh) | 2013-07-31 |
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