JP5183719B2 - 粒体の包囲溶融によりシリコンから単結晶を製作するための方法 - Google Patents
粒体の包囲溶融によりシリコンから単結晶を製作するための方法 Download PDFInfo
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- JP5183719B2 JP5183719B2 JP2010253104A JP2010253104A JP5183719B2 JP 5183719 B2 JP5183719 B2 JP 5183719B2 JP 2010253104 A JP2010253104 A JP 2010253104A JP 2010253104 A JP2010253104 A JP 2010253104A JP 5183719 B2 JP5183719 B2 JP 5183719B2
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- Prior art keywords
- silicon
- plate
- single crystal
- induction heating
- heating coil
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Description
直径100mmの、シリコンから成る複数の単結晶が、粒体の包囲溶融によって製造された。以下の表は、円錐形の管の管端部の外径に関連して、円錐形に拡張された区分の直径が15mmに到達してから直径30mmに到達するまでの時間内で1つの単結晶を成功裏に製作するために必要とした、平均的な被着試験の回数を示したものである。
Claims (2)
- 粒体の包囲溶融によりシリコンから単結晶を製作するための方法において、シリコン製の回転プレートの下位に配置された誘導加熱コイルにより、単結晶の円錐形に拡張された区分を結晶化させ、誘導溶融されたシリコンを、前記プレートの中央開口を取り囲んでおり且つ前記プレートの下方に延びる前記プレートの円錐形の管を通して、単結晶の円錐形に拡張された区分上に位置し且つ円錐形の管の管端部に接触している溶融物に供給し、しかも、単結晶の円錐形に拡張された区分が15〜30mmの直径を有して結晶化される限りは、前記管端部の外径が15mmを下回らないように、前記プレートの下位に配置された誘導加熱コイルによって十分なエネルギを供給することを特徴とする、粒体の包囲溶融によりシリコンから単結晶を製作するための方法。
- 前記プレートの下位に配置された誘導加熱コイルによって十分なエネルギを供給して、単結晶の円錐形に拡張された区分が15〜30mmの直径を有して結晶化される限りは、前記管端部の外径と、前記誘導加熱コイルの内孔の直径との比が1:3又はそれ以上であるようにする、請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009052745.1 | 2009-11-11 | ||
DE102009052745A DE102009052745A1 (de) | 2009-11-11 | 2009-11-11 | Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011102234A JP2011102234A (ja) | 2011-05-26 |
JP5183719B2 true JP5183719B2 (ja) | 2013-04-17 |
Family
ID=43128203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010253104A Expired - Fee Related JP5183719B2 (ja) | 2009-11-11 | 2010-11-11 | 粒体の包囲溶融によりシリコンから単結晶を製作するための方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8834627B2 (ja) |
EP (1) | EP2322695B1 (ja) |
JP (1) | JP5183719B2 (ja) |
KR (1) | KR101294453B1 (ja) |
CN (1) | CN102061512B (ja) |
AT (1) | ATE534758T1 (ja) |
DE (1) | DE102009052745A1 (ja) |
DK (1) | DK2322695T3 (ja) |
SG (2) | SG171511A1 (ja) |
TW (1) | TWI424101B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012215677B3 (de) | 2012-09-04 | 2013-10-10 | Siltronic Ag | Verfahren zum Herstellen eines Einkristalls aus Silizium |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102017202420A1 (de) * | 2017-02-15 | 2018-08-16 | Siltronic Ag | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
JP3053958B2 (ja) * | 1992-04-10 | 2000-06-19 | 光弘 丸山 | 浮遊帯溶融法による結晶の製造装置 |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
JP3644227B2 (ja) | 1997-12-22 | 2005-04-27 | 信越半導体株式会社 | シリコン単結晶の製造方法及び製造装置 |
JPH11292682A (ja) * | 1998-04-02 | 1999-10-26 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法および製造装置 |
DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
TWM246495U (en) * | 2003-10-31 | 2004-10-11 | Hon Hai Prec Ind Co Ltd | Automatic apparatus for assembling bearig to motor |
DE102008013326B4 (de) * | 2008-03-10 | 2013-03-28 | Siltronic Ag | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
CA2795395C (en) * | 2010-04-13 | 2018-05-29 | Schmid Silicon Technology Gmbh | Production of monocrystalline semiconductor materials |
-
2009
- 2009-11-11 DE DE102009052745A patent/DE102009052745A1/de not_active Withdrawn
-
2010
- 2010-09-15 SG SG201006688-4A patent/SG171511A1/en unknown
- 2010-09-15 SG SG2013024112A patent/SG189726A1/en unknown
- 2010-09-21 CN CN201010294175XA patent/CN102061512B/zh not_active Expired - Fee Related
- 2010-10-20 TW TW099135735A patent/TWI424101B/zh not_active IP Right Cessation
- 2010-10-26 AT AT10188864T patent/ATE534758T1/de active
- 2010-10-26 EP EP10188864A patent/EP2322695B1/de not_active Not-in-force
- 2010-10-26 DK DK10188864.2T patent/DK2322695T3/da active
- 2010-10-28 US US12/913,970 patent/US8834627B2/en not_active Expired - Fee Related
- 2010-11-10 KR KR1020100111530A patent/KR101294453B1/ko active IP Right Grant
- 2010-11-11 JP JP2010253104A patent/JP5183719B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI424101B (zh) | 2014-01-21 |
KR101294453B1 (ko) | 2013-08-07 |
SG189726A1 (en) | 2013-05-31 |
DK2322695T3 (da) | 2012-02-27 |
SG171511A1 (en) | 2011-06-29 |
JP2011102234A (ja) | 2011-05-26 |
US8834627B2 (en) | 2014-09-16 |
ATE534758T1 (de) | 2011-12-15 |
CN102061512A (zh) | 2011-05-18 |
CN102061512B (zh) | 2013-12-11 |
TW201132810A (en) | 2011-10-01 |
EP2322695A1 (de) | 2011-05-18 |
DE102009052745A1 (de) | 2011-05-12 |
KR20110052501A (ko) | 2011-05-18 |
EP2322695B1 (de) | 2011-11-23 |
US20110107960A1 (en) | 2011-05-12 |
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