JP5351384B2 - 純粋シリカゼオライトを機能化及び疎水化するためのuv光照射 - Google Patents
純粋シリカゼオライトを機能化及び疎水化するためのuv光照射 Download PDFInfo
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- JP5351384B2 JP5351384B2 JP2007028068A JP2007028068A JP5351384B2 JP 5351384 B2 JP5351384 B2 JP 5351384B2 JP 2007028068 A JP2007028068 A JP 2007028068A JP 2007028068 A JP2007028068 A JP 2007028068A JP 5351384 B2 JP5351384 B2 JP 5351384B2
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- 239000010457 zeolite Substances 0.000 title claims abstract description 138
- 229910021536 Zeolite Inorganic materials 0.000 title claims abstract description 132
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 title claims description 109
- 235000012239 silicon dioxide Nutrition 0.000 title claims description 33
- 238000000034 method Methods 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 94
- 239000000377 silicon dioxide Substances 0.000 claims description 43
- 239000002159 nanocrystal Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 239000000725 suspension Substances 0.000 claims description 15
- 238000007725 thermal activation Methods 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 8
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 8
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 4
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000003618 dip coating Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000008119 colloidal silica Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- ZANLWQDCQMSYMT-UHFFFAOYSA-M triethyl(propyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CC)(CC)CC ZANLWQDCQMSYMT-UHFFFAOYSA-M 0.000 claims description 2
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 19
- 238000007306 functionalization reaction Methods 0.000 abstract description 14
- 230000002209 hydrophobic effect Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 9
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 238000011282 treatment Methods 0.000 description 26
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 229910002808 Si–O–Si Inorganic materials 0.000 description 10
- 239000011148 porous material Substances 0.000 description 10
- 238000003848 UV Light-Curing Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 7
- 125000005372 silanol group Chemical group 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 229910008051 Si-OH Inorganic materials 0.000 description 4
- 229910006358 Si—OH Inorganic materials 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001187 ellipsometric porosimetry Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011943 nanocatalyst Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002459 porosimetry Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 239000012690 zeolite precursor Substances 0.000 description 1
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- C01B37/00—Compounds having molecular sieve properties but not having base-exchange properties
- C01B37/02—Crystalline silica-polymorphs, e.g. silicalites dealuminated aluminosilicate zeolites
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C01B39/04—Crystalline aluminosilicate zeolites; Isomorphous compounds thereof; Direct preparation thereof; Preparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactants; After-treatment thereof using at least one organic template directing agent, e.g. an ionic quaternary ammonium compound or an aminated compound
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Plasma & Fusion (AREA)
- Thermal Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
ゼオライトフィルムは、いくつかの方法、すなわちその場結晶化、ゼオライト粒子の懸濁液の回転塗布、ゼオライト粒子の懸濁液の浸漬被覆等により析出させてもよい。
当該実施例に対して、シングルウェハUV露光システム装置(アクセリスからのラピッドキュアー(登録商標))を使用した。ブロードバンドスペクトルを有するUV光を放出するマイクロ波駆動非電極型バルブによる露光器を使用した。不活性大気及び大気圧を使用した。上面に純粋シリカ−ゼオライトフィルムを有するウェハ(基板)を、425℃の温度で熱チャック装置上に配置した。露光時間は5分、UV放出のスペクトルは300nm未満である。
合成されたシリカ−ゼオライトフィルムは、約30%のゼオライトナノ結晶(収率)を有する。析出後のシリカ−ゼオライトフィルムの収率は、50〜70nmのオーダーのゼオライトナノ結晶に属するシリカのパーセンテージに相当する。そのため、当該実施例における最終フィルムは、約30%のシリカナノ結晶を有し、残りはアモルファス状のシリカである。このアモルファス相は、シリカナノ結晶、あるいはキルスクホック及び共著により提案されたナノスラブ及び/又はナノタブレットの発生の原因となっているゼオライトシードを含む。
UV処理を行わない当該実施例のフィルムは、トルエンによる偏光解析ポロシメトリーにより測定すると、37.6%の開放された細孔を有する。
本発明に係る、UV硬化処置後のシリカ−ゼオライトフィルム(UV露光の間熱的活性を有している。)は、接触角測定を実行することにより疎水性を評価した。
アモルファス部分を有するゼオライトフィルムは、熱処理によりテンプレートを取り除く間に収縮する。この収縮は、主にナノ結晶中のアモルファス部分に関連する。
Claims (13)
- ゼオライトフィルムの疎水性を改善するための方法であって、
シリカ源及び有機テンプレートを含む純粋シリカゼオライト合成用組成物を準備する工程と、
支持体の上に、上記シリカ源と上記有機テンプレートとを混合することにより作製された純粋シリカゼオライトフィルムを形成する工程と、
上記の形成された純粋シリカゼオライトフィルムに対して、170nm〜250nmの範囲の波長でのUV照射と350℃〜550℃に含まれる温度範囲での熱活性化とを同時に行うことを特徴とする方法。 - 上記ゼオライトフィルムを、その場結晶化プロセスにより上記支持体上に形成することを特徴とする請求項1記載の方法。
- 上記ゼオライトフィルムを、浸漬コーティングプロセスにより上記支持体上に形成することを特徴とする請求項1記載の方法。
- 上記ゼオライトフィルムを、回転塗布プロセスにより上記支持体上に形成することを特徴とする請求項1記載の方法。
- 上記ゼオライトフィルムを形成するため、粒子サイズが50〜70nmであるゼオライトナノ結晶を含む懸濁液を、上記支持体上に塗布することを特徴とする請求項1記載の方法。
- 上記のゼオライトナノ結晶の懸濁液が、さらに、より微小なシリカナノ粒子、若しくは上記のより微小なシリカナノ粒子のクラスターを含むことを特徴とする請求項5記載の方法。
- 上記ゼオライトフィルムが、MFI、MEL、若しくはBEAタイプであることを特徴とする請求項1記載の方法。
- 上記支持体が、基板、ポリマー性支持体、多孔性アルミナ支持体、セラミック支持体からなる群から選択される少なくとも1種であることを特徴とする請求項1記載の方法。
- 上記有機テンプレートは、第四級アンモニウムヒドロキシドを含む有機ヒドロキシドを含有することを特徴とする請求項1〜8のいずれかに記載の方法。
- 上記シリカ源が、テトラエチルオルトシリケート(TEOS)及び/又はテトラメチルオルトシリケート(TMOS)を含む有機系シリカ源、若しくはヒュームドシリカ、シリカゲル、コロイダルシリカを含む無機系シリカ源を含有することを特徴とする請求項1記載の方法。
- 上記有機テンプレートが、テトラプロピルアンモニウムヒドロキシド(TPAOH)、テトラエチルアンモニウムヒドロキシド(TEAOH)、トリエチル−n−プロピルアンモニウムヒドロキシド、及び/又はベンジル−トリメチルアンモニウムヒドロキシドを含む有機系ヒドロキシドを含有することを特徴とする請求項1記載の方法。
- 上記熱活性化のための温度が、425℃であることを特徴とする請求項1記載の方法。
- 上記UV照射及び熱活性化の前に、さらに乾燥工程を含むことを特徴とする請求項1記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
JP4893905B2 (ja) * | 2004-08-31 | 2012-03-07 | 独立行政法人産業技術総合研究所 | ゼオライト用原料液体、ゼオライト結晶作成方法、ゼオライト用原料液体の作成方法、およびゼオライト薄膜 |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US7510982B1 (en) | 2005-01-31 | 2009-03-31 | Novellus Systems, Inc. | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
JP4628257B2 (ja) * | 2005-11-15 | 2011-02-09 | 三井化学株式会社 | 多孔質膜の形成方法 |
JP4641933B2 (ja) * | 2005-11-28 | 2011-03-02 | 三井化学株式会社 | 薄膜形成方法 |
CA2636322C (en) * | 2006-01-16 | 2015-02-24 | Stichting Energieonderzoek Centrum Nederland | Microporous organic-inorganic hybrid silica separation membrane |
US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8242028B1 (en) | 2007-04-03 | 2012-08-14 | Novellus Systems, Inc. | UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
US20100249445A1 (en) * | 2009-03-24 | 2010-09-30 | The Regents Of The University Of California | Post-spin-on silylation method for hydrophobic and hydrofluoric acid-resistant porous silica films |
US8524966B1 (en) | 2012-05-14 | 2013-09-03 | Uop Llc | Catalysts for improved cumene production and method of making and using same |
JP2014086537A (ja) * | 2012-10-23 | 2014-05-12 | Ulvac Japan Ltd | Cu層形成方法及び半導体装置の製造方法 |
JP6999114B2 (ja) * | 2016-02-19 | 2022-02-10 | 日立造船株式会社 | ゼオライト分離膜およびその製造方法 |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
WO2018167956A1 (ja) | 2017-03-17 | 2018-09-20 | 東洋エアゾール工業株式会社 | エアゾール温感組成物及びそれを含むエアゾール製剤 |
CN108033459B (zh) * | 2017-11-28 | 2020-04-24 | 淮阴工学院 | 光诱导自组装合成介孔杂原子分子筛的方法 |
CN110156039B (zh) * | 2019-05-29 | 2020-10-09 | 苏州大学 | 一种高效、快速、绿色的沸石分子筛制备方法 |
CN116282063A (zh) * | 2023-03-31 | 2023-06-23 | 哈尔滨理工大学 | 一种辅助交联剂功能化的纳米沸石颗粒的制备方法 |
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US6284050B1 (en) * | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
WO2002007191A2 (en) | 2000-07-13 | 2002-01-24 | The Regents Of The Universty Of California | Silica zeolite low-k dielectric thin films |
US20030054115A1 (en) * | 2001-09-14 | 2003-03-20 | Ralph Albano | Ultraviolet curing process for porous low-K materials |
US7307343B2 (en) * | 2002-05-30 | 2007-12-11 | Air Products And Chemicals, Inc. | Low dielectric materials and methods for making same |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US6960327B2 (en) * | 2003-01-30 | 2005-11-01 | The Regents Of The University Of California | Methods for removing organic compounds from nano-composite materials |
JP2005154723A (ja) * | 2003-10-30 | 2005-06-16 | Jsr Corp | 絶縁膜形成用組成物、絶縁膜形成用組成物の製造方法、絶縁膜およびその形成方法 |
US7109130B2 (en) * | 2004-05-04 | 2006-09-19 | California Institute Of Technology | Zeolite films for low k applications |
US7977121B2 (en) * | 2006-11-17 | 2011-07-12 | Air Products And Chemicals, Inc. | Method and composition for restoring dielectric properties of porous dielectric materials |
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