JP5350261B2 - プラズマからの非晶質材料の蒸着による勾配付きバンドギャップを有する膜の形成方法 - Google Patents
プラズマからの非晶質材料の蒸着による勾配付きバンドギャップを有する膜の形成方法 Download PDFInfo
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Description
B=2πmf/e (1)
ここでmとeはそれぞれ質量と電子の電荷である。
、p.1133-1136参照)。真性層の軸に沿ってギャップが最小となる領域の位置をずらすとわかるように、バンドギャップの断面形はセルの性能に大きな影響を及ぼしている。勾配の断面形は曲線因子と開路電圧の両方に非常に大きな影響を及ぼす。図12に示すように、非対称v型のp-iインターフェース近くに最小バンドギャップを有するものが最適性能を示すことがわかった。
(i)これらは付加的な再結合中心としての役割を果たし、これにより電子および正孔の寿命を減らし、よってこれらキャリアの分散距離を減少させる。
(ii)これらはセル内でフィールド分布を移動させ、中央での電界を減らし、PIN a-Si:Hセルのpおよびnインターフェースで電界をわずかに増やす。
(i)厚さ100〜150nmの一定の低バンドギャップ(好ましくは1.65eV)層を350°Cで蒸着する。
(ii)蒸着温度を100°C下げ、希釈率(つまり、H2/SiH4)を増やすことにより120〜150nmの間でバンドギャップが約1.8eVに変えられた勾配付きバンドギャップ領域が得られる。
(iii)その後から続くn層と、100〜150nmの一定のバンドギャップ真性層領域がいずれも275°Cで蒸着される。
セル1:一定のシラン流量(90秒の間で100sccm(1.69x10-2Pa・m3/sec))で真性層を蒸着した。
セル2:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、その後シラン流量を15秒毎に10sccm(1.69x10-3Pa・m3/sec)ずつ、30sccm(5.07x10-3Pa・m3/sec)まで減少させた(つまり、総蒸着時間は120秒)。
セル3:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、その後シラン流量を20秒毎に10sccm(1.69x10-3Pa・m3/sec)ずつ、30sccm(5.07x10-3Pa・m3/sec)まで減少させた(つまり、総蒸着時間は160秒)。
従って、セル2および3は本発明による勾配を付けたが、セル1は本発明による勾配を付けなかった。
セル5:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、シラン流動速度を10sccm(1.69x10-3Pa・m3/sec)ずつ減少させた。
セル6:真性層はセル5と同じであるが100sccm(1.69x10-2Pa・m3/sec)での初期ステップをより長くした。
セル7:真性層はセル5と同じであるが100sccm(1.69x10-2Pa・m3/sec)での初期ステップをより短くした。
Claims (13)
- 容器内に基板を配置することと、
ある流動速度で膜用前駆ガスを前記容器内に連続して導入することと、
前記容器内を低圧にすべく前記容器から未反応および解離ガスを抽出することと、
分散型電子サイクロトロン共鳴(DECR)によりプラズマを前記容器内で生成すべく前記プラズマから材料を前記基板上に蒸着するために前記容器内のガスにマイクロ波エネルギーを導入すること
を備えるプラズマからの蒸着により基板上に非晶質材料の膜を形成する方法であって、
前記蒸着した材料の厚さにわたってバンドギャップを変化させるべく、前記膜用前駆ガスの成分の比率を変化させることなく前記流動速度を材料の蒸着中に変える
方法。 - 前記蒸着した膜が水素化非晶質シリコンである請求項1に記載の方法。
- 前記膜用前駆ガスが水素化珪素を含む請求項2に記載の方法。
- 前記膜用前駆ガスがSiH4を含む請求項3に記載の方法。
- 前記蒸着した膜がアモルファスシリコン合金である請求項1に記載の方法。
- 前記プラズマが二次元ネットワークを形成するように配置した装置で生成されている請求項1から5のいずれかに記載の方法。
- 前記プラズマがマトリックスDECRで生成されている請求項6に記載の方法。
- 各層が先の層よりもより大なるバンドギャップを有する、複数の層を前記基板上に連続蒸着する請求項1から7のいずれかに記載の方法。
- 各層が先の層よりもより小なるバンドギャップを有する、複数の層を前記基板上に連続蒸着する請求項1から7のいずれかに記載の方法。
- 蒸着する第1および最終層の両方から離間した点で前記バンドギャップが最小値を有するように前記各層を蒸着する請求項1から7のいずれかに記載の方法。
- 前記流動速度を無段式に連続して変化させることにより、その厚さの全体または一部を通して前記膜の前記バンドギャップを連続また無段階に変化させる請求項1から7のいずれかに記載の方法。
- 太陽電池の製作方法であって、nドープ材料の基板上に請求項1から11のいずれかに記載の方法で非晶質材料の膜が形成し、pドープ材料層が前記非晶質材料の膜上に形成する方法。
- 太陽電池の製作方法であって、pドープ材料の基板上に請求項1から11のいずれかに記載の方法で非晶質材料の膜が形成し、nドープ材料層が前記非晶質材料の膜上に形成する方法。
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EP06301117A EP1918966A1 (en) | 2006-11-02 | 2006-11-02 | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP06301117.5 | 2006-11-02 | ||
PCT/EP2007/009305 WO2008052705A1 (en) | 2006-11-02 | 2007-10-26 | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
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US (1) | US7964438B2 (ja) |
EP (2) | EP1918966A1 (ja) |
JP (1) | JP5350261B2 (ja) |
KR (1) | KR101484152B1 (ja) |
CN (1) | CN101681784B (ja) |
WO (1) | WO2008052705A1 (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
RU2523773C2 (ru) | 2009-05-13 | 2014-07-20 | СиО2 Медикал Продактс, Инк., | Способ по выделению газа для инспектирования поверхности с покрытием |
WO2013170052A1 (en) | 2012-05-09 | 2013-11-14 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
CN103238219A (zh) * | 2010-11-16 | 2013-08-07 | 东电电子太阳能股份公司 | 用于a-Si单结和多结薄膜硅太阳能电池的改进的a-Si:H吸收层 |
WO2012092051A2 (en) * | 2010-12-31 | 2012-07-05 | Ovshinsky Innovation, Llc | Photovoltaic device structure with primer layer |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
JP6095678B2 (ja) | 2011-11-11 | 2017-03-15 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 薬剤パッケージ用の不動態化、pH保護又は滑性皮膜、被覆プロセス及び装置 |
US9040340B2 (en) * | 2011-11-14 | 2015-05-26 | International Business Machines Corporation | Temperature grading for band gap engineering of photovoltaic devices |
JP6509734B2 (ja) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 皮膜検査方法 |
WO2014078666A1 (en) | 2012-11-16 | 2014-05-22 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
WO2014085348A2 (en) | 2012-11-30 | 2014-06-05 | Sio2 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
US20160017490A1 (en) | 2013-03-15 | 2016-01-21 | Sio2 Medical Products, Inc. | Coating method |
CN104233235B (zh) * | 2013-06-06 | 2018-08-07 | 惠州欧博莱光电技术有限公司 | 在工件上形成光学膜的方法及其设备 |
WO2015148471A1 (en) | 2014-03-28 | 2015-10-01 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
CN110556449A (zh) * | 2018-05-30 | 2019-12-10 | 福建钜能电力有限公司 | 一种长期保持异质结太阳电池和组件性能的装置及方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2083701B (en) * | 1980-09-09 | 1985-09-04 | Energy Conversion Devices Inc | Graded bandgap amorphous semiconductors |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
JPH05314918A (ja) | 1992-05-13 | 1993-11-26 | Nissin Electric Co Ltd | イオン源用マイクロ波アンテナ |
CA2102948C (en) * | 1992-11-16 | 1998-10-27 | Keishi Saito | Photoelectric conversion element and power generation system using the same |
US5686734A (en) * | 1993-01-22 | 1997-11-11 | Canon Kabushiki Kaisha | Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device |
FR2702119B1 (fr) | 1993-02-25 | 1995-07-13 | Metal Process | Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique. |
FR2726729B1 (fr) | 1994-11-04 | 1997-01-31 | Metal Process | Dispositif de production d'un plasma permettant une dissociation entre les zones de propagation et d'absorption des micro-ondes |
JPH1081968A (ja) | 1996-09-03 | 1998-03-31 | Nippon Hoso Kyokai <Nhk> | 非晶質シリコン膜の作製法 |
US6274461B1 (en) * | 1998-08-20 | 2001-08-14 | United Solar Systems Corporation | Method for depositing layers of high quality semiconductor material |
FR2797372B1 (fr) * | 1999-08-04 | 2002-10-25 | Metal Process | Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma |
JP2001332749A (ja) | 2000-05-23 | 2001-11-30 | Canon Inc | 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子 |
DE10139305A1 (de) | 2001-08-07 | 2003-03-06 | Schott Glas | Verbundmaterial aus einem Substratmaterial und einem Barriereschichtmaterial |
US6845734B2 (en) | 2002-04-11 | 2005-01-25 | Micron Technology, Inc. | Deposition apparatuses configured for utilizing phased microwave radiation |
EP1921178A1 (en) | 2006-11-02 | 2008-05-14 | Dow Corning Corporation | Film deposition of amorphous films by electron cyclotron resonance |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
-
2006
- 2006-11-02 EP EP06301117A patent/EP1918966A1/en not_active Withdrawn
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2007
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- 2007-10-26 CN CN2007800407957A patent/CN101681784B/zh not_active Expired - Fee Related
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WO2008052705A1 (en) | 2008-05-08 |
CN101681784B (zh) | 2011-10-19 |
WO2008052705A8 (en) | 2009-10-29 |
JP2010508446A (ja) | 2010-03-18 |
US7964438B2 (en) | 2011-06-21 |
EP2080216A1 (en) | 2009-07-22 |
KR20090092274A (ko) | 2009-08-31 |
KR101484152B1 (ko) | 2015-01-27 |
EP1918966A1 (en) | 2008-05-07 |
US20100062561A1 (en) | 2010-03-11 |
EP2080216B1 (en) | 2015-02-11 |
CN101681784A (zh) | 2010-03-24 |
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