JP2010508674A - 電子サイクロトロン共鳴による非晶質膜の蒸着 - Google Patents
電子サイクロトロン共鳴による非晶質膜の蒸着 Download PDFInfo
- Publication number
- JP2010508674A JP2010508674A JP2009535601A JP2009535601A JP2010508674A JP 2010508674 A JP2010508674 A JP 2010508674A JP 2009535601 A JP2009535601 A JP 2009535601A JP 2009535601 A JP2009535601 A JP 2009535601A JP 2010508674 A JP2010508674 A JP 2010508674A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- substrate
- film
- precursor gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005086 pumping Methods 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 abstract description 16
- 238000007740 vapor deposition Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 62
- 210000002381 plasma Anatomy 0.000 description 43
- 238000000151 deposition Methods 0.000 description 26
- 239000002784 hot electron Substances 0.000 description 11
- 230000005284 excitation Effects 0.000 description 9
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- -1 SiH 4 Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005279 excitation period Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【選択図】図3a
Description
ここでmとeはそれぞれ質量と電子の電荷である。
SiH4/m2(sccm/m2):標準cm3/分でのシランの流動速度(SiH4の注入速度)、分散されたプラズマ源の面積で、つまり、0.0702m2で割ることにより正規化。
滞留時間:容器内での前駆ガスの滞留時間、ミリ秒単位で表す。滞留時間の定義は以下にてより詳細に説明している。
MW/ガス(W/sccm):マイクロ波電力(W単位)、マイクロ波電力を標準cm3/分でのシランの流動速度で割ることにより正規化。
RFバイアス(ボルト):基板への印加バイアス、つまり、印加した高周波バイアス電圧を用いて得られた直流バイアス。
温度(C):℃単位で表す基板の基準温度。サンプル18−24では表面温度を正確に示す。サンプル1−17では基板保持部材の温度を示し、熱的接触が悪いため基板表面温度は基板保持部材よりも50−75℃低いと考えられる。
Pgas(mTorr):mTorr単位で表す容器内のガス圧(1mTorr=0.1333Pa)。
Pplasma(mTorr):mTorr単位で表すプラズマが存在する中でのガス圧。
あらさ(Å):上記の方法により分光偏光解析法を用いて測定したÅ単位で表す蒸着した膜表面のあらさ。
速度(Å/s):秒当たりのÅ(厚さ)で表す膜の蒸着速度。
εi(max):膜の誘電率εのモデル化した虚部の最大値εi(max)であり、材料密度と密接に関連し、Tauc-Lorentzモデルを使用して上述の分光偏光解析法で測定した密度の変化は空隙容量の変化による(εiは波長によって変化するため、最大値を引用しており、最大値は種々の異なる波長で存在できる)。
Eg(eV):上述の分光偏光解析法で測定したeV(電子ボルト)単位での材料バンドギャップ。
C:上述の分光偏光解析法で測定した膜材料のマトリックス不規則係数。
Ld(nm):nm単位で表す少数キャリア分散距離。
IF0:膜の光伝導性と暗伝導度との比率である照度率。
シグマフォト(1/ohm.cm):(ohm.cm)-1単位で表す、未較正だが一定の白色光照明のもとで測定した膜の光伝導性。
−これはより広域波長の入射光の吸収を意味するため、発電用途には小さなバンドギャップが必要である。
−通常、小さなバンドギャップは膜の水素含有量が少ない場合に伴い、膜の安定性にプラスの効果がある。
−この特性は膜密度の間接的な測定値である。値が大きいほど膜密度が高い。
−試験中の動作条件において、プラズマは高マイクロ波出力のシラン・デプレッションモード(depletion mode)で動作し、蒸着速度はシランの流動速度に正比例する。
−バイアスされた膜の電子的品質の尺度である。
−通常、照射中、より優れた材料はより大きな伝導度を示すが、広い電界によって電荷捕獲の効果が消滅する場合もある。
−アモルファス材料の場合、値が大きいほど材料は優れている。
−この場合、層の焼きなましの前に測定され、従って焼きなましによって消えることもある欠陥の存在の影響を受けやすい。
−これは2つに分割した偏光レーザービームでサンプルを照射することからなる。いずれのビームも、平行に分極した場合に干渉格子を生じ、垂直に分極した場合に均一な照射を生じてサンプル内で干渉する。
−同時二極性拡散距離は、格子周期と入射角を変える際に、「干渉」および「均一」照射光伝導性物質の比率から導く。
材料密度
膜密度は、膜の誘電率の虚部の最大値(εi(max))を媒介して測定された。図5に示すように、εi(max)、従って膜密度はガス滞留時間の減少と共に増加する。温度も影響を及ぼし、基板温度を上げると材料密度を高くする傾向がある。しかし、調べた範囲内において、ガス滞留時間が最も重要な役割を果たし、可能な限り高い材料密度を得るためには短い滞留時間がより好ましい。
材料の電気特性は、少数キャリア拡散距離(Ld)等の電荷搬送特性を見ることによりまたは光伝導性を暗伝導性(照度率、IF0と称される)と比較することにより推定できる。図6および7からわかるように、いずれの場合も、これらの特性は実質的にガス滞留時間の影響を受けている。
上述の特性について、面積正規化ガス流動速度とガス滞留時間とは相互作用を示さない。これは、良好な材料品質を得るためにそれぞれを別々に設定できることを意味する。しかし、これは全ての特性について当てはまるわけではないことが判り、いくつかの特性は前駆ガス流動速度および前駆ガス滞留時間の両方と相互依存関係を有する。これは、表面あらさおよびマトリックス不規則性パラメータに関して当てはまる。
Claims (13)
- 定義された容量を有する容器内に基板を配置することと、
ある流動速度で膜用前駆ガスを前記容器内に連続して導入することと、
前記容器内を低圧にすべく前記容器から未反応および解離ガスを抽出することと、
分散型電子サイクロトロン共鳴(DECR)によりプラズマを前記容器内で生成すべく前記プラズマから材料を前記基板上に蒸着するために前記容器内のガスにマイクロ波エネルギーを導入すること
を備えるプラズマからの蒸着により基板上に非晶質材料の膜を形成する方法であって、
前記前駆ガス流動速度を分散したプラズマソースの面積で割ったものとして定義している前記正規化した前駆ガスの流動速度は700sccm/m2以上であり、前記反応装置の前記容量を前記有効前駆ガスポンピング速度で割ったものとして定義している前記ガス滞留時間は30ms以下である
方法。 - 前記蒸着した膜が水素化非晶質シリコンである請求項1に記載の方法。
- 前記膜用前駆ガスが水素化珪素を含む請求項2に記載の方法。
- 前記膜用前駆ガスがSiH4を含む請求項3に記載の方法。
- 前記蒸着された膜がアモルファスシリコン合金である請求項1に記載の方法。
- 前記プラズマが二次元ネットワークを形成するように配置されている装置で生成されている請求項1から5のいずれかに記載の方法。
- 前記プラズマがマトリックスDECRで生成されている請求項6に記載の方法。
- 前記容器内の前記圧力が10-4Paと1Paの間である請求項1から7のいずれかに記載の方法。
- 前記圧力が少なくとも10-2Paである請求項8に記載の方法。
- 前記圧力が2x10-1Pa以下である請求項8または9に記載の方法。
- 無線周波数発生器から前記基板に直流バイアス電圧を印加している請求項1から10のいずれかに記載の方法。
- 前記正規化した前駆ガスの流動速度が少なくとも1000、好ましくは少なくとも1500、より好ましくは2000、さらにより好ましくは2500sccm/m2である請求項1から11のいずれかに記載の方法。
- 前記ガス滞留時間が28msより短い、好ましくは25msより短い、より好ましくは22msより短い請求項1から12のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06301113A EP1921178A1 (en) | 2006-11-02 | 2006-11-02 | Film deposition of amorphous films by electron cyclotron resonance |
PCT/EP2007/009308 WO2008052708A1 (en) | 2006-11-02 | 2007-10-26 | Film deposition of amorphous films by electron cyclotron resonance |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010508674A true JP2010508674A (ja) | 2010-03-18 |
Family
ID=38051511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009535601A Pending JP2010508674A (ja) | 2006-11-02 | 2007-10-26 | 電子サイクロトロン共鳴による非晶質膜の蒸着 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100075065A1 (ja) |
EP (1) | EP1921178A1 (ja) |
JP (1) | JP2010508674A (ja) |
KR (1) | KR20090087460A (ja) |
CN (1) | CN101583737B (ja) |
WO (1) | WO2008052708A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
EP1918966A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
FR3096058B1 (fr) * | 2019-05-15 | 2021-06-11 | Commissariat Energie Atomique | Dispositif de depôt chimique en phase vapeur presentant des zones de depôt reconfigurables |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3197036B2 (ja) * | 1991-11-14 | 2001-08-13 | 鐘淵化学工業株式会社 | 結晶質シリコン薄膜の形成方法 |
CA2102948C (en) * | 1992-11-16 | 1998-10-27 | Keishi Saito | Photoelectric conversion element and power generation system using the same |
FR2702119B1 (fr) * | 1993-02-25 | 1995-07-13 | Metal Process | Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique. |
FR2726729B1 (fr) * | 1994-11-04 | 1997-01-31 | Metal Process | Dispositif de production d'un plasma permettant une dissociation entre les zones de propagation et d'absorption des micro-ondes |
FR2797372B1 (fr) | 1999-08-04 | 2002-10-25 | Metal Process | Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma |
JP2001332749A (ja) * | 2000-05-23 | 2001-11-30 | Canon Inc | 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子 |
DE10139305A1 (de) * | 2001-08-07 | 2003-03-06 | Schott Glas | Verbundmaterial aus einem Substratmaterial und einem Barriereschichtmaterial |
US6845734B2 (en) * | 2002-04-11 | 2005-01-25 | Micron Technology, Inc. | Deposition apparatuses configured for utilizing phased microwave radiation |
-
2006
- 2006-11-02 EP EP06301113A patent/EP1921178A1/en not_active Withdrawn
-
2007
- 2007-10-26 JP JP2009535601A patent/JP2010508674A/ja active Pending
- 2007-10-26 US US12/447,644 patent/US20100075065A1/en not_active Abandoned
- 2007-10-26 WO PCT/EP2007/009308 patent/WO2008052708A1/en active Application Filing
- 2007-10-26 KR KR1020097011241A patent/KR20090087460A/ko not_active Application Discontinuation
- 2007-10-26 CN CN2007800406653A patent/CN101583737B/zh not_active Expired - Fee Related
Non-Patent Citations (3)
Title |
---|
JPN5009015365; DAINEKA D: THE EUROPEAN PHYSICAL JOURNAL,APPLIED PHYSICS V28 N3, 200412, P343-346, EDP SCIENCES * |
JPN5009015414; BULKIN P: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A V20 N2, 200203, P338-343, AMERICAN INSTITUTE OF PHYSICS * |
JPN6012042227; G.Girard,et.al.: 'Matrix Distributed ECR-PECVD for high rate deposition of silica for applications in integrated optic' Proceedings of SPIE vol.4944, 2003, pp.62-71 * |
Also Published As
Publication number | Publication date |
---|---|
CN101583737A (zh) | 2009-11-18 |
EP1921178A1 (en) | 2008-05-14 |
WO2008052708A1 (en) | 2008-05-08 |
KR20090087460A (ko) | 2009-08-17 |
CN101583737B (zh) | 2011-08-03 |
US20100075065A1 (en) | 2010-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5350261B2 (ja) | プラズマからの非晶質材料の蒸着による勾配付きバンドギャップを有する膜の形成方法 | |
KR101488005B1 (ko) | 플라즈마로부터 증착에 의하여 막을 형성하는 방법 및 장치 | |
JP5386360B2 (ja) | 電子サイクロトロン共鳴による勾配付きバンドギャップを有する非晶質膜の蒸着 | |
JP5031844B2 (ja) | 電子サイクロトロン共鳴によるアモルファスシリコン膜の蒸着 | |
JP2010508674A (ja) | 電子サイクロトロン共鳴による非晶質膜の蒸着 | |
JP5350260B2 (ja) | プラズマからの蒸着のための成膜装置 | |
KR20090107017A (ko) | 전자 사이클로트론 공진에 의한 비정질 실리콘 막들의 증착 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100528 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110104 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121114 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121121 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121211 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20121211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130122 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130419 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130426 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130520 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130527 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130621 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130628 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130924 |