JP5337513B2 - Piezoelectric / electrostrictive porcelain composition - Google Patents
Piezoelectric / electrostrictive porcelain composition Download PDFInfo
- Publication number
- JP5337513B2 JP5337513B2 JP2009024825A JP2009024825A JP5337513B2 JP 5337513 B2 JP5337513 B2 JP 5337513B2 JP 2009024825 A JP2009024825 A JP 2009024825A JP 2009024825 A JP2009024825 A JP 2009024825A JP 5337513 B2 JP5337513 B2 JP 5337513B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- site
- abo
- electrostrictive
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
本発明は、圧電／電歪磁器組成物に関する。 The present invention relates to a piezoelectric / electrostrictive porcelain composition.
ディーゼルエンジン用インジェクタ等に用いられる圧電／電歪素子は、コスト面から内層電極にＡｇ／Ｐｄ系の電極が使用される。Ａｇ／Ｐｄ系電極は融点が低いため、圧電／電歪磁器の焼成温度に対して低温化が要求される。具体的には、焼成温度が１０００℃未満で緻密化する圧電／電歪磁器組成物が求められている。これに対して焼結助剤を用いることによる焼成温度の低温化が検討されている。しかし、焼結助剤を用いることによって本来の圧電／電歪特性が低下するという問題があった。 A piezoelectric / electrostrictive element used for an injector for a diesel engine or the like uses an Ag / Pd-based electrode as an inner layer electrode from the viewpoint of cost. Since Ag / Pd-based electrodes have a low melting point, it is required to lower the firing temperature of the piezoelectric / electrostrictive porcelain. Specifically, a piezoelectric / electrostrictive porcelain composition that is densified at a firing temperature of less than 1000 ° C. is required. On the other hand, a reduction in the firing temperature by using a sintering aid has been studied. However, there is a problem that the original piezoelectric / electrostrictive characteristics are lowered by using a sintering aid.
特許文献１では、一般式ｘＢｉＭｅＯ3−ｙＰｂＺｒＯ3−（１−ｘ−ｙ）ＰｂＴｉＯ3 （Ｍｅ：Ｓｃおよび／またはＩｎ）で示される物質が開示されている。また特許文献２ではＡサイトにＢｉを含むペロブスカイト型構造Ｂｉ（Ａｌ，Ｆｅ，Ｍ）Ｏ3 （Ｍ：Ｃｒ、Ｍｎ、Ｃｏ、Ｎｉ、Ｇａ、Ｓｃの少なくとも一つ）でイオン半径に基づいて元素を選択している。これらの組成設計ではイオン半径から算出されるトレランスファクターにより変形しやすくなる可能性があるが、実際にはペロブスカイト構造が合成しにくいため十分な圧電特性が得られない、または緻密性の低さあるいはＢｉ元素の高温での揮発に起因すると考えられる絶縁性能の低さから実用に耐えないことがあった。 Patent Document 1 discloses a substance represented by a general formula xBiMeO 3 —yPbZrO 3 — (1-xy) PbTiO 3 (Me: Sc and / or In). In Patent Document 2, a perovskite structure Bi (Al, Fe, M) O 3 (M: at least one of Cr, Mn, Co, Ni, Ga, Sc) containing Bi at the A site is used based on the ion radius. Is selected. These composition designs may be easily deformed by the tolerance factor calculated from the ionic radius, but in reality, it is difficult to synthesize the perovskite structure, so that sufficient piezoelectric characteristics cannot be obtained, or the denseness is low or In some cases, the Bi element could not be put into practical use due to the low insulation performance that may be attributed to the high-temperature volatilization of the Bi element.
本発明は、このような従来技術の有する問題点に鑑みてなされたものであり、従来に比して低温条件で焼成した場合であっても緻密であるとともに結晶性に優れており、かつ、優れた圧電／電歪特性を示す圧電／電歪磁器組成物を提供することにある。 The present invention has been made in view of such problems of the prior art, is dense and excellent in crystallinity even when fired under low temperature conditions as compared with the prior art, and It is an object of the present invention to provide a piezoelectric / electrostrictive porcelain composition exhibiting excellent piezoelectric / electrostrictive characteristics.
本発明者らは上記課題を達成すべく鋭意検討した結果、低温焼成化のために低融点化が可能なＢｉ化合物を用い、優れた電界誘起ひずみ特性などの圧電／電歪特性を発現させるために、ＢｉをＡサイトとし、ＢサイトがＢ１、Ｂ２の元素（Ｂ１：Ｍｇ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ及び希土類からなる群から選ばれるイオン価数が２価以下の少なくとも１種類以上、Ｂ２：イオン価数が４価以上でＶ、Ｎｂ、Ｔａ、Ｓｂ、Ｍｏ及びＷからなる群から選ばれる少なくとも１種類以上である）からなるＡＢＯ3型化合物（主成分１）として、Ａサイトに少なくともＰｂが含まれるＡＢＯ3型化合物（主成分２）に固溶させることで、上記課題を達成することが可能であることを見出し、発明に至った。 As a result of intensive studies to achieve the above-mentioned problems, the present inventors have used a Bi compound capable of lowering the melting point for low-temperature firing, in order to develop excellent piezoelectric / electrostrictive characteristics such as electric field-induced strain characteristics. In addition, Bi is an A site, and the B site is an element having B1 and B2 (B1: Mg, Cr, Mn, Fe, Co, Ni, Cu, Zn, and an ionic valence selected from the group consisting of rare earths is less than or equal to 2. ABO 3 type compound (main component 1) consisting of at least one or more and B2: at least one selected from the group consisting of V, Nb, Ta, Sb, Mo and W having an ionic valence of 4 or more As a result, the inventors have found that the above-mentioned problem can be achieved by solid solution in an ABO 3 type compound (main component 2) containing at least Pb at the A site, and have led to the invention.
本発明によれば、低温条件で焼成した場合であっても緻密であるとともに結晶性に優れており、かつ、優れた圧電／電歪特性を示す圧電／電歪磁器組成物を提供することができる。 According to the present invention, it is possible to provide a piezoelectric / electrostrictive porcelain composition which is dense and excellent in crystallinity even when fired under low temperature conditions and exhibits excellent piezoelectric / electrostrictive characteristics. it can.
Ｂｉ2Ｏ3に代表されるＢｉ化合物は、低融点材料であることが知られており、焼結助剤や低融点ガラスの原料として用いられる。Ｂｉを主構成元素とするＢｉ系のＡＢＯ3型構造材料として、Ｂｉ1/2Ｎａ1/2ＴｉＯ3、Ｂｉ1/2Ｋ1/2ＴｉＯ3、ＢｉＦｅＯ3が代表的で常圧焼成で合成可能であるが、ＡＢＯ3構造が安定なため圧電／電歪特性に劣る。 Bi compounds typified by Bi 2 O 3 are known to be low melting point materials and are used as sintering aids and raw materials for low melting point glass. Bi 1/2 Na 1/2 TiO 3 , Bi 1/2 K 1/2 TiO 3 , and BiFeO 3 are typical examples of Bi-based ABO 3 type structural materials containing Bi as the main constituent element. Although it is possible, the piezoelectric / electrostrictive characteristics are inferior because the ABO 3 structure is stable.
一方、ＢｉＦｅＯ3を除くＢｉをＡサイトとし、Ｂサイトが３価となる複合ＡＢＯ3型化合物は常圧焼成では不安定のため単相に合成しにくいためＡＢＯ3型構造を維持できないが、ＡＢＯ3型構造を維持できた場合には不安定さに由来する圧電／電歪特性に優れた可能性がある。 On the other hand, a composite ABO 3 type compound in which Bi except for BiFeO 3 is an A site and the B site is trivalent is unstable under normal pressure firing and cannot be synthesized into a single phase, and thus cannot maintain an ABO 3 type structure. If the type 3 structure can be maintained, the piezoelectric / electrostrictive characteristics derived from instability may be excellent.
そこで、Ｐｂ系のＡＢＯ3型化合物を骨格として固溶させることによりＡＢＯ3型構造を維持させることが可能ではないかと考えた。 Therefore, it was thought that it would be possible to maintain the ABO 3 type structure by dissolving a Pb-based ABO 3 type compound as a skeleton.
具体的には、ＡＢＯ3型化合物のイオン半径で規定されるトレランスファクター（式（１））において異なる２種類のＡＢＯ3組み合わせることで、ペロブスカイト構造が変形しやすくすることに着想した。 Specifically, the idea was to make the perovskite structure easily deformable by combining two different types of ABO 3 in the tolerance factor (formula (1)) defined by the ionic radius of the ABO 3 type compound.
そこで、上記設計に基づく種々の組成について検討し、さらにＢサイトに４価以上の高価数イオン主を組み込むことにより絶縁性能にも有効であることがわかった。その結果、本発明によれば、Ｐｂ系圧電／電歪磁器組成物である主成分２に対して、主成分２とトレランスファクターの異なるＢｉをＡサイトとしてＢサイトがＢ１、Ｂ２の元素（Ｂ１：Ｍｇ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ及び希土類からなる群から選ばれるイオン価数が２価以下の少なくとも１種類以上、Ｂ２：イオン価数が４価以上でＶ、Ｎｂ、Ｔａ、Ｓｂ、Ｍｏ及びＷからなる群から選ばれる少なくとも１種類以上である）からなるＡＢＯ3型化合物である主成分１を固溶させることにより、Ｂｉ化合物による低温焼成化に加えて、電界誘起ひずみ特性が向上する効果があることがわかった。 Therefore, various compositions based on the above design were examined, and it was found that the incorporation of a high-valence ion ion having a valence of 4 or more at the B site is also effective in insulation performance. As a result, according to the present invention, with respect to the main component 2 which is a Pb-based piezoelectric / electrostrictive porcelain composition, Bi has a tolerance factor different from that of the main component 2 and the B site is an element of B1 and B2 (B1 : At least one ion valence selected from the group consisting of Mg, Cr, Mn, Fe, Co, Ni, Cu, Zn, and rare earths, B2: an ionic valence of 4 or more and V, Nb , Ta, Sb, by solid solution composed mainly 1 is a ABO 3 type compound consisting of at least one or more than that) is selected from the group consisting of Mo and W, in addition to the low-temperature firing of by Bi compound, an electric field It was found that the induced strain characteristics were improved.
本発明の主成分１として、ＡサイトがＢｉで構成されＡサイトの価数が３価であり、Ｂサイトが３価となるＡＢＯ3、さらに具体的にはＢｉ（Ｎｉ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｍｇ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｚｎ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｃｕ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｆｅ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｍｎ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｃｏ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｃｒ2/3Ｎｂ1/3）Ｏ3、Ｂｉ（Ｎｉ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｍｇ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｚｎ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｃｕ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｆｅ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｍｎ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｃｏ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｃｒ2/3Ｖ1/3）Ｏ3、Ｂｉ（Ｎｉ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｍｇ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｚｎ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｃｕ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｆｅ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｍｎ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｃｏ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｃｒ2/3Ｔａ1/3）Ｏ3、Ｂｉ（Ｍｇ3/4Ｍｏ1/4）Ｏ3、Ｂｉ（Ｎｉ3/4Ｍｏ1/4）Ｏ3、Ｂｉ（Ｚｎ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｃｕ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｆｅ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｍｎ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｍｇ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｎｉ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｚｎ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｃｕ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｆｅ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｍｎ3/4Ｗ1/4）Ｏ3、Ｂｉ（Ｃｕ1/2Ｎｂ1/2）Ｏ3などが挙げられる。なお、主成分１は化学量論換算でＡサイト３価、Ｂサイト３価としているが、特性の微調整のために非化学量論組成としてもよい。 As a main component 1 of the present invention, A-site is the valence trivalent constructed A site Bi, B site trivalent become ABO 3, more specifically Bi (Ni 2/3 Nb 1 / 3 ) O 3 , Bi (Mg 2/3 Nb 1/3 ) O 3 , Bi (Zn 2/3 Nb 1/3 ) O 3 , Bi (Cu 2/3 Nb 1/3 ) O 3 , Bi (Fe 2/3 Nb 1/3 ) O 3 , Bi (Mn 2/3 Nb 1/3 ) O 3 , Bi (Co 2/3 Nb 1/3 ) O 3 , Bi (Cr 2/3 Nb 1/3 ) O 3 , Bi (Ni 2/3 V 1/3 ) O 3 , Bi (Mg 2/3 V 1/3 ) O 3 , Bi (Zn 2/3 V 1/3 ) O 3 , Bi (Cu 2 / 3 V 1/3 ) O 3 , Bi (Fe 2/3 V 1/3 ) O 3 , Bi (Mn 2/3 V 1/3 ) O 3 , Bi (Co 2/3 V 1/3 ) O 3 Bi (Cr 2/3 V 1/3 ) O 3 , Bi (Ni 2/3 Ta 1/3 ) O 3 , Bi (Mg 2/3 Ta 1/3 ) O 3 , Bi (Zn 2/3 Ta 1/3) O 3, Bi (Cu 2/3 T 1/3) O 3, Bi (Fe 2/3 Ta 1/3) O 3, Bi (Mn 2/3 Ta 1/3) O 3, Bi (Co 2/3 Ta 1/3) O 3, Bi (Cr 2/3 Ta 1/3 ) O 3 , Bi (Mg 3/4 Mo 1/4 ) O 3 , Bi (Ni 3/4 Mo 1/4 ) O 3 , Bi (Zn 3/4 W 1 / 4 ) O 3 , Bi (Cu 3/4 W 1/4 ) O 3 , Bi (Fe 3/4 W 1/4 ) O 3 , Bi (Mn 3/4 W 1/4 ) O 3 , Bi (Mg 3/4 W 1/4 ) O 3 , Bi (Ni 3/4 W 1/4 ) O 3 , Bi (Zn 3/4 W 1/4 ) O 3 , Bi (Cu 3/4 W 1/4 ) Examples thereof include O 3 , Bi (Fe 3/4 W 1/4 ) O 3, Bi (Mn 3/4 W 1/4 ) O 3, and Bi (Cu 1/2 Nb 1/2 ) O 3 . The main component 1 is A-site trivalent and B-site trivalent in terms of stoichiometry, but may have a non-stoichiometric composition for fine adjustment of characteristics.
また、主成分２にはＡサイトに少なくともＰｂが含まれるＡＢＯ3型化合物、さらに具体的にはＰＺＴ、Ｐｂ(Ｍｇ、Ｎｂ)Ｏ3−ＰＴ、Ｐｂ（Ｎｉ、Ｎｂ)Ｏ3−ＰＴ、Ｐｂ(Ｚｎ、Ｎｂ)Ｏ3−ＰＴ、Ｐｂ(Ｍｇ、Ｎｂ)Ｏ3−ＰＺＴ、Ｐｂ（Ｎｉ、Ｎｂ)Ｏ3−ＰＺＴ、Ｐｂ(Ｚｎ、Ｎｂ)Ｏ3−ＰＴ、Ｐｂ（Ｙｂ、Ｎｂ）Ｏ3−ＰＺＴ、Ｐｂ（Ｃｏ、Ｎｂ）Ｏ3−ＰＺＴ、（Ｐｂ、Ｓｒ）ＺＴ、ＰＬＺＴなどが挙げられる。 The main component 2 is an ABO 3 type compound containing at least Pb at the A site, more specifically, PZT, Pb (Mg, Nb) O 3 —PT, Pb (Ni, Nb) O 3 —PT, Pb. (Zn, Nb) O 3 -PT , Pb (Mg, Nb) O 3 -PZT, Pb (Ni, Nb) O 3 -PZT, Pb (Zn, Nb) O 3 -PT, Pb (Yb, Nb) O 3 -PZT, Pb (Co, Nb ) O 3 -PZT, (Pb, Sr) ZT, like PLZT, and the like.
なお、基本特性を阻害しない程度の特性の微調整のために種々の副成分を置換・添加してもよい。 Various sub-components may be substituted and added for fine adjustment of the characteristics that do not hinder the basic characteristics.
次に本発明を実施例に基づいて具体的に説明するが、本発明はこれらの実施例に限定されるものではない。なお各種物性値の測定方法を以下に示す。 EXAMPLES Next, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples. In addition, the measuring method of various physical-property values is shown below.
[嵩密度測定] 焼結体（圧電／電歪体）について、アルキメデス法により測定し、ＸＲＤ（Ｘ線回折）から得られる理論密度から相対密度を算出した。 [Bulk Density Measurement] The sintered body (piezoelectric / electrostrictive body) was measured by the Archimedes method, and the relative density was calculated from the theoretical density obtained from XRD (X-ray diffraction).
[結晶構造解析] Ｘ線回折装置を用いて２θ／θスキャンにより焼結体の結晶構造を解析した。また、得られた結晶構造情報から理論密度を計算した。 [Crystal Structure Analysis] The crystal structure of the sintered body was analyzed by 2θ / θ scan using an X-ray diffractometer. The theoretical density was calculated from the obtained crystal structure information.
[微構造観察] 走査型電子顕微鏡により焼結体の表面微構造および、研磨後の内部微構造について観察し、インターセプト法により結晶粒径を測定した。 [Microstructure Observation] The surface microstructure of the sintered body and the internal microstructure after polishing were observed with a scanning electron microscope, and the crystal grain size was measured by the intercept method.
[圧電定数測定] ＪＥＩＴＡ ＥＭ−４５０１にしたがって圧電定数ｄ31を測定した。 [Measurement of Piezoelectric Constant] The piezoelectric constant d 31 was measured according to JEITA EM-4501.
[キュリー点測定] 電気炉とＬＣＲメーターを接続して比誘電率の温度特性を測定し、比誘電率がピークとなる温度をキュリー点とした。 [Curie point measurement] The temperature characteristic of the dielectric constant was measured by connecting an electric furnace and an LCR meter, and the temperature at which the relative dielectric constant peaked was defined as the Curie point.
[電界誘起ひずみ] 電極上にひずみゲージを貼付し、４ｋＶ／ｍｍの電圧を印加した場合における、電界と垂直な方向の歪量を電界誘起ひずみ（ｐｐｍ）として測定した。 [Electric Field Induced Strain] A strain gauge was attached to the electrode, and the amount of strain in the direction perpendicular to the electric field when a voltage of 4 kV / mm was applied was measured as electric field induced strain (ppm).
［実施例１］
原料であるＰｂＯ粉末、Ｂｉ2Ｏ3粉末、ＮｉＯ粉末、Ｎｂ2Ｏ5粉末、ＴｉＯ2粉末、ＺｒＯ2粉末を下記組成（式（２））となるように秤量し、ボールミルを用いて４０時間湿式混合した。
[Example 1]
The raw materials PbO powder, Bi 2 O 3 powder, NiO powder, Nb 2 O 5 powder, TiO 2 powder, and ZrO 2 powder were weighed so as to have the following composition (formula (2)), and then used for 40 hours using a ball mill. Wet mixed.
混合粉を乾燥し、大気中において８００℃で２時間仮焼した。その後、任意の比表面積となるまで湿式ボールミルで粉砕し乾燥した粉末を篩に通して造粒し、一軸加圧機及び静水圧加圧機を用いて円板状に成型し、セラミックスサヤに封入して９５０℃で焼成した。 The mixed powder was dried and calcined at 800 ° C. for 2 hours in the air. After that, the powder that has been pulverized and dried with a wet ball mill until it has an arbitrary specific surface area is passed through a sieve, granulated, molded into a disk using a uniaxial pressurizer and hydrostatic pressurizer, and sealed in a ceramic sheath. Baking at 950 ° C.
焼結体の密度を測定し、微構造及び結晶構造の評価を行った。電気特性評価のために、焼結体を厚さ１ｍｍの短冊状にスライス加工した後、両面にＡｇペーストを塗布、６００℃で焼き付けて電極を形成した。これらを７５℃、２ｋＶ／ｍｍで１５分間分極した後、圧電定数を測定した。また、電界誘起ひずみ特性を測定した。 The density of the sintered body was measured, and the microstructure and crystal structure were evaluated. In order to evaluate electrical characteristics, the sintered body was sliced into a 1 mm thick strip, and then an Ag paste was applied to both sides and baked at 600 ° C. to form electrodes. These were polarized at 75 ° C. and 2 kV / mm for 15 minutes, and then the piezoelectric constant was measured. In addition, electric field induced strain characteristics were measured.
以下に結果を記す。焼結体は相対密度９８％、結晶構造は正方晶ペロブスカイト構造単相であった。また微構造観察から平均粒径は４．７μｍであった。圧電定数ｄ31は１９５ｐｍ／Ｖ、キュリー温度は２２５℃であった。電界誘起ひずみは４ｋＶ／ｍｍ印加時において１２５０ｐｐｍであった。 The results are shown below. The sintered body had a relative density of 98% and the crystal structure was a single phase of a tetragonal perovskite structure. The average particle size was 4.7 μm from the observation of the microstructure. The piezoelectric constant d 31 was 195 pm / V, and the Curie temperature was 225 ° C. The electric field induced strain was 1250 ppm when 4 kV / mm was applied.
［実施例２〜８及び参考例１〜４］
実施例１と同様の製造方法で、表１に示す組成で作製し、実施例１と同様の評価をおこなった。その結果、いずれの場合においても１０００℃以下で緻密化が可能であり、良好な圧電特性が得られた。
[ Examples 2 to 8 and Reference Examples 1 to 4 ]
The same production method as in Example 1 was used to produce the compositions shown in Table 1, and the same evaluation as in Example 1 was performed. As a result, in any case, densification was possible at 1000 ° C. or less, and good piezoelectric characteristics were obtained.
［比較例１〜４］
実施例１と同様の製造方法で、表１に示す組成で作製し、実施例１と同様の評価をおこなった。その結果、合成が不安定でペロブスカイト構造単相が得られなかった、またペロブスカイト構造となった組成でも、密度が低く、良好な圧電特性が得られなかった。
[Comparative Examples 1-4]
The same production method as in Example 1 was used to produce the compositions shown in Table 1, and the same evaluation as in Example 1 was performed. As a result, the synthesis was unstable and a single phase of the perovskite structure was not obtained. Even in the composition having the perovskite structure, the density was low and good piezoelectric characteristics could not be obtained.
［焼成温度に対する相対密度及び４ｋＶ／ｍｍ電界誘起ひずみの変化］
図１及び図２は、それぞれ、実施例１、比較例２及び比較例３と同じ組成を有し、焼成温度を変化させたこと以外は実施例１と同様の製造方法で製造し評価した焼結体について、焼成温度による相対密度及び４ｋＶ／ｍｍ電界誘起ひずみの変化を示す図である。
[Change in relative density and 4 kV / mm electric field induced strain with respect to firing temperature]
1 and 2 have the same composition as Example 1, Comparative Example 2 and Comparative Example 3, respectively, and were manufactured and evaluated by the same manufacturing method as in Example 1 except that the baking temperature was changed. It is a figure which shows the change of the relative density by a calcination temperature, and a 4 kV / mm electric field induced distortion about a joined body.
図１及び図２に示すように、実施例１と同じ組成を有する焼結体は、焼成温度が１０００℃未満の場合でも良好な相対密度及び４ｋＶ／ｍｍ電界誘起ひずみを示すが、比較例２及び比較例３と同じ組成を有する焼結体は、焼成温度が１０００℃以上にならなければ、良好な相対密度及び４ｋＶ／ｍｍ電界誘起ひずみを示さなかった。 As shown in FIGS. 1 and 2, the sintered body having the same composition as in Example 1 shows good relative density and 4 kV / mm electric field induced strain even when the firing temperature is less than 1000 ° C. And the sintered compact which has the same composition as Comparative Example 3 did not show good relative density and 4 kV / mm electric field induced strain unless the firing temperature was 1000 ° C. or higher.
Claims (1)
Ａサイトに少なくともＰｂが含まれるＡＢＯ３型化合物である第２の主成分と、
を含み、組成式ｘＢｉ（Ｎｉ ２／３ Ｎｂ １／３ ）Ｏ ３ −（１−ｘ）Ｐｂ（Ｚｒ １−ｙ Ｔｉ ｙ ）Ｏ ３ で表され、ｘ及びｙが０．２０≦ｘ≦０．２５及び０．６１０≦ｙ≦０．７０５を満たす圧電／電歪磁器組成物。 A first main component which is an ABO 3 type compound in which the A site is composed of Bi, the valence of the A site is trivalent, the B site is made of Ni and Nb , and the valence of the B site is trivalent;
A second main component which is an ABO 3 type compound containing at least Pb at the A site;
Only containing the composition formula xBi (Ni 2/3 Nb 1/3) O 3 - (1-x) is represented by Pb (Zr 1-y Ti y ) O 3, x and y are 0.20 ≦ x ≦ Piezoelectric / electrostrictive porcelain composition satisfying 0.25 and 0.610 ≦ y ≦ 0.705.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/404,598 US8871111B2 (en) | 2008-03-18 | 2009-03-16 | Piezoelectric/electrostrictive ceramic composition |
| EP09250744A EP2103581A3 (en) | 2008-03-18 | 2009-03-17 | Piezoelectric/electrostrictiven ceramic composition |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3737208P | 2008-03-18 | 2008-03-18 | |
| US61/037,372 | 2008-03-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009221096A JP2009221096A (en) | 2009-10-01 |
| JP5337513B2 true JP5337513B2 (en) | 2013-11-06 |
Family
ID=41191902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009024825A Active JP5337513B2 (en) | 2008-03-18 | 2009-02-05 | Piezoelectric / electrostrictive porcelain composition |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5337513B2 (en) |
| CN (1) | CN101544494A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2833425A4 (en) | 2012-03-30 | 2015-10-21 | Ngk Insulators Ltd | Piezoelectric/electrostrictive film type element and method for producing piezoelectric/electrostrictive film type element |
| JPWO2013146975A1 (en) | 2012-03-30 | 2015-12-14 | 日本碍子株式会社 | Piezoelectric / electrostrictive membrane element and method for manufacturing piezoelectric / electrostrictive membrane element |
| CN104529442B (en) * | 2015-01-16 | 2017-02-22 | 河南理工大学 | Non-pressure infiltration preparation process of functionally graded piezoelectric material (FGPM) |
| JP6445372B2 (en) * | 2015-03-31 | 2018-12-26 | 日本碍子株式会社 | Piezoelectric / electrostrictive material, piezoelectric / electrostrictive body, and resonance driving device |
| JP7363535B2 (en) * | 2019-03-15 | 2023-10-18 | Tdk株式会社 | Dielectric compositions and electronic components |
| CN110498603B (en) * | 2019-09-25 | 2021-11-23 | 山东国瓷功能材料股份有限公司 | Glass powder and preparation method thereof, piezoelectric ceramic and preparation method thereof, and piezoelectric ceramic device |
| CN111592352A (en) * | 2020-03-29 | 2020-08-28 | 成都迪迈斯科技有限公司 | High-performance potassium sodium niobate series lead-free electrostrictive ceramic and preparation and application thereof |
| CN111875374A (en) * | 2020-08-06 | 2020-11-03 | 湖北大学 | Low-temperature sintered niobium-nickel-lead zirconate titanate piezoelectric ceramic material and preparation method thereof |
| CN117049877B (en) * | 2023-10-12 | 2024-01-09 | 佛山仙湖实验室 | Electrostriction ceramic, preparation method thereof and electrostriction device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4814839B1 (en) * | 1969-11-20 | 1973-05-10 | ||
| JPS4812717B1 (en) * | 1969-11-20 | 1973-04-23 | ||
| JPS5626994B2 (en) * | 1973-09-10 | 1981-06-22 | ||
| JPS60215568A (en) * | 1984-04-09 | 1985-10-28 | 財団法人 小林理学研究所 | High dielectric ceramic composition |
| JPS6289372A (en) * | 1985-10-16 | 1987-04-23 | Seiko Epson Corp | Piezoelectric porcelain |
| JP3487068B2 (en) * | 1995-04-03 | 2004-01-13 | セイコーエプソン株式会社 | Piezoelectric thin film, method of manufacturing the same, and ink jet recording head using the same |
| JP2000178068A (en) * | 1998-12-17 | 2000-06-27 | Matsushita Electric Ind Co Ltd | Piezoelectric porcelain composition |
| JP2001328864A (en) * | 2000-05-16 | 2001-11-27 | Matsushita Electric Ind Co Ltd | Low-temperature bakeable piezoelectric porcelain composition and piezoelectric transformer |
| JP4749065B2 (en) * | 2004-08-25 | 2011-08-17 | 日本碍子株式会社 | Electron emitter |
| JP2006188414A (en) * | 2004-12-07 | 2006-07-20 | Murata Mfg Co Ltd | Piezoelectric ceramic composition and piezoelectric ceramic electronic component |
| CN101189743B (en) * | 2005-06-03 | 2011-04-13 | 株式会社村田制作所 | Piezoelectric element |
| JP5290551B2 (en) * | 2006-09-15 | 2013-09-18 | 富士フイルム株式会社 | Perovskite oxide and method for producing the same, piezoelectric body, piezoelectric element, and liquid ejection device |
| KR101051527B1 (en) * | 2007-02-07 | 2011-07-22 | 가부시키가이샤 무라타 세이사쿠쇼 | Piezoelectric Magnetic and Piezoelectric Elements |
-
2009
- 2009-02-05 JP JP2009024825A patent/JP5337513B2/en active Active
- 2009-03-16 CN CNA2009101265988A patent/CN101544494A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN101544494A (en) | 2009-09-30 |
| JP2009221096A (en) | 2009-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5337513B2 (en) | Piezoelectric / electrostrictive porcelain composition | |
| US7754095B2 (en) | Piezoelectric ceramic composition and piezoelectric ceramic electronic component | |
| US8034250B2 (en) | Piezoelectric material | |
| US7585429B2 (en) | Piezoelectric ceramic composition | |
| JP5576365B2 (en) | Piezoelectric ceramics, manufacturing method thereof, and piezoelectric device | |
| JP5214373B2 (en) | Piezoelectric ceramics, manufacturing method thereof, and piezoelectric device | |
| KR101812507B1 (en) | Ceramic | |
| US10340441B2 (en) | Lead-free piezoelectric ceramic composition, piezoelectric element using the same, and method of manufacturing lead-free piezoelectric ceramic composition | |
| US9105845B2 (en) | Piezoelectric ceramic comprising an oxide and piezoelectric device | |
| US8871111B2 (en) | Piezoelectric/electrostrictive ceramic composition | |
| KR100843067B1 (en) | Piezoelectric ceramic composition and piezoelectric actuator | |
| EP1358137A2 (en) | Method for making lead zirconate titanate-based ceramic powder, piezoelectric ceramic and method for making same | |
| JP2004075448A (en) | Piezoelectric ceramic composition, method of manufacturing piezoelectric ceramic composition and piezoelectric ceramic part | |
| JP2011088786A (en) | Piezoelectric ceramic | |
| JP2000272962A (en) | Piezoelectric ceramic composition | |
| EP4322233A1 (en) | Lead-free piezoelectric porcelain composition and piezoelectric element | |
| JP5898032B2 (en) | Piezoelectric ceramic and piezoelectric element using the same | |
| JP6105777B2 (en) | Piezoelectric ceramic and piezoelectric element using the same | |
| JP5894222B2 (en) | Multilayer electronic component and manufacturing method thereof | |
| JP2014129215A (en) | Piezoelectric ceramic and piezoelectric element using the same | |
| WO2024070849A1 (en) | Lead-free piezoelectric composition and piezoelectric element | |
| WO2024070625A1 (en) | Lead-free piezoelectric composition and piezoelectric element | |
| WO2023026614A1 (en) | Lead-free piezoelectric magnetic composition and piezoelectric element | |
| KR102069360B1 (en) | Lead-free piezoceramics composition and manufacturing the same | |
| JP2003012369A (en) | Piezoelectric compact of ceramic composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111124 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130131 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130403 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130408 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130507 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130507 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130627 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130805 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5337513 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |