JP5337404B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Description
WLCSPが適用された半導体装置は、図4に示すように、半導体チップ101と、半導体チップ101の表面を覆うパッシベーション膜102と、パッシベーション膜102上に積層されたポリイミド層103と、ポリイミド層103上に形成された再配線104と、ポリイミド層103および再配線104上に積層された封止樹脂層105と、封止樹脂層105上に配置された半田ボール106とを備えている。パッシベーション膜102には、内部配線の一部を電極パッド107として露出させるためのパッド開口108が形成されている。再配線104は、ポリイミド層103に貫通して形成された貫通孔109を介して、その電極パッド107に接続されている。また、再配線104は、封止樹脂層105を貫通するポスト110を介して、半田ボール106と接続されている。この半導体装置は、半田ボール106が実装基板上のパッドに接続されることによって、実装基板への実装(実装基板に対する電気的および機械的な接続)が達成される。
この構成によれば、半導体チップ上に積層された封止樹脂層には、貫通孔が層厚方向に貫通して形成されている。貫通孔内には、ポストが設けられている。このポストの先端面は、半球状をなし、角部を有していない。そのため、ポストの先端面上に配置される外部接続端子がポストから応力を集中的に受けることがない。よって、外部接続端子にポストからの応力集中による損傷が生じることを防止できる。また、外部接続端子とポストとの接続面が半球状となるので、外部接続端子とポストとの接続面が平坦面である構造と比較して、ポストの径方向(外部接続端子とポストとの対向方向と直交する方向)における外部接続端子とポストとの接続強度が向上する。
請求項3に記載のように、前記基部は、前記貫通孔内に埋没し、前記先端部との接続面が前記封止樹脂層の表面よりも前記半導体チップ側に配置される高さに形成されていることが好ましい。この構造では、基部の側面は、封止樹脂層に覆われることにより露出しない。そのため、基部が銅などの酸化されやすい金属材料からなる場合にも、基部の表面に酸化膜が形成されるおそれがない。また、基部の上方で貫通孔の内面が露出し、貫通孔の内面と先端部(ポスト)の先端面との間に隙間が生じるので、先端部上に配置される外部接続端子は、その隙間に入り込み、貫通孔の内面と先端部の先端面との間に挟持された状態となる。その結果、外部接続端子とポストとの接続強度がさらに向上する。
請求項5に記載のように、前記第2の金属材料は、前記第1の金属材料よりも融点が低いことが好ましい。この場合、半導体装置の製造方法として、たとえば、請求項7に記載の製造方法が採用されることが好ましい。請求項7に記載の製造方法は、半導体チップ上に、第1の金属材料からなる基部および前記第1の金属材料よりも低い融点を有する第2の金属材料からなる先端部を積み重ねた構造のポストを形成するポスト形成工程と、前記半導体チップ上に、前記ポストを埋没させるように封止樹脂層を形成する封止樹脂層形成工程と、前記封止樹脂層を前記第2金属層の表面が露出するまで研削する研削工程と、前記研削工程後、前記先端部に対する熱処理により、前記先端部を一旦溶融させた後に凝固させる熱処理工程とを含む。
また、前記ポストが前記封止樹脂層の表面から突出していれば、ポスト上に外部接続端子を設けなくても、実装基板のパッドに対してポストを直接に接続することにより、半導体装置の実装基板への実装(電気的および機械的な接続)を達成することができる。
図1は、本発明の一実施形態に係る半導体装置の模式的な断面図である。
半導体装置1は、WLCSPが適用された半導体装置であり、半導体チップ2と、半導体チップ2の表面(機能素子が形成されている側の面)を被覆するパッシベーション膜(表面保護膜)3と、パッシベーション膜3上に形成された複数の再配線4と、パッシベーション膜3上に積層された封止樹脂層5と、各再配線4上に設けられ、封止樹脂層5を貫通するポスト6と、各ポスト6の先端部上に配置された外部接続端子としての金属ボール7とを備えている。
パッシベーション膜3は、たとえば、酸化シリコンまたは窒化シリコンからなる。このパッシベーション膜3には、半導体チップ1に作り込まれた機能素子と電気的に接続された内部配線の一部を電極パッド8として露出させるための複数のパッド開口9が形成されている。
封止樹脂層5は、たとえば、エポキシ樹脂からなる。封止樹脂層5は、パッシベーション膜3および再配線4の表面を覆い、半導体装置1(半導体チップ2)の表面側を封止している。そして、封止樹脂層5は、表面が平坦面に形成されるとともに、その側面が半導体チップ2の側面と面一に形成されている。これにより、半導体装置1は、平面視において、半導体チップ2のサイズと等しい外形サイズ(パッケージサイズ)を有している。また、封止樹脂層5には、各再配線4の先端部上において、円筒状の内面10aを有する貫通孔10が層厚方向に貫通して形成されている。
ポスト6は、各貫通孔10内に設けられている。ポスト6の基端は、再配線4に接続されている。ポスト6の先端は、封止樹脂層5の表面に対して少し突出している。
より具体的には、ポスト6は、再配線4上に形成された基部11と、基部11上に形成された先端部12とを一体的に有している。
先端部12は、第2の金属材料としての錫からなり、中央部が周縁部に対して盛り上がった略半球状に形成されている。これにより、先端部12の表面13は、略半球状をなし、ポスト6の先端面13となっている。そして、先端面13は、その頂部(中央部)が封止樹脂層5の表面に対して突出し、周縁部が封止樹脂層5の表面よりも半導体チップ2側に配置されている。そのため、基部11の上方において、貫通孔10の内面10aが露出し、この内面10aと先端面13との間に隙間が生じている。
半導体装置1の製造は、半導体チップ2が個片に切り分けられる前のウエハの状態で進められる。半導体チップ2(ウエハ)の表面は、パッシベーション膜3により被覆されている。
まず、図3Aに示すように、フォトリソグラフィおよびエッチングにより、パッシベーション膜3に、複数のパッド開口9が形成される。次に、パッシベーション膜3および各パッド開口9から露出する電極パッド8上に、再配線4の材料からなるめっき層が形成され、フォトリソグラフィおよびエッチングにより、そのめっき層が複数の再配線4にパターニングされる。その後、各再配線4上に、ポスト6が形成される。ポスト6は、たとえば、パッシベーション膜3および再配線4上に、ポスト6が形成される部分に対応する開口を有するマスクを形成した後、そのマスクの開口内に、基部11の材料である銅および先端部12の材料である錫を連続的にめっき成長させ、その後、マスクを除去することによって形成することができる。また、ポスト6は、パッシベーション膜3および再配線4上に、基部11の材料である銅および先端部12の材料である錫を連続的にめっき成長させることにより、積層金属膜(図示せず)を形成し、その後、フォトリソグラフィおよびエッチングにより、積層金属膜を選択的に除去することによって形成することもできる。
そして、その樹脂の硬化後に、樹脂(封止樹脂層5)の表面がグラインダで研削されて、図3Cに示すように、ポスト6の先端部12の先端面(先端面)が封止樹脂層5から露出される。このとき、先端部12の材料である錫が、その延性のために、グラインダにつられて、封止樹脂層5の表面における貫通孔10の周囲にだれる。
以上のように、半導体チップ2上に積層された封止樹脂層5には、貫通孔10が層厚方向に貫通して形成されている。貫通孔10内には、ポスト6が設けられている。このポスト6の先端面13は、半球状をなし、角部を有していない。そのため、ポスト6の先端面13上に配置される金属ボール7がポスト6から応力を集中的に受けることがない。よって、金属ボール7にポスト6からの応力集中による損傷が生じることを防止できる。また、金属ボール7とポスト6との接続面が半球状となるので、金属ボール7とポスト6との接続面が平坦面である構造と比較して、ポスト6の径方向(金属ボール7とポスト6との対向方向と直交する方向)における金属ボール7とポスト6との接続強度が向上する。
なお、基部11の材料として銅を用い、先端部12の材料として錫を用いた構成を取り上げたが、基部11の材料および先端部12の材料として、それぞれ他の金属材料が用いられてもよい。先端部12の材料としては、純錫に限らず、基部11の材料よりも融点の低い金属材料であればよく、たとえば、錫を含む合金が用いられてもよい。また、基部11の材料として、たとえば、金を用いることができる。基部11の材料が金である場合、先端部12の材料としては、金よりも融点の低い金属材料、たとえば、ニッケルを用いることができる。
その他、特許請求の範囲に記載された事項の範囲で種々の設計変更を施すことが可能である。
2 半導体チップ
5 封止樹脂層
6 ポスト
7 金属ボール
10 貫通孔
11 基部
12 先端部
13 先端面
Claims (7)
- 半導体チップと、
前記半導体チップ上に積層された封止樹脂層と、
前記封止樹脂層を層厚方向に貫通して形成された貫通孔内に設けられ、前記封止樹脂層の表面よりも前記半導体チップ側において前記貫通孔の内面と接し、前記封止樹脂層の表面よりも前記半導体チップ側に配置された周縁部と、前記封止樹脂層の表面から前記半導体チップの反対側に向けて突出する頂部とを含む半球状の先端面を有するポストと、
前記貫通孔の内面と前記ポストの先端面とにより形成された隙間に入り込むように、かつ前記封止樹脂層の表面から突出するように前記ポストの先端面上に配置された外部接続端子とを含む、半導体装置。 - 前記ポストは、第1の金属材料からなる基部と、前記第1の金属材料と異なる第2の金属材料からなり、前記基部上に形成された先端部とを備えている、請求項1に記載の半導体装置。
- 前記基部は、前記貫通孔内に埋没し、前記先端部との接続面が前記封止樹脂層の表面よりも前記半導体チップ側に配置される高さに形成されている、請求項2に記載の半導体装置。
- 前記基部は、円柱状に形成され、
前記先端部は、半球状に形成されている、請求項2または3に記載の半導体装置。 - 前記第2の金属材料は、前記第1の金属材料よりも融点が低い、請求項2〜4のいずれか一項に記載の半導体装置。
- 前記第1の金属材料は、銅を成分に含み、
前記第2の金属材料は、錫を成分に含む、請求項5に記載の半導体装置。 - 半導体チップ上に、第1の金属材料からなる基部および前記第1の金属材料よりも低い融点を有する第2の金属材料からなる先端部を積み重ねた構造のポストを形成するポスト形成工程と、
前記半導体チップ上に、前記ポストを埋没させるように封止樹脂層を形成する封止樹脂層形成工程と、
前記封止樹脂層を前記第2金属層の表面が露出するまで研削する研削工程と、
前記研削工程後、前記先端部に対する熱処理により、前記先端部を一旦溶融させた後に凝固させる熱処理工程とを含む、半導体装置の製造方法。
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