JP5329169B2 - 薄膜トランジスタ基板及びこれを含む液晶表示装置 - Google Patents
薄膜トランジスタ基板及びこれを含む液晶表示装置 Download PDFInfo
- Publication number
- JP5329169B2 JP5329169B2 JP2008265105A JP2008265105A JP5329169B2 JP 5329169 B2 JP5329169 B2 JP 5329169B2 JP 2008265105 A JP2008265105 A JP 2008265105A JP 2008265105 A JP2008265105 A JP 2008265105A JP 5329169 B2 JP5329169 B2 JP 5329169B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- film transistor
- sub
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 106
- 239000000758 substrate Substances 0.000 title claims description 84
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 42
- 239000010410 layer Substances 0.000 claims description 131
- 239000003990 capacitor Substances 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 26
- 239000012044 organic layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 65
- 239000011241 protective layer Substances 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
Description
110 絶縁基板
121、122、123 第1乃至第3ゲート電極
125 ストレージライン
126 対向電極
127 第2補助電極
130 ゲート絶縁層
141、142、143 第1乃至第3半導体層
151、152、153 第1乃至第3オーミックコンタクト層
161、163、165 第1乃至第3ソース電極
162、164、166 第1乃至第3ドレイン電極
171 無機保護層
172 有機保護層
181、182、183、184、185 第1乃至第5コンタクトホール
191、192 第1及び第2サブ画素電極
193 第1補助電極
194 切開部
Tn1、Tn2、Tn3 第1乃至第3薄膜トランジスタ
P1、P2 第1及び第2サブ画素領域
Claims (12)
- 第nゲートライン及び第mデータラインに接続された第1及び第2薄膜トランジスタと、
前記第1及び第2薄膜トランジスタに各々接続された第1及び第2サブ画素電極と、
第n+1ゲートラインに接続されたゲート電極、前記ゲート電極と重畳する半導体層、前記第2サブ画素電極に接続され前記ゲート電極と部分的に重畳するソース電極、及び前記ソース電極と対向するドレイン電極を含む第3薄膜トランジスタと、
前記第1及び第2サブ画素電極と同一層に形成され、前記ドレイン電極に接続された第1補助電極と、前記ゲートラインと同一層に形成され、少なくとも一つの絶縁層を介して前記第1補助電極と少なくとも一部分が重畳する対向電極と、を含むダウンキャパシタと、
前記第3薄膜トランジスタのドレイン電極と前記第1サブ画素電極との間に形成されたアップキャパシタと、
を含むことを特徴とする薄膜トランジスタ基板。 - 第nゲートライン及び第mデータラインに接続された第1及び第2薄膜トランジスタと、
前記第1及び第2薄膜トランジスタに各々接続された第1及び第2サブ画素電極と、
第n+1ゲートラインに接続されたゲート電極、前記ゲート電極と重畳する半導体層、前記第2サブ画素電極に接続され前記ゲート電極と部分的に重畳するソース電極、及び前記ソース電極と対向するドレイン電極を含む第3薄膜トランジスタと、
前記第1及び第2サブ画素電極と同一層に形成され、前記ドレイン電極に接続された第1補助電極と、前記ゲートラインと同一層に形成され、少なくとも一つの絶縁層を介して前記第1補助電極と少なくとも一部分が重畳する対向電極と、を含むダウンキャパシタと、
前記第3薄膜トランジスタのドレイン電極に接続された第2補助電極と前記第1サブ画素電極との間に形成されたアップキャパシタと、
を含むことを特徴とする薄膜トランジスタ基板。 - 前記対向電極はストレージラインに接続されることを特徴とする請求項1又は請求項2に記載の薄膜トランジスタ基板。
- 前記アップキャパシタは、前記ドレイン電極と前記第1サブ画素電極の間に配置された少なくとも一つの絶縁層と共に前記第1サブ画素電極と重畳するように拡張された前記ドレイン電極を含むことを特徴とする請求項1に記載の薄膜トランジスタ基板。
- 前記アップキャパシタは、少なくとも一つの絶縁層を介して前記第1サブ画素電極と少なくとも一部分が重畳する前記第2補助電極を含み、前記第2補助電極は実質的に前記ゲートラインと同一層に形成されることを特徴とする請求項2に記載の薄膜トランジスタ基板。
- 前記少なくとも一つの絶縁層は、無機層及び有機層を含む二重層であることを特徴とする請求項1又は請求項2に記載の薄膜トランジスタ基板。
- 前記第1薄膜トランジスタ、前記第2薄膜トランジスタ及び前記第3薄膜トランジスタは、前記半導体層がチャンネル領域を除いて前記ソース電極及び前記ドレイン電極に重畳することを特徴とする請求項1又は請求項2に記載の薄膜トランジスタ基板。
- 第1基板と、
前記第1基板に対向して配置され、カラーフィルタを含む第2基板と、
前記第1基板と前記第2基板の間に介在した液晶層と、を含み、
前記第1基板は、
第nゲートライン及び第mデータラインに接続された第1及び第2薄膜トランジスタと、
前記第1及び第2薄膜トランジスタに各々接続された第1及び第2サブ画素電極と、
第n+1ゲートラインに接続されたゲート電極、前記ゲート電極と重畳する半導体層、前記第2サブ画素電極に接続され前記ゲート電極と部分的に重畳するソース電極、及び前記ソース電極と対向するドレイン電極を含む第3薄膜トランジスタと、
前記第1及び第2サブ画素電極と同一層に形成され、前記ドレイン電極に接続された第1補助電極と、前記ゲートラインと同一層に形成され、少なくとも一つの絶縁層を介して前記第1補助電極と少なくとも一部分が重畳する対向電極と、を含むダウンキャパシタと、
前記第3薄膜トランジスタのドレイン電極と前記第1サブ画素電極との間に形成されたアップキャパシタと、
を含むことを特徴とする液晶表示装置。 - 第1基板と、
前記第1基板に対向して配置され、カラーフィルタを含む第2基板と、
前記第1基板と前記第2基板の間に介在した液晶層と、を含み、
前記第1基板は、
第nゲートライン及び第mデータラインに接続された第1及び第2薄膜トランジスタと、
前記第1及び第2薄膜トランジスタに各々接続された第1及び第2サブ画素電極と、
第n+1ゲートラインに接続されたゲート電極、前記ゲート電極と重畳する半導体層、前記第2サブ画素電極に接続され前記ゲート電極と部分的に重畳するソース電極、及び前記ソース電極と対向するドレイン電極を含む第3薄膜トランジスタと、
前記第1及び第2サブ画素電極と同一層に形成され、前記ドレイン電極に接続された第1補助電極と、前記ゲートラインと同一層に形成され、少なくとも一つの絶縁層を介して前記第1補助電極と少なくとも一部分が重畳する対向電極と、を含むダウンキャパシタと、
前記第3薄膜トランジスタのドレイン電極に接続された第2補助電極と前記第1サブ画素電極との間に形成されたアップキャパシタと、
を含むことを特徴とする液晶表示装置。 - 前記対向電極はストレージラインに接続されることを特徴とする請求項8又は請求項9に記載の液晶表示装置。
- 前記アップキャパシタは、前記ドレイン電極と前記第1サブ画素電極の間に配置された少なくとも一つの絶縁層と共に前記第1サブ画素電極と重畳するように拡張された前記ドレイン電極を含むことを特徴とする請求項8に記載の液晶表示装置。
- 前記アップキャパシタは、少なくとも一つの絶縁層を介して前記第1サブ画素電極と少なくとも一部分が重畳する前記第2補助電極を含み、前記第2補助電極は実質的に前記ゲートラインと同一層に形成されることを特徴とする請求項9に記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070124739A KR101414043B1 (ko) | 2007-12-04 | 2007-12-04 | 박막 트랜지스터 기판 |
KR10-2007-0124739 | 2007-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009139929A JP2009139929A (ja) | 2009-06-25 |
JP5329169B2 true JP5329169B2 (ja) | 2013-10-30 |
Family
ID=40675344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008265105A Active JP5329169B2 (ja) | 2007-12-04 | 2008-10-14 | 薄膜トランジスタ基板及びこれを含む液晶表示装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8026991B2 (ja) |
JP (1) | JP5329169B2 (ja) |
KR (1) | KR101414043B1 (ja) |
CN (1) | CN101452941B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101542840B1 (ko) * | 2008-09-09 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
KR101609727B1 (ko) * | 2008-12-17 | 2016-04-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
KR101600887B1 (ko) * | 2009-07-06 | 2016-03-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
US8373814B2 (en) * | 2009-07-14 | 2013-02-12 | Samsung Display Co., Ltd. | Display panel and display panel device including the transistor connected to storage capacitor |
KR101739574B1 (ko) | 2009-07-14 | 2017-05-25 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 액정 표시 장치 |
CN102472939A (zh) * | 2009-10-21 | 2012-05-23 | 夏普株式会社 | 液晶显示装置用电路、液晶显示装置用基板以及液晶显示装置 |
JP5852793B2 (ja) * | 2010-05-21 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
TWI457674B (zh) * | 2011-04-13 | 2014-10-21 | Au Optronics Corp | 畫素陣列、畫素結構及畫素結構的驅動方法 |
KR101423907B1 (ko) * | 2011-11-22 | 2014-07-29 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터 및 그 제조방법 |
KR101973584B1 (ko) * | 2012-02-10 | 2019-04-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
CN103091923B (zh) * | 2013-01-31 | 2015-02-18 | 深圳市华星光电技术有限公司 | 一种阵列基板及液晶显示装置 |
CN103268048B (zh) * | 2013-04-27 | 2015-12-02 | 合肥京东方光电科技有限公司 | 一种阵列基板、显示装置及驱动方法 |
CN103558721A (zh) * | 2013-11-18 | 2014-02-05 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及其驱动方法 |
TWI526760B (zh) | 2014-07-17 | 2016-03-21 | 友達光電股份有限公司 | 液晶像素電路及其驅動方法 |
KR102267126B1 (ko) * | 2014-12-19 | 2021-06-21 | 삼성디스플레이 주식회사 | 디스플레이 패널 및 이의 제조 방법 |
KR102523911B1 (ko) * | 2016-02-05 | 2023-04-20 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102544323B1 (ko) * | 2016-11-08 | 2023-06-19 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102263122B1 (ko) | 2017-10-19 | 2021-06-09 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 |
CN112689792A (zh) * | 2018-09-13 | 2021-04-20 | 堺显示器制品株式会社 | 液晶显示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06102537A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | アクティブマトリクス型液晶表示素子 |
DE19712233C2 (de) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Flüssigkristallanzeige und Herstellungsverfahren dafür |
JP3891846B2 (ja) * | 2002-01-15 | 2007-03-14 | 株式会社日立製作所 | 液晶表示装置 |
US7205570B2 (en) * | 2002-07-19 | 2007-04-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel |
US7206048B2 (en) * | 2003-08-13 | 2007-04-17 | Samsung Electronics Co., Ltd. | Liquid crystal display and panel therefor |
KR100980018B1 (ko) * | 2003-08-13 | 2010-09-03 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 |
KR101086477B1 (ko) * | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 제조 방법 |
JP4571845B2 (ja) * | 2004-11-08 | 2010-10-27 | シャープ株式会社 | 液晶表示装置用基板及びそれを備えた液晶表示装置及びその駆動方法 |
JP4438665B2 (ja) | 2005-03-29 | 2010-03-24 | シャープ株式会社 | 液晶表示装置 |
KR101168728B1 (ko) * | 2005-07-15 | 2012-07-26 | 삼성전자주식회사 | 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법 |
KR20070012081A (ko) * | 2005-07-22 | 2007-01-25 | 삼성전자주식회사 | 박막 트랜지스터 기판의 제조 방법 |
KR101171187B1 (ko) * | 2005-11-07 | 2012-08-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 그 제조 방법 및 이를 포함하는액정 표시 장치 |
KR101246756B1 (ko) * | 2006-02-03 | 2013-03-26 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR101295298B1 (ko) * | 2006-07-28 | 2013-08-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20080056493A (ko) * | 2006-12-18 | 2008-06-23 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
US8542227B2 (en) * | 2007-02-05 | 2013-09-24 | Samsung Display Co., Ltd. | Display apparatus and method for driving the same |
KR101402913B1 (ko) * | 2007-07-04 | 2014-06-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 표시 장치 |
-
2007
- 2007-12-04 KR KR1020070124739A patent/KR101414043B1/ko active IP Right Grant
-
2008
- 2008-10-14 JP JP2008265105A patent/JP5329169B2/ja active Active
- 2008-10-22 US US12/255,908 patent/US8026991B2/en active Active
- 2008-12-01 CN CN2008101778185A patent/CN101452941B/zh active Active
-
2011
- 2011-08-24 US US13/217,054 patent/US8330889B2/en active Active
-
2012
- 2012-12-10 US US13/709,707 patent/US8551826B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130095618A1 (en) | 2013-04-18 |
KR101414043B1 (ko) | 2014-07-21 |
US20090141207A1 (en) | 2009-06-04 |
KR20090058099A (ko) | 2009-06-09 |
JP2009139929A (ja) | 2009-06-25 |
US8330889B2 (en) | 2012-12-11 |
US8026991B2 (en) | 2011-09-27 |
US8551826B2 (en) | 2013-10-08 |
CN101452941B (zh) | 2012-07-04 |
US20110310323A1 (en) | 2011-12-22 |
CN101452941A (zh) | 2009-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5329169B2 (ja) | 薄膜トランジスタ基板及びこれを含む液晶表示装置 | |
JP4881368B2 (ja) | 液晶表示装置の製造方法 | |
US8846458B2 (en) | Array substrate for in-plane switching mode liquid crystal display device and fabricating method thereof | |
KR101888422B1 (ko) | 박막 트랜지스터 기판 및 이의 제조 방법 | |
US20070242206A1 (en) | In-plane switching mode liquid crystal display and fabrication method thereof | |
US20120161140A1 (en) | Tft array substrate and manufacturing method thereof | |
KR20070002415A (ko) | 액정 표시 장치 및 그 제조 방법 | |
JP2018063348A (ja) | 液晶表示パネルおよび液晶表示装置 | |
US7061566B2 (en) | In-plane switching mode liquid crystal display device and method of fabricating the same | |
KR101969568B1 (ko) | 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법 | |
KR101362960B1 (ko) | 액정표시장치와 그 제조방법 | |
JP4514786B2 (ja) | 表示装置及びその製造方法 | |
US7397519B2 (en) | Liquid crystal display device and method of fabrication thereof having dummy layer and plurality of contact holes formed through ohmic contact, semiconductive and gate insulating layers | |
KR20050001938A (ko) | 수평 전계 인가형 액정 표시 패널 및 그 제조 방법 | |
KR101946927B1 (ko) | 액정표시장치용 어레이기판 및 이의 제조방법 | |
KR101429921B1 (ko) | 액정표시장치 | |
KR20090053609A (ko) | 횡전계방식 액정표시장치 및 그 제조방법 | |
KR20070037763A (ko) | 액정표시장치 | |
KR20070049402A (ko) | 액정 표시 장치, 박막 트랜지스터 기판 및 그 제조 방법 | |
KR20070025528A (ko) | 액정 표시 장치, 박막 트랜지스터 기판 및 그 제조 방법 | |
KR102000053B1 (ko) | 박막 트랜지스터 기판 및 이의 제조 방법 | |
KR101045462B1 (ko) | 박막트랜지스터의 제조방법 | |
KR20050069045A (ko) | 횡전계모드 액정표시소자 및 그 제조방법 | |
KR20050097135A (ko) | 횡전계형 액정 표시 장치 및 이의 제조 방법 | |
KR20140094154A (ko) | 메모리 다이나믹 듀얼모드 액정표시장치와 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110906 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120806 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130305 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130306 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130528 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130625 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130724 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5329169 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |