JP5287906B2 - 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 - Google Patents
赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 Download PDFInfo
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- JP5287906B2 JP5287906B2 JP2011045689A JP2011045689A JP5287906B2 JP 5287906 B2 JP5287906 B2 JP 5287906B2 JP 2011045689 A JP2011045689 A JP 2011045689A JP 2011045689 A JP2011045689 A JP 2011045689A JP 5287906 B2 JP5287906 B2 JP 5287906B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 161
- 239000002184 metal Substances 0.000 claims description 161
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- 238000005476 soldering Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
2 金属板
3 センサチップ
4 ASIC(回路部)
5 金属キャップ
6 内側キャップ
7 レンズ
21 開口部
22 キャップ位置決め用突起
Claims (8)
- 実装基板と、
上記実装基板上に実装される金属板と、
上記金属板上に搭載される赤外線を受信検知するセンサチップと、
上記金属板上に搭載される上記センサチップの検知信号を増幅する回路部と、
上記金属板上にかぶせられ、上記センサチップおよび上記回路部を覆う金属キャップとを有しており、
上記金属板には開口部が設けられており、上記実装基板上の電極と上記回路部とは、上記開口部を通じてワイヤ接続されていると共に、
上記金属板は上記実装基板上のGND電位に接続されており、
上記金属キャップは上記金属板に電気的に接続されていると共に、
上記金属板は上記実装基板に対して半田付けにて実装されており、
上記実装基板に形成される半田付け用ランドは、実装される上記金属板の4隅または4辺に対応する箇所と、金属板の中央に対応する箇所とに設けられていることを特徴とする赤外線温度センサ。 - 上記金属板は、半田付け性を確保するための表面コーティングが施されていることを特徴とする請求項1に記載の赤外線温度センサ。
- 上記金属板には、上記金属キャップを位置決めするためのキャップ位置決め用突起が設けられていることを特徴とする請求項1又は2に記載の赤外線温度センサ。
- 上記金属キャップの内側には、樹脂製の内側キャップが設けられていることを特徴とする請求項1から3のいずれか一項に記載の赤外線温度センサ。
- 上記金属キャップの上面には、赤外線をセンサ内部に取り込むための窓部が設けられており、上記窓部の直下には上記窓部を通過する赤外線をセンサチップ上に集光するレンズが配置されており、
上記内側キャップは、上記レンズをはめ込むための窪み部を有していることを特徴とする請求項4に記載の赤外線温度センサ。 - 上記レンズの周辺部は上記金属キャップに接触または近接して配置されており、上記レンズと上記金属キャップとの隙間は接着剤が充填されていることを特徴とする請求項5に記載の赤外線温度センサ。
- 請求項1から6のいずれか一項に記載の赤外線温度センサを搭載したことを特徴とする電子機器。
- 請求項1から6のいずれか一項に記載の赤外線温度センサを製造するための赤外線温度センサの製造方法であって、
実装基板上に、開口部が設けられた金属板を実装する工程と、
上記金属板上に、赤外線を受信検知するセンサチップと、上記センサチップの検知信号を増幅する回路部とを搭載する工程と、
上記実装基板上の電極と上記回路部とを、上記金属板の開口部を通じてワイヤ接続する工程と、
上記金属板上に、上記センサチップおよび上記回路部を覆う金属キャップをかぶせてパッケージングする工程とを有していることを特徴とする赤外線温度センサの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011045689A JP5287906B2 (ja) | 2011-03-02 | 2011-03-02 | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 |
CN201180068503.7A CN103403508B (zh) | 2011-03-02 | 2011-03-16 | 红外线温度传感器、电子设备及红外线温度传感器的制造方法 |
PCT/JP2011/056258 WO2012117568A1 (ja) | 2011-03-02 | 2011-03-16 | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 |
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JP2011045689A JP5287906B2 (ja) | 2011-03-02 | 2011-03-02 | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 |
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JP2012238100A Division JP5333641B2 (ja) | 2012-10-29 | 2012-10-29 | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 |
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JP2012181157A JP2012181157A (ja) | 2012-09-20 |
JP5287906B2 true JP5287906B2 (ja) | 2013-09-11 |
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CN (1) | CN103403508B (ja) |
WO (1) | WO2012117568A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015132584A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線検出器のキャップ及び赤外線検出器 |
JP2015132573A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線センサ |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5333641B2 (ja) * | 2012-10-29 | 2013-11-06 | オムロン株式会社 | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 |
JP6469353B2 (ja) * | 2014-03-31 | 2019-02-13 | 旭化成エレクトロニクス株式会社 | 赤外線センサ |
WO2016152222A1 (ja) * | 2015-03-25 | 2016-09-29 | Semitec株式会社 | 赤外線温度センサ及び赤外線温度センサを用いた装置 |
US20190310138A1 (en) * | 2016-07-04 | 2019-10-10 | Horiba, Ltd. | Infrared detector and radiation thermometer |
US11319240B2 (en) * | 2017-03-30 | 2022-05-03 | Agc Glass Europe | Glass for autonomous car |
WO2020240739A1 (ja) * | 2019-05-29 | 2020-12-03 | 三菱電機株式会社 | To-can型光モジュール |
EP3929575B1 (en) | 2020-06-22 | 2023-09-27 | Sensirion AG | Sensor device for determining heat transfer parameters of a fluid |
US20230288261A1 (en) * | 2020-08-19 | 2023-09-14 | Panasonic Intellectual Property Management Co., Ltd. | Infrared sensor |
CN214471356U (zh) * | 2021-02-05 | 2021-10-22 | 芯海科技(深圳)股份有限公司 | 红外温度传感器以及电子设备 |
CN115655478B (zh) * | 2022-12-23 | 2023-03-21 | 苏州森斯缔夫传感科技有限公司 | 一种红外传感器、抗温度变动性方法及测温仪 |
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JPH01202630A (ja) * | 1988-02-08 | 1989-08-15 | Nippon Ceramic Kk | 赤外線検出器 |
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2011
- 2011-03-02 JP JP2011045689A patent/JP5287906B2/ja active Active
- 2011-03-16 WO PCT/JP2011/056258 patent/WO2012117568A1/ja active Application Filing
- 2011-03-16 CN CN201180068503.7A patent/CN103403508B/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015132584A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線検出器のキャップ及び赤外線検出器 |
JP2015132573A (ja) * | 2014-01-15 | 2015-07-23 | オムロン株式会社 | 赤外線センサ |
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CN103403508A (zh) | 2013-11-20 |
WO2012117568A1 (ja) | 2012-09-07 |
JP2012181157A (ja) | 2012-09-20 |
CN103403508B (zh) | 2016-11-09 |
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