JP5281283B2 - 高垂直異方性及び面内平衡磁化を有する自由層を備えたスピン転移磁気素子 - Google Patents
高垂直異方性及び面内平衡磁化を有する自由層を備えたスピン転移磁気素子 Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 244
- 230000005415 magnetization Effects 0.000 title claims description 72
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 98
- 125000006850 spacer group Chemical group 0.000 claims abstract description 42
- 230000005347 demagnetization Effects 0.000 claims abstract description 41
- 229910003321 CoFe Inorganic materials 0.000 claims description 39
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 35
- 239000010952 cobalt-chrome Substances 0.000 claims description 35
- 230000004888 barrier function Effects 0.000 claims description 27
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 8
- 229910019222 CoCrPt Inorganic materials 0.000 claims description 6
- 229910018979 CoPt Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000003796 beauty Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 21
- 230000015654 memory Effects 0.000 abstract description 16
- 239000000463 material Substances 0.000 description 17
- 230000005290 antiferromagnetic effect Effects 0.000 description 15
- 230000008901 benefit Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- -1 rare earth transition metal Chemical class 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000013016 damping Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910016551 CuPt Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- NRNCYVBFPDDJNE-UHFFFAOYSA-N pemoline Chemical compound O1C(N)=NC(=O)C1C1=CC=CC=C1 NRNCYVBFPDDJNE-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000005418 spin wave Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Description
ピントンネル接合の横方向の寸法が小さい(約200ナノメートルより小さい)場合、スピン分極電流は、従来の自由層18’の磁化19’方向を切り換え得る。更に、スピン転移が従来の自由層18’の磁化19’方向を切り換え可能であるためには、従来の自由層18’は、充分に薄い方が良く、例えば、好適には、Coの場合、約10ナノメートル未満が好ましい。スピン転移に基づく磁化のスイッチングは、他のスイッチングメカニズムより優れており、従来の磁気素子10/10’の横方向の寸法が小さく、数百ナノメートルの範囲にある場合、観察可能になる。従って、スピン転移は、より小さい磁気素子10/10’を有する密度が高い磁気メモリに適している。
高いスイッチング電流密度を得るために用いられる。高い動作電流によって、高密度MRAMの場合、発熱、高い消費電力、大きなトランジスタサイズ、また更に他の問題等の設計上の問題が生じる。更に、従来の要素10等のスピンバルブを用いる場合は出力信号が小さい。従来の磁気素子10では、総抵抗及びSVベースのスピン転移要素の抵抗の変化は双方共に小さく、通常、それぞれ、2オーム及び5パーセント未満である。
Naoki Nishimura, et al. in "Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory", Journal of Applied Physics, Volume 91, Number 8, pp.5246-5249, 15 April 2002 J.C. Slonczewski, "Current-driven Excitation of Magnetic Multilayers," Journal of Magnetism and Magnetic Materials, vol.159, p.L1 (1996) L. Berger, "Emission of Spin Waves by a Magnetic Multilayer Traversed by a Current," Phys. Rev. B, vol.54, p.9353 (1996) F.J. Albert, J.A. Katine and R.A. Buhrman, "Spin-polarized Current Switching of a Co Thin Film Nanomagnet," Appl. Phys. Lett., vol.77, No.23, p.3809 (2000)
る。本磁気素子には、少なくとも固定層、非磁性スペーサ層、及び自由層が含まれる。スペーサ層は、固定層と自由層との間にある。磁気素子は、書き込み電流が磁気素子を通過する時、スピン転移を用いて自由層が切り替えられるように構成される。幾つかの態様において、磁気素子には、更に、バリア層、第2固定層が含まれる。他の態様において、磁気素子には、更に、第2スペーサ層と、第2固定層と、第1自由層に静磁気的に結合された第2自由層と、が含まれる。そのような態様において、第2スペーサ層は、第2固定層と第2自由層との間にあり、好適には、分離層が第1自由層と第2自由層との間に提供され、それらが静磁気的に結合されることを保証する。一態様において、1つ又は複数の自由層が、高垂直異方性を有する。垂直異方性は、面外減磁エネルギの少なくとも20パーセントであり、一般的に、100パーセント未満の垂直異方性エネルギを有する。
うに構成される。従って、好適な実施形態において、自由層130の幅w等の横方向の寸法は、小さく、好適には、200ナノメートルより小さい。更に、好適には、自由層130が、自由層130の面内で確実に特定の容易軸を有するように、何らかの差異が横方向の寸法間に提供される。
αtMs[Heff−2πMs]/g(θ)
上式において、
α=現象学的ギルバート(Gilbert)減衰定数
t=自由層の厚さ
Ms=自由層の飽和磁化
Heff=自由層の有効磁場
g(θ)=スピン転移効率を反映する。
有効磁場Heffには、外部磁場、形状異方性磁場、面内及び面外(即ち、垂直な)異方性、及び双極及び交換磁場が含まれる。垂直異方性は、通常、結晶の異方性から生じる。項g(θ)は、固定層110及び自由層130の磁化の相対的な角度方位に依存する。
方性強磁性層160及び強磁性層162は、交換結合される。
、更に、垂直異方性を引き上げ得る。従って、電流の更なる低減又は磁気素子100、100’、100’’、及び/又は100’’’の特性における他の改善を達成し得る。
性及び/又は応力等の他の条件を有する材料を用いて、自由層330の高垂直異方性を達成し得る。従って、自由層130、130’、130’’、及び130’’’を基にして上述した材料が、好ましい。更に、自由層130’を基にして上述したように、自由層230は、合成であってよい。高垂直異方性のために、磁気素子300は、より小さいスイッチング電流密度でスピン転移を用いて書き込み得る。言い換えると、磁気素子300は、磁気素子100、100’、100’’、100’’’及び/又はそれらの組合せの恩恵を共有し得る。バリア層340を用いることから、磁気素子300は、より高い抵抗及び磁気抵抗効果を有する。その結果、読み出し中、より大きい信号を得ることができる。他の一実施形態において、バリア層320は、導電層によって置き換え得る。しかしながら、そのような実施形態では、読み出し信号は、所定の読み出し電流に対して、小さくなる。
ルブ及びスピントンネル接合のそれらの機能をそれぞれ改善し得る。
は、自由層530’とバリア層520’との間に配置し得る。しかしながら、そのようなオプションの応力引上げ層によって、磁気抵抗効果が小さくなり得る。更に、オプションの応力引上げ層586を用いると、スピン転移に対してはスピントルクが小さくなり、また更に、スピンバルブ504に対しては磁気抵抗効果が小さくなり得る。従って、自由層530’’及び/又は550’’の高垂直異方性を得ることができる。従って、磁気素子100’’’の恩恵も達成し得る。
プ606を介して提供される。幾つかの実施形態において、ステップ606に先立って、超高垂直異方性強磁性層又は応力誘起層を提供し得る。ステップ606には、合成自由層を提供する段階を含み得る。そのような実施形態において、ステップ606には、更に、自由層の強磁性層間に高スピン分極層を提供する段階を含み得る。磁気素子200、300、300’、300’’、400、500、500’、及び/又は500’’が提供される場合、追加の固定層、スペーサ層及び幾つかの実施形態では、自由層が、ステップ608を介して提供される。そのような実施形態では、自由層は、高垂直異方性を有し得る。従って、磁気素子100’、100’’、100’’’、100’’’’、200、300、300’、300’’、300’’’、400、500、500’、500’’及び/又は500’’’を提供し得る。
Claims (19)
- 固定層と、
非磁性であるスペーサ層と、
自由層磁化を有する自由層と、が含まれ、
前記スペーサ層が、前記固定層と前記自由層との間にあり、前記自由層が、高垂直異方性及び面外減磁エネルギを有し、前記高垂直異方性が、前記面外減磁エネルギの少なくとも20パーセントであり且つ100パーセント未満である垂直異方性エネルギを有し、それによって前記自由層の磁化が面内に留まり、
前記磁気素子は、書き込み電流が前記磁気素子を通過する時、前記自由層磁化がスピン転移により切り替えられるように構成される磁気素子。 - 第1固定層と、
導電性及び非磁性であるスペーサ層と、
自由層磁化を有する自由層であって、前記スペーサ層が、前記第1固定層と前記自由層との間にあり、前記自由層が、高垂直異方性及び面外減磁エネルギを有し、前記高垂直異方性が、前記面外減磁エネルギの少なくとも20パーセントであり且つ100パーセント未満の垂直異方性エネルギを有し、それによって前記自由層の磁化が面内に留まる、前記自由層と、
絶縁体であり、また、トンネル通過可能な厚さを有するバリア層と、
前記バリア層が前記自由層と第2固定層との間にある前記第2固定層と、が含まれ、
前記磁気素子は、書き込み電流が前記磁気素子を通過する時、前記自由層磁化がスピン転移により切り替えられるように構成される磁気素子。 - 前記自由層は、単一の自由層である請求項2に記載の磁気素子。
- 前記第1固定層は、前記スペーサ層に隣接する強磁性層を含む第1合成固定層であり、前記強磁性層は第1磁化を有し、前記第2固定層は第2磁化を有し、また、前記第1磁化及び前記第2磁化は逆方向に向いている請求項2に記載の磁気素子。
- 前記第2固定層は第2合成固定層である請求項4に記載の磁気素子。
- 前記第2合成固定層には、前記バリア層に隣接する第2強磁性層が含まれ、前記第2強磁性層は第2磁化を有し、また、前記第1磁化及び前記第2磁化は逆方向に向いている請求項5に記載の磁気素子。
- 前記第1固定層及び前記第2固定層は、前記第1固定層及び前記第2固定層の双方からの電荷キャリアが、スピン転移による前記自由層磁化のスイッチングに寄与し得るように構成される請求項2に記載の磁気素子。
- 前記垂直異方性エネルギが、前記面外減磁エネルギの95パーセント未満である請求項2に記載の磁気素子。
- 前記垂直異方性エネルギが、前記自由層の面外減磁エネルギの90パーセントである請求項2に記載の磁気素子。
- 前記自由層には、Co、CoCr、CoPt、CoCrPt、CoFe、CoFeCr、CoFePt及び/又はCoFeCrPtが含まれる請求項2に記載の磁気素子。
- Cr及び/又はPtの量は、前記垂直異方性エネルギが、前記自由層の前記面外減磁エネルギの少なくとも20パーセントであり且つ95パーセント以下であるように調整される請求項10に記載の磁気素子。
- 前記自由層に隣接するシード層が更に含まれており、前記シード層には、Pt、Pd、Cr、Au、Cuが含まれており、前記自由層には、Co、CoCr、CoPt、CoCrPt、CoFe、CoFeCr、CoFePt及び/もしくはCoFeCrPtが含まれ、又は、Co、CoCr、CoPt、CoCrPt、CoFe、CoFeCr、CoFePt及び/もしくはCoFeCrPtからなる多層組合せが含まれる請求項2に記載の磁気素子。
- 前記自由層には、Co、CoCr、CoPt、CoCrPt、CoFe、CoFeCr、CoFePt及び/又はCoFeCrPtが含まれ、また、前記磁気素子は、前記自由層の高異方性の少なくとも一部を提供する前記自由層の固有応力を含むように構成される請求項2に記載の磁気素子。
- 前記自由層上に応力引上げ層が更に含まれ、前記応力引上げ層がPt、Pd、Cr、Ta、Au、及び/又はCuを含む請求項13に記載の磁気素子。
- 前記自由層には更に、
超高垂直異方性強磁性層と、
高いスピン分極を有する強磁性層と、
が含まれ、
前記超高垂直異方性強磁性層は、前記強磁性層と前記超高垂直異方性強磁性層との組合せが前記高垂直異方性を有することを保証するためのものである請求項2に記載の磁気素子。 - 前記超高垂直異方性強磁性層には、GdFe及び/又はGdCoFeが含まれる請求項15に記載の磁気素子。
- 前記超高垂直異方性強磁性層には、nが、1と10との間にあり、Coが3A乃至20A、CoFeが3A乃至20A、CoCrが3A乃至20A、Pdが10A乃至100A、Ptが10A乃至100Aである時、[Co/Pd]n/Co、[Co/Pt]n/Co、[CoFe/Pd]n/CoFe、[CoFe/Pt]n/CoFe、[CoCr/Pd]n/CoCr又は[CoCr/Pt]n/CoCrからなる多層が含まれる請求項15に記載の磁気素子。
- nは、前記自由層の総垂直異方性エネルギが前記総面外減磁エネルギの20と95パーセントとの間にあるように選択される請求項17に記載の磁気素子。
- 磁気素子を作製するための方法であって、
固定層を作製する段階と、
スペーサ層であって、非磁性である前記スペーサ層を作製する段階と、
自由層磁化を有する自由層を作製する段階であって、前記スペーサ層が、前記固定層と前記自由層との間にあり、前記自由層が、高垂直異方性及び面外減磁エネルギを有し、前記垂直異方性が、前記面外減磁エネルギの少なくとも20パーセントであり且つ100パーセント未満である垂直異方性エネルギを有し、それによって前記自由層の磁化が面内に留まる、前記段階と、が含まれ、
前記磁気素子は、書き込み電流が前記磁気素子を通過する時、前記自由層磁化がスピン転移により切り替えられるように構成される方法。
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2004
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-
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- 2005-02-24 WO PCT/US2005/006161 patent/WO2005082061A2/en active Application Filing
- 2005-02-24 KR KR1020067019833A patent/KR100856185B1/ko active IP Right Grant
- 2005-02-24 CN CNA2005800130362A patent/CN1947272A/zh active Pending
- 2005-02-24 JP JP2007501017A patent/JP5281283B2/ja active Active
- 2005-02-24 EP EP05714090.7A patent/EP1743386B1/en active Active
- 2005-09-30 US US11/239,969 patent/US7531882B2/en active Active
-
2008
- 2008-06-05 US US12/133,671 patent/US7821088B2/en not_active Expired - Lifetime
-
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- 2010-09-29 US US12/893,924 patent/US20110012215A1/en not_active Abandoned
-
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Also Published As
Publication number | Publication date |
---|---|
US20080230819A1 (en) | 2008-09-25 |
US7531882B2 (en) | 2009-05-12 |
EP1743386A2 (en) | 2007-01-17 |
US20050189574A1 (en) | 2005-09-01 |
WO2005082061A2 (en) | 2005-09-09 |
US6992359B2 (en) | 2006-01-31 |
CN1947272A (zh) | 2007-04-11 |
JP2007525847A (ja) | 2007-09-06 |
EP1743386B1 (en) | 2013-10-23 |
EP1743386A4 (en) | 2011-08-03 |
US20110012215A1 (en) | 2011-01-20 |
US7821088B2 (en) | 2010-10-26 |
WO2005082061A3 (en) | 2005-12-29 |
KR100856185B1 (ko) | 2008-09-03 |
KR20060125913A (ko) | 2006-12-06 |
JP2012119715A (ja) | 2012-06-21 |
JP5416236B2 (ja) | 2014-02-12 |
US20060081953A1 (en) | 2006-04-20 |
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