JP5271586B2 - プラズマ処理容器およびプラズマ処理装置 - Google Patents

プラズマ処理容器およびプラズマ処理装置 Download PDF

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Publication number: JP5271586B2
Authority: JP; Japan
Prior art keywords: plasma; plasma processing; container; seal member; seal
Prior art date: 2008-04-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2008101698A

Other languages

English (en)

Japanese (ja)

Other versions

JP2009253161A (ja

Inventor

新悟出口

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-04-09

Filing date

2008-04-09

Publication date

2013-08-21

2008-04-09 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2008-04-09 Priority to JP2008101698A priority Critical patent/JP5271586B2/ja

2009-04-08 Priority to TW098111687A priority patent/TWI442502B/zh

2009-04-09 Priority to CN201510062189.1A priority patent/CN104681388B/zh

2009-04-09 Priority to CNA2009101349057A priority patent/CN101556913A/zh

2009-10-29 Publication of JP2009253161A publication Critical patent/JP2009253161A/ja

2013-08-21 Application granted granted Critical

2013-08-21 Publication of JP5271586B2 publication Critical patent/JP5271586B2/ja

Status Active legal-status Critical Current

2028-04-09 Anticipated expiration legal-status Critical

Links

239000000463 material Substances 0.000 claims description 18
230000001681 protective effect Effects 0.000 claims description 13
238000005304 joining Methods 0.000 claims description 9
239000000470 constituent Substances 0.000 claims description 7
238000007789 sealing Methods 0.000 claims description 7
230000003628 erosive effect Effects 0.000 claims description 6
239000000919 ceramic Substances 0.000 claims description 4
239000007789 gas Substances 0.000 claims 2
239000000758 substrate Substances 0.000 description 23
238000001020 plasma etching Methods 0.000 description 22
238000000034 method Methods 0.000 description 11
230000008569 process Effects 0.000 description 10
238000007743 anodising Methods 0.000 description 6
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
238000005530 etching Methods 0.000 description 5
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000000903 blocking effect Effects 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000005401 electroluminescence Methods 0.000 description 2
239000004973 liquid crystal related substance Substances 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
229920006169 Perfluoroelastomer Polymers 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
230000009471 action Effects 0.000 description 1
238000002048 anodisation reaction Methods 0.000 description 1
238000004380 ashing Methods 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000007599 discharging Methods 0.000 description 1
239000013013 elastic material Substances 0.000 description 1
229920001971 elastomer Polymers 0.000 description 1
230000005684 electric field Effects 0.000 description 1
239000008151 electrolyte solution Substances 0.000 description 1
238000002438 flame photometric detection Methods 0.000 description 1
229920001973 fluoroelastomer Polymers 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
235000006408 oxalic acid Nutrition 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
230000035699 permeability Effects 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000009291 secondary effect Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229920002379 silicone rubber Polymers 0.000 description 1
239000004945 silicone rubber Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
230000009466 transformation Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)
Cleaning In General (AREA)

JP2008101698A 2008-04-09 2008-04-09 プラズマ処理容器およびプラズマ処理装置 Active JP5271586B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2008101698A JP5271586B2 (ja)	2008-04-09	2008-04-09	プラズマ処理容器およびプラズマ処理装置
TW098111687A TWI442502B (zh)	2008-04-09	2009-04-08	Plasma processing containers and plasma processing devices
CN201510062189.1A CN104681388B (zh)	2008-04-09	2009-04-09	等离子体处理容器和等离子体处理装置
CNA2009101349057A CN101556913A (zh)	2008-04-09	2009-04-09	等离子体处理容器和等离子体处理装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2008101698A JP5271586B2 (ja)	2008-04-09	2008-04-09	プラズマ処理容器およびプラズマ処理装置

Publications (2)

Publication Number	Publication Date
JP2009253161A JP2009253161A (ja)	2009-10-29
JP5271586B2 true JP5271586B2 (ja)	2013-08-21

Family

ID=41174967

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2008101698A Active JP5271586B2 (ja)	2008-04-09	2008-04-09	プラズマ処理容器およびプラズマ処理装置

Country Status (3)

Country	Link
JP (1)	JP5271586B2 (zh)
CN (2)	CN101556913A (zh)
TW (1)	TWI442502B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5871453B2 (ja) *	2010-05-20	2016-03-01	東京エレクトロン株式会社	プラズマ処理装置，基板保持機構，基板位置ずれ検出方法
CN104766778A (zh) *	2015-03-31	2015-07-08	上海华力微电子有限公司	等离子体刻蚀设备之腔体密封面保护装置
CN104701157A (zh) *	2015-03-31	2015-06-10	上海华力微电子有限公司	具有降低边缘刻蚀速率之顶部圆盘的等离子体刻蚀设备
CN108091630B (zh) *	2016-11-23	2020-01-03	中芯国际集成电路制造(上海)有限公司	一种半导体器件及其制造方法
JP7316863B2 (ja)	2019-07-19	2023-07-28	東京エレクトロン株式会社	第一導電性部材と第二導電性部材の接合構造と接合方法、及び基板処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0338358U (zh) *	1989-08-19	1991-04-12
JP2593690Y2 (ja) *	1993-10-15	1999-04-12	日新電機株式会社	Ｌｅｐ石英チャンバ
US5722668A (en) *	1994-04-29	1998-03-03	Applied Materials, Inc.	Protective collar for vacuum seal in a plasma etch reactor
KR100268432B1 (ko) *	1998-09-05	2000-11-01	윤종용	플라즈마 에칭을 위한 장치
JP4004154B2 (ja) *	1998-10-20	2007-11-07	東京エレクトロン株式会社	プラズマ処理装置
US6477980B1 (en) *	2000-01-20	2002-11-12	Applied Materials, Inc.	Flexibly suspended gas distribution manifold for plasma chamber
JP2002313780A (ja) *	2001-04-11	2002-10-25	Seiko Epson Corp	半導体製造装置用石英チャンバー及びその製造方法
JP2003068713A (ja) *	2001-08-24	2003-03-07	Matsushita Electric Ind Co Ltd	プラズマ処理装置
JP4628900B2 (ja) *	2005-08-24	2011-02-09	株式会社日立ハイテクノロジーズ	プラズマ処理装置
JP2007250569A (ja) *	2006-03-13	2007-09-27	Tokyo Electron Ltd	プラズマ処理装置およびプラズマに曝される部材

2008
- 2008-04-09 JP JP2008101698A patent/JP5271586B2/ja active Active
2009
- 2009-04-08 TW TW098111687A patent/TWI442502B/zh active
- 2009-04-09 CN CNA2009101349057A patent/CN101556913A/zh active Pending
- 2009-04-09 CN CN201510062189.1A patent/CN104681388B/zh active Active

Also Published As

Publication number	Publication date
CN104681388B (zh)	2018-03-27
JP2009253161A (ja)	2009-10-29
TW201003817A (en)	2010-01-16
TWI442502B (zh)	2014-06-21
CN101556913A (zh)	2009-10-14
CN104681388A (zh)	2015-06-03

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