JP5270836B2 - 能動領域ボンディングの両立性のある高電流構造体 - Google Patents
能動領域ボンディングの両立性のある高電流構造体 Download PDFInfo
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- JP5270836B2 JP5270836B2 JP2006523849A JP2006523849A JP5270836B2 JP 5270836 B2 JP5270836 B2 JP 5270836B2 JP 2006523849 A JP2006523849 A JP 2006523849A JP 2006523849 A JP2006523849 A JP 2006523849A JP 5270836 B2 JP5270836 B2 JP 5270836B2
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Description
102、302 N型MOS
104、304 N-DMOS
106,306 NPNデバイス
108、312 第1の金属層M1
110、318 第2の金属層M2
112、328 第3の金属層M3
114、334 ボール・ボンディング・ワイヤ
116、118、310、316 ビア
120、126、320 副層
122 分離用酸化物層
124、322 ギャップ
130、330 ボンディング・パッド
132、332 パッシベーション層
301 基板
308 第1の絶縁層
314 第2の絶縁層
324 第3の絶縁層
326 硬質層
Claims (8)
- 基板と、
前記基板に形成された少なくとも1個の能動デバイスと、
少なくとも1個のボンディング・パッドを有する最上部導電層と、
前記最上部導電層の表面上に形成されたパッシベーション層であって、前記少なくとも1個の能動デバイスを前記ボンディング・パッドの下方に配置し、前記ボンディング・パッドを前記最上部導電層上に形成するようにパターニングされた前記パッシベーション層と、
前記最上部導電層及び前記基板の間に形成した1つ以上の中間導電層と、
前記1つ以上の中間導電層と前記最上部導電層とを分離する1つ以上の絶縁材料層であって、前記1つ以上の絶縁材料層のうちの1つの絶縁材料層が前記最上部導電層及び前記最上部導電層に最も近接した中間導電層の間に位置した前記1つ以上の絶縁材料層と、を具備し、
前記最上部導電層と前記最上部導電層に最も近接した前記中間導電層との間に配置された前記絶縁材料層は、半導体構造に加わる垂直応力と水平応力とによるクラックに対する耐力を有するように選択された厚さを有することを特徴とする集積回路。 - 前記最上部導電層は副層を含み、この副層の材料は前記最上部導電層の残部に比べて相対的に硬いことを特徴とする請求項1に記載の集積回路。
- 前記副層はTiW、TiN又は窒化物層の内の1つから成ることを特徴とする請求項2に記載の集積回路。
- 前記最上部導電層と前記最上部導電層に最も近接した前記中間導電層との間に配置された前記絶縁材料層は、前記他の絶縁材料層に比べて比較的厚い絶縁層であることを特徴とする請求項2又は3に記載の集積回路。
- 前記最上部導電層と前記最上部導電層に最も近接した前記中間導電層との間に配置された前記絶縁材料層は、厚さが少なくとも1.5μmの酸化物層であることを特徴とする請求項2乃至4の何れか一つに記載の集積回路。
- 前記最上部導電層に最も近接した前記中間導電層の一部は、ギャップがパターニングされた導体を形成していることを特徴とする請求項2乃至5の何れか一つに記載の集積回路。
- 前記ギャップは、前記少なくとも1個のボンディング・パッド下方の前記中間導電層の全面積のうちの僅か10%しか占めないことを特徴とする請求項6に記載の集積回路。
- 前記ギャップは、前記中間導電層を通る電流の流れへの影響を最小にするような方向に向いていることを特徴とする請求項6又は7に記載の集積回路。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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US49688103P | 2003-08-21 | 2003-08-21 | |
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US10/698,184 US7005369B2 (en) | 2003-08-21 | 2003-10-31 | Active area bonding compatible high current structures |
US10/698,184 | 2003-10-31 | ||
PCT/US2004/023307 WO2005024943A1 (en) | 2003-08-21 | 2004-07-20 | Active area bonding compatible high current structures |
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EP (2) | EP2264757B1 (ja) |
JP (2) | JP5270836B2 (ja) |
KR (1) | KR100973399B1 (ja) |
CN (4) | CN105261607A (ja) |
TW (1) | TWI293186B (ja) |
WO (1) | WO2005024943A1 (ja) |
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JP2007042817A (ja) * | 2005-08-02 | 2007-02-15 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
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CN101996993A (zh) * | 2009-08-13 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | 利用单一金属化的焊盘下的器件 |
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-
2003
- 2003-10-31 US US10/698,184 patent/US7005369B2/en not_active Expired - Lifetime
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2004
- 2004-07-15 TW TW093121110A patent/TWI293186B/zh not_active IP Right Cessation
- 2004-07-20 JP JP2006523849A patent/JP5270836B2/ja not_active Expired - Fee Related
- 2004-07-20 EP EP10178443.7A patent/EP2264757B1/en not_active Expired - Fee Related
- 2004-07-20 KR KR1020067003594A patent/KR100973399B1/ko not_active IP Right Cessation
- 2004-07-20 WO PCT/US2004/023307 patent/WO2005024943A1/en active Application Filing
- 2004-07-20 EP EP04778684.3A patent/EP1661179B1/en not_active Expired - Fee Related
- 2004-08-20 CN CN201510633289.5A patent/CN105261607A/zh active Pending
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TW200511403A (en) | 2005-03-16 |
CN104112706A (zh) | 2014-10-22 |
EP2264757A3 (en) | 2011-06-29 |
CN1645606A (zh) | 2005-07-27 |
US7224074B2 (en) | 2007-05-29 |
KR20060087516A (ko) | 2006-08-02 |
US20070184645A1 (en) | 2007-08-09 |
CN102097366A (zh) | 2011-06-15 |
WO2005024943A1 (en) | 2005-03-17 |
CN105261607A (zh) | 2016-01-20 |
US20050042853A1 (en) | 2005-02-24 |
EP2264757A2 (en) | 2010-12-22 |
US20070187837A1 (en) | 2007-08-16 |
EP1661179A1 (en) | 2006-05-31 |
US7795130B2 (en) | 2010-09-14 |
EP1661179B1 (en) | 2017-09-06 |
EP2264757B1 (en) | 2017-03-29 |
US7005369B2 (en) | 2006-02-28 |
JP2012147006A (ja) | 2012-08-02 |
KR100973399B1 (ko) | 2010-07-30 |
US20060099823A1 (en) | 2006-05-11 |
JP2007503113A (ja) | 2007-02-15 |
TWI293186B (en) | 2008-02-01 |
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