JP5264023B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP5264023B2 JP5264023B2 JP2012010171A JP2012010171A JP5264023B2 JP 5264023 B2 JP5264023 B2 JP 5264023B2 JP 2012010171 A JP2012010171 A JP 2012010171A JP 2012010171 A JP2012010171 A JP 2012010171A JP 5264023 B2 JP5264023 B2 JP 5264023B2
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- liquid crystal
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- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims description 71
- 238000003860 storage Methods 0.000 claims description 34
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- 230000005684 electric field Effects 0.000 abstract description 23
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
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- 230000015572 biosynthetic process Effects 0.000 description 10
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
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- 239000010931 gold Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
図19は画素部における液晶の配向を図示したものである。図19において、図17と同じ要素は同じ数字で示す。観察は室温で行っている。
と、図18(C)において比較すると本発明の有用性が良くわかる。つまり、本発明により、図18(C)において見られた、第1の電極485上方の液晶の配向が固定された領域がほとんどなくなり、駆動電源を切っても液晶の配向が速やかに、元に戻った。
の厚さで形成する。結晶質半導体膜の材料に限定はないが、好ましくはシリコンまたはシリコンゲルマニウム(SiGe)合金などで形成すると良い。
そして幅100〜1000μm、例えば400μmで線状に集光したレーザー光を基板全面に渡って照射し、この時の線状レーザー光の重ね合わせ率(オーバーラップ率)を80〜98%として行う。
ゲート絶縁膜407はプラズマCVD法またはスパッタ法を用い、厚さを40〜150nmとしてシリコンを含む絶縁膜で形成する。本実施例では、120nmの厚さの酸化窒化シリコン膜で形成する。勿論、ゲート絶縁膜はこのような酸化窒化シリコン膜に限定されるものでなく、他のシリコンを含む絶縁膜を単層または積層構造として用いても良い。例えば、酸化シリコン膜を用いる場合には、プラズマCVD法でTEOS(Tetraethyl Ortho Silicate)とO2とを混合し、反応圧力40Pa、基板温度300〜400℃とし、高周波(13.56MHz)電力密度0.5〜0.8W/cm2で放電させて形成することができる。このようにして作製される酸化シリコン膜は、その後400〜500℃の熱アニールによりゲート絶縁膜として良好な特性を得ることができる。
また、442はソース配線、443は駆動回路内の配線として機能する。なお、本発明の第1の電極485はゲート電極を形成する導電層441のことをいう。
pチャネル型TFT502にはチャネル形成領域463、ゲート電極を形成する導電層439と重なる第5の不純物領域446、ソース領域またはドレイン領域として機能する第6の不純物領域451を有している。nチャネル型TFT503にはチャネル形成領域464、ゲート電極を形成する導電層440と重なる第3の不純物領域447(GOLD領域)、ゲート電極の外側に形成される第4の不純物領域452(LDD領域)とソース領域またはドレイン領域として機能する第1の不純物領域425を有している。
pチャネル型TFT502にはチャネル形成領域463、ゲート電極を形成する導電層439と重なる第5の不純物領域446、ソース領域またはドレイン領域として機能する第6の不純物領域451を有している。nチャネル型TFT503にはチャネル形成領域464、ゲート電極を形成する導電層440と重なる第3の不純物領域447(GOLD領域)、ゲート電極の外側に形成される第4の不純物領域452(LDD領域)とソース領域またはドレイン領域として機能する第1の不純物領域425を有している。
なお、本実施例では配向膜512を形成する前に、アクリル樹脂膜等の有機樹脂膜をパターニングすることによって基板間隔を保持するための柱状のスペーサを所望の位置に形成した。また、柱状のスペーサに代えて、球状のスペーサを基板全面に散布してもよい。
本発明は表示部2402に適用することができる。
Claims (10)
- TFTを有する画素と、前記画素を複数有する画素部と、前記画素部を駆動させる周辺回路部と、を有する表示装置であって、
前記画素は、
第1の電極と、
前記第1の電極と同時に形成されたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上に形成された第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同時に形成された配線を介して前記ソース配線と接続され、
前記第2の電極は、前記第1の電極と重なっており、
前記第1の電極の一部は、保持容量の一方の電極を構成し、
前記第2の電極は、画素電極と接することを特徴とする表示装置。 - TFTを有する画素と、前記画素を複数有する画素部と、前記画素部を駆動させる周辺回路部と、を有する表示装置であって、
前記画素は、
半導体膜と、
前記半導体膜と重なる第1の電極と、
前記第1の電極と同時に形成されたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上に形成された第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同時に形成された配線を介して前記ソース配線と接続され、
前記第2の電極は、前記第1の電極と重なっており、
前記第1の電極の一部は、保持容量の一方の電極を構成し、
前記半導体膜は、前記保持容量の他方の電極を構成し、
前記第2の電極は、画素電極と接することを特徴とする表示装置。 - 請求項2において、
前記第2の電極は、前記絶縁膜に形成された開口部を介して前記半導体膜と接続していることを特徴とする表示装置。 - 請求項1乃至3のいずれか一において、
前記画素電極は、前記ソース配線と重なることを特徴とする表示装置。 - TFTを有する画素と、前記画素を複数有する画素部と、前記画素部を駆動させる周辺回路部と、を有する表示装置であって、
前記画素は、
第1の電極と、
前記第1の電極と同層に設けられたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上の第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同層に設けられた配線を介して前記ソース配線と電気的に接続され、
前記第2の電極は、前記第1の電極と重なる領域を有し、
前記第1の電極の一部は、容量素子の一方の電極を構成し、
前記第2の電極は、画素電極と電気的に接続されていることを特徴とする表示装置。 - TFTを有する画素と、前記画素を複数有する画素部と、前記画素部を駆動させる周辺回路部と、を有する表示装置であって、
前記画素は、
半導体膜と、
前記半導体膜と重なる領域を有する第1の電極と、
前記第1の電極と同層に設けられたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上の第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同層に設けられた配線を介して前記ソース配線と電気的に接続され、
前記第2の電極は、前記第1の電極と重なる領域を有し、
前記第1の電極の一部は、容量素子の一方の電極を構成し、
前記半導体膜は、前記容量素子の他方の電極を構成し、
前記第2の電極は、画素電極と電気的に接続されていることを特徴とする表示装置。 - TFTを有する画素と、前記画素を複数有する画素部と、を有する表示装置であって、
前記画素は、
第1の電極と、
前記第1の電極と同時に形成されたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上の第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同時に形成された配線を介して前記ソース配線と電気的に接続され、
前記第2の電極は、前記第1の電極と重なる領域を有し、
前記第1の電極の一部は、容量素子の一方の電極を構成し、
前記第2の電極は、画素電極と電気的に接続されていることを特徴とする表示装置。 - TFTを有する画素と、前記画素を複数有する画素部と、を有する表示装置であって、
前記画素は、
半導体膜と、
前記半導体膜と重なる領域を有する第1の電極と、
前記第1の電極と同時に形成されたソース配線と、
前記第1の電極上の絶縁膜と、
前記絶縁膜上の第2の電極と、を有し、
前記TFTのソースまたはドレインは、前記第2の電極と同時に形成された配線を介して前記ソース配線と電気的に接続され、
前記第2の電極は、前記第1の電極と重なる領域を有し、
前記第1の電極の一部は、容量素子の一方の電極を構成し、
前記半導体膜は、前記容量素子の他方の電極を構成し、
前記第2の電極は、画素電極と電気的に接続されていることを特徴とする表示装置。 - 請求項6又は8において、
前記第2の電極は、前記絶縁膜に設けられた開口部を介して前記半導体膜と電気的に接続されていることを特徴とする表示装置。 - 請求項5乃至9のいずれか一において、
前記画素電極は、前記ソース配線と重なる領域を有することを特徴とする表示装置。
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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EXPY | Cancellation because of completion of term |