JP5262203B2 - 化合物半導体単結晶の製造装置および製造方法 - Google Patents
化合物半導体単結晶の製造装置および製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 114
- 150000001875 compounds Chemical class 0.000 title claims abstract description 112
- 239000013078 crystal Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000006243 chemical reaction Methods 0.000 claims abstract description 43
- 239000002994 raw material Substances 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000005092 sublimation method Methods 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000000859 sublimation Methods 0.000 claims description 7
- 230000008022 sublimation Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 12
- 239000008710 crystal-8 Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Description
(実施の形態1)
まず、図1と図2を用いて本発明の実施の形態1について説明する。図1と図2は、本実施の形態1における化合物半導体単結晶の製造装置1を用いた化合物半導体単結晶の特徴的な製造工程を示す断面図である。
まず、原料4を準備する。原料4は典型的には固相状態としておく。たとえば化合物半導体単結晶8としてAlN単結晶を成長させる場合には、原料4としてAlN焼結体を使用することができる。このAlN焼結体は、たとえばAlN粉末をプレス成形して成形体を作製し、該成形体を窒素雰囲気の真空容器内(10−6Torrの圧力下)において2000℃で2時間焼成することで作製することができる。なお、AlN単結晶以外の化合物半導体単結晶8を成長させる場合には、特定の化合物半導体粉末を用いて上記と同様の手法で焼結体を作製すればよい。
(実施の形態2)
次に、図3と図4を用いて本発明の実施の形態2について説明する。図3と図4は、本実施の形態2における化合物半導体単結晶の製造装置1を用いた化合物半導体単結晶の特徴的な製造工程を示す断面図である。
(実施の形態3)
次に、図5と図6を用いて本発明の実施の形態3について説明する。図5と図6は、本実施の形態3における化合物半導体単結晶の製造装置1を用いた化合物半導体単結晶の特徴的な製造工程を示す断面図である。
(実施の形態4)
次に、図7と図8を用いて本発明の実施の形態4について説明する。図7と図8は、本実施の形態4における化合物半導体単結晶の製造装置1を用いた化合物半導体単結晶の特徴的な製造工程を示す断面図である。
Claims (7)
- 原料にレーザ光を照射することで前記原料を昇華させることが可能なレーザ光源と、
前記レーザ光源から出射される前記レーザ光を透過させて容器内部に導入可能なレーザ導入窓を有し、昇華した前記原料を再結晶化させる下地基板を保持可能な反応容器と、
前記下地基板を加熱することが可能なヒータと、を備え、
前記原料は焼結体原料であり、
前記レーザ導入窓上に、前記焼結体原料を設置可能とし、
前記反応容器内において前記レーザ導入窓と対向する位置に下地基板を保持するようにし、
前記下地基板に前記レーザ光が照射された際の前記下地基板の状態変化を検知可能なセンサをさらに備え、
前記レーザ光の波長は、前記下地基板のエネルギー吸収量が、前記下地基板上に成長する化合物半導体単結晶のエネルギー吸収量よりも大きくなるように設定されている、化合物半導体単結晶の製造装置。 - 前記レーザ光源を移動可能とした、請求項1に記載の化合物半導体単結晶の製造装置。
- 複数の前記レーザ光源を有する、請求項1または2に記載の化合物半導体単結晶の製造装置。
- 反応容器内に設置した原料にレーザ光を照射して加熱することで前記原料を昇華させる昇華工程と、
昇華した前記原料を下地基板上で再結晶化させて化合物半導体単結晶を成長させる結晶成長工程と、
前記化合物半導体単結晶の形成後に、前記レーザ光を利用して前記化合物半導体単結晶を前記下地基板から分離する分離工程と、を備え、
前記下地基板のエネルギー吸収量が前記化合物半導体単結晶のエネルギー吸収量よりも大きくなるように前記レーザ光の波長を設定し、
前記レーザ光が前記下地基板に照射されることによる前記下地基板の状態変化を検知することにより、前記昇華工程の進捗状況を検知するようにした、化合物半導体単結晶の製造方法。 - 前記分離工程は、前記化合物半導体単結晶と前記下地基板との界面に前記レーザ光を照射して前記下地基板の少なくとも一部を除去することで、前記化合物半導体単結晶を前記下地基板から分離する、請求項4に記載の化合物半導体単結晶の製造方法。
- 前記結晶成長工程において、前記反応容器の内部空間の温度よりも高温で前記下地基板を加熱しながら前記化合物半導体単結晶を成長させる、請求項4または5に記載の化合物半導体単結晶の製造方法。
- 前記昇華工程、前記結晶成長工程および前記分離工程を連続して自動的に行なうようにした、請求項4〜6のいずれか1項に記載の化合物半導体単結晶の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008061444A JP5262203B2 (ja) | 2008-03-11 | 2008-03-11 | 化合物半導体単結晶の製造装置および製造方法 |
EP09720908A EP2251463A4 (en) | 2008-03-11 | 2009-03-06 | APPARATUS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR MONOCRYSTAL |
CA2694496A CA2694496A1 (en) | 2008-03-11 | 2009-03-06 | Compound semiconductor single-crystal manufacturing device and manufacturing method |
PCT/JP2009/054281 WO2009113455A1 (ja) | 2008-03-11 | 2009-03-06 | 化合物半導体単結晶の製造装置および製造方法 |
US12/668,426 US8591653B2 (en) | 2008-03-11 | 2009-03-06 | Compound semiconductor single-crystal manufacturing device and manufacturing method |
CN200980000432XA CN101680109B (zh) | 2008-03-11 | 2009-03-06 | 化合物半导体单晶制造装置和制造方法 |
KR1020097024482A KR20100130939A (ko) | 2008-03-11 | 2009-03-06 | 화합물 반도체 단결정의 제조 장치 및 제조 방법 |
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JP2008061444A JP5262203B2 (ja) | 2008-03-11 | 2008-03-11 | 化合物半導体単結晶の製造装置および製造方法 |
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JP2009215116A JP2009215116A (ja) | 2009-09-24 |
JP5262203B2 true JP5262203B2 (ja) | 2013-08-14 |
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US (1) | US8591653B2 (ja) |
EP (1) | EP2251463A4 (ja) |
JP (1) | JP5262203B2 (ja) |
KR (1) | KR20100130939A (ja) |
CN (1) | CN101680109B (ja) |
CA (1) | CA2694496A1 (ja) |
WO (1) | WO2009113455A1 (ja) |
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CN103074582B (zh) * | 2012-12-25 | 2015-05-13 | 王奉瑾 | 采用激光加热的pvd设备 |
KR102039055B1 (ko) * | 2018-04-20 | 2019-10-31 | 한국생산기술연구원 | 세라믹 단결정 잉곳의 취출 방법 |
DE102018129492B4 (de) * | 2018-11-22 | 2022-04-28 | Ebner Industrieofenbau Gmbh | Vorrichtung und Verfahren zum Züchten von Kristallen |
JP7292089B2 (ja) * | 2019-04-22 | 2023-06-16 | 一般財団法人ファインセラミックスセンター | 炭化珪素膜の製造方法 |
US20220246479A1 (en) * | 2021-02-04 | 2022-08-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Source/drain regions and methods of forming same |
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FR2576147B1 (fr) * | 1985-01-17 | 1987-11-27 | Flicstein Jean | Procede de depot et de cristallisation d'une couche mince de materiau organique au moyen d'un faisceau d'energie |
US4970196A (en) * | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
US5139591A (en) * | 1989-12-06 | 1992-08-18 | General Motors Corporation | Laser deposition of crystalline boron nitride films |
US5080753A (en) * | 1989-12-06 | 1992-01-14 | General Motors Corporation | Laser deposition of crystalline boron nitride films |
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
US6958093B2 (en) | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
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US6037313A (en) * | 1994-09-16 | 2000-03-14 | Sumitomo Electric Industries, Ltd. | Method and apparatus for depositing superconducting layer onto the substrate surface via off-axis laser ablation |
JPH11335199A (ja) * | 1998-05-27 | 1999-12-07 | Ngk Insulators Ltd | 単結晶膜の製造方法 |
JP4595207B2 (ja) * | 2001-01-29 | 2010-12-08 | パナソニック株式会社 | 窒化物半導体基板の製造方法 |
US6589857B2 (en) | 2001-03-23 | 2003-07-08 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of semiconductor film |
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CN1140915C (zh) | 2002-05-31 | 2004-03-03 | 南京大学 | 获得大面积高质量GaN自支撑衬底的方法 |
JP4809600B2 (ja) | 2003-10-28 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4513326B2 (ja) | 2004-01-14 | 2010-07-28 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体基板の製造方法 |
JP2008053640A (ja) * | 2006-08-28 | 2008-03-06 | Kanagawa Acad Of Sci & Technol | Iii−v族窒化物層およびその製造方法 |
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- 2009-03-06 CA CA2694496A patent/CA2694496A1/en not_active Abandoned
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- 2009-03-06 US US12/668,426 patent/US8591653B2/en not_active Expired - Fee Related
- 2009-03-06 KR KR1020097024482A patent/KR20100130939A/ko not_active Application Discontinuation
- 2009-03-06 EP EP09720908A patent/EP2251463A4/en not_active Withdrawn
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EP2251463A1 (en) | 2010-11-17 |
CN101680109A (zh) | 2010-03-24 |
CA2694496A1 (en) | 2009-09-17 |
WO2009113455A1 (ja) | 2009-09-17 |
KR20100130939A (ko) | 2010-12-14 |
US8591653B2 (en) | 2013-11-26 |
JP2009215116A (ja) | 2009-09-24 |
CN101680109B (zh) | 2013-03-06 |
US20100319614A1 (en) | 2010-12-23 |
EP2251463A4 (en) | 2011-06-01 |
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