JP5261475B2 - 複合材料及びその製造方法、並びにその製造装置 - Google Patents
複合材料及びその製造方法、並びにその製造装置 Download PDFInfo
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- JP5261475B2 JP5261475B2 JP2010501898A JP2010501898A JP5261475B2 JP 5261475 B2 JP5261475 B2 JP 5261475B2 JP 2010501898 A JP2010501898 A JP 2010501898A JP 2010501898 A JP2010501898 A JP 2010501898A JP 5261475 B2 JP5261475 B2 JP 5261475B2
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- JP
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- metal
- silicon
- alloy
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- 239000002131 composite material Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 251
- 239000002184 metal Substances 0.000 claims abstract description 251
- 238000007747 plating Methods 0.000 claims abstract description 58
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 41
- 239000000956 alloy Substances 0.000 claims abstract description 41
- 238000011049 filling Methods 0.000 claims abstract description 30
- 238000007772 electroless plating Methods 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 142
- 229910052710 silicon Inorganic materials 0.000 claims description 142
- 239000010703 silicon Substances 0.000 claims description 142
- 239000000463 material Substances 0.000 claims description 49
- -1 islands Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 24
- 239000004332 silver Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 22
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 16
- 239000003638 chemical reducing agent Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 14
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 77
- 239000000758 substrate Substances 0.000 abstract description 72
- 239000002344 surface layer Substances 0.000 abstract description 8
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 239000011148 porous material Substances 0.000 abstract description 5
- 229920001296 polysiloxane Polymers 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 83
- 239000000243 solution Substances 0.000 description 67
- 229910000521 B alloy Inorganic materials 0.000 description 50
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- 230000000694 effects Effects 0.000 description 23
- 229910017052 cobalt Inorganic materials 0.000 description 19
- 239000010941 cobalt Substances 0.000 description 19
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 19
- 239000010419 fine particle Substances 0.000 description 18
- 238000005259 measurement Methods 0.000 description 15
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 14
- 238000007654 immersion Methods 0.000 description 14
- JJFNJZGXHWYGMQ-UHFFFAOYSA-N [Ni].B#[Co] Chemical compound [Ni].B#[Co] JJFNJZGXHWYGMQ-UHFFFAOYSA-N 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 10
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 239000011800 void material Substances 0.000 description 7
- 229920000298 Cellophane Polymers 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 6
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 6
- 238000010998 test method Methods 0.000 description 6
- 101710134784 Agnoprotein Proteins 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 241000080590 Niso Species 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910001961 silver nitrate Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910001096 P alloy Inorganic materials 0.000 description 3
- HZEIHKAVLOJHDG-UHFFFAOYSA-N boranylidynecobalt Chemical compound [Co]#B HZEIHKAVLOJHDG-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1644—Composition of the substrate porous substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1889—Multistep pretreatment with use of metal first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/249955—Void-containing component partially impregnated with adjacent component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/249976—Voids specified as closed
- Y10T428/249977—Specified thickness of void-containing component [absolute or relative], numerical cell dimension or density
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249978—Voids specified as micro
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
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- Y10T428/249978—Voids specified as micro
- Y10T428/249979—Specified thickness of void-containing component [absolute or relative] or numerical cell dimension
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249986—Void-containing component contains also a solid fiber or solid particle
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249921—Web or sheet containing structurally defined element or component
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Description
伊藤健一、外1名、「ナノホールパターンドメディア」、雑誌FUJITSU、富士通株式会社、2007年1月、第58巻、第1号、p90−98 八重真治(S. Yae)、外4名,"Electrochemistry Communications",2003年8月,第5巻,p.632 辻埜和也(K. Tsujino)、外1名,"Electrochimica Acta",2007年11月20日,第53巻,p.28
本実施形態では、1つの複合材料及びその製造方法を示す。図1は、本実施形態における母材であるシリコン基板100の表面上への第1金属の分散配置装置10の説明図である。図2は、そのシリコン基板100の表面から非貫通孔を形成する非貫通孔形成装置20の説明図である。また、図3は、その非貫通孔への第2金属又は第2金属合金を充填するとともに、シリコン基板100の表面上に第2金属又は第2金属合金の膜又は層(以下、便宜上、「層」に表現を統一する)を形成するめっき装置30の説明図である。なお、本実施形態の第1金属は、銀(Ag)であり、その第2金属又は第2金属合金は、コバルト(Co)である。
本実施形態では、他の複合材料及びその製造方法を示す。但し、本実施形態の複合材料の製造方法は、一部の条件を除いて第1の実施形態のそれと同じである。従って、第1の実施形態と重複する説明は省略され得る。なお、本実施形態における第1金属102は、第1溶液14中への浸漬によって粒子状又はアイランド状に分散配置されるが、本実施形態では、便宜上、「粒子状」に表現を統一して説明する。
本実施形態では、もう1つの複合材料及びその製造方法を示す。但し、本実施形態の複合材料の製造方法は、母材を除いて第1の実施形態のそれと同じである。従って、第1の実施形態と重複する説明は省略され得る。なお、本実施形態における第1金属302は、第1溶液14中への浸漬によって粒子状又はアイランド状に分散配置されるが、本実施形態では、便宜上、「粒子状」に表現を統一して説明する。
本実施形態では、もう1つの複合材料及びその製造方法を示す。但し、本実施形態の複合材料の製造方法は、母材を除いて第1の実施形態のそれと同じである。従って、第1の実施形態と重複する説明は省略され得る。なお、本実施形態における第1金属402は、第1溶液14中への浸漬によって粒子状又はアイランド状に分散配置されるが、本実施形態では、便宜上、「粒子状」に表現を統一して説明する。
具体的には、例えば、ニッケル−ホウ素合金(Ni−B)をめっき材として充填するためには、まず、モル濃度が1mmol(ミリモル)/L(リットル)の硝酸銀(AgNo3)と、モル濃度が150mmol/Lのフッ化水素酸(HF)を含有する水溶液が本実施形態の第1溶液として採用される。次に、第1金属である銀(Ag)が分散配置されたシリコン基板100が第1の実施形態と同じ第2溶液中に浸漬される。その後、金属塩である硫酸ニッケル及び還元剤であるジメチルアミンボラン(DMAB)を含有する水溶液が第3溶液として採用されることにより、シリコン基板100の非貫通孔内がニッケル−ホウ素合金(Ni−B)で充填されるとともに、その非貫通孔内以外のシリコン基板100の表面は、ニッケル−ホウ素合金(Ni−B)の層によって覆われる。図12は、非貫通孔及び非貫通孔内以外のシリコン表面が、180秒間の第3溶液中の浸漬により、第2金属の合金506a,506bであるニッケル−ホウ素合金(Ni−B)でめっきされたときのSEM写真である。
例えば、第1金属として、金(Au)を用いた場合について説明する。まず、シリコン基板100が、予め5℃に調整され、モル濃度が1mmol(ミリモル)/L(リットル)のテトラクロロ金酸(HAuCl4)とモル濃度が150mmol/Lのフッ化水素酸(HF)を含有する水溶液(第1溶液)に10秒間浸漬された。次に、金の微粒子を担持したシリコン基板100が、第1の実施形態と同じ第2溶液中に15分間浸漬された。その後、金属塩である硫酸ニッケル(NiSO4)と、還元剤であるジメチルアミンボラン(DMAB)を含有する水溶液をめっき溶液としてめっき工程が行われた。このようにして、金(Au)を第1金属とするニッケル−ホウ素合金(Ni−B)層を備えたシリコン基板100の測定サンプルが作製された。
また、第1金属として、白金(Pt)を用いた場合について説明する。まず、シリコン基板100が、予め40℃に調整され、モル濃度が1mmol(ミリモル)/L(リットル)のヘキサクロロ白金(IV)酸とモル濃度が150mmol/Lのフッ化水素酸(HF)を含有する水溶液(第1溶液)に60秒間浸漬された。次に、金の微粒子を担持したシリコン基板100が、第1の実施形態と同じ第2溶液中に60分間浸漬された。その後、金属塩である硫酸ニッケル(NiSO4)と、還元剤であるジメチルアミンボラン(DMAB)を含有する水溶液をめっき溶液としてめっき工程を行われた。このようにして、白金(Pt)を第1金属とするニッケル−ホウ素合金(Ni−B)の層を備えたシリコン基板100の測定サンプルが作製された。
Claims (11)
- シリコンの表面から形成され、かつ粒子状、アイランド状、又は膜状の第1金属が分散配置された前記シリコンの表面をフッ化物イオンを含有する溶液に浸漬することにより形成された非貫通孔の底部に位置する前記第1金属が起点となって、前記非貫通孔が、自己触媒型無電解めっき法を用いた実質的に第2金属又は前記第2金属の合金により充填されるとともに、前記シリコンの表面が第2金属又は前記第2金属の合金で覆われている
複合材料。 - 前記非貫通孔により前記シリコンの表面が多孔性となる
請求項1に記載の複合材料。 - 前記第1金属が、パラジウム(Pd)、銀(Ag)、金(Au)、白金(Pt)、及びロジウム(Rh)の群から選ばれる少なくとも一種類の金属である
請求項1又は請求項2に記載の複合材料。 - 前記シリコンが、単結晶シリコン、多結晶シリコン、微結晶シリコン、及びアモルファスシリコンの群から選ばれる少なくとも1つの材料である
請求項1乃至請求項3のいずれか1項に記載の複合材料。 - シリコンの表面に、粒子状、アイランド状、又は膜状の第1金属を分散配置する分散配置工程と、
前記シリコンの表面をフッ化物イオンを含有する第2溶液に浸漬させることにより前記シリコンの表面から非貫通孔を形成する非貫通孔形成工程と、
第2金属のイオン及び還元剤を含有する第3溶液に浸漬することにより、前記非貫通孔の底部に位置する前記第1金属を起点として、前記非貫通孔を自己触媒型無電解めっき法を用いた実質的に前記第2金属又は前記第2金属の合金で充填するとともに、前記シリコンの表面を第2金属又は前記第2金属の合金で覆うめっき工程とを含む
複合材料の製造方法。 - シリコンの表面を第1金属のイオン及びフッ化物イオンを含有する第1溶液に浸漬することにより前記シリコンの表面に粒子状、アイランド状、又は膜状の前記第1金属を分散配置する分散配置工程と、
前記シリコンの表面をフッ化物イオンを含有する第2溶液に浸漬させることにより前記シリコンの表面から非貫通孔を形成する非貫通孔形成工程と、
第2金属のイオン及び還元剤を含有する第3溶液に浸漬することにより、前記非貫通孔の底部に位置する前記第1金属を起点として、前記非貫通孔を自己触媒型無電解めっき法を用いた実質的に前記第2金属又は前記第2金属の合金で充填するとともに、前記シリコンの表面を第2金属又は前記第2金属の合金で覆うめっき工程とを含む
複合材料の製造方法。 - 前記非貫通孔を形成することにより前記シリコンの表面を多孔性とする
請求項5又は請求項6に記載の複合材料の製造方法。 - 前記第1金属が、パラジウム(Pd)、銀(Ag)、金(Au)、白金(Pt)、及びロジウム(Rh)の群から選ばれる少なくとも一種類の金属である
請求項5又は請求項6に記載の複合材料の製造方法。 - 前記シリコンが、単結晶シリコン、多結晶シリコン、微結晶シリコン、及びアモルファスシリコンの群から選ばれる少なくとも1つの材料である
請求項5又は請求項6に記載の複合材料の製造方法。 - シリコンの表面に、粒子状、アイランド状、又は膜状の第1金属を分散配置する分散配置装置と、
前記シリコンの表面をフッ化物イオンを含有する第2溶液に浸漬させることにより前記シリコンの表面から非貫通孔を形成する非貫通孔形成装置と、
第2金属のイオン及び還元剤を含有する第3溶液に浸漬することにより、前記非貫通孔の底部に位置する前記第1金属を起点として、前記非貫通孔を自己触媒型無電解めっき法を用いた実質的に前記第2金属又は前記第2金属の合金で充填するとともに、前記シリコンの表面を第2金属又は前記第2金属の合金で覆うめっき装置とを備えた
複合材料の製造装置。 - シリコンの表面を第1金属のイオン及びフッ化物イオンを含有する第1溶液に浸漬することにより前記シリコンの表面に粒子状、アイランド状、又は膜状の前記第1金属を分散配置する分散配置装置と、
前記シリコンの表面をフッ化物イオンを含有する第2溶液に浸漬させることにより前記シリコンの表面から非貫通孔を形成する非貫通孔形成装置と、
第2金属のイオン及び還元剤を含有する第3溶液に浸漬することにより、前記非貫通孔の底部に位置する前記第1金属を起点として、前記非貫通孔を自己触媒型無電解めっき法を用いた実質的に前記第2金属又は前記第2金属の合金で充填するとともに、前記シリコンの表面を第2金属又は前記第2金属の合金で覆うめっき装置とを備えた
複合材料の製造装置。
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WO2009110431A1 (ja) | 2009-09-11 |
EP2261396A1 (en) | 2010-12-15 |
JP2013151758A (ja) | 2013-08-08 |
EP2261396B1 (en) | 2013-05-29 |
JP5663625B2 (ja) | 2015-02-04 |
CN101960045A (zh) | 2011-01-26 |
CN105506590B (zh) | 2018-01-23 |
EP2261396A4 (en) | 2011-11-09 |
KR101263077B1 (ko) | 2013-05-09 |
CN105506590A (zh) | 2016-04-20 |
US8722196B2 (en) | 2014-05-13 |
CN101960045B (zh) | 2016-05-18 |
JPWO2009110431A1 (ja) | 2011-07-14 |
US9252020B2 (en) | 2016-02-02 |
US20130323926A1 (en) | 2013-12-05 |
US20110117373A1 (en) | 2011-05-19 |
KR20100119001A (ko) | 2010-11-08 |
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