JP5257197B2 - 有機金属化合物供給装置 - Google Patents
有機金属化合物供給装置 Download PDFInfo
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- JP5257197B2 JP5257197B2 JP2009078933A JP2009078933A JP5257197B2 JP 5257197 B2 JP5257197 B2 JP 5257197B2 JP 2009078933 A JP2009078933 A JP 2009078933A JP 2009078933 A JP2009078933 A JP 2009078933A JP 5257197 B2 JP5257197 B2 JP 5257197B2
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- 150000002902 organometallic compounds Chemical class 0.000 title claims description 135
- 239000012159 carrier gas Substances 0.000 claims description 164
- 239000007787 solid Substances 0.000 claims description 65
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XLEXIQLVSDCJLI-UHFFFAOYSA-N C(C)[Zn]C1C=CC=C1 Chemical compound C(C)[Zn]C1C=CC=C1 XLEXIQLVSDCJLI-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 Fluororesin Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PBVXVCFKFWQRQN-UHFFFAOYSA-N [Zn].[CH]1C=CC=C1 Chemical compound [Zn].[CH]1C=CC=C1 PBVXVCFKFWQRQN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- FOJZPLNOZUNMJO-UHFFFAOYSA-M chloro(dimethyl)indigane Chemical compound [Cl-].C[In+]C FOJZPLNOZUNMJO-UHFFFAOYSA-M 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- DJYALRJDNXBDCR-UHFFFAOYSA-M ethane;iodozinc(1+) Chemical compound [CH2-]C.I[Zn+] DJYALRJDNXBDCR-UHFFFAOYSA-M 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- YSTQWZZQKCCBAY-UHFFFAOYSA-L methylaluminum(2+);dichloride Chemical compound C[Al](Cl)Cl YSTQWZZQKCCBAY-UHFFFAOYSA-L 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
不活性担体に担持された有機金属化合物を収容する充填容器、
該有機金属化合物を、充填容器内に、特にその下部に保持し、また、キャリアガスが通過することができる支持板、
該充填容器の上部に位置するキャリアガス導入口、
該充填容器の底部に位置し、該支持板の下方にて開口したキャリアガス導出口、および
該支持板と該キャリアガス導出口との間に設けられた該キャリアガス導出口より大きい邪魔板
を有して成る有機金属化合物供給装置であって、キャリアガスは、キャリアガス導入口から充填容器内に導入され、支持板上に保持される有機金属化合物中を上方から下方へ通過し、キャリアガス導出口から排出される有機金属化合物供給装置を用いることによって、固体の有機金属化合物が有効に利用されることを見出し、本発明に至った。
該充填容器(1)内に不活性担体に担持された該有機金属化合物(8)を保持し、キャリアガスが通過することのできる支持板(9)、
該充填容器の上部にキャリアガス導入口(4)、
該充填容器の底部であって該支持板の下方に開口したキャリアガス導出口(5)、および
該支持板(9)と該キャリアガス導出口(5)との間に取り付けられた、該キャリアガス導出口(5)の口径よりも大である邪魔板(10)
を更に有して成り、キャリアガスを支持板上に充填した不活性担体に担持された該有機金属化合物中を上方から下方へ通過させるようにしたことを特徴とする有機金属化合物供給装置に存する。
邪魔板は、導出管の先端部、即ち、導出口のレベルに取り付けた以外は、図4と同様の本発明の有機金属化合物供給装置を構成した。充填容器1の底部は湾曲状で容積が約1300cm3(内径:108mm、深さ:147mm)であり、充填容器の最底部から26mmの位置に支持板9(目開きの大きさ:2mmの金網))を配設した。キャリアガス導入口4には分散板11(円形平板:直径18mm)を充填容器1の天板と水平に該容器天板と分散板11との間隔が3mmとなるように取付け、キャリアガスが容器中心軸に対して略垂直に導入できるようにした。また、支持板9より下10mmの位置に開口しているキャリアガス導出管3(外径8mm、内径6mm)の先端部(キャリアガス導出口5)に邪魔板10(円形平板:直径30mm、但し、中央を導出管が貫通)を取り付けた。
キャリアガス導出管3の先端部(キャリアガス導出口5)に取り付けた邪魔板10(円形平板)の直径が50mmであること以外は、実施例1と同様の充填容器1に、実施例1と同様にしてTMIをアルミナ球に担持させた。
TMIの濃度は、使用率が約87%になるまで安定しており、その後低下した。
キャリアガス導出管3の先端部(キャリアガス導出口5)に取り付けた邪魔板10(円形平板)の直径が80mmであること以外は実施例1と同様の充填容器に、実施例1と同様にしてTMIをアルミナ球に担持させた。
キャリアガス導出管3の先端部(キャリアガス導出口5)に邪魔板10(円形平板)を取り付けてない以外は、実施例1と同様の充填容器1に、実施例1と同様にしてTMIをアルミナ球に担持させた。
2 キャリアガス導入管
3 キャリアガス導出管
4 キャリアガス導入口
5 キャリアガス導出口
6 液体有機金属化合物
7 固体有機金属化合物
8 不活性担体に担持した固体有機金属化合物
9 支持板
10 邪魔板
11 分散板
Claims (5)
- 常温で固体の有機金属化合物を充填し、キャリアガスを供給して該有機金属化合物を昇華せしめる充填容器を有して成る有機金属化合物供給装置であって、
該充填容器内に不活性担体に担持された該有機金属化合物を保持し、キャリアガスが通過することのできる支持板、
該充填容器の上部にキャリアガス導入口、
該充填容器の底部であって該支持板の下方に開口したキャリアガス導出口、および
該支持板と該キャリアガス導出口との間に取り付けられた、該キャリアガス導出口の口径よりも大である邪魔板
を更に有して成り、キャリアガスを支持板上に充填した不活性担体に担持された該有機金属化合物中を上方から下方へ通過させるようにしたことを特徴とする有機金属化合物供給装置。 - 支持板が、目開きの大きさが1〜5mmのステンレス製の金網である請求項1記載の有機金属化合物供給装置。
- キャリアガス導出の口径よりも大である邪魔板が円形平板であって、支持板と充填容器の胴体と略同心となるように配置された請求項1または請求項2記載の有機金属化合物供給装置。
- キャリアガス導入口より供給されるキャリアガスが、充填容器を垂直に設置した場合その中心軸に対し略垂直に噴出するように、キャリアガス導入口を構成してなる請求項1〜3のいずれかに記載の有機金属化合物供給装置。
- 有機金属化合物がトリメチルインジウムである請求項1〜4のいずれかに記載の有機金属化合物供給装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009078933A JP5257197B2 (ja) | 2008-03-31 | 2009-03-27 | 有機金属化合物供給装置 |
Applications Claiming Priority (3)
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JP2008090697 | 2008-03-31 | ||
JP2008090697 | 2008-03-31 | ||
JP2009078933A JP5257197B2 (ja) | 2008-03-31 | 2009-03-27 | 有機金属化合物供給装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009267388A JP2009267388A (ja) | 2009-11-12 |
JP5257197B2 true JP5257197B2 (ja) | 2013-08-07 |
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US (1) | US20110120053A1 (ja) |
JP (1) | JP5257197B2 (ja) |
KR (1) | KR20110008023A (ja) |
CN (1) | CN101981660B (ja) |
TW (1) | TW200945479A (ja) |
WO (1) | WO2009123117A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4746085B2 (ja) * | 2008-12-25 | 2011-08-10 | 京セラ株式会社 | 入力装置 |
US8758515B2 (en) * | 2010-08-09 | 2014-06-24 | Rohm And Haas Electronic Materials Llc | Delivery device and method of use thereof |
JP5728772B2 (ja) | 2011-05-31 | 2015-06-03 | 株式会社ブイ・テクノロジー | 原料ガス発生装置 |
JP5761067B2 (ja) * | 2012-02-13 | 2015-08-12 | 東京エレクトロン株式会社 | ガス供給装置及び熱処理装置 |
FR3019831B1 (fr) * | 2014-04-15 | 2016-04-29 | Wayne Mostert | Cuve de vinification en materiau magmatique |
KR20160123438A (ko) * | 2015-04-15 | 2016-10-26 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치용 증착원 |
KR102344996B1 (ko) | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
US11168394B2 (en) * | 2018-03-14 | 2021-11-09 | CeeVeeTech, LLC | Method and apparatus for making a vapor of precise concentration by sublimation |
KR102286480B1 (ko) * | 2018-11-27 | 2021-08-06 | 주식회사 레이크머티리얼즈 | 이중 구조의 유기금속 화합물 공급 장치 |
JP7240881B2 (ja) * | 2019-01-18 | 2023-03-16 | Jx金属株式会社 | 塩化金属の昇華容器 |
US12005628B2 (en) | 2020-02-19 | 2024-06-11 | Belkin International, Inc. | Overlay applicator machines and methods of providing the same |
CN111172513A (zh) * | 2020-03-09 | 2020-05-19 | 江苏南大光电材料股份有限公司 | 封装固体高纯金属有机化合物的容器及其应用 |
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JP2651530B2 (ja) * | 1988-04-15 | 1997-09-10 | 住友化学工業株式会社 | 気相成長用有機金属化合物供給装置 |
JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
JPH07278818A (ja) * | 1994-04-14 | 1995-10-24 | Murata Mfg Co Ltd | Cvd粉体原料用気化器 |
JPH10223540A (ja) * | 1997-02-03 | 1998-08-21 | Sony Corp | 有機金属気相成長装置 |
US6444038B1 (en) * | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
EP1079001B1 (en) * | 1999-08-20 | 2005-06-15 | Morton International, Inc. | Dual fritted bubbler |
JP4352783B2 (ja) * | 2002-08-23 | 2009-10-28 | 東京エレクトロン株式会社 | ガス供給系及び処理システム |
JP4748928B2 (ja) * | 2003-07-08 | 2011-08-17 | 東ソー・ファインケム株式会社 | 固体有機金属化合物の充填方法および充填容器 |
US20060037540A1 (en) * | 2004-08-20 | 2006-02-23 | Rohm And Haas Electronic Materials Llc | Delivery system |
FR2878453B1 (fr) * | 2004-11-30 | 2007-03-16 | Centre Nat Rech Scient Cnrse | Dispositif de fourniture de vapeurs d'un precurseur solide a un appareil de traitement |
US7722720B2 (en) * | 2004-12-08 | 2010-05-25 | Rohm And Haas Electronic Materials Llc | Delivery device |
JP4317174B2 (ja) * | 2005-09-21 | 2009-08-19 | 東京エレクトロン株式会社 | 原料供給装置および成膜装置 |
JP5209899B2 (ja) * | 2006-05-22 | 2013-06-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | デリバリーデバイス |
US7955569B2 (en) * | 2007-03-14 | 2011-06-07 | Hubert Patrovsky | Metal halide reactor for CVD and method |
-
2009
- 2009-03-27 JP JP2009078933A patent/JP5257197B2/ja not_active Expired - Fee Related
- 2009-03-30 KR KR1020107021622A patent/KR20110008023A/ko not_active Application Discontinuation
- 2009-03-30 WO PCT/JP2009/056502 patent/WO2009123117A1/ja active Application Filing
- 2009-03-30 US US12/935,518 patent/US20110120053A1/en not_active Abandoned
- 2009-03-30 CN CN2009801112459A patent/CN101981660B/zh not_active Expired - Fee Related
- 2009-03-31 TW TW098110746A patent/TW200945479A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101981660B (zh) | 2013-03-13 |
KR20110008023A (ko) | 2011-01-25 |
TW200945479A (en) | 2009-11-01 |
US20110120053A1 (en) | 2011-05-26 |
CN101981660A (zh) | 2011-02-23 |
JP2009267388A (ja) | 2009-11-12 |
WO2009123117A1 (ja) | 2009-10-08 |
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