JP5247710B2 - ダイ分離法 - Google Patents
ダイ分離法 Download PDFInfo
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- JP5247710B2 JP5247710B2 JP2009532539A JP2009532539A JP5247710B2 JP 5247710 B2 JP5247710 B2 JP 5247710B2 JP 2009532539 A JP2009532539 A JP 2009532539A JP 2009532539 A JP2009532539 A JP 2009532539A JP 5247710 B2 JP5247710 B2 JP 5247710B2
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- 238000000926 separation method Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000003064 anti-oxidating effect Effects 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000013043 chemical agent Substances 0.000 claims 8
- 239000010410 layer Substances 0.000 description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910017816 Cu—Co Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/14—Titanium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Description
Claims (21)
- 金属基板上に形成された複数の半導体ダイを含んだウェハ構造体を分割する方法であって、
(a)前記ウェハ構造体の少なくとも一部を切断するために第1ダイと第2ダイとの間にレーザを適用するステップであって、該ウェハ構造体の該少なくとも一部は該金属基板の少なくとも一部を包含し、該レーザを使用して該金属基板の少なくとも一部を切断した後に、該少なくとも一部の金属基板はレーザの熱により再結合するステップと、
(b)前記第1ダイと前記第2ダイとを完全分離するために該再結合をした部分に物理力を適用するステップと、
を含んでいることを特徴とする方法。 - 複数の半導体ダイ全体にステップ(a)を反復するステップをさらに含んでいることを特徴とする請求項1記載の方法。
- 複数の半導体ダイ全体にステップ(b)を反復するステップをさらに含んでいることを特徴とする請求項2記載の方法。
- ウェハ構造体の少なくとも一部は第1ダイ及び第2ダイの間に半導体材料を含んでいることを特徴とする請求項1記載の方法。
- 物理力適用ステップはブレーカ、ナイフ、エアナイフ及びウォータジェットのうちの少なくとも一種を利用することを特徴とする請求項1記載の方法。
- ウォータジェットは水のみであることを特徴とする請求項5記載の方法。
- 物理力適用ステップは化学剤溶液のウォータジェットの適用を含んでいることを特徴とする請求項1記載の方法。
- 化学剤溶液は酸又は塩基であることを特徴とする請求項7記載の方法。
- 化学剤溶液はH 2 SO 4 :H 2 O 2 、HNO 3 、HNO 3 /HCl、NH 4 OH:H 2 O 2 及びH 3 PO 4 のうちの少なくとも一種を含んでいることを特徴とする請求項8記載の方法。
- 化学剤溶液はCu、Pd、Ni及びAuのうちの少なくとも一種を含んでいることを特徴とする請求項7記載の方法。
- 化学剤溶液のウォータジェット適用ステップにより第1ダイと第2ダイのエッジには酸化防止表面安定化層が形成されることを特徴とする請求項7記載の方法。
- 金属基板はCu、Ni、Au、Ag、Co及びそれらの合金のうちの少なくとも一種を含んでいることを特徴とする請求項1記載の方法。
- 金属基板はシード金属層及び厚金属層を含んでいることを特徴とする請求項1記載の方法。
- シード金属層はCu、Ni、W、Ta/Cu、Ta/TaN/Cu、TaN/Cu、Ti/T
aN/Cu、Ta/TiN/Cu、Ti/Cu、Ti/TiN/Cu、TiN/Cu、Cr/Au、Cr/Au/Ni/Au、Ti/Au及びTi/Ni/Auのうちの少なくとも一種を含んでいることを特徴とする請求項13記載の方法。 - 半導体ダイは発光ダイオード(LED)ダイ、パワーデバイスダイ、レーザダイオードダイ又は垂直キャビティ表面発光デバイスダイであることを特徴とする請求項1記載の方法。
- 金属基板上に形成された複数の垂直発光ダイオード(VLED)ダイを分離する方法であって、
(a)隣接VELDダイと前記金属基板の少なくとも一部との間の半導体材料を切断するために前記複数のVLEDダイの隣接VLEDダイ間にレーザを適用するステップであって、該レーザを使用して該金属基板の少なくとも一部を切断した後に、該少なくとも一部の金属基板はレーザの熱により再結合するステップと、
(b)前記隣接VLEDダイを分離するために該再結合をした部分に物理力を適用するステップと、
を含んでいることを特徴とする方法。 - 隣接VLEDダイを分離する物理力適用ステップはブレーカ、ナイフ、エアナイフ及びウォータジェットのうちの少なくとも一種を利用することを特徴とする請求項16記載の方法。
- 隣接VLEDダイを分離する物理力適用ステップは化学剤溶液のウォータジェットの適用を含んでいることを特徴とする請求項16記載の方法。
- 化学剤溶液はCu、Pd、Ni及びAuのうちの少なくとも一種を含んでいることを特徴とする請求項18記載の方法。
- 化学剤溶液のウォータジェット適用ステップにより第1ダイと第2ダイのエッジには酸化防止表面安定化層が形成されることを特徴とする請求項18記載の方法。
- VLEDダイはGaN、AlGaN、InGaN及びAlInGaNのうちの少なくとも一種を含んでいることを特徴とする請求項16記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/548,647 | 2006-10-11 | ||
US11/548,647 US7892891B2 (en) | 2006-10-11 | 2006-10-11 | Die separation |
PCT/US2007/080838 WO2008045887A1 (en) | 2006-10-11 | 2007-10-09 | Die separation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010507234A JP2010507234A (ja) | 2010-03-04 |
JP5247710B2 true JP5247710B2 (ja) | 2013-07-24 |
Family
ID=39283207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009532539A Active JP5247710B2 (ja) | 2006-10-11 | 2007-10-09 | ダイ分離法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7892891B2 (ja) |
JP (1) | JP5247710B2 (ja) |
TW (1) | TWI371791B (ja) |
WO (1) | WO2008045887A1 (ja) |
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US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
JP5852303B2 (ja) * | 2010-06-30 | 2016-02-03 | 富士フイルム株式会社 | 金属膜表面の酸化防止方法及び酸化防止液 |
US9287175B2 (en) | 2010-11-05 | 2016-03-15 | Win Semiconductors Corp. | Fabrication method for dicing of semiconductor wafers using laser cutting techniques |
TWI438836B (zh) * | 2010-11-05 | 2014-05-21 | Win Semiconductors Corp | 一種用於雷射切割半導體晶圓之製程方法 |
US8686461B2 (en) | 2011-01-03 | 2014-04-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having stepped substrates and method of fabrication |
US20120175652A1 (en) * | 2011-01-06 | 2012-07-12 | Electro Scientific Industries, Inc. | Method and apparatus for improved singulation of light emitting devices |
US9368404B2 (en) * | 2012-09-28 | 2016-06-14 | Plasma-Therm Llc | Method for dicing a substrate with back metal |
DE102012111358A1 (de) | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
US9209082B2 (en) * | 2014-01-03 | 2015-12-08 | International Business Machines Corporation | Methods of localized hardening of dicing channel by applying localized heat in wafer kerf |
US9779932B2 (en) * | 2015-12-11 | 2017-10-03 | Suss Microtec Photonic Systems Inc. | Sacrificial layer for post-laser debris removal systems |
EP3593423A4 (en) | 2017-04-12 | 2021-01-20 | Sense Photonics, Inc. | BEAM FORMING FOR ULTRA-SMALL VERTICAL RESONATOR SURFACE-EMITTING LASER (VCSEL) ARRAYS |
KR102544296B1 (ko) * | 2018-09-13 | 2023-06-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치 |
CN111370369A (zh) * | 2020-03-20 | 2020-07-03 | 西安唐晶量子科技有限公司 | 一种金属衬底发光器件晶圆的分离方法 |
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US7892891B2 (en) | 2011-02-22 |
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