JP5245880B2 - 電力用半導体モジュールとその製造方法 - Google Patents
電力用半導体モジュールとその製造方法 Download PDFInfo
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- JP5245880B2 JP5245880B2 JP2009024146A JP2009024146A JP5245880B2 JP 5245880 B2 JP5245880 B2 JP 5245880B2 JP 2009024146 A JP2009024146 A JP 2009024146A JP 2009024146 A JP2009024146 A JP 2009024146A JP 5245880 B2 JP5245880 B2 JP 5245880B2
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000011347 resin Substances 0.000 claims description 53
- 229920005989 resin Polymers 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 8
- 238000001721 transfer moulding Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 37
- 238000012546 transfer Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910000906 Bronze Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Description
本実施形態は低コストで小型化、薄型化が可能な電力用半導体モジュールとその製造方法に関する。本実施形態の説明にあたり、同一材料または同一、対応する構成要素には同一の符号を付して複数回の説明を省略する場合がある。他の実施形態においても同様である。
本実施形態はトランスファーモールド樹脂による樹脂封止の前に切上げ部を形成する電力用半導体モジュールの製造方法に関する。本実施形態は図12〜15を参照して説明する。
Claims (8)
- 基板の回路パターンに接続された半導体素子と、
前記回路パターンまたは前記半導体素子上に接続された端子と、
前記基板と前記半導体素子と前記端子を覆う樹脂筐体とを備え、
前記端子は前記端子の一平面に形成された切込みを切上げて形成された切上げ部を有し、前記切上げ部が前記樹脂筐体から露出し、かつ、前記樹脂筐体外部へ伸びることを特徴とする電力用半導体モジュール。 - 前記端子は、前記切上げ部と接続される外部配線端子と同一材料であることを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記端子の一平面が前記樹脂筐体から露出することを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記切上げ部は先端に向かうほど細く形成されたことを特徴とする請求項1に記載の電力用半導体モジュール。
- 前記樹脂筐体内の配線は前記端子によって行われたことを特徴とする請求項1に記載の電力用半導体モジュール。
- 基板の回路パターンに半導体素子を接続する工程と、
前記回路パターンまたは前記半導体素子上に端子を接続する工程と、
前記基板と前記半導体素子と前記端子を前記端子の一平面が表面に露出するように樹脂封止し樹脂筐体を形成する工程と、
前記樹脂筐体から露出する前記端子の一平面に形成された切込みを切上げて前記樹脂筐体の外部に伸びる切上げ部を形成する工程とを備えることを特徴とする電力用半導体モジュールの製造方法。 - 前記樹脂筐体を形成する工程の前に前記端子の一平面に切込みを形成し、前記切上げ部を形成する工程では前記切込みを利用して前記切上げ部を形成することを特徴とする請求項6に記載の電力用半導体モジュールの製造方法。
- 基板の回路パターンに半導体素子を接続する工程と、
前記回路パターンまたは前記半導体素子上に端子を接続する工程と、
前記端子の一平面に形成された切込みを、前記端子の一平面の方向に力を加えると平面に戻るが力を加えなければ前記端子の一平面から突出することが可能な弾性を有するように切上げて切上げ部を形成する工程と、
前記半導体素子を接続する工程および前記端子を接続する工程および前記切上げ部を形成する工程のあとに、トランスファーモールドに用いる金型内壁によって前記切上げ部が平面となるように力が加えられた状態で、樹脂筐体を形成する工程とを備えることを特徴とする電力用半導体モジュールの製造方法。
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JP2009024146A JP5245880B2 (ja) | 2009-02-04 | 2009-02-04 | 電力用半導体モジュールとその製造方法 |
DE102009042390A DE102009042390A1 (de) | 2009-02-04 | 2009-09-21 | Leistungshalbleitermodul und Verfahren zu dessen Herstellung |
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JP2009024146A JP5245880B2 (ja) | 2009-02-04 | 2009-02-04 | 電力用半導体モジュールとその製造方法 |
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JP2010182828A JP2010182828A (ja) | 2010-08-19 |
JP5245880B2 true JP5245880B2 (ja) | 2013-07-24 |
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US9849642B2 (en) | 2013-12-19 | 2017-12-26 | Novartis Ag | Method for avoiding entrapment of air bubbles in a lens forming material and apparatus for carrying out the method |
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JP5383621B2 (ja) * | 2010-10-20 | 2014-01-08 | 三菱電機株式会社 | パワー半導体装置 |
JP6305176B2 (ja) * | 2014-04-11 | 2018-04-04 | 三菱電機株式会社 | 半導体装置及び製造方法 |
JP6249892B2 (ja) * | 2014-06-27 | 2017-12-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE102016211479A1 (de) * | 2016-06-27 | 2017-12-28 | Siemens Aktiengesellschaft | Leistungsmodul |
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JP4569473B2 (ja) | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
JP5266685B2 (ja) | 2006-09-29 | 2013-08-21 | 日立化成株式会社 | 熱硬化性樹脂組成物並びにこれを用いたプリプレグ及び積層板 |
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US9849642B2 (en) | 2013-12-19 | 2017-12-26 | Novartis Ag | Method for avoiding entrapment of air bubbles in a lens forming material and apparatus for carrying out the method |
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