JP5242688B2 - 導電性ナノ薄膜およびこれを利用した微細電気機械システムセンサー - Google Patents
導電性ナノ薄膜およびこれを利用した微細電気機械システムセンサー Download PDFInfo
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- JP5242688B2 JP5242688B2 JP2010522781A JP2010522781A JP5242688B2 JP 5242688 B2 JP5242688 B2 JP 5242688B2 JP 2010522781 A JP2010522781 A JP 2010522781A JP 2010522781 A JP2010522781 A JP 2010522781A JP 5242688 B2 JP5242688 B2 JP 5242688B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/40—Fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0214—Biosensors; Chemical sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Non-Insulated Conductors (AREA)
- Measuring Fluid Pressure (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
以下の実施例にて、同一な構成要素は同一な図面符号を付与し、同一な構成要素についての重複説明は省略する。また、添付の図面にて、導電性ナノ薄膜を成す各層および物質の形および厚みは、説明の便宜を考慮し誇張または概略化して図示した。
図2はPAHの構造式であり、図3はPSSの構造式であり、図4はPDACの構造式であり、図5はPMAの構造式である。
図6はPVPの構造式であり、図7はPAAの構造式である。
図8はPPyの構造式であり、図9はPANIの構造式であり、図10はPTs構造式であり、図11はPEDOTの構造式である。
図12は、本発明の実施例にかかる機能化された炭素ナノチューブの概念図である。
図13は、本発明の別の実施例にかかる導電性ナノ薄膜の断面図を示す。
本発明の別の実施例にかかる導電性ナノ薄膜20は、図13を参照すると、基板110の上部に形成される下部高分子電解質膜11、炭素ナノチューブ層13及び上部金属膜25を含んで形成される。
図14は、本発明の別の実施例にかかる導電性ナノ薄膜の断面図を示す。
本発明の別の実施例にかかる導電性ナノ薄膜30は、図14を参照すると、基板110の上部に形成される下部高分子電解質膜11と炭素ナノチューブ層13、及び上部高分子電解質膜35を含んで形成される。
図15は、本発明の実施例にかかる導電性ナノ薄膜を利用した微小電気機械システムセンサーの断面図である。
図16は炭素ナノチューブ層が形成された導電性ナノ薄膜の写真であり、図17は導電性ナノ薄膜とスペースを示す写真である。
一方、未説明符号の‘160’は、センサーに固定されている生体物質を示す。
微小電気機械システムセンサー100は、感知しようとする対象に応じて圧力センサー、湿度センサー、温度センサー、接触センサー、生化学センサーのように様々な対象を感知するセンサーとして使用できる。
図18〜図21は、本発明の微細電気機械システムセンサーの製造方法を示す工程図である。
以下の説明では、前記微小電気機械システムセンサー100がバイオセンサーとして使用される場合について説明する。
既存のバイオセンサーは、大部分がバイオ−光学的検出方法に基づいているため、生体物質の蛍光処理過程が必須である。また、既存のバイオセンサーは光学的特性を検出するために蛍光物質を活性化できるレーザー及び発光した生体物質を観察する蛍光顕微鏡等の検出システムが必要である。
上記導電性ナノ薄膜は、バイオセンサーへの応用だけでなく、圧力センサー、慣性センサー、ガスセンサー、湿度センサー、指紋センサー等の薄膜を利用する様々なセンサーの性能を一層向上させることができることは当業者にとって明白である。
Claims (10)
- 開口部が形成されている基板と、
下部高分子電解質膜と、前記下部高分子電解質膜の上部に炭素ナノチューブがネットワークを成すように形成される炭素ナノチューブ層と、を含み、前記開口部を含む前記基板上に形成される導電性ナノ薄膜と、
前記導電性ナノ薄膜の上部にスペーサーで前記導電性ナノ薄膜と離隔されて配置される上板と、
前記基板の下部に配置される下板と、
前記導電性ナノ薄膜の上面と離隔されて前記上板の下部に形成される上部電極と、を備えることを特徴とする微小電気機械システムセンサー。 - 前記導電性ナノ薄膜が、前記スペーサーの開口部を通じて露出されるように形成されることを特徴とする請求項1に記載の微小電気機械システムセンサー。
- 前記微小電気機械システムセンサーが、感知しようとする対象に応じて圧力センサー、湿度センサー、温度センサー、接触センサー、生化学センサーで形成されることを特徴とする請求項1に記載の微小電気機械システムセンサー。
- 前記導電性ナノ薄膜が、前記炭素ナノチューブ層の上面に形成される上部高分子電解質膜をさらに含むことを特徴とする請求項1に記載の微小電気機械システムセンサー。
- 前記下部高分子電解質膜及び前記上部高分子電解質膜が、それぞれPAH、PSS、PVP、PAA、PPy、PANI、PTs及びPEDOTからなる群から選択されるいずれかの樹脂で形成されることを特徴とする請求項4に記載の微小電気機械システムセンサー。
- 前記炭素ナノチューブ層の前記炭素ナノチューブが、カルボキシル基およびヒドロキシ基で機能化され、水溶液中で水素イオンが放出されて負電荷を有するように形成されることを特徴とする請求項4に記載の微小電気機械システムセンサー。
- 前記下部高分子電解質膜が、PAHとPSSとが交互に積層されてなり、前記炭素ナノチューブ層と接する前記下部高分子電解質膜の最上層がPAHで形成されることを特徴とする請求項6に記載の微小電気機械システムセンサー。
- 前記上部高分子電解質膜が、PAHとPSSとが交互に積層されてなり、前記炭素ナノチューブ層と接する前記上部高分子電解質膜の最下層はPAHで形成されることを特徴とする請求項6に記載の微小電気機械システムセンサー。
- 前記下部高分子電解質膜及び上部高分子電解質膜は、担持自己組立て方法またはスピン自己組立て方法で形成されることを特徴とする請求項4に記載の微小電気機械システムセンサー。
- 前記導電性ナノ薄膜が、前記炭素ナノチューブ層の上面に銅、金、銀、及び白金からなる群から選択されるいずれかの金属で形成される上部金属層を更に含むことを特徴とする請求項1に記載の微小電気機械システムセンサー。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/KR2008/001883 WO2009123371A1 (en) | 2008-04-03 | 2008-04-03 | The conductive nanomembrane, and mems sensor of using the same |
Publications (2)
Publication Number | Publication Date |
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JP2010536710A JP2010536710A (ja) | 2010-12-02 |
JP5242688B2 true JP5242688B2 (ja) | 2013-07-24 |
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JP2010522781A Expired - Fee Related JP5242688B2 (ja) | 2008-04-03 | 2008-04-03 | 導電性ナノ薄膜およびこれを利用した微細電気機械システムセンサー |
Country Status (4)
Country | Link |
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US (1) | US8338897B2 (ja) |
JP (1) | JP5242688B2 (ja) |
CN (1) | CN101801839B (ja) |
WO (1) | WO2009123371A1 (ja) |
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---|---|---|---|---|
US9305735B2 (en) | 2007-09-28 | 2016-04-05 | Brigham Young University | Reinforced polymer x-ray window |
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