JP5242644B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP5242644B2 JP5242644B2 JP2010194089A JP2010194089A JP5242644B2 JP 5242644 B2 JP5242644 B2 JP 5242644B2 JP 2010194089 A JP2010194089 A JP 2010194089A JP 2010194089 A JP2010194089 A JP 2010194089A JP 5242644 B2 JP5242644 B2 JP 5242644B2
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- semiconductor memory
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Credit Cards Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Non-Volatile Memory (AREA)
Description
まず、半導体記憶装置の概略構成について説明する。図1は、第1の実施の形態にかかる半導体記憶装置の外観を示す平面図である。図2は、図1に示す半導体記憶装置の外観を示す底面図である。図3は、図1に示す半導体記憶装置の内部構成を模式的に示す平面図である。図4は、図3に示す半導体記憶装置のA−A線に沿った断面構造を示す横断面図である。半導体記憶装置10は、パーソナルコンンピュータやデジタルカメラなどの外部機器に設けられたソケットに挿入されて用いられる。半導体記憶装置10は、外部記憶装置として機能する。なお、半導体記憶装置10の挿入方向は、矢印Xで示す方向とする。
図11は、第2の実施の形態に係る半導体記憶装置の内部構成を模式的に示す平面図である。上記実施の形態と同様の構成については、同様の符号を付して詳細な説明を省略する。本実施の形態に係る半導体記憶装置50は、電子部品17、電子部品用プレート(プレート)29を備える。
図13は、第3の実施の形態に係る半導体記憶装置の内部構成を模式的に示す平面図である。図14は、図13に示す半導体記憶装置の底面図である。図15は、図13に示すC−C線に沿った断面構造を示す横断面図である。上記実施の形態と同様の構成については、同様の符号を付して詳細な説明を省略する。
図17は、第4の実施の形態に係る半導体記憶装置の内部構成を模式的に示す平面図である。図18は、図17に示す半導体記憶装置の底面図である。図19は、図17に示すD−D線に沿った断面構造を示す横断面図である。なお、図17では、半導体メモリチップ15を透過状態で図示している。上記実施の形態と同様の構成については、同様の符号を付して詳細な説明を省略する。
図20は、第5の実施の形態に係る半導体記憶装置の外観を示す平面図である。図21は、図20に示す半導体記憶装置の側面図である。図22は、図20に示す半導体記憶装置の外観を示す底面図である。図23は、図20に示す半導体記憶装置の内部構成を模式的に示す図である。図24は、図23に示す半導体記憶装置のE−E線に沿った断面構造を示す横断面図である。上記実施の形態と同様の構成については、同様の符号を付して詳細な説明を省略する。
Claims (4)
- 半導体メモリチップを樹脂モールド部でモールドした半導体記憶装置であって、
前記樹脂モールド部にモールドされて前記半導体メモリチップが載置されるプレートと、
前記半導体記憶装置の外周面に露出される外部接続端子と、を備え、
前記プレートは、前記樹脂モールド部の外周面に露出する複数の露出部を有し、
前記複数の露出部同士は、前記樹脂モールド部の内部で互いに電気的に絶縁されることを特徴とする半導体記憶装置。 - 前記プレートは、前記樹脂モールド部の内部で複数に分割され、分割された前記プレートごとに1の露出部を有することを特徴とする請求項1に記載の半導体記憶装置。
- 前記外部接続端子と前記露出部とは、前記樹脂モールド部の内部で互いに電気的に絶縁されることを特徴とする請求項1または2に記載の半導体記憶装置。
- 前記プレートは、絶縁性材料で構成されていることを特徴とする請求項1に記載の半導体記憶装置。
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JP2010194089A JP5242644B2 (ja) | 2010-08-31 | 2010-08-31 | 半導体記憶装置 |
US13/051,405 US8581372B2 (en) | 2010-08-31 | 2011-03-18 | Semiconductor storage device and a method of manufacturing the semiconductor storage device |
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JP2010194089A JP5242644B2 (ja) | 2010-08-31 | 2010-08-31 | 半導体記憶装置 |
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Families Citing this family (27)
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JP5032623B2 (ja) * | 2010-03-26 | 2012-09-26 | 株式会社東芝 | 半導体記憶装置 |
JP2012212417A (ja) | 2011-03-24 | 2012-11-01 | Toshiba Corp | 半導体メモリカード |
US20130286603A1 (en) * | 2012-04-30 | 2013-10-31 | Takashi Okada | Memory card and sd card |
JP5740372B2 (ja) | 2012-09-12 | 2015-06-24 | 株式会社東芝 | 半導体メモリカード |
US9142477B2 (en) * | 2013-03-08 | 2015-09-22 | Kabushiki Kaisha Toshiba | Semiconductor module |
JP2015130492A (ja) * | 2013-12-05 | 2015-07-16 | ローム株式会社 | 半導体モジュール |
USD730908S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD730910S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD730907S1 (en) * | 2014-05-02 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD727913S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD729251S1 (en) * | 2014-06-27 | 2015-05-12 | Samsung Electronics Co., Ltd. | Memory card |
USD727912S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD727911S1 (en) * | 2014-06-27 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD730909S1 (en) * | 2014-06-27 | 2015-06-02 | Samsung Electronics Co., Ltd. | Memory card |
USD736212S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
USD736214S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
USD736215S1 (en) * | 2014-07-01 | 2015-08-11 | Samsung Electronics Co., Ltd. | Memory card |
KR102284654B1 (ko) | 2014-07-02 | 2021-08-03 | 삼성전자 주식회사 | 메모리 카드 |
USD727910S1 (en) * | 2014-07-02 | 2015-04-28 | Samsung Electronics Co., Ltd. | Memory card |
USD798868S1 (en) * | 2015-08-20 | 2017-10-03 | Isaac S. Daniel | Combined subscriber identification module and storage card |
USD773466S1 (en) * | 2015-08-20 | 2016-12-06 | Isaac S. Daniel | Combined secure digital memory and subscriber identity module |
USD783621S1 (en) * | 2015-08-25 | 2017-04-11 | Samsung Electronics Co., Ltd. | Memory card |
USD783622S1 (en) * | 2015-08-25 | 2017-04-11 | Samsung Electronics Co., Ltd. | Memory card |
USD773467S1 (en) * | 2015-11-12 | 2016-12-06 | Samsung Electronics Co., Ltd. | Memory card |
USD772232S1 (en) * | 2015-11-12 | 2016-11-22 | Samsung Electronics Co., Ltd. | Memory card |
JP2020003875A (ja) * | 2018-06-25 | 2020-01-09 | キオクシア株式会社 | 半導体記憶装置 |
KR20220037076A (ko) | 2020-09-17 | 2022-03-24 | 삼성전자주식회사 | 연결 단자들을 갖는 메모리 카드 |
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JP2003046053A (ja) * | 2001-07-27 | 2003-02-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP4171246B2 (ja) | 2002-06-10 | 2008-10-22 | 株式会社ルネサステクノロジ | メモリカードおよびその製造方法 |
US7245007B1 (en) * | 2003-09-18 | 2007-07-17 | Amkor Technology, Inc. | Exposed lead interposer leadframe package |
JP5355867B2 (ja) * | 2007-07-10 | 2013-11-27 | ローム株式会社 | 集積回路素子 |
JPWO2011121756A1 (ja) * | 2010-03-31 | 2013-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US20120049378A1 (en) | 2012-03-01 |
US8581372B2 (en) | 2013-11-12 |
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