JP5241109B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP5241109B2 JP5241109B2 JP2007022976A JP2007022976A JP5241109B2 JP 5241109 B2 JP5241109 B2 JP 5241109B2 JP 2007022976 A JP2007022976 A JP 2007022976A JP 2007022976 A JP2007022976 A JP 2007022976A JP 5241109 B2 JP5241109 B2 JP 5241109B2
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- JP
- Japan
- Prior art keywords
- mosfet
- terminal
- pad
- gate
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 65
- 238000010586 diagram Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Description
20 P基板
21 ディープNウェル
22 Nウェル
23 Pウェル
24、25a、25b、26a、26b、27a、27b N+拡散層
28、29、30 ゲート電極
31、31a、31b P+拡散層
32、32a、32b 配線
M1、M1a、M2、M3 n型MOSFET
PAD パッド
R 抵抗
Claims (11)
- 入力信号用または出力信号用のパッドと、
前記パッドと所定電位の電源配線間に接続され、ゲート端子およびバックゲートを共通に接続する第1のMOSFETと、
前記第1のMOSFETと同一の導電型であって、ゲート端子を前記パッドに接続し、第1の端子およびバックゲートを前記第1のMOSFETのゲート端子およびバックゲートに接続し、第2の端子を前記電源配線に接続する第2のMOSFETと、
を備えることを特徴とする半導体集積回路装置。 - 前記第1のMOSFETは、閾値電圧がpn接合順方向電圧より大きくなるように構成されることを特徴とする請求項1記載の半導体集積回路装置。
- 前記第1のMOSFETと同一の導電型であって、ゲート端子を前記電源配線に接続し、第1の端子およびバックゲートを前記第1のMOSFETのゲート端子およびバックゲートに接続し、第2の端子を前記パッドに接続する第3のMOSFETをさらに備えることを特徴とする請求項1記載の半導体集積回路装置。
- 入力信号用または出力信号用のパッドと、
前記パッドと電位V0の電源配線間に接続され、ゲート端子およびバックゲートを共通に接続する第1のMOSFETと、
前記第1のMOSFETのゲート端子およびバックゲートに接続し、前記第1のMOSFETのゲート端子およびバックゲートの電位Vbを前記パッドの電位Vinに基づいて制御する電位制御回路と、
を備え、
前記電位制御回路は、Vthを正の所定の電位とし、
前記第1のMOSFETがn型である場合、Vin≧V0+VthにおいてVb=V0とし、Vin<V0−VthにおいてVb=Vinとするように制御し、
前記第1のMOSFETがp型である場合、Vin≧V0+VthにおいてVb=Vinとし、Vin<V0−VthにおいてVb=V0とするように制御することを特徴とする半導体集積回路装置。 - 前記電位制御回路は、前記第1のMOSFETと同一の導電型である第2および第3のMOSFETを備え、
前記第1のMOSFETは、ゲート端子およびバックゲートを、前記第2および第3のMOSFETのそれぞれのバックゲートおよび第1の端子に接続し、
前記第2のMOSFETは、第2の端子を前記電源配線に接続し、ゲート端子を前記パッドに接続し、
前記第3のMOSFETは、第2の端子を前記パッドに接続し、ゲート端子を前記電源配線に接続することを特徴とする請求項4記載の半導体集積回路装置。 - 前記第2のMOSFETのゲート端子と前記パッドとの間に抵抗素子を挿入することを特徴とする請求項1または5記載の半導体集積回路装置。
- 前記第1、第2および第3のMOSFETは、同一のウェル領域内に配設されることを特徴とする請求項3または5記載の半導体集積回路装置。
- 前記第1のMOSFETにおける第2の端子に係る拡散領域と、前記第2のMOSFETにおける第2の端子に係る拡散領域とは、共通の領域であることを特徴とする請求項7記載の半導体集積回路装置。
- 前記第1のMOSFETにおける第1の端子に係る拡散領域と、前記第3のMOSFETにおける第2の端子に係る拡散領域とは、共通の領域であることを特徴とする請求項7または8記載の半導体集積回路装置。
- 前記第2のMOSFETにおける第1の端子に係る拡散領域と、前記第3のMOSFETにおける第1の端子に係る拡散領域とは、共通の領域であることを特徴とする請求項7乃至9のいずれか一に記載の半導体集積回路装置。
- 前記第1および第2のMOSFETは、同一のウェル領域内に配設されることを特徴とする請求項1記載の半導体集積回路装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007022976A JP5241109B2 (ja) | 2007-02-01 | 2007-02-01 | 半導体集積回路装置 |
US12/010,991 US8008727B2 (en) | 2007-02-01 | 2008-01-31 | Semiconductor integrated circuit device including a pad and first mosfet |
CN200810005361XA CN101236965B (zh) | 2007-02-01 | 2008-02-01 | 半导体集成电路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007022976A JP5241109B2 (ja) | 2007-02-01 | 2007-02-01 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008192687A JP2008192687A (ja) | 2008-08-21 |
JP5241109B2 true JP5241109B2 (ja) | 2013-07-17 |
Family
ID=39675417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007022976A Active JP5241109B2 (ja) | 2007-02-01 | 2007-02-01 | 半導体集積回路装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8008727B2 (ja) |
JP (1) | JP5241109B2 (ja) |
CN (1) | CN101236965B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5486962B2 (ja) * | 2009-04-28 | 2014-05-07 | 株式会社メガチップス | 半導体集積回路 |
JP5613488B2 (ja) * | 2010-07-22 | 2014-10-22 | 株式会社メガチップス | 過電圧保護回路 |
US10177940B1 (en) * | 2017-06-20 | 2019-01-08 | Cadence Design Systems, Inc. | System and method for data transmission |
CN109286181B (zh) * | 2017-07-21 | 2022-06-28 | 苏州瀚宸科技有限公司 | 电源钳位esd保护电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07147381A (ja) | 1993-11-24 | 1995-06-06 | Matsushita Electric Ind Co Ltd | 静電破壊保護回路 |
JP2914292B2 (ja) * | 1996-04-25 | 1999-06-28 | 日本電気株式会社 | 半導体装置 |
US6174842B1 (en) * | 1999-03-30 | 2001-01-16 | Ethyl Corporation | Lubricants containing molybdenum compounds, phenates and diarylamines |
JP2000307070A (ja) * | 1999-04-22 | 2000-11-02 | Fujitsu Ltd | 保護回路を有する半導体装置 |
US6429491B1 (en) * | 1999-10-20 | 2002-08-06 | Transmeta Corporation | Electrostatic discharge protection for MOSFETs |
JP3389174B2 (ja) * | 1999-10-27 | 2003-03-24 | エヌイーシーマイクロシステム株式会社 | 入力保護回路 |
US6399990B1 (en) * | 2000-03-21 | 2002-06-04 | International Business Machines Corporation | Isolated well ESD device |
JP2001351988A (ja) * | 2000-06-05 | 2001-12-21 | Toshiba Microelectronics Corp | 保護回路 |
JP2002231886A (ja) * | 2001-01-31 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Esd保護回路および半導体集積回路装置 |
-
2007
- 2007-02-01 JP JP2007022976A patent/JP5241109B2/ja active Active
-
2008
- 2008-01-31 US US12/010,991 patent/US8008727B2/en active Active
- 2008-02-01 CN CN200810005361XA patent/CN101236965B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8008727B2 (en) | 2011-08-30 |
JP2008192687A (ja) | 2008-08-21 |
CN101236965B (zh) | 2011-05-11 |
US20080185653A1 (en) | 2008-08-07 |
CN101236965A (zh) | 2008-08-06 |
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