JP5237600B2 - 表示装置およびその製造方法 - Google Patents

表示装置およびその製造方法 Download PDF

Info

Publication number
JP5237600B2
JP5237600B2 JP2007222696A JP2007222696A JP5237600B2 JP 5237600 B2 JP5237600 B2 JP 5237600B2 JP 2007222696 A JP2007222696 A JP 2007222696A JP 2007222696 A JP2007222696 A JP 2007222696A JP 5237600 B2 JP5237600 B2 JP 5237600B2
Authority
JP
Japan
Prior art keywords
substrate
light emitting
organic
insulating film
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007222696A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009054539A (ja
Inventor
一司 山吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2007222696A priority Critical patent/JP5237600B2/ja
Priority to KR1020080077769A priority patent/KR20090023108A/ko
Publication of JP2009054539A publication Critical patent/JP2009054539A/ja
Application granted granted Critical
Publication of JP5237600B2 publication Critical patent/JP5237600B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007222696A 2007-08-29 2007-08-29 表示装置およびその製造方法 Expired - Fee Related JP5237600B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007222696A JP5237600B2 (ja) 2007-08-29 2007-08-29 表示装置およびその製造方法
KR1020080077769A KR20090023108A (ko) 2007-08-29 2008-08-08 표시장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007222696A JP5237600B2 (ja) 2007-08-29 2007-08-29 表示装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2009054539A JP2009054539A (ja) 2009-03-12
JP5237600B2 true JP5237600B2 (ja) 2013-07-17

Family

ID=40505430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007222696A Expired - Fee Related JP5237600B2 (ja) 2007-08-29 2007-08-29 表示装置およびその製造方法

Country Status (2)

Country Link
JP (1) JP5237600B2 (ko)
KR (1) KR20090023108A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021176610A1 (ja) * 2020-03-04 2021-09-10 シャープ株式会社 表示装置、表示装置の製造方法
WO2024005600A1 (ko) * 2022-07-01 2024-01-04 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4679187B2 (ja) * 2004-03-26 2011-04-27 株式会社半導体エネルギー研究所 発光装置の作製方法
KR100615226B1 (ko) * 2004-06-24 2006-08-25 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법, 디스플레이 장치의제조방법, 이에 따라 제조된 디스플레이 장치, 능동구동형 전계발광 소자의 제조방법 및 이에 따라 제조된능동 구동형 전계발광 소자

Also Published As

Publication number Publication date
KR20090023108A (ko) 2009-03-04
JP2009054539A (ja) 2009-03-12

Similar Documents

Publication Publication Date Title
JP6517272B2 (ja) 発光装置
CN106653796B (zh) 有机发光显示装置
JP6211873B2 (ja) 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
TWI524514B (zh) 有機發光顯示裝置之製造方法
JP5964807B2 (ja) フレキシブル有機電界発光装置及びその製造方法
US9012271B2 (en) Thin film transistor array substrate and method of manufacturing the same
WO2012077682A1 (ja) 半導体装置および表示装置
WO2012046658A1 (ja) 半導体装置、表示装置、ならびに半導体装置および表示装置の製造方法
US8624256B2 (en) Display device
KR102385339B1 (ko) 표시 장치 및 그 제조 방법
WO2019012769A1 (ja) 表示装置、および表示装置の製造方法
US11139363B2 (en) Display device for preventing cracks caused by bending stress and apparatus for manufacturing the same for reducing number of mask process
JP2006286600A (ja) 発光表示装置及び発光表示装置の製造方法
US7612377B2 (en) Thin film transistor array panel with enhanced storage capacitors
KR101407814B1 (ko) 표시 장치 및 표시 장치의 제조 방법
JP2009205941A (ja) 表示装置の製造方法、表示装置、照明装置の製造方法および照明装置
US8829517B2 (en) Substrate, method for fabricating the same, and display device
JP6223070B2 (ja) 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
JP5241966B2 (ja) 半導体装置、ｔｆｔ基板、ならびに半導体装置およびｔｆｔ基板の製造方法
KR100852252B1 (ko) 표시장치 및 그 제조 방법
JP5237600B2 (ja) 表示装置およびその製造方法
US10559643B2 (en) Display device including a preventing film formed in the terminal region
JP5302532B2 (ja) 表示装置及びその製造方法
KR102119572B1 (ko) 박막 트랜지스터 어레이 기판 및 그 제조 방법
JP4278244B2 (ja) Ｅｌ表示装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100726

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120319

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121009

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130319

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130329

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160405

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees