JP5235809B2 - 高い熱伝導率を有する炭化珪素 - Google Patents
高い熱伝導率を有する炭化珪素 Download PDFInfo
- Publication number
- JP5235809B2 JP5235809B2 JP2009176358A JP2009176358A JP5235809B2 JP 5235809 B2 JP5235809 B2 JP 5235809B2 JP 2009176358 A JP2009176358 A JP 2009176358A JP 2009176358 A JP2009176358 A JP 2009176358A JP 5235809 B2 JP5235809 B2 JP 5235809B2
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- Prior art keywords
- sic
- thermal conductivity
- silicon carbide
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- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 124
- 229910010271 silicon carbide Inorganic materials 0.000 title description 109
- 238000000151 deposition Methods 0.000 claims description 58
- 230000008021 deposition Effects 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 39
- 238000005229 chemical vapour deposition Methods 0.000 claims description 38
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 27
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 239000000376 reactant Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 vacancies Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Description
K=Cvl/3
式中、Kは熱伝導率であり、Cは容積熱容量であり、vはキャリア速度であり、lは熱を運ぶフォノンの衝突に依存する平均自由行路である。平均自由行路はまた、電子、合金元素、不純物、空孔、結晶欠陥、弾性および光学的不連続性などによっても影響を受ける。平均自由行路に影響を及ぼす結晶欠陥はまた前記のような積層欠陥も包含する。したがって、SiCの積層欠陥を制御することにより、熱伝導率も制御することができる。
12 三角形セル
14、16、18 壁
20 化学蒸着三角形セルカバープレート
22 真空ファーネス
24 外壁
26 カバープレート
28 ベースプレート
30 発熱体
32 反応ガス
34 インレットチューブ
36 頂部
38 インジェクター
40 中心
42 堆積ゾーン
44 排気口
46 中心
48 端部
50 堆積物質
52 堆積管
54 底部
56 サポート
62 化学蒸着システム
64 バブラーチャンバー
66 バルブ
68 フローライン
70 フローライン
72 バルブ
74 フローライン
76 バルブ
78 インジェクター
80 フィルター
82 フローライン
84 真空ポンプ
88 スクラバー
Claims (5)
- a)堆積チャンバー内の反応物質の流れが少なくとも1つのマンドレルの表面と平行になるように、該少なくとも1つのマンドレルが堆積チャンバー内に配置されるように、化学蒸着チャンバー内に、該少なくとも1つのマンドレルを配置し、ここで堆積チャンバーが100torr〜300torrの圧力を有し;
b)水素ガスおよびメチルトリクロロシランガスを含む反応物質が堆積チャンバー内でβ相多結晶炭化珪素を形成するように、反応物質を堆積チャンバー内に生じさせ、ここで水素ガス/メチルトリクロロシランガス分圧流量比が4〜10であり及び水素ガスの流量が55slpm〜75slpmであり、メチルトリクロロシランガスの流量が10slpm〜15slpmであり;
c)堆積チャンバーの温度を1350℃より高く1450℃までに維持し;さらに
d)β相多結晶炭化珪素を、該少なくとも1つのマンドレルの表面上に0.1μm/分〜3.0μm/分の速度で170時間〜200時間堆積させて、少なくとも375W/mKの熱伝導率及び0.10より小さい結晶秩序比を有するβ相多結晶炭化珪素を形成させ、β相多結晶炭化珪素が、堆積チャンバー内で、気体状反応物質供給源から50cm〜140cmの間の少なくとも1つのマンドレル上に堆積されることを含む、高い熱伝導率および低い積層欠陥を有するβ相多結晶炭化珪素の製造方法。 - β相多結晶炭化珪素を少なくとも1つのマンドレルの表面上に1.5μm/分の速度で堆積させる請求項1記載の方法。
- 少なくとも1つのマンドレルが1355℃〜1370℃の温度を有する請求項1記載の方法。
- β相多結晶炭化珪素が375W/mK〜390W/mKの熱伝導率を有する請求項1記載の方法。
- 結晶秩序比が0.05〜0.01である請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24726700P | 2000-11-10 | 2000-11-10 | |
US60/247267 | 2000-11-10 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001346030A Division JP2002302768A (ja) | 2000-11-10 | 2001-11-12 | 高い熱伝導率を有する炭化珪素 |
Related Child Applications (1)
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JP2013016694A Division JP2013100608A (ja) | 2000-11-10 | 2013-01-31 | 高い熱伝導率を有する炭化珪素 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009280495A JP2009280495A (ja) | 2009-12-03 |
JP5235809B2 true JP5235809B2 (ja) | 2013-07-10 |
Family
ID=22934273
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001346030A Pending JP2002302768A (ja) | 2000-11-10 | 2001-11-12 | 高い熱伝導率を有する炭化珪素 |
JP2009176358A Expired - Lifetime JP5235809B2 (ja) | 2000-11-10 | 2009-07-29 | 高い熱伝導率を有する炭化珪素 |
JP2013016694A Pending JP2013100608A (ja) | 2000-11-10 | 2013-01-31 | 高い熱伝導率を有する炭化珪素 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001346030A Pending JP2002302768A (ja) | 2000-11-10 | 2001-11-12 | 高い熱伝導率を有する炭化珪素 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013016694A Pending JP2013100608A (ja) | 2000-11-10 | 2013-01-31 | 高い熱伝導率を有する炭化珪素 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6811761B2 (ja) |
EP (1) | EP1205573A1 (ja) |
JP (3) | JP2002302768A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
JP4113971B2 (ja) * | 2002-07-30 | 2008-07-09 | 株式会社豊田自動織機 | 低膨張材料及びその製造方法 |
US8093713B2 (en) * | 2007-02-09 | 2012-01-10 | Infineon Technologies Ag | Module with silicon-based layer |
US8105649B1 (en) | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
AU2008335680B2 (en) * | 2007-12-12 | 2013-11-21 | Sk Siltron Css, Llc | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
KR101916270B1 (ko) * | 2011-06-24 | 2018-11-07 | 엘지이노텍 주식회사 | 실리콘 카바이드 파우더의 제조방법 |
EP2896718A4 (en) * | 2012-08-17 | 2016-04-06 | Ihi Corp | METHOD FOR PRODUCING A HEAT-RESISTANT COMPOSITE MATERIAL AND MANUFACTURING DEVICE |
JP7077288B2 (ja) * | 2019-09-27 | 2022-05-30 | 東海カーボン株式会社 | 多結晶SiC成形体 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2620273B1 (fr) | 1987-09-03 | 1991-10-18 | France Etat Armement | Dispositif pour former et faire circuler un electrolyte liquide dans une pile alcaline amorcable |
US5374412A (en) * | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
TW337513B (en) | 1992-11-23 | 1998-08-01 | Cvd Inc | Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof |
US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US6077619A (en) * | 1994-10-31 | 2000-06-20 | Sullivan; Thomas M. | Polycrystalline silicon carbide ceramic wafer and substrate |
US5618594A (en) * | 1995-04-13 | 1997-04-08 | Cvd, Incorporated | Composite thermocouple protection tubes |
JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
US6228297B1 (en) | 1998-05-05 | 2001-05-08 | Rohm And Haas Company | Method for producing free-standing silicon carbide articles |
US6280496B1 (en) | 1998-09-14 | 2001-08-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide based composite material and manufacturing method thereof |
US6464912B1 (en) * | 1999-01-06 | 2002-10-15 | Cvd, Incorporated | Method for producing near-net shape free standing articles by chemical vapor deposition |
US7018947B2 (en) * | 2000-02-24 | 2006-03-28 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
-
2001
- 2001-11-09 US US10/035,877 patent/US6811761B2/en not_active Expired - Lifetime
- 2001-11-09 EP EP01309480A patent/EP1205573A1/en not_active Withdrawn
- 2001-11-12 JP JP2001346030A patent/JP2002302768A/ja active Pending
-
2004
- 2004-08-02 US US10/909,667 patent/US7438884B2/en not_active Expired - Lifetime
-
2009
- 2009-07-29 JP JP2009176358A patent/JP5235809B2/ja not_active Expired - Lifetime
-
2013
- 2013-01-31 JP JP2013016694A patent/JP2013100608A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2002302768A (ja) | 2002-10-18 |
JP2013100608A (ja) | 2013-05-23 |
US6811761B2 (en) | 2004-11-02 |
JP2009280495A (ja) | 2009-12-03 |
US7438884B2 (en) | 2008-10-21 |
US20020106535A1 (en) | 2002-08-08 |
US20050000412A1 (en) | 2005-01-06 |
EP1205573A1 (en) | 2002-05-15 |
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