JP5232013B2 - フラッシュメモリにおける誤り訂正のための方法およびシステム - Google Patents
フラッシュメモリにおける誤り訂正のための方法およびシステム Download PDFInfo
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Description
仮出願第60/760,622号(発明の名称:「フラッシュメモリ−誤り訂正−」、出願日:2006年1月20日)
仮出願第60/761,888号(発明の名称:「符号化および信号処理に基づくフラッシュメモリの記憶容量の拡大」、出願日:2006年1月25日)
仮出願第60/771,621号(発明の名称:「符号化および信号処理に基づくフラッシュメモリの記憶容量の拡大」、出願日:2006年2月8日)
なお、本出願に対応する外国の特許出願においては下記の文献が発見または提出されている。
[項目1]
第1のデジタルレベル数を用いてそれぞれデータを格納する複数のメモリセルを有する多重レベル固体不揮発性メモリアレイ用のコントローラであって、
第1のデータビット列を符号化して符号化データビット列を供給する手段と、
上記符号化データビット列を変換してデータシンボル列を得る手段と、
上記多重レベル固体不揮発性メモリアレイが有するメモリセルに上記データシンボル列を格納する手段と、
上記データシンボル列を取り出す手段と、
取り出された上記データシンボル列を復号して、上記メモリセルに上記データシンボル列を格納するのに用いられた上記第1のデジタルレベル数より多い第2のデジタルレベル数で特徴付けられる出力データシンボル列を供給する手段と、を備えるコントローラ。
[項目2]
上記第1のデータビット列を生成するべく第2のデータビット列を符号化する手段と、
上記出力データシンボル列を復号する手段と、をさらに備える、項目1に記載のコントローラ。
[項目3]
上記第1のデータビット列の符号化は第1のECC技術に従って実行され、上記第2のデータビット列の符号化は第2のECC技術に従って実行される、項目2に記載のコントローラ。
[項目4]
上記第1のECC技術と上記第2のECC技術は異なる、項目3に記載のコントローラ。
[項目5]
上記多重レベル固体不揮発性メモリアレイは1以上のフラッシュEEPROM(登録商標)アレイを含む、項目1に記載のコントローラ。
[項目6]
上記データシンボルと対応付けられたソフト情報を処理する手段、をさらに備える項目1に記載のコントローラ。
Claims (38)
- 第1のデジタルレベル数を用いてデータを格納する複数のメモリセルを有する多重レベル固体不揮発性メモリアレイと、
前記多重レベル固体不揮発性メモリアレイに格納するデータを生成する第1の符号器と、
前記多重レベル固体不揮発性メモリアレイが有する前記複数のメモリセルのそれぞれに格納されている前記データを受け取り、前記データに基づいて、前記データの格納に用いられた前記第1のデジタルレベル数よりも多い第2のデジタルレベル数で特徴付けられる、それぞれの前記データのデジタル信号を出力する、アナログ/デジタルコンバータと
を備え、
複数のデジタルレベルのうちの第1のレベルに対してプログラミングされた前記複数のメモリセルの電圧は、第1の分布の幅を有する第1の確率分布関数によって特徴づけられ、
複数のデジタルレベルのうちの第2のレベルに対してプログラミングされた前記複数のメモリセルの電圧は、第2の分布の幅を有する第2の確率分布関数によって特徴づけられ、
前記第1の分布の幅は前記第2の分布の幅よりも広く、
前記第1の符号器は、前記第2のレベルのデータの頻度に比べて、前記第1のレベルのデータの頻度を低減させる、固体不揮発性メモリユニット。 - 前記多重レベル固体不揮発性メモリアレイはフラッシュEEPROM(登録商標)アレイである
請求項1に記載の固体不揮発性メモリユニット。 - 前記固体不揮発性メモリユニットは集積回路内に配設されている
請求項1または2に記載の固体不揮発性メモリユニット。 - 前記固体不揮発性メモリアレイから取り出されたデータを復号する第1の復号器
をさらに備える請求項1から3のいずれか1項に記載の固体不揮発性メモリユニット。 - 前記第1の符号器と通信する第2の符号器と、
前記第1の復号器と通信する第2の復号器と
をさらに備える請求項4に記載の固体不揮発性メモリユニット。 - 前記第1の符号器は第1のECC技術を実行して、前記第2の符号器は第2のECC技術を実行する
請求項5に記載の固体不揮発性メモリユニット。 - 前記第1のECC技術と前記第2のECC技術は異なる
請求項6に記載の固体不揮発性メモリユニット。 - 前記第2の符号器はリードソロモン符号器を含む
請求項5に記載の固体不揮発性メモリユニット。 - 前記第1の符号器により供給された符号化データを変調する変調器と、
前記固体不揮発性メモリアレイから取り出された、変調された前記データを復調する復調器と
をさらに備える、請求項1から8のいずれか1項に記載の固体不揮発性メモリユニット。 - 前記第1の符号器および前記変調器はどちらも、トレリス符号化変調器を含む
請求項9に記載の固体不揮発性メモリユニット。 - 前記第1の符号器は2進符号器である
請求項1から10のいずれか1項に記載の固体不揮発性メモリユニット。 - 前記第1の符号器は畳み込み符号器である
請求項1から10のいずれか1項に記載の固体不揮発性メモリユニット。 - 前記第1の符号器は反復符号器である
請求項1から10のいずれか1項に記載の固体不揮発性メモリユニット。 - 第1のデータを含むデータストリームを生成する段階と、
多重レベル固体不揮発性メモリアレイが有するメモリセルに、第1のデジタルレベル数を用いて前記第1のデータを含む前記データストリームを格納する段階と、
前記メモリアレイが有する前記メモリセルから格納されている前記第1のデータを含む前記データストリームを取り出す段階と、
前記取り出したデータストリームに含まれるデータを、前記第1のデジタルレベル数よりも多い第2のデジタルレベル数にデジタル化する段階と
を備え、
複数のデジタルレベルのうちの第1のレベルに対してプログラミングされた前記多重レベル固体不揮発性メモリアレイが有する複数のメモリセルの電圧は、第1の分布の幅を有する第1の確率分布関数によって特徴付けられ、
複数のデジタルレベルのうちの第2のレベルに対してプログラミングされた前記複数のメモリセルの電圧は、第2の分布の幅を有する第2の確率分布関数によって特徴付けられ、
前記第1の分布の幅は前記第2の分布の幅よりも広く、
前記データストリームを生成することは、前記データストリームの第2のレベルのデータの頻度に比べて前記データストリームの第1のレベルのデータの頻度を低減させる、固体不揮発性メモリユニットを操作する方法。 - 前記多重レベル固体不揮発性メモリアレイはフラッシュEEPROM(登録商標)アレイである
請求項14に記載の方法。 - 前記固体不揮発性メモリユニットは集積回路内に配設されている
請求項14または15に記載の方法。 - 前記取り出したデータストリームに含まれるデータを復号する段階
をさらに備え、
前記データストリームを生成する段階は、第2のデータストリームを符号化する段階を含む、
請求項14に記載の方法。 - 前記第2のデータストリームを生成するべく第3のデータを符号化する段階と、
前記第2のデータストリームを再生成するべく、復号された前記取り出されたデータを復号する段階と
をさらに備える請求項17に記載の方法。 - 前記第2のデータストリームの符号化は第1のECC技術に従って実行され、前記第3のデータの符号化は第2のECC技術に従って実行される
請求項18に記載の方法。 - 前記第1のECC技術と前記第2のECC技術は異なる
請求項19に記載の方法。 - 前記第3のデータを符号化する段階は、リードソロモン符号化技術を実行する段階を含む
請求項18に記載の方法。 - 符号化された前記第1のデータを変調する段階と、
前記多重レベル固体不揮発性メモリアレイに変調された前記データストリームを格納する段階と、
前記多重レベル固体不揮発性メモリアレイから、変調された前記データストリームを取り出す段階と、
前記多重レベル固体不揮発性メモリアレイから取り出された前記データストリームを復調する段階と
をさらに備える請求項17に記載の方法。 - 前記符号化および前記変調はどちらも、トレリス符号化変調の実行を含む
請求項22に記載の方法。 - 前記第2のデータストリームの符号化は、2進符号化技術に従って実行される
請求項17に記載の方法。 - 前記第2のデータストリームの符号化は、畳み込み符号化技術に従って実行される
請求項17に記載の方法。 - 前記第2のデータストリームの符号化は、反復符号化技術に従って実行される
請求項17に記載の方法。 - 第1のデジタルレベル数を用いてそれぞれデータを格納する複数のメモリセルを有する多重レベル固体不揮発性メモリアレイ用のコントローラであって、
データビット列を受け取り、符号化データビット列を供給する第1の符号器と、
前記符号化データビット列を、前記多重レベル固体不揮発性メモリアレイが有するメモリセルでの格納用のデータシンボル列へと変換するマッパと、
前記多重レベル固体不揮発性メモリアレイが有するメモリセルに格納されているデータシンボル列に基づく電圧信号列を受け取り、前記メモリセルに前記データシンボル列を格納するのに用いられた前記第1のデジタルレベル数より多い第2のデジタルレベル数で特徴付けられる出力データシンボル列を生成する第1の復号器と
を備え、
複数のデジタルレベルのうちの第1のレベルに対してプログラミングされた前記多重レベル固体不揮発性メモリアレイが有する複数のメモリセルの電圧は、第1の分布の幅を有する第1の確率分布関数によって特徴付けられ、
複数のデジタルレベルのうちの第2のレベルに対してプログラミングされた前記複数のメモリセルの電圧は、第2の分布の幅を有する第2の確率分布関数によって特徴付けられ、
前記第1の分布の幅は前記第2の分布の幅よりも大きく、
前記第1の符号器は、前記符号化データビット列の第2のレベルのデータの頻度に比べて前記符号化データビット列の第1のレベルのデータの頻度を低減させながら、前記符号化データビット列を生成する、コントローラ。 - 前記第1の符号器と通信する第2の符号器と、
前記第1の復号器と通信する第2の復号器と
をさらに備える請求項27に記載のコントローラ。 - 前記第1の符号器は第1のECC技術を実行して、前記第2の符号器は第2のECC技術を実行する
請求項28に記載のコントローラ。 - 前記第1のECC技術と前記第2のECC技術は異なる
請求項29に記載のコントローラ。 - 前記多重レベル固体不揮発性メモリアレイは1以上のフラッシュEEPROM(登録商標)アレイを含む
請求項27から30のいずれか1項に記載のコントローラ。 - 前記第1の復号器はソフト情報復号器を含む
請求項27から31のいずれか1項に記載のコントローラ。 - 第1のデジタルレベル数を用いてそれぞれデータを格納する複数のメモリセルを有する多重レベル固体不揮発性メモリアレイ用のコントローラを操作する方法であって、
符号化データビット列を供給するべく第1のデータビット列を符号化する段階と、
データシンボル列を得るべく前記符号化データビット列を変換する段階と、
前記多重レベル固体不揮発性メモリアレイが有するメモリセルに前記データシンボル列を格納する段階と、
前記データシンボル列を取り出す段階と、
取り出された前記データシンボル列を復号して、前記メモリセルに前記データシンボル列を格納するのに用いられた前記第1のデジタルレベル数より多い第2のデジタルレベル数で特徴付けられる出力データシンボル列を供給する段階と
を備え、
複数のデジタルレベルのうちの第1のレベルに対してプログラミングされた前記多重レベル固体不揮発性メモリアレイが有する複数のメモリセルの電圧は、第1の分布の幅を有する第1の確率分布関数によって特徴付けられ、
複数のデジタルレベルのうちの第2のレベルに対してプログラミングされた前記複数のメモリセルの電圧は、第2の分布の幅を有する第2の確率分布関数によって特徴付けられ、
前記第1の分布の幅は前記第2の分布の幅よりも広く、
前記第1のデータビット列を符号化する段階は、前記符号化データビット列の第2のレベルのデータの頻度に比べて前記符号化データビット列の第1のレベルのデータの頻度を低減する段階を含む、方法。 - 前記第1のデータビット列を生成するべく第2のデータビット列を符号化する段階と、
前記出力データシンボル列を復号する段階と
をさらに備える請求項33に記載の方法。 - 前記第1のデータビット列の符号化は第1のECC技術に従って実行され、前記第2のデータビット列の符号化は第2のECC技術に従って実行される
請求項34に記載の方法。 - 前記第1のECC技術と前記第2のECC技術は異なる
請求項35に記載の方法。 - 前記多重レベル固体不揮発性メモリアレイは1以上のフラッシュEEPROM(登録商標)アレイを含む
請求項33から36のいずれか1項に記載の方法。 - 前記データシンボルと関連付けられたソフト情報を処理する段階と
をさらに備える請求項33から37のいずれか1項に記載の方法。
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JP2014517976A (ja) * | 2011-05-12 | 2014-07-24 | マイクロン テクノロジー, インク. | メモリセルをプログラミングすること |
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TWI455137B (zh) | 2014-10-01 |
US8677215B2 (en) | 2014-03-18 |
EP1987519A2 (en) | 2008-11-05 |
US7844879B2 (en) | 2010-11-30 |
KR20080098040A (ko) | 2008-11-06 |
TW201126527A (en) | 2011-08-01 |
TW200737213A (en) | 2007-10-01 |
US20140201600A1 (en) | 2014-07-17 |
US20150058702A1 (en) | 2015-02-26 |
JP2009524176A (ja) | 2009-06-25 |
TWI367492B (en) | 2012-07-01 |
KR101410434B1 (ko) | 2014-07-02 |
US8473812B2 (en) | 2013-06-25 |
WO2007084749A3 (en) | 2008-04-10 |
EP1987519B1 (en) | 2015-08-19 |
US20070171730A1 (en) | 2007-07-26 |
EP1987519A4 (en) | 2009-07-29 |
US20110060969A1 (en) | 2011-03-10 |
US20130290813A1 (en) | 2013-10-31 |
WO2007084749A2 (en) | 2007-07-26 |
US9053051B2 (en) | 2015-06-09 |
US8856622B2 (en) | 2014-10-07 |
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