JP5227194B2 - 積層電極 - Google Patents
積層電極 Download PDFInfo
- Publication number
- JP5227194B2 JP5227194B2 JP2008556108A JP2008556108A JP5227194B2 JP 5227194 B2 JP5227194 B2 JP 5227194B2 JP 2008556108 A JP2008556108 A JP 2008556108A JP 2008556108 A JP2008556108 A JP 2008556108A JP 5227194 B2 JP5227194 B2 JP 5227194B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- platinum
- electrode
- thickness
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 145
- 239000010409 thin film Substances 0.000 claims description 107
- 229910052697 platinum Inorganic materials 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 239000002245 particle Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 30
- 229910052719 titanium Inorganic materials 0.000 claims description 30
- 239000010936 titanium Substances 0.000 claims description 30
- 239000006185 dispersion Substances 0.000 claims description 26
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 20
- 239000011651 chromium Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 description 32
- 238000004544 sputter deposition Methods 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 239000010410 layer Substances 0.000 description 22
- 238000005260 corrosion Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 21
- 230000003197 catalytic effect Effects 0.000 description 17
- 239000011521 glass Substances 0.000 description 15
- 239000008151 electrolyte solution Substances 0.000 description 12
- 229940021013 electrolyte solution Drugs 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000000446 fuel Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 238000005868 electrolysis reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003637 basic solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- -1 iodine ions Chemical class 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000012266 salt solution Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SZTSOGYCXBVMMT-UHFFFAOYSA-N 2,4-dimethyl-1-propylimidazole;hydroiodide Chemical compound [I-].CCC[NH+]1C=C(C)N=C1C SZTSOGYCXBVMMT-UHFFFAOYSA-N 0.000 description 1
- ADSOSINJPNKUJK-UHFFFAOYSA-N 2-butylpyridine Chemical compound CCCCC1=CC=CC=N1 ADSOSINJPNKUJK-UHFFFAOYSA-N 0.000 description 1
- QKPVEISEHYYHRH-UHFFFAOYSA-N 2-methoxyacetonitrile Chemical compound COCC#N QKPVEISEHYYHRH-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005341 cation exchange Methods 0.000 description 1
- MMAADVOQRITKKL-UHFFFAOYSA-N chromium platinum Chemical compound [Cr].[Pt] MMAADVOQRITKKL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8605—Porous electrodes
- H01M4/8621—Porous electrodes containing only metallic or ceramic material, e.g. made by sintering or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8647—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites
- H01M4/8657—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites layered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/92—Metals of platinum group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Hybrid Cells (AREA)
- Inert Electrodes (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Description
(1)基板上に形成されたクロムおよびチタンからなる群より選ばれた少なくとも1種の金属からなる金属薄膜、および該金属薄膜上に白金粒子を分散させた分散層を有し、金属薄膜の厚さは300nm〜1μmであり、分散層の厚さは3nm〜10nmであり、分散層における白金粒子の平均粒子径は10nm以下であることを特徴とする積層電極(以下、本願発明の一実施形態という)、
(2)基板上に形成されたクロム、アルミニウムおよび銅からなる群より選ばれた少なくとも1種の金属からなる金属薄膜、該金属薄膜上に形成されたチタン薄膜、および該チタン薄膜上に白金粒子が分散した分散層を有し、金属薄膜の厚さは300nm〜1μmであり、チタン薄膜の厚さは100nm〜300nmであり、分散層の厚さは3nm〜10nmであり、分散層における白金粒子の平均粒子径は10nm以下であることを特徴とする積層電極(以下、本願発明の他の実施形態という)
に関する。
2 金属薄膜
3 白金薄膜
4 白金分散層
5 金属薄膜
6 チタン薄膜
ガラス基板(コーニング社製、品番:コーニング#1737)上に、スパッタリング法によって厚さ700nmのクロム薄膜を形成させた。スパッタリング法によるクロム薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力200W、アルゴンガス圧力0.2Pa、製膜時間60分間の条件で行った。
実施例1と同様にしてガラス基板上に、スパッタリング法によって厚さ700nmのクロム薄膜を形成させた。
8nmである白金粒子の分散層(厚さ5nm)を形成させることにより、本願発明の一実施形態の積層電極を得た。なお、スパッタリング法によるクロム薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力200W、アルゴンガス圧力0.2Pa、製膜時間40秒間の条件で行った。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、スパッタリング法によって厚さ800nmの銅薄膜を形成させた。スパッタリング法による銅薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力300W、アルゴンガス圧力0.2Pa、製膜時間80分間の条件で行った。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、実施例3と同様にしてスパッタリング法によって厚さ800nmの銅薄膜を形成させた。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、スパッタリング法によって厚さ20nmの白金薄膜を形成させることにより、従来の積層電極を得た。スパッタリング法による白金薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力200W、アルゴンガス圧力0.2Pa、製膜時間2分40分間の条件で行った。
比較例1において、白金薄膜を形成させるときの製膜条件をRF電力200W、アルゴンガス圧力0.2Pa、製膜時間80分間に変更したこと以外は、比較例1と同様の操作を行うことにより、白金薄膜の厚さが600nmである従来の積層電極を得た。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、スパッタリング法によって厚さ700nmのクロム薄膜を形成させることにより、従来の積層電極を得た。スパッタリング法によるクロム薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力200W、アルゴンガス圧力0.2Pa、製膜時間60分間の条件で行った。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、スパッタリング法によって厚さ800nmの銅薄膜を形成させることにより、従来の積層電極を得た。スパッタリング法による銅薄膜の形成は、RFマグネトロンスパッタ装置〔アネルバ(株)製〕を用い、RF電力200W、アルゴンガス圧力0.2Pa、製膜時間80分間の条件で行った。
(1)積層電極の薄膜が形成された面の表面抵抗
積層電極の薄膜が形成された面の表面抵抗は、シート抵抗測定器〔三菱化学(株)製〕による四端子法によって測定した。
色素増感太陽電池の電解質溶液(0.1mol/Lのヨウ化リチウム、0.05mol/Lのヨウ素、0.6mol/Lのヨウ化ジメチルプロピルイミダゾリウムおよび0.5mol/Lのブチルピリジンを含むメトキシアセトニトリル溶液)中に、各実施例または各比較例で得られた積層電極を1週間浸漬した後、薄膜が形成された面を電子顕微鏡で観察し、腐食状況を調べ、以下の評価基準に基づいて評価した。
○:ほとんど変化がなく、腐食が浸漬面の10%未満である。
△:腐食が浸漬面の10%以上80%未満まで進行している。
×:腐食が浸漬面の80%以上進行している。
実施例1で用いたガラス基板と同じ種類のガラス基板上に、FTO透明導電膜(膜厚:600nm)と酸化チタン膜(膜厚:15μm)を順次積層し、その酸化チタン膜にルテニウム色素〔ソーラロニックス(Solaronix)社製、品番:N719〕を担持することによって作用電極を作製した。
Claims (2)
- 基板上に形成されたクロムおよびチタンからなる群より選ばれた少なくとも1種の金属からなる金属薄膜、および該金属薄膜上に白金粒子を島状に分離して形成された分散層を有する色素増感太陽電池の対向電極に用いられる積層電極であって、
前記金属薄膜の厚さは300nm〜1μmであり、前記分散層の厚さは3nm〜10nmであり、前記分散層における白金粒子の平均粒子径は10nm以下であることを特徴とする積層電極。 - 基板上に形成されたクロム、アルミニウムおよび銅からなる群より選ばれた少なくとも1種の金属からなる金属薄膜、該金属薄膜上に形成されたチタン薄膜、および該チタン薄膜上に白金粒子を島状に分離して形成された分散層を有する色素増感太陽電池の対向電極に用いられる積層電極であって、
前記金属薄膜の厚さは300nm〜1μmであり、前記チタン薄膜の厚さは100nm〜300nmであり、前記分散層の厚さは3nm〜10nmであり、前記分散層における白金粒子の平均粒子径は10nm以下であることを特徴とする積層電極。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008556108A JP5227194B2 (ja) | 2007-01-31 | 2008-01-29 | 積層電極 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007021663 | 2007-01-31 | ||
JP2007021663 | 2007-01-31 | ||
PCT/JP2008/051310 WO2008093675A1 (ja) | 2007-01-31 | 2008-01-29 | 積層電極 |
JP2008556108A JP5227194B2 (ja) | 2007-01-31 | 2008-01-29 | 積層電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008093675A1 JPWO2008093675A1 (ja) | 2010-05-20 |
JP5227194B2 true JP5227194B2 (ja) | 2013-07-03 |
Family
ID=39673985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008556108A Expired - Fee Related JP5227194B2 (ja) | 2007-01-31 | 2008-01-29 | 積層電極 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5227194B2 (ja) |
WO (1) | WO2008093675A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5679636B2 (ja) * | 2009-03-26 | 2015-03-04 | セイコーエプソン株式会社 | 液体噴射ヘッド及びアクチュエーター装置 |
JP4620794B1 (ja) * | 2010-03-11 | 2011-01-26 | 大日本印刷株式会社 | 色素増感型太陽電池 |
KR101811887B1 (ko) * | 2012-06-21 | 2017-12-22 | 히타치 긴조쿠 가부시키가이샤 | 색소 증감형 태양 전지용 금속 기판 |
US10121602B2 (en) | 2012-06-22 | 2018-11-06 | Hitachi Metals, Ltd. | Metal substrate for dye-sensitized solar cell |
KR101473087B1 (ko) * | 2013-01-18 | 2014-12-16 | 서울시립대학교 산학협력단 | 복합층 전극체를 이용한 염료감응형 태양전지 |
US9567681B2 (en) * | 2013-02-12 | 2017-02-14 | Treadstone Technologies, Inc. | Corrosion resistant and electrically conductive surface of metallic components for electrolyzers |
JP5716939B2 (ja) * | 2014-03-13 | 2015-05-13 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びにアクチュエーター装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003123855A (ja) * | 2001-10-17 | 2003-04-25 | Fujikura Ltd | 光電変換素子用光電極 |
JP2005346971A (ja) * | 2004-05-31 | 2005-12-15 | Fujikura Ltd | 湿式太陽電池の対極構造及び湿式太陽電池 |
JP2006164697A (ja) * | 2004-12-06 | 2006-06-22 | Sharp Corp | 色素増感太陽電池および色素増感太陽電池モジュール |
-
2008
- 2008-01-29 JP JP2008556108A patent/JP5227194B2/ja not_active Expired - Fee Related
- 2008-01-29 WO PCT/JP2008/051310 patent/WO2008093675A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003123855A (ja) * | 2001-10-17 | 2003-04-25 | Fujikura Ltd | 光電変換素子用光電極 |
JP2005346971A (ja) * | 2004-05-31 | 2005-12-15 | Fujikura Ltd | 湿式太陽電池の対極構造及び湿式太陽電池 |
JP2006164697A (ja) * | 2004-12-06 | 2006-06-22 | Sharp Corp | 色素増感太陽電池および色素増感太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008093675A1 (ja) | 2010-05-20 |
WO2008093675A1 (ja) | 2008-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5227194B2 (ja) | 積層電極 | |
Suzuki et al. | Application of carbon nanotubes to counter electrodes of dye-sensitized solar cells | |
Yen et al. | Metal-free, nitrogen-doped graphene used as a novel catalyst for dye-sensitized solar cell counter electrodes | |
KR102014990B1 (ko) | 광전극 구조체용 복합 보호층, 이를 포함하는 광전극 구조체 및 이를 포함하는 광전기화학 전지 | |
Koo et al. | Seasoning effect of dye-sensitized solar cells with different counter electrodes | |
Hsieh et al. | A highly efficient dye-sensitized solar cell with a platinum nanoflowers counter electrode | |
JP5150818B2 (ja) | 色素増感太陽電池およびその製造方法 | |
JP4446011B2 (ja) | 色素増感型太陽電池用光電極の製造方法および色素増感型太陽電池用光電極、並びに色素増感型太陽電池 | |
JP4620794B1 (ja) | 色素増感型太陽電池 | |
KR101297885B1 (ko) | 그래핀 및 금속 하이브리드 필름을 포함하는 염료감응형 태양전지용 상대전극 및 이를 포함하는 염료감응형 태양전지 | |
Mohamed et al. | Synthesis, characterization and performance as a Counter Electrode for dye-sensitized solar cells of CoCr-decorated carbon nanofibers | |
JP2007073507A (ja) | 炭素ナノチューブを用いた光電気化学素子 | |
Rajavedhanayagam et al. | Cu2NiSnS4/graphene nanohybrid as a newer counter electrode to boost-up the photoconversion efficiency of dye sensitized solar cell | |
JP2008053042A (ja) | 色素増感太陽電池 | |
JP2010055935A (ja) | 色素増感型太陽電池 | |
JP2017123471A (ja) | 電流導電性電極及びそれを製造する方法 | |
JP4945491B2 (ja) | 積層電極およびそれを用いた色素増感太陽電池 | |
JP4788838B2 (ja) | 色素増感型太陽電池 | |
Prasad et al. | Molybdenum induced defective WO3 multifunctional nanostructure as an electrochromic energy storage device: Novel assembled photovoltaic-electrochromic Mo–WO3 film | |
KR100998146B1 (ko) | 티타늄 튜브와 박판 구조물이 포함되는 염료 감응형태양전지 | |
Pak et al. | Surface treatment effect of carbon fiber fabric counter electrode in dye sensitized solar cell | |
Li et al. | Dye-sensitized solar cells with higher J sc by using polyvinylidene fluoride membrane counter electrodes | |
JP5593881B2 (ja) | 色素増感型太陽電池 | |
JP2019192570A (ja) | 燃料電池用セパレータ | |
KR101048880B1 (ko) | 크롬 버퍼층이 형성된 염료감응형 태양전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100519 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100629 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110121 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120309 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20120309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121211 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130315 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5227194 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160322 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |