JP5224570B2 - 絶縁膜形成方法および半導体装置の製造方法 - Google Patents
絶縁膜形成方法および半導体装置の製造方法 Download PDFInfo
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- JP5224570B2 JP5224570B2 JP2006218012A JP2006218012A JP5224570B2 JP 5224570 B2 JP5224570 B2 JP 5224570B2 JP 2006218012 A JP2006218012 A JP 2006218012A JP 2006218012 A JP2006218012 A JP 2006218012A JP 5224570 B2 JP5224570 B2 JP 5224570B2
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- 238000000034 method Methods 0.000 title claims description 56
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 82
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 36
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 34
- 229910017604 nitric acid Inorganic materials 0.000 claims description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000009835 boiling Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 115
- 239000000243 solution Substances 0.000 description 35
- 238000012545 processing Methods 0.000 description 23
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- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 12
- 239000003595 mist Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
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- 239000002184 metal Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
<第1の実施形態>
図1Aおよび図1Bは、本実施形態の絶縁膜形成装置の説明図である。尚、本実施形態では、基材として、3C−SiC(立方晶のシリコンカーバイド)を用いた(以下、便宜上、基板またはシリコンカーバイド基板とする)。また、このシリコンカーバイド基板は、基板上に厚さ6μmのエピタキシャル成長層を形成した、面方位(100)であって、表面抵抗率が0.02〜0.03Ω・cmのn形基板であった。
第1の実施形態による方法により形成された構造体500の両面に、電極用の金属膜(金属を含む膜)62,63を形成した。その後、絶縁膜51が形成されている側の金属膜62について、公知のフォトリソグラフィ工程によりこの金属膜を所望の電極形状(直径3mmの円形)にパターニングして、図2Bに示すようなMOSキャパシタ600を製造した。尚、この金属膜は、電極用Al合金(約1重量%のシリコン(Si)を含むアルミニウム(Al)合金)を、周知の抵抗加熱処理蒸着法により膜厚約200nmに堆積することにより形成されている(以下、この種の金属膜電極を単にAl電極と称する)。ここで、電極用の金属膜はこのAl電極に限るものではなく、他の金属であっても良い。また、この金属膜による電極に代えて、ポリシリコン電極を用いることもできる。
12 支持台
14 処理チャンバー
16,26,36 ヒーター
24 処理槽
34,44 容器
46 噴霧器
100,200,300,400 処理装置
51 絶縁膜
62,63 金属膜
500 構造体
600 MOSキャパシタ
Claims (8)
- 水素を含む雰囲気中でシリコンカーバイト、シリコン、ポリシリコンの群から選ばれる基材の少なくとも表面を200℃以上600℃以下で加熱した後、前記基材の表面を濃度20wt%以上の硝酸溶液中に浸漬する工程又は前記硝酸溶液を噴霧する工程、もしくは前記硝酸溶液から発生の蒸気に曝す工程を有する基材表面への絶縁膜形成方法。
- 前記水素の濃度が75vol%以上である請求項1に記載の基材表面への絶縁膜形成方法。
- 前記絶縁膜が主として二酸化シリコン(SiO2)である請求項1に記載の基材表面への絶縁膜形成方法。
- 前記硝酸溶液は、沸点近傍又は沸点に加熱された熱硝酸である請求項1に記載の基材表面への絶縁膜形成方法。
- 前記硝酸溶液は、室温から沸点近傍または沸点にまで加熱される熱硝酸である請求項1に記載の基材表面への絶縁膜形成方法。
- 前記硝酸溶液は、沸点近傍または沸点に加熱された所定濃度の硝酸と、略共沸状態または共沸状態の硝酸との、少なくとも2種類である請求項1に記載の基材表面への絶縁膜形成方法。
- 前記硝酸溶液は、任意濃度の硝酸が室温から略共沸状態または共沸状態の硝酸になるまで加熱された溶液である請求項1に記載の基材表面への絶縁膜形成方法。
- 請求項1に記載の方法によって絶縁膜を形成する工程を有する半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006218012A JP5224570B2 (ja) | 2006-08-08 | 2006-08-10 | 絶縁膜形成方法および半導体装置の製造方法 |
PCT/JP2007/064759 WO2008018304A1 (fr) | 2006-08-08 | 2007-07-27 | Procédé de formation d'un film isolant, appareil pour former le film isolant, procédé de fabrication d'un dispositif semi-conducteur, dispositif semi-conducteur et procédé de traitement de surface pour substrat en carbure de silicium |
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JP2006215822 | 2006-08-08 | ||
JP2006215822 | 2006-08-08 | ||
JP2006218012A JP5224570B2 (ja) | 2006-08-08 | 2006-08-10 | 絶縁膜形成方法および半導体装置の製造方法 |
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Publication Number | Publication Date |
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JP2008066317A JP2008066317A (ja) | 2008-03-21 |
JP5224570B2 true JP5224570B2 (ja) | 2013-07-03 |
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JP2006218012A Expired - Fee Related JP5224570B2 (ja) | 2006-08-08 | 2006-08-10 | 絶縁膜形成方法および半導体装置の製造方法 |
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JP (1) | JP5224570B2 (ja) |
WO (1) | WO2008018304A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011102009A1 (ja) * | 2010-02-16 | 2011-08-25 | 株式会社Kit | 太陽電池およびその製造方法、並びに太陽電池の製造装置 |
JP6162188B2 (ja) * | 2010-07-29 | 2017-07-12 | 小林 光 | 太陽電池の製造装置 |
JP5806667B2 (ja) * | 2010-07-29 | 2015-11-10 | 小林 光 | 太陽電池およびその製造方法、並びに太陽電池の製造装置 |
WO2012014668A1 (ja) * | 2010-07-29 | 2012-02-02 | 株式会社Kit | 太陽電池およびその製造方法、並びに太陽電池の製造装置 |
EP3516682A1 (en) * | 2016-09-26 | 2019-07-31 | ZF Friedrichshafen AG | Method of manufacturing an insulation layer on silicon carbide and semiconductor device |
CN113764121B (zh) * | 2021-09-18 | 2022-06-21 | 西安电子科技大学 | 一种锑掺杂二氧化锡导电薄膜及其制备方法和应用 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684887A (ja) * | 1992-09-07 | 1994-03-25 | Toshiba Corp | 半導体ウェーハの保護膜形成方法及び同装置 |
JPH06140615A (ja) * | 1992-10-27 | 1994-05-20 | Olympus Optical Co Ltd | 固体撮像装置の製造方法 |
JP3085272B2 (ja) * | 1997-12-19 | 2000-09-04 | 富士電機株式会社 | 炭化けい素半導体装置の熱酸化膜形成方法 |
JP3604018B2 (ja) * | 2002-05-24 | 2004-12-22 | 独立行政法人科学技術振興機構 | シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法 |
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2006
- 2006-08-10 JP JP2006218012A patent/JP5224570B2/ja not_active Expired - Fee Related
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- 2007-07-27 WO PCT/JP2007/064759 patent/WO2008018304A1/ja active Application Filing
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JP2008066317A (ja) | 2008-03-21 |
WO2008018304A1 (fr) | 2008-02-14 |
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