JP5211572B2 - 酸化膜形成方法 - Google Patents
酸化膜形成方法 Download PDFInfo
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- JP5211572B2 JP5211572B2 JP2007195576A JP2007195576A JP5211572B2 JP 5211572 B2 JP5211572 B2 JP 5211572B2 JP 2007195576 A JP2007195576 A JP 2007195576A JP 2007195576 A JP2007195576 A JP 2007195576A JP 5211572 B2 JP5211572 B2 JP 5211572B2
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- gas
- organic silicon
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- ozone
- film
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- 238000000034 method Methods 0.000 title claims description 44
- 230000015572 biosynthetic process Effects 0.000 title description 21
- 239000007789 gas Substances 0.000 claims description 245
- 239000000758 substrate Substances 0.000 claims description 85
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 73
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 53
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 33
- 238000009826 distribution Methods 0.000 claims description 32
- 239000012495 reaction gas Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000010408 film Substances 0.000 description 115
- 229910052710 silicon Inorganic materials 0.000 description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 98
- 239000010703 silicon Substances 0.000 description 98
- 238000012545 processing Methods 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 32
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000354 decomposition reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000009833 condensation Methods 0.000 description 7
- 230000005494 condensation Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 tetramethylsilane hexamethyldisilazane silicon oxide Chemical compound 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
有力なひとつの解決法として基板を回転させる方式が挙げられる。だが、基板回転方式は基板の大型化につれて装置への負荷が大きくなる。近年ではメートルサイズを超えるような大型基板に対する製膜の需要が高まっており、このようなサイズの基板に回転機構を加えるには大規模な設備が必要なる。
図1は発明の第一の実施形態に係る酸化膜形成装置1の概略構成図である。
図7は発明の第二の実施形態に係る処理炉70の概略構成図である。
図8は発明の第三の実施形態に係る処理炉80の概略構成図である。
本実施形態は有機シリコンガスの混合ガスを用いてステップカバレージ特性の良好な膜を作製する方法及び装置を提供する。
2…処理炉、10…照射窓、16…サセプタ、18…圧力計
3…光源
4…ガス供給系、5…オゾン含有ガス供給系、6…有機シリコンガス供給系、7…有機シリコンガス供給系、8…リークガス供給系、11〜14…ボンベ
9…基板
15…バイパスライン
17…排気ポンプ
19…除外筒
V1〜V7…バルブ
Claims (4)
- オゾン含有ガスとテトラメチルシランとヘキサメチルジシラザンとを含んだ反応ガスを基板に供給して前記基板にシリコン酸化膜を形成する酸化膜形成方法において、
オゾン含有ガスとテトラメチルシランとヘキサメチルジシラザンの混合比を調整することで前記形成されるシリコン酸化膜の膜厚分布を制御すること
を特徴とする酸化膜形成方法。 - テトラメチルシランとヘキサメチルジシラザンが気化状態となる温度領域のもとで前記反応ガスを前記基板に供給することを特徴とする請求項1に記載の酸化膜形成方法。
- 前記酸化膜が形成される基板の面は段差を有することを特徴とする請求項1または2に記載の酸化膜形成方法。
- 前記反応ガスにおいてテトラメチルシランとヘキサメチルジシラザンの混合比を調整することで基板に形成される酸化膜の段差特性を制御することを特徴とする請求項3に記載の酸化膜形成方法。
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JP2007195576A JP5211572B2 (ja) | 2007-07-27 | 2007-07-27 | 酸化膜形成方法 |
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JP2007195576A JP5211572B2 (ja) | 2007-07-27 | 2007-07-27 | 酸化膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009032911A JP2009032911A (ja) | 2009-02-12 |
JP5211572B2 true JP5211572B2 (ja) | 2013-06-12 |
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JP2007195576A Expired - Fee Related JP5211572B2 (ja) | 2007-07-27 | 2007-07-27 | 酸化膜形成方法 |
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JP (1) | JP5211572B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8012887B2 (en) * | 2008-12-18 | 2011-09-06 | Applied Materials, Inc. | Precursor addition to silicon oxide CVD for improved low temperature gapfill |
US9460912B2 (en) * | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758097A (ja) * | 1993-08-11 | 1995-03-03 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2001160587A (ja) * | 1999-12-03 | 2001-06-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2005101637A (ja) * | 2000-04-11 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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JP2009032911A (ja) | 2009-02-12 |
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