JP5176276B2 - 半導体装置およびその製造方法 - Google Patents
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2224/732—Location after the connecting process
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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Description
少なくとも前記パワー半導体素子の周面および当該パワー半導体素子と前記導体パターンとを接合している半田接合層の表面を覆うようにガラスコートが施されており、部品間の半田接合部周域をガラスコートで封止するものとする(請求項1)。
(1)前記の半導体装置において、金属製のヒートスプレッダまたは金属製のヒートスプレッダを介して配線用のリードフレームが前記パワー半導体素子の上面に積層され、その相互間が半田接合された上で、少なくとも前記パワー半導体素子の周面、前記ヒートスプレッダの周面および当該パワー半導体素子と前記ヒートスプレッダとを接合している半田接合層の表面を覆うようにガラスコートが施されている(請求項2)。
(2)前記の半導体装置において、前記絶縁基板が放熱用金属ベース上に搭載され半田接合された上で、その半田接合層を包含するように前記絶縁基板と放熱用金属ベースの接合部周面にガラスコートが施されている(請求項3)。
(3)前記ガラスコートの線膨張係数が半導体素子の線膨張係数と導体パターンの線膨張係数の中間である(請求項4)。
(4)前記ガラスコートのコーティング剤がポリシザランで、そのガラスコート膜厚さを5〜20μm以下とする(請求項5)。
このガラスコートの線膨張係数(9pmm/℃)は、半導体素子(Si)の線膨張係数(3pmm/℃)と絶縁基板の導体パターン,ヒートスプレッダ,リードフレーム(Cu)の線膨張係数(16pmm/℃)の中間であり、このガラスコートで前記接合部品の周面を覆うことにより、ガラスコートがシェルとしてヒートサイクルに伴う半導体素子およびこれに半田接合した接合相手部材の自由な熱変形を拘束し、これにより半田接合層に発生する歪みを低減させてモジュールの長期信頼性が向上する。
2 絶縁基板
3 パワー半導体素子
4 半田接合層
5 ボンディングワイヤ
9,10 ガラスコート
11 ヒートスプレッダ
12 リードフレーム
Claims (7)
- 絶縁基板の表面に形成された導体パターンにパワー半導体素子が半田マウントされた半導体装置において、
少なくとも前記パワー半導体素子の周面および当該パワー半導体素子と前記導体パターンとを接合している半田接合層の表面を覆うようにガラスコートが施されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、金属製のヒートスプレッダまたは金属製のヒートスプレッダを介して配線用のリードフレームが前記パワー半導体素子の上面に積層され、その相互間が半田接合された上で、少なくとも前記パワー半導体素子の周面、前記ヒートスプレッダの周面および当該パワー半導体素子と前記ヒートスプレッダとを接合している半田接合層の表面を覆うようにガラスコートが施されていることを特徴とする半導体装置。
- 請求項1または2に記載の半導体装置において、前記絶縁基板が放熱用金属ベース上に搭載され半田接合された上で、その半田接合層を包含するように前記絶縁基板と放熱用金属ベースの接合部周面にガラスコートが施されていることを特徴とする半導体装置。
- 請求項1ないし3のいずれかに記載の半導体装置において、ガラスコートの線膨張係数が半導体素子の線膨張係数と導体パターンの線膨張係数の中間であることを特徴とする半導体装置。
- 請求項1ないし4のいずれかに記載の半導体装置において、ガラスコートのコーティング剤がポリシザランで、そのガラスコート膜厚を5〜20μmとしたことを特徴とする半導体装置。
- 絶縁基板の表面に形成した導体パターンにパワー半導体素子を半田マウントした半導体装置の製造方法において、
前記半導体素子およびその半田接合層を包含して半導体素子/絶縁基板の接合部表面にポリシザランをスプレー法,ポッティング法,ディッピング法のいずれかの方法でコーティングした上で、室温放置によりガラス質に転化させ、膜厚5〜20μmのガラスコートを施すことを特徴とする半導体装置の製造方法。 - 請求項6に記載の製造方法において、ディッピング法によるポリシザランのコーティング工程でコーティング剤原液に超音波振動を加えてコーティングを行うことを特徴とする半導体装置の製造方法。
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JP5176276B2 true JP5176276B2 (ja) | 2013-04-03 |
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Families Citing this family (4)
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JP2009194275A (ja) * | 2008-02-18 | 2009-08-27 | Sumitomo Electric Ind Ltd | 実装用組立構造および樹脂封止型半導体装置 |
JP2011124398A (ja) * | 2009-12-11 | 2011-06-23 | Hitachi Ltd | 接合構造及びその製造方法 |
JP6056162B2 (ja) * | 2012-03-12 | 2017-01-11 | 三菱マテリアル株式会社 | パワーモジュールの製造方法 |
WO2024095813A1 (ja) * | 2022-10-31 | 2024-05-10 | 日本発條株式会社 | 部品実装基板、部品実装基板の製造方法、電子モジュール、及び電子モジュールの製造方法 |
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JPH01181596A (ja) * | 1988-01-11 | 1989-07-19 | Nippon Denso Co Ltd | 混成集積回路装置及びその製造方法 |
JPH0585053U (ja) * | 1992-04-22 | 1993-11-16 | サンケン電気株式会社 | 抵抗素子を備えた電子部品 |
JP3603571B2 (ja) * | 1997-11-06 | 2004-12-22 | セイコーエプソン株式会社 | 圧電素子およびその製造方法 |
JPH11297869A (ja) * | 1998-04-08 | 1999-10-29 | Mitsubishi Electric Corp | パワー半導体装置 |
JP2000033327A (ja) * | 1998-07-16 | 2000-02-02 | Ne Chemcat Corp | 表面に微細な凹凸を有する基材へのセラミック被膜の形成方法 |
JP2002050939A (ja) * | 2000-08-03 | 2002-02-15 | Seiko Instruments Inc | 圧電振動子 |
JP2002084015A (ja) * | 2000-09-06 | 2002-03-22 | Murata Mfg Co Ltd | 磁電変換素子およびそれを用いた磁気センサ |
JP2002134893A (ja) * | 2000-10-26 | 2002-05-10 | Sanyo Electric Co Ltd | 混成集積回路装置の製造方法 |
JP3829641B2 (ja) * | 2001-04-17 | 2006-10-04 | 株式会社日立製作所 | パワー半導体モジュール |
JP3935381B2 (ja) * | 2002-03-14 | 2007-06-20 | 松下電器産業株式会社 | 両面電極半導体素子を有する電子回路装置及び該電子回路装置の製造方法 |
JP3761857B2 (ja) * | 2002-10-11 | 2006-03-29 | 三菱電機株式会社 | 半導体装置 |
JP2004241734A (ja) * | 2003-02-10 | 2004-08-26 | Toyota Industries Corp | 半導体モジュール |
JP2005005356A (ja) * | 2003-06-10 | 2005-01-06 | Hitachi Ltd | パワー半導体モジュール及びその製造方法 |
JP2005298944A (ja) * | 2004-04-15 | 2005-10-27 | Yamashiro:Kk | 車輛のガラスコーティング方法 |
JP2005311019A (ja) * | 2004-04-21 | 2005-11-04 | Hitachi Ltd | 半導体パワーモジュール |
JP2005322019A (ja) * | 2004-05-10 | 2005-11-17 | Sanyo Electric Co Ltd | 多電源集積回路の検証方法 |
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