JP5174435B2 - ウェットエッチングアンダカットを最小にし且つ超低ｋ（ｋ＜２．５）誘電体をポアシーリングする方法 - Google Patents

ウェットエッチングアンダカットを最小にし且つ超低ｋ（ｋ＜２．５）誘電体をポアシーリングする方法 Download PDF

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Publication number: JP5174435B2
Authority: JP; Japan
Prior art keywords: layer; oxygen; precursor; film; silicon
Prior art date: 2006-11-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2007298307A

Other languages

English (en)

Japanese (ja)

Other versions

JP2008147644A (ja

JP2008147644A5 (zh

Inventor

シュウフイウェン

シェクメイ−イー

シャリ−クン

アル−ヴァヤティアミール

ウィッティーデレク

ムサードハイチェム

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-11-21

Filing date

2007-11-16

Publication date

2013-04-03

2007-03-30 Priority claimed from US11/694,856 external-priority patent/US20070287301A1/en

2007-11-16 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2008-06-26 Publication of JP2008147644A publication Critical patent/JP2008147644A/ja

2010-12-02 Publication of JP2008147644A5 publication Critical patent/JP2008147644A5/ja

2013-04-03 Application granted granted Critical

2013-04-03 Publication of JP5174435B2 publication Critical patent/JP5174435B2/ja

Status Active legal-status Critical Current

2027-11-16 Anticipated expiration legal-status Critical

Links

238000000034 method Methods 0.000 title claims description 48
239000011148 porous material Substances 0.000 title description 9
238000007789 sealing Methods 0.000 title description 9
239000003989 dielectric material Substances 0.000 title 1
239000010410 layer Substances 0.000 claims description 158
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 56
229910052760 oxygen Inorganic materials 0.000 claims description 47
239000002243 precursor Substances 0.000 claims description 42
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 41
239000001301 oxygen Substances 0.000 claims description 40
229910052799 carbon Inorganic materials 0.000 claims description 39
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
238000000151 deposition Methods 0.000 claims description 34
229910052710 silicon Inorganic materials 0.000 claims description 30
239000000758 substrate Substances 0.000 claims description 30
229910052757 nitrogen Inorganic materials 0.000 claims description 28
239000007789 gas Substances 0.000 claims description 24
239000010703 silicon Substances 0.000 claims description 24
125000000217 alkyl group Chemical group 0.000 claims description 20
238000004140 cleaning Methods 0.000 claims description 17
230000004888 barrier function Effects 0.000 claims description 16
229910052734 helium Inorganic materials 0.000 claims description 9
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
125000004122 cyclic group Chemical group 0.000 claims description 8
239000001307 helium Substances 0.000 claims description 8
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
150000001875 compounds Chemical class 0.000 claims description 7
229920006395 saturated elastomer Polymers 0.000 claims description 7
239000000463 material Substances 0.000 claims description 6
125000004430 oxygen atom Chemical group O* 0.000 claims description 6
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
230000035515 penetration Effects 0.000 claims description 5
229910052786 argon Inorganic materials 0.000 claims description 4
238000005240 physical vapour deposition Methods 0.000 claims description 4
239000006117 anti-reflective coating Substances 0.000 claims description 3
-1 cyclic organosilicon compounds Chemical class 0.000 claims description 3
229910052739 hydrogen Inorganic materials 0.000 claims description 2
239000012528 membrane Substances 0.000 claims description 2
239000002344 surface layer Substances 0.000 claims description 2
150000003377 silicon compounds Chemical class 0.000 claims 3
238000000231 atomic layer deposition Methods 0.000 claims 2
KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
239000010408 film Substances 0.000 description 98
HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 34
238000004380 ashing Methods 0.000 description 31
230000008021 deposition Effects 0.000 description 17
229920002120 photoresistant polymer Polymers 0.000 description 16
230000008569 process Effects 0.000 description 16
238000009736 wetting Methods 0.000 description 10
239000000203 mixture Substances 0.000 description 9
150000003961 organosilicon compounds Chemical class 0.000 description 9
125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
238000009832 plasma treatment Methods 0.000 description 7
239000012159 carrier gas Substances 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
238000004458 analytical method Methods 0.000 description 4
230000005661 hydrophobic surface Effects 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000002052 molecular layer Substances 0.000 description 3
QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
238000001179 sorption measurement Methods 0.000 description 3
WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
239000004020 conductor Substances 0.000 description 2
239000010949 copper Substances 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 2
UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
230000002209 hydrophobic effect Effects 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
239000011229 interlayer Substances 0.000 description 2
125000004433 nitrogen atom Chemical group N* 0.000 description 2
239000003361 porogen Substances 0.000 description 2
125000006850 spacer group Chemical group 0.000 description 2
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
JDYIHBJBOWFKFW-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetrazatetrasilocane Chemical compound CN1[Si](C)N(C)[Si](C)N(C)[Si](C)N(C)[Si]1C JDYIHBJBOWFKFW-UHFFFAOYSA-N 0.000 description 1
TXELXUPMAZCYJR-UHFFFAOYSA-N 1,2,3,4,5,6-hexamethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound CN1[SiH2]N[SiH](C)N(C)[SiH](C)N(C)[SiH]1C TXELXUPMAZCYJR-UHFFFAOYSA-N 0.000 description 1
PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 1
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
229910018557 Si O Inorganic materials 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
239000012212 insulator Substances 0.000 description 1
OFLMWACNYIOTNX-UHFFFAOYSA-N methyl(methylsilyloxy)silane Chemical compound C[SiH2]O[SiH2]C OFLMWACNYIOTNX-UHFFFAOYSA-N 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
125000000962 organic group Chemical group 0.000 description 1
150000001282 organosilanes Chemical class 0.000 description 1
125000005375 organosiloxane group Chemical group 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Plasma & Fusion (AREA)
General Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Formation Of Insulating Films (AREA)
Physical Vapour Deposition (AREA)

JP2007298307A 2006-11-21 2007-11-16 ウェットエッチングアンダカットを最小にし且つ超低ｋ（ｋ＜２．５）誘電体をポアシーリングする方法 Active JP5174435B2 (ja)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US86677006P	2006-11-21	2006-11-21
US60/866,770		2006-11-21
US11/694,856 US20070287301A1 (en)	2006-03-31	2007-03-30	Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US11/694,856		2007-03-30

Publications (3)

Publication Number	Publication Date
JP2008147644A JP2008147644A (ja)	2008-06-26
JP2008147644A5 JP2008147644A5 (zh)	2010-12-02
JP5174435B2 true JP5174435B2 (ja)	2013-04-03

Family

ID=39517296

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2007298307A Active JP5174435B2 (ja)	2006-11-21	2007-11-16	ウェットエッチングアンダカットを最小にし且つ超低ｋ（ｋ＜２．５）誘電体をポアシーリングする方法

Country Status (4)

Country	Link
JP (1)	JP5174435B2 (zh)
KR (1)	KR100939593B1 (zh)
CN (1)	CN100550318C (zh)
TW (1)	TWI392024B (zh)

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US8236684B2 (en) *	2008-06-27	2012-08-07	Applied Materials, Inc.	Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
CN101740332B (zh) *	2008-11-13	2012-04-25	中芯国际集成电路制造(北京)有限公司	一种半导体元件的蚀刻方法
US20120122320A1 (en) *	2010-11-17	2012-05-17	Applied Materials, Inc.	Method Of Processing Low K Dielectric Films
US9034770B2 (en) *	2012-09-17	2015-05-19	Applied Materials, Inc.	Differential silicon oxide etch
CN103839871B (zh) *	2012-11-21	2017-09-08	中芯国际集成电路制造(上海)有限公司	一种半导体器件的制造方法
CN105448705B (zh) *	2014-06-18	2018-05-04	无锡华润上华科技有限公司	一种消除晶圆氧化膜上微粒的方法及其氧化膜
CN105244257B (zh) *	2014-07-08	2020-06-23	中芯国际集成电路制造(上海)有限公司	改善多孔低k薄膜的突起缺陷的方法
CN105702619A (zh) *	2014-11-27	2016-06-22	中芯国际集成电路制造(上海)有限公司	半导体结构的形成方法
US20160225652A1 (en)	2015-02-03	2016-08-04	Applied Materials, Inc.	Low temperature chuck for plasma processing systems
CN111863610A (zh) *	2020-05-12	2020-10-30	中国电子科技集团公司第十一研究所	一种制备电极孔的方法及计算机可读存储介质
CN113667976A (zh) *	2021-08-27	2021-11-19	中国科学院兰州化学物理研究所	一种具有封孔顶层的耐蚀dlc薄膜及其制备方法

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JP2001077196A (ja) *	1999-09-08	2001-03-23	Sony Corp	半導体装置の製造方法
TW535253B (en) *	2000-09-08	2003-06-01	Applied Materials Inc	Plasma treatment of silicon carbide films
US6890850B2 (en) *	2001-12-14	2005-05-10	Applied Materials, Inc.	Method of depositing dielectric materials in damascene applications
US6936551B2 (en) *	2002-05-08	2005-08-30	Applied Materials Inc.	Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6927178B2 (en) *	2002-07-11	2005-08-09	Applied Materials, Inc.	Nitrogen-free dielectric anti-reflective coating and hardmask
US7005390B2 (en) *	2002-10-09	2006-02-28	Intel Corporation	Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
KR100909175B1 (ko) *	2002-12-27	2009-07-22	매그나칩 반도체 유한회사	듀얼 다마신 패턴 형성 방법
KR100573484B1 (ko) *	2003-06-30	2006-04-24	에스티마이크로일렉트로닉스 엔.브이.	반도체 소자 및 그 제조 방법
KR20050014231A (ko) *	2003-07-30	2005-02-07	매그나칩 반도체 유한회사	반도체소자의 형성방법
JP2005050954A (ja) *	2003-07-31	2005-02-24	Toshiba Corp	半導体装置およびその製造方法
US20050037153A1 (en) *	2003-08-14	2005-02-17	Applied Materials, Inc.	Stress reduction of sioc low k films
JP4015976B2 (ja) *	2003-08-28	2007-11-28	株式会社東芝	電子装置の製造方法
JP2005203568A (ja) *	2004-01-15	2005-07-28	Semiconductor Leading Edge Technologies Inc	半導体装置の製造方法及び半導体装置
JP2006332408A (ja) *	2005-05-27	2006-12-07	Sony Corp	半導体装置の製造方法

2007
- 2007-10-26 KR KR1020070108170A patent/KR100939593B1/ko not_active IP Right Cessation
- 2007-10-29 CN CNB2007101651423A patent/CN100550318C/zh not_active Expired - Fee Related
- 2007-10-29 TW TW096140628A patent/TWI392024B/zh active
- 2007-11-16 JP JP2007298307A patent/JP5174435B2/ja active Active

Also Published As

Publication number	Publication date
KR20080046087A (ko)	2008-05-26
CN101202227A (zh)	2008-06-18
CN100550318C (zh)	2009-10-14
JP2008147644A (ja)	2008-06-26
TW200826196A (en)	2008-06-16
TWI392024B (zh)	2013-04-01
KR100939593B1 (ko)	2010-02-01

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