JP5122952B2 - クリーニング構成を有する光学システム - Google Patents
クリーニング構成を有する光学システム Download PDFInfo
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- JP5122952B2 JP5122952B2 JP2007522099A JP2007522099A JP5122952B2 JP 5122952 B2 JP5122952 B2 JP 5122952B2 JP 2007522099 A JP2007522099 A JP 2007522099A JP 2007522099 A JP2007522099 A JP 2007522099A JP 5122952 B2 JP5122952 B2 JP 5122952B2
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- getter
- optical system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
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- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning In General (AREA)
Description
Claims (19)
- 光学システムであって、特に、光学要素により規定されるビーム経路を有し、反応ガスを供給するための反応ガス入口と前記ビーム経路から離れて備えられている少なくとも1つのゲッタ表面とを有するクリーニング構成を有するEUV放射のためのものである光学システムであり、前記ゲッタ表面は、化学反応及び/又は凝縮により汚染物質を吸収するようにデザインされ、前記汚染物質は、反応ガスとの反応を介して前記光学要素の光学表面から除去される、ことを特徴とする光学システム。
- ゲッタガス入口がゲッタガスのために備えられている、ことを特徴とする請求項1に記載の光学システム。
- 前記ゲッタ表面はゲッタコーティングを有する、ことを特徴とする請求項1に記載の光学システム。
- 前記ゲッタ表面は、前記ゲッタ表面の表面領域を大きくするための表面構造を備えている、ことを特徴とする請求項1に記載の光学システム。
- 前記反応ガス入口は光学要素のクリーニングされる表面の方を向いている、ことを特徴とする請求項1に記載の光学システム。
- 前記ゲッタガス入口は前記ゲッタ表面の方を向いている、ことを特徴とする請求項2に記載の光学システム。
- 前記ゲッタガス入口及び/又は前記反応ガス入口は複数の開口又は開放された孔構造を有する、ことを特徴とする請求項2に記載の光学システム。
- 前記ゲッタガス入口は複数の開口を有し、前記複数の開口は前記ゲッタ表面に組み込まれている又は前記ゲッタ表面に備えられている、ことを特徴とする請求項2に記載の光学システム。
- 前記ゲッタ表面は冷却システムを備えている、ことを特徴とする請求項1に記載の光学システム。
- 光学的に活性な表面を加熱するために、前記光学要素は前記光学要素に関連付けられた加熱構成を有する、ことを特徴とする請求項1に記載の光学システム。
- 前記ゲッタ表面は、前記EUV放射が適用される前記光学要素の表面と反対側に又は隣接して備えられている、ことを特徴とする請求項1に記載の光学システム。
- 当該光学システムは、互いに同軸上に備えられているミラー表面を有し、該ミラー表面の裏側はゲッタ表面を構成する、ことを特徴とする請求項1に記載の光学システム。
- 前記反応ガス入口の前記複数の開口は、クリーニングされる表面又は前記ゲッタ表面に組み込まれている、又は前記クリーニングされる表面に隣接して備えられている、ことを特徴とする請求項1又は2に記載の光学システム。
- 光学システム、特に、EUV放射のためにデザインされた光学システムで用いるためのクリーニング構成であって、当該クリーニング構成は反応ガス入り口と少なくとも1つのゲッタ表面とを有する、クリーニング構成であって、
前記反応ガス入口は、クリーンにされる、前記光学システムの光学表面の方に狙いを定めることが可能であり、
前記反応ガス入口は、反応ガスとの反応を介して前記光学表面から汚染物質を除去することが可能である前記反応ガスを供給することが可能であり、
前記少なくとも1つのゲッタ表面は、前記光学システムのビーム経路から離れて備えられることが可能であり、
前記少なくとも1つのゲッタ表面は、化学反応及び/又は凝縮により前記汚染物質を吸収するようにデザインされている、
ことを特徴とするクリーニング構成。 - 表面をクリーニングする方法であって、クリーニングされるべき前記表面は、前記表面から汚染物質を分離するための反応ガスが適用され、分離される前記汚染物質は凝縮により及び/又は化学反応によりゲッタ表面によって吸収されることを特徴とする方法。
- ゲッタガス、特に、炭素含有及び/又は窒素含有及び/又は酸素含有ガスが前記ゲッタ表面に対して流れる、ことを特徴とする請求項15に記載の方法。
- ハロゲン含有ガス又は水素含有ガスが反応ガスとして用いられる、ことを特徴とする請求項15に記載の方法。
- 前記反応ガスの入来はパルス化されて行われる、ことを特徴とする請求項15に記載の方法。
- コレクタシステムとして請求項1乃至12の少なくとも一項に記載の光学システムを有することを特徴とするEUV放射を生成する放射源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103506 | 2004-07-22 | ||
EP04103506.4 | 2004-07-22 | ||
PCT/IB2005/052379 WO2006011105A2 (en) | 2004-07-22 | 2005-07-18 | Optical system having a cleaning arrangement |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008507840A JP2008507840A (ja) | 2008-03-13 |
JP2008507840A5 JP2008507840A5 (ja) | 2012-11-01 |
JP5122952B2 true JP5122952B2 (ja) | 2013-01-16 |
Family
ID=34993296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007522099A Active JP5122952B2 (ja) | 2004-07-22 | 2005-07-18 | クリーニング構成を有する光学システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US7732789B2 (ja) |
EP (1) | EP1774406B1 (ja) |
JP (1) | JP5122952B2 (ja) |
CN (1) | CN100573334C (ja) |
AT (1) | ATE555422T1 (ja) |
TW (1) | TWI410751B (ja) |
WO (1) | WO2006011105A2 (ja) |
Families Citing this family (21)
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US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
EP1896904B1 (en) | 2005-06-21 | 2012-09-19 | Philips Intellectual Property & Standards GmbH | Method of cleaning optical surfaces of an irradiation unit in a two-step process |
JP5033126B2 (ja) | 2005-06-21 | 2012-09-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 照射ユニット内の光学表面の洗浄化処理および後処理の方法 |
US7462850B2 (en) * | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
US7473908B2 (en) | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
US8049188B2 (en) | 2006-09-04 | 2011-11-01 | Koninklijke Philips Electronics N.V. | Method of cleaning a surface region covered with contaminant or undesirable material |
US7671348B2 (en) * | 2007-06-26 | 2010-03-02 | Advanced Micro Devices, Inc. | Hydrocarbon getter for lithographic exposure tools |
JP4973425B2 (ja) * | 2007-10-03 | 2012-07-11 | ウシオ電機株式会社 | 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置 |
ITMI20080282A1 (it) | 2008-02-22 | 2009-08-23 | Getters Spa | Apparato per litografia con radiazione nell'uv estremo con un elemento assorbitore di idrocarburi comprendente un materiale getter |
NL2003152A1 (nl) | 2008-08-14 | 2010-02-16 | Asml Netherlands Bv | Radiation source, lithographic apparatus and device manufacturing method. |
JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
US8790603B2 (en) | 2012-06-27 | 2014-07-29 | Kla-Tencor Corporation | Apparatus for purifying a controlled-pressure environment |
CN103230901B (zh) * | 2013-04-28 | 2015-02-04 | 哈尔滨工业大学 | 一种保持激光传输光学***中洁净度的冲扫装置和方法 |
CN103230900B (zh) * | 2013-04-28 | 2015-03-04 | 哈尔滨工业大学 | 一种用于保持大口径光学元件表面洁净的冲扫装置 |
US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
US9560730B2 (en) * | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
US9776218B2 (en) * | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
KR102655267B1 (ko) * | 2017-06-26 | 2024-04-08 | 에이에스엠엘 네델란즈 비.브이. | 냉각 장치 및 냉각 장치용 플라즈마-세정 스테이션 |
DE102021213613A1 (de) | 2021-12-01 | 2022-09-15 | Carl Zeiss Smt Gmbh | Verfahren zum Aufbringen eines Getter-Materials auf eine Oberfläche eines Bauteils für ein Lithographiesystem |
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JP2000088999A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | X線装置 |
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-
2005
- 2005-07-18 US US11/572,238 patent/US7732789B2/en active Active
- 2005-07-18 JP JP2007522099A patent/JP5122952B2/ja active Active
- 2005-07-18 EP EP05758710A patent/EP1774406B1/en active Active
- 2005-07-18 WO PCT/IB2005/052379 patent/WO2006011105A2/en active Application Filing
- 2005-07-18 AT AT05758710T patent/ATE555422T1/de active
- 2005-07-18 CN CNB2005800248241A patent/CN100573334C/zh active Active
- 2005-07-19 TW TW094124351A patent/TWI410751B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI410751B (zh) | 2013-10-01 |
ATE555422T1 (de) | 2012-05-15 |
WO2006011105A2 (en) | 2006-02-02 |
EP1774406B1 (en) | 2012-04-25 |
JP2008507840A (ja) | 2008-03-13 |
CN1989458A (zh) | 2007-06-27 |
US7732789B2 (en) | 2010-06-08 |
EP1774406A2 (en) | 2007-04-18 |
CN100573334C (zh) | 2009-12-23 |
WO2006011105A3 (en) | 2006-10-12 |
US20090014666A1 (en) | 2009-01-15 |
TW200615702A (en) | 2006-05-16 |
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