JP5489457B2 - Euv光源のための代替燃料 - Google Patents
Euv光源のための代替燃料 Download PDFInfo
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- JP5489457B2 JP5489457B2 JP2008519480A JP2008519480A JP5489457B2 JP 5489457 B2 JP5489457 B2 JP 5489457B2 JP 2008519480 A JP2008519480 A JP 2008519480A JP 2008519480 A JP2008519480 A JP 2008519480A JP 5489457 B2 JP5489457 B2 JP 5489457B2
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- tin
- euv light
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- 239000000446 fuel Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims description 69
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 56
- 230000003287 optical effect Effects 0.000 claims description 30
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 description 49
- 210000002381 plasma Anatomy 0.000 description 32
- 239000007789 gas Substances 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- -1 salt Chemical class 0.000 description 5
- 229910000846 In alloy Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 150000003606 tin compounds Chemical class 0.000 description 3
- 229910001432 tin ion Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 101100456571 Mus musculus Med12 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000435574 Popa Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本出願は、2006年4月17日出願の米国特許出願出願番号第11/406、216号に対する優先権を請求するものであり、かつ「EUV光源の内部構成要素に及ぼすプラズマ生成デブリの影響を低減するためのシステム及び方法」という名称の米国特許出願出願番号第11/174、442号の一部継続出願であり、これは、代理人整理番号第2004−0044−01号である、2004年7月27日出願の「EUV光源」という名称の米国特許出願出願番号第10/900、839号の一部継続出願であり、かつ代理人整理番号第2003−0125−01号である、2004年3月17日出願の「高繰返し数LPP、EUV光源」という名称の米国特許出願出願番号第10/803、526号の一部継続出願であり、かつ代理人整理番号第2003−0083−01号である、2004年3月10日出願の「EUV光のための集光装置」という名称の米国特許出願出願番号第10/798、740号の一部継続出願であり、各特許の開示内容は、この記載によって明細書において引用により組み込まれる。
上記を念頭に置いて、本出願人は、レーザ生成プラズマEUV光源及び対応する使用方法を開示する。
従って、ガリウム−錫合金の使用によって、錫とレーザ、例えば、10.6μmでのCO2レーザ源との間の良好な結合を得ることができ、従って、良好な変換効率、液滴発生器の作動温度低減、デブリ低減機構、例えば、錫とガリウムのエッチングが得られると共に、一部の場合には、質量限定原料物質として使用し、デブリと材料消費量を低減することができる。
従って、ガリウム−錫−インジウム合金の使用によって、錫とレーザ、例えば、10.6μmでのCO22レーザ源との間の良好な結合を得ることができ、従って、良好な変換効率、液滴発生器の作動温度低減、デブリ低減機構、例えば、錫とガリウムの両方のエッチングが得られると共に、一部の場合には、質量限定原料物質として使用し、デブリと材料消費量を低減することができる。
24 ターゲット送出システム
28 照射サイト
40 中間焦点
Claims (5)
- 表面を有する少なくとも1つの光学要素と、
レーザビームを発生するレーザ源と、
前記レーザビームによって照射されてプラズマを形成し、かつEUV光を放出する原料物質であって、少なくとも臭化錫を含むと共に、プラズマの形成により前記光学要素の表面上に堆積する錫デブリを生成する原料物質と、ここで、前記原料物質はさらに前記表面から堆積錫をエッチングするのに有効である元素を含み、前記臭化錫及び前記堆積錫をエッチングするのに有効である元素を含む前記原料物質は単一の供給手段によって供給され、
前記原料物質を、前記臭化錫の融点よりも高い温度まで加熱する加熱器と、
前記光学要素の表面上の錫堆積物を150℃よりも高い温度まで加熱し、前記堆積した錫と堆積錫をエッチングするのに有効である元素との間の化学反応の速度を増大させる加熱器と、
を含むことを特徴とするEUV光源。 - 前記臭化錫は、SnBr4及びSnBr2からなる化合物のグループから選択されたものであることを特徴とする請求項1に記載のEUV光源。
- 原料物質の液滴を作成するための液滴発生システムを更に含むことを特徴とする請求項1に記載のEUV光源。
- 前記レーザ源は、CO2レーザ源を含むことを特徴とする請求項1に記載のEUV光源。
- 前記堆積した錫と堆積錫をエッチングするのに有効である元素は、HBr、HI、I 2 、Br 2 、Cl 2 、HCl、H 2 、及びこれらの組合せから成る群から選択されることを特徴とする請求項1に記載のEUV光源。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/174,442 | 2005-06-29 | ||
US11/174,442 US7196342B2 (en) | 2004-03-10 | 2005-06-29 | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US11/406,216 US7465946B2 (en) | 2004-03-10 | 2006-04-17 | Alternative fuels for EUV light source |
US11/406,216 | 2006-04-17 | ||
PCT/US2006/024959 WO2007005414A2 (en) | 2005-06-29 | 2006-06-27 | Alternative fuels for euv light source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009500795A JP2009500795A (ja) | 2009-01-08 |
JP2009500795A5 JP2009500795A5 (ja) | 2009-08-13 |
JP5489457B2 true JP5489457B2 (ja) | 2014-05-14 |
Family
ID=37449908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519480A Expired - Fee Related JP5489457B2 (ja) | 2005-06-29 | 2006-06-27 | Euv光源のための代替燃料 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7141806B1 (ja) |
JP (1) | JP5489457B2 (ja) |
TW (1) | TWI335777B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5277496B2 (ja) * | 2007-04-27 | 2013-08-28 | ギガフォトン株式会社 | 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置 |
JP5098019B2 (ja) * | 2007-04-27 | 2012-12-12 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
NL2009358A (en) | 2011-09-23 | 2013-03-26 | Asml Netherlands Bv | Radiation source. |
SG11201908803XA (en) * | 2017-04-11 | 2019-10-30 | Asml Netherlands Bv | Lithographic apparatus and cooling method |
JP7366341B2 (ja) * | 2019-06-28 | 2023-10-23 | 株式会社Flosfia | エッチング処理方法 |
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-
2005
- 2005-09-27 US US11/237,649 patent/US7141806B1/en not_active Expired - Fee Related
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2006
- 2006-06-15 TW TW095121393A patent/TWI335777B/zh not_active IP Right Cessation
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TWI335777B (en) | 2011-01-01 |
JP2009500795A (ja) | 2009-01-08 |
TW200708206A (en) | 2007-02-16 |
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