JP5121693B2 - High frequency circuit equipment - Google Patents

High frequency circuit equipment Download PDF

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JP5121693B2
JP5121693B2 JP2008327510A JP2008327510A JP5121693B2 JP 5121693 B2 JP5121693 B2 JP 5121693B2 JP 2008327510 A JP2008327510 A JP 2008327510A JP 2008327510 A JP2008327510 A JP 2008327510A JP 5121693 B2 JP5121693 B2 JP 5121693B2
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frequency circuit
lead wire
width
frequency
circuit board
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JP2010153452A (en
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和博 菅藤
善久 吉川
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Description

本発明は、高周波信号が伝送する、高周波回路装置に係わり、特に高周波パッケージ部品と高周波回路基板の接続構造の改良に関する。   The present invention relates to a high-frequency circuit device that transmits a high-frequency signal, and more particularly to an improvement in a connection structure between a high-frequency package component and a high-frequency circuit board.

従来、高周波回路装置では、高周波回路基板をケースにネジ留めし、発熱量の大きい高周波パッケージ部品は高周波回路基板に穴を開け、ケースに、直接ネジ留めしている。この構造では高周波パッケージにおいて発生した熱を効率的にケースに放熱できる。そして、高周波回路基板上の回路パターンに高周波パッケージ部品のリードを半田付けすることにより接続し電気信号を伝えるようにしている。   Conventionally, in a high-frequency circuit device, a high-frequency circuit board is screwed to a case, and a high-frequency package component that generates a large amount of heat is drilled in the high-frequency circuit board and screwed directly to the case. With this structure, heat generated in the high frequency package can be efficiently radiated to the case. The circuit pattern on the high-frequency circuit board is connected by soldering the leads of the high-frequency package component to transmit an electrical signal.

ところが、基板とケースでは線膨張係数が異なるので、温度変化が生ずると、基板とケースが膨張・収縮し、基板とケースの膨張・収縮の度合いが異なることによって高周波回路基板上の半田付け部やパッケージとリード線との接続部に応力が生ずる。この応力が大きくなって接続部が耐えられなくなると、半田クラックやパッケージの破断が発生し、電気的な接続が取れなくなり、動作不良を引き起こすおそれがある。   However, since the linear expansion coefficient is different between the board and the case, when the temperature change occurs, the board and the case expand and contract, and the degree of expansion and contraction between the board and the case varies, so Stress occurs at the connection between the package and the lead wire. If this stress becomes so large that the connecting portion cannot withstand, solder cracks and package breakage may occur, resulting in failure of electrical connection and possible malfunction.

ところで、通常、ケースには軽量で加工がし易くしかも放熱及び電気伝導性に優れたアルミニウムを用いる。また、高周波回路基板としては樹脂素材の、例えばガラスエポキシ基板を使用する。アルミニウムとガラスエポキシ基板の線膨張係数は各々２４×１０−６、１４×１０−６である。膨張の差は、線膨張係数の差に長さと温度差を掛けることにより得られる。いま例えば長さ３００ｍｍのこれらの材料に１００℃の温度変化が生ずるとすると、その膨張の差はつぎのように計算される。 By the way, the case is usually made of aluminum that is lightweight, easy to process, and excellent in heat dissipation and electrical conductivity. Further, as the high frequency circuit board, a resin material, for example, a glass epoxy board is used. The linear expansion coefficients of the aluminum and glass epoxy substrates are 24 × 10 −6 and 14 × 10 −6 , respectively. The difference in expansion is obtained by multiplying the difference in linear expansion coefficient by the length and temperature difference. Assuming that a temperature change of 100 ° C. occurs in these materials having a length of 300 mm, for example, the difference in expansion is calculated as follows.

（２４×１０−６−１４×１０−６）×３００×１００＝０．３ｍｍ
高周波回路基板とケースが一端の端面で固定されているとすると、他端のリードとパターンの接続部分で０．３ｍｍの変位が発生し、無視できない大きさである。しかも温度変化が繰り返され、数百サイクルにもなると、接続部分に半田クラックや破断が生じて電気的接続が失われ、動作不良を起こす。 (24 × 10 −6 −14 × 10 −6 ) × 300 × 100 = 0.3 mm
Assuming that the high-frequency circuit board and the case are fixed at the end face at one end, a displacement of 0.3 mm occurs at the connecting portion between the lead and the pattern at the other end, which is a size that cannot be ignored. In addition, when the temperature change is repeated and the number of cycles reaches several hundreds, solder cracks and breaks occur in the connection portion, and the electrical connection is lost, resulting in malfunction.

ところで、高周波回路を内蔵するパッケージにおいて、誘電体基板とパッケージなどとの熱膨張に相違により、温度変化によって接続部分に生ずる機械的なストレスを緩和するために、接続する金属リードに半円状の撓みを形成することが知られている（例えば特許文献１参照）。   By the way, in a package incorporating a high-frequency circuit, a semicircular metal lead is connected to a metal lead to be connected in order to relieve mechanical stress generated in a connection portion due to a temperature change due to a difference in thermal expansion between the dielectric substrate and the package. It is known to form a deflection (see, for example, Patent Document 1).

しかし、このようにしてもリード線が変形しにくい場合には熱膨張の相違による機械的ストレスは十分緩和できず、半田クラックや破断を生ずるおそれがあった。
特開平８−５１１７４号公報、図７ However, even in this case, when the lead wire is difficult to deform, the mechanical stress due to the difference in thermal expansion cannot be relieved sufficiently, and there is a risk of causing a solder crack or breakage.
JP-A-8-51174, FIG.

本発明は、上述のような従来の高周波回路装置の問題点に鑑みてなされたもので、熱膨張率の差があっても機械的なストレスによる半田クラックや破断が生ぜず電気的な信頼性の高い高周波回路装置を提供することを目的とする。   The present invention has been made in view of the problems of the conventional high-frequency circuit device as described above, and does not cause solder cracks or breakage due to mechanical stress even if there is a difference in thermal expansion coefficient. An object of the present invention is to provide a high-frequency circuit device with high accuracy.

本発明の請求項１によれば、金属製のケースと、このケース上に設置され、電子回路を内蔵する高周波パッケージ部品と、この高周波パッケージ部品と離して前記ケース上に設置される高周波回路基板と、この高周波回路基板の接続端子に一端が、前記高周波パッケージ部品の接続端子に他端がそれぞれ接続され、中央部の幅が両端における接続部分の幅よりも狭く、かつ、中央部が上方に湾曲して形成されたリード線と、を有することを特徴とする高周波回路装置を提供する。 According to the first aspect of the present invention, a metal case, a high-frequency package component installed on the case and containing an electronic circuit, and a high-frequency circuit board installed on the case apart from the high-frequency package component One end is connected to the connection terminal of the high-frequency circuit board, the other end is connected to the connection terminal of the high-frequency package component, the width of the central part is narrower than the width of the connection part at both ends , and the central part is upward There is provided a high-frequency circuit device comprising: a lead wire formed by bending .

本発明によれば、熱膨張率の差があっても機械的なストレスによる半田クラックや破断が生ぜず電気的な信頼性の高い高周波回路装置が得られる効果がある。   According to the present invention, even if there is a difference in thermal expansion coefficient, there is an effect that a high-frequency circuit device with high electrical reliability can be obtained without causing solder cracks or breakage due to mechanical stress.

以下、本発明の実施の形態について図面を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明一実施形態の高周波回路装置の平面図であり、図２はこの高周波回路装置の図１Ａ−Ｂの断面図である。   FIG. 1 is a plan view of a high-frequency circuit device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the high-frequency circuit device shown in FIGS. 1A and 1B.

図２に示すように、この高周波回路装置は、段差のある例えばアルミニウム製の金属ケース１１の上に高周波回路基板１２と高周波パッケージ部品１３を有し、高周波パッケージ部品１３の電極１４と高周波回路基板１２の電極１５がリード線１６により接続される構造となっている。高周波パッケージ部品１３の電極１４は、ロウ付けにより予めリード線１６に接続されており、高周波回路基板１２の電極１５には回路接続の時に半田１７により接続される。図示しているように、リード線１６は一定の厚さを有し、少し上方に湾曲しており、両端から押圧力が加わると更に上方に湾曲して、押圧力による機械的ストレスを緩和する。   As shown in FIG. 2, this high-frequency circuit device has a high-frequency circuit board 12 and a high-frequency package part 13 on a metal case 11 made of, for example, aluminum having a step, and an electrode 14 and a high-frequency circuit board of the high-frequency package part 13. Twelve electrodes 15 are connected by lead wires 16. The electrode 14 of the high-frequency package component 13 is connected to the lead wire 16 in advance by brazing, and is connected to the electrode 15 of the high-frequency circuit board 12 by solder 17 when the circuit is connected. As shown in the figure, the lead wire 16 has a certain thickness and is slightly bent upward. When a pressing force is applied from both ends, the lead wire 16 is further bent upward to relieve mechanical stress due to the pressing force. .

なお、電極１５上のリード線１６の幅を明示するために、図１においては半田１７を示していない。リード線１６は、例えば鉄（Ｆｅ）とニッケル（Ｎｉ）とコバルト（Ｃｏ）等から成る合金（Ｋｏｖａｒ）である。Ｋｏｖａｒの成分は例えば重量％で、Ｎｉが２９％、Ｃｏが１７％、Ｓｉが０．２％、Ｍｎが０．３％、Ｆｅが５３．５％である。   In order to clarify the width of the lead wire 16 on the electrode 15, the solder 17 is not shown in FIG. The lead wire 16 is, for example, an alloy (Kovar) made of iron (Fe), nickel (Ni), cobalt (Co), or the like. The components of Kovar are, for example,% by weight, 29% Ni, 17% Co, 0.2% Si, 0.3% Mn and 53.5% Fe.

高周波回路基板１２は、誘電体基板２１と、この誘電体基板２１の裏面に一様に設けられた下部電極２２と、誘電体基板２１の上面に選択的に設けられたマイクロストリップ線路２３とを有し、このマイクロストリップ線路２３の上に上記電極１５が設けられている。誘電体基板２１としては、例えばガラスエポキシ樹脂基板を用いる。   The high-frequency circuit board 12 includes a dielectric substrate 21, a lower electrode 22 provided uniformly on the back surface of the dielectric substrate 21, and a microstrip line 23 selectively provided on the upper surface of the dielectric substrate 21. The electrode 15 is provided on the microstrip line 23. For example, a glass epoxy resin substrate is used as the dielectric substrate 21.

高周波パッケージ部品１３は、電子回路を内蔵し、メタルベース２４と、この上に設けられた誘電体層２５と、この上に選択的に設けられたマイクロストリップ線路２６と、このマイクロストリップ線路２６及び誘電体層２５の上に設けられた誘電体層２７と、この高周波パッケージ部品１３の蓋２８とを有する。上記電極１４は、マイクロストリップ線路２６の上に設けられている。   The high-frequency package component 13 contains an electronic circuit, a metal base 24, a dielectric layer 25 provided thereon, a microstrip line 26 selectively provided thereon, a microstrip line 26, and A dielectric layer 27 provided on the dielectric layer 25 and a lid 28 of the high-frequency package component 13 are provided. The electrode 14 is provided on the microstrip line 26.

図１に示すように、上記リード線１６は、中央部１６ｃにおいて細くした形状を有する。すなわち、リード線１６の中央部１６ｃの幅Ｗ１に対して、高周波回路基板１２のマイクロストリップ線路２３上の電極１５との接続部分１６ｄにおける幅Ｗ２及び高周波パッケージ部品１３のマイクロストリップ線路２６上の電極１４との接続部分１６ｅにおける幅W3は広くなっている。例えば、リード線１６の中央部１６ｃの幅W1が０．５ｍｍに対して、上記幅Ｗ２及びＷ３を１ｍｍとする。すると、電極と接続部分の幅が１ｍｍに対して中央部分で０．５ｍｍでありその比は５０％である。このリード線幅比は、一般に４０％〜６０％程度であることが望ましい。   As shown in FIG. 1, the lead wire 16 has a shape narrowed at the central portion 16c. That is, with respect to the width W1 of the central portion 16c of the lead wire 16, the width W2 at the connection portion 16d with the electrode 15 on the microstrip line 23 of the high frequency circuit board 12 and the electrode on the microstrip line 26 of the high frequency package component 13 The width W3 of the connecting portion 16e with the base 14 is wide. For example, the width W1 of the central portion 16c of the lead wire 16 is 0.5 mm, and the widths W2 and W3 are 1 mm. Then, the width of the electrode and the connection portion is 0.5 mm at the center portion with respect to 1 mm, and the ratio is 50%. In general, the lead wire width ratio is desirably about 40% to 60%.

したがって、温度上昇により、高周波回路基板１２や高周波パッケージ部品１３や金属ケース１１が膨張し矢印１８，１９の方向に延びたとしても、幅広いリード線で半田付けされた部分は強固に固定されているので、リード線１６は上方に湾曲して押圧力による機械的ストレスを吸収することができる。 Therefore, even if the high-frequency circuit board 12, the high-frequency package component 13, and the metal case 11 expand and extend in the directions of arrows 18 and 19 due to the temperature rise, the portions soldered with the wide lead wires are firmly fixed. Therefore, the lead wire 16 is bent upward and can absorb the mechanical stress due to the pressing force .

以下に本発明におけるリード線の変形例について説明する。   Hereinafter, modifications of the lead wire in the present invention will be described.

通常高周波パッケージ部品１３の接続端子１６ｅは予め強固に接続されるので、本発明では、幅Ｗ３は小さくともよく、少なくともリード線１６の幅Ｗ１が、高周波回路基板１２の接続部分１６ｄの幅Ｗ２より狭ければよい。   Since the connection terminal 16e of the high frequency package component 13 is normally firmly connected in advance, the width W3 may be small in the present invention, and at least the width W1 of the lead wire 16 is larger than the width W2 of the connection portion 16d of the high frequency circuit board 12. It should be narrow.

図３にリード線の変形例の平面図を示す。同図において３６ｃ，３６ｄ，３６ｅは、図１に示す符号、１６ｃ，１６ｄ，１６ｅに対応する。図示するように、リード線３６の高周波回路基板１２の電極１５に半田付けにより接続される部分３６ｄを特に幅広にすることも可能である。このようにすれば、半田による接続をより強固にすることができ、機械的ストレスに対する耐性を更に向上させることができる利点がある。   FIG. 3 shows a plan view of a modification of the lead wire. In the figure, 36c, 36d and 36e correspond to the reference numerals 16c, 16d and 16e shown in FIG. As shown in the drawing, the portion 36d of the lead wire 36 connected to the electrode 15 of the high-frequency circuit board 12 by soldering can be made particularly wide. In this way, there is an advantage that the connection by solder can be further strengthened and the resistance to mechanical stress can be further improved.

図１に示されるように、上記実施形態ではリード線１６の形状は、中央部１６ｃにおいて一定の幅Ｗ１となっており、途中から大きくなり、電極１５，１４に接続される部分１６ｄ，１６ｅにおいて幅がＷ２，Ｗ３となっていた。しかし本発明に用いるリード線は幅をなだらかに変化させることも可能である。   As shown in FIG. 1, in the above embodiment, the shape of the lead wire 16 has a constant width W1 at the central portion 16c, becomes larger from the middle, and in the portions 16d and 16e connected to the electrodes 15 and 14. The width was W2 and W3. However, the width of the lead wire used in the present invention can be changed gently.

このような変形例の平面図を図４に示す。同図において４６ｃ，４６ｄ，４６ｅは、図１に示す符号、１６ｃ，１６ｄ，１６ｅに対応する。リード線４６は中央部４６ｃから電極１５，１４に接続される部分４６ｄ，４６ｅにかけてなだらかに大きくなっている。このように、リード線の形状を湾曲させる、すなわち中央部から漸次幅広となる形状とすると、このリード線に高周波信号が伝達される場合には、反射が生じにくく良好な特性が得られる利点がある。なお、上記実施形態やこの変形例において、リード線に高周波信号が流れる場合、中央部において幅を狭くする場合のその割合については、機械的なストレス緩和の点だけでなく、高周波信号の信号伝達特性も考慮することが好ましい。   A plan view of such a modification is shown in FIG. In the figure, 46c, 46d and 46e correspond to the reference numerals 16c, 16d and 16e shown in FIG. The lead wire 46 gradually increases from the central portion 46 c to the portions 46 d and 46 e connected to the electrodes 15 and 14. Thus, if the shape of the lead wire is curved, that is, the shape gradually becomes wider from the center portion, when a high frequency signal is transmitted to this lead wire, there is an advantage that good characteristics are obtained with little reflection. is there. In the above-described embodiment and this modification, when a high-frequency signal flows through the lead wire, the ratio when the width is narrowed in the center is not limited to mechanical stress relief, but also the signal transmission of the high-frequency signal. It is preferable to consider the characteristics.

また、上記実施形態ではリード線は幅を変え、一定の厚さの形状のものを用いていた。しかし、本発明ではリード線の幅を変える代わりに厚さを変えるようにしてもよい。   Further, in the above embodiment, the lead wire has a constant thickness and a constant thickness. However, in the present invention, the thickness may be changed instead of changing the width of the lead wire.

図５にこのような変形例のリード線の断面図を示す。同図において５６ｃ，５６ｄ，５６ｅは、図１に示す符号、１６ｃ，１６ｄ，１６ｅに対応する。この変形例では、中央部５６ｃにおいて厚さが最も薄く両端に行くにしたがって漸次、厚さが増す形状５６ｄ，５６ｅのリード線５６を用いている。 FIG. 5 shows a cross-sectional view of such a modified lead wire. In the figure, 56c, 56d, and 56e correspond to the reference numerals 16c, 16d, and 16e shown in FIG. In this modification, the lead wires 56 having the shapes 56d and 56e that gradually increase in thickness toward the both ends are the thinnest at the central portion 56c.

さらに、図６にリード線の変形例の中央部断面から見た形状を示す。同図において６６ｃ，６６ｅは、図１に示す符号、１６ｃ，１６ｅに対応する。本発明に用いるリード線６６は、例えば中央部６６ｃにおいてほぼ円形断面形状とし、両端に行くほど太くなり矩形形状６６ｅとなるようにしてもよい。   Furthermore, the shape seen from the cross section of the center part of the modification of a lead wire is shown in FIG. In the figure, 66c and 66e correspond to the reference numerals 16c and 16e shown in FIG. The lead wire 66 used in the present invention may have, for example, a substantially circular cross-sectional shape at the central portion 66c, and become thicker toward the both ends so as to have a rectangular shape 66e.

なお、たとえば、中央部において幅を狭くしかも肉薄とし、電極に接続される部分に近づくほど、幅を広くしかも厚さを厚くするなど、図１から図６に示すリード線の形状を組み合わせるようにしてもよい。   In addition, for example, the width of the lead wire shown in FIGS. 1 to 6 may be combined such that the width is narrow and thin at the center, and the width is increased and the thickness is increased as the portion is connected to the electrode. May be.

本発明は、上記実施形態及び変形例に限られず種々変形して実施可能であり、その技術思想の範囲に含まれる限り、本発明に含まれる。また、上記実施形態ではマイクロストリップ線路の電極について説明したが、線路は制御信号を伝達する線路の電極であってもよい。   The present invention is not limited to the above-described embodiments and modifications, and can be implemented with various modifications. The present invention is included in the present invention as long as it is included in the scope of its technical idea. Moreover, although the microstrip line electrode has been described in the above embodiment, the line may be a line electrode that transmits a control signal.

本発明一実施形態の高周波回路装置の一部の平面図。The top view of a part of high frequency circuit device of one embodiment of the present invention. 図１の高周波回路装置の断面図。Sectional drawing of the high frequency circuit apparatus of FIG. 本発明一実施形態の高周波回路装置におけるリード線の一変形例の平面図。The top view of the modification of the lead wire in the high frequency circuit device of one embodiment of the present invention. 本発明一実施形態の高周波回路装置におけるリード線の他の変形例の平面図。The top view of the other modification of the lead wire in the high frequency circuit apparatus of one Embodiment of this invention. 本発明一実施形態の高周波回路装置におけるリード線の他の変形例の断面図。Sectional drawing of the other modification of the lead wire in the high frequency circuit apparatus of one Embodiment of this invention. 本発明一実施形態の高周波回路装置におけるリード線の更に他の変形例の断面図。Sectional drawing of the further another modification of the lead wire in the high frequency circuit apparatus of one Embodiment of this invention.

符号の説明Explanation of symbols

１１・・・金属ケース、
１２・・・高周波回路基板、
１３・・・高周波パッケージ部品、
１４、１５・・・電極、
１６，３６，４６，５６，６６・・・リード線、
１６ｃ、３６ｃ、４６ｃ、５６ｃ、６６ｃ・・・中央部、
１７・・・半田、
２１・・・誘電体基板、
２２・・・下部電極、
２３、２６・・・マイクロストリップ線路、
２４・・・メタルベース、
２５、２７・・・誘電体層、
２８・・・蓋。 11 ... Metal case,
12 ... high frequency circuit board,
13 ... high frequency package parts,
14, 15 ... electrodes,
16, 36, 46, 56, 66 ... lead wires,
16c, 36c, 46c, 56c, 66c ... central part,
17 ... solder,
21 ... Dielectric substrate,
22 ... lower electrode,
23, 26 ... microstrip line,
24 ... Metal base,
25, 27 ... dielectric layers,
28 ... lid.

Claims (5)

金属製のケースと、
このケース上に設置され、電子回路を内蔵する高周波パッケージ部品と、
この高周波パッケージ部品と離して前記ケース上に設置される高周波回路基板と、
この高周波回路基板の接続端子に一端が、前記高周波パッケージ部品の接続端子に他端がそれぞれ接続され、中央部の幅が両端の接続部分の幅よりも狭く、かつ、前記中央部が上方に湾曲して形成されたリード線と、
を有することを特徴とする高周波回路装置。 A metal case,
A high-frequency package component installed on this case and containing an electronic circuit,
A high-frequency circuit board installed on the case apart from the high-frequency package component;
One end is connected to the connection terminal of the high-frequency circuit board, the other end is connected to the connection terminal of the high-frequency package component, the width of the central portion is narrower than the width of the connection portion at both ends , and the central portion is curved upward a lead line formed by,
A high frequency circuit device comprising: 前記リード線は、前記中央部の幅が前記高周波回路基板の接続端子における接続部分の幅の４０％以上６０％以下の比率で形成されていることを特徴とする請求項１記載の高周波回路装置。   2. The high-frequency circuit device according to claim 1, wherein the lead wire is formed such that the width of the central portion is not less than 40% and not more than 60% of the width of the connection portion in the connection terminal of the high-frequency circuit board. . 前記リード線は、前記中央部の厚さが前記両端の接続部分の厚さよりも薄く形成されていることを特徴とする請求項１又は請求項２記載の高周波回路装置。   3. The high-frequency circuit device according to claim 1, wherein the lead wire is formed such that the thickness of the central portion is thinner than the thickness of the connection portions at both ends. 前記リード線は前記高周波回路基板に半田により接続され、この半田による接続部分は他の部分より幅広になっていることを特徴とする請求項１乃至請求項３のいずれか一項記載の高周波回路装置。   The high-frequency circuit according to claim 1, wherein the lead wire is connected to the high-frequency circuit board by solder, and a connecting portion by the solder is wider than other portions. apparatus. 前記リード線は、少なくとも鉄（Ｆｅ）とニッケル（Ｎｉ）及びコバルト（Ｃｏ）の合金により構成されてなることを特徴とする請求項１乃至請求項４のいずれか一項記載の高周波回路装置。   5. The high-frequency circuit device according to claim 1, wherein the lead wire is made of an alloy of at least iron (Fe), nickel (Ni), and cobalt (Co).
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