JP5106604B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 130
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 87
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- High Energy & Nuclear Physics (AREA)
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- Electrodes Of Semiconductors (AREA)
Description
12 SiC基板(半導体基板)
14 n−型SiC層(第1の半導体層)
16 p−型SiC層(第2の半導体層)
18 p+型SiC層(第3の半導体層)
20 第1の電極
22 第2の電極
24 第3の電極
26 第1の高抵抗領域
28 絶縁膜
30 第2の高抵抗領域
Claims (9)
- 第1導電型の半導体基板と、
前記半導体基板の上面に形成され、前記半導体基板よりも低不純物濃度の第1導電型の第1の半導体層と、
前記第1の半導体層上にエピタキシャル成長により形成される第2導電型の第2の半導体層と、
前記第2の半導体層上にエピタキシャル成長により形成され、前記第2の半導体層よりも高不純物濃度の第2導電型の第3の半導体層と、
前記第3の半導体層に形成され、少なくとも側面と底面との角部が前記第2の半導体層内にある凹部と、
前記第3の半導体層に接する第1の電極と、
前記凹部の底面において、前記第2の半導体層と接し、前記第1の電極と接続される第2の電極と、
前記半導体基板の下面に接する第3の電極と、
を有することを特徴とする半導体装置。 - 前記第1の電極が前記第3の半導体層とオーミック接合を形成し、
前記第2の電極が前記第2の半導体層とショットキー接合を形成し、
前記第3の電極が前記半導体基板とオーミック接合を形成することを特徴とする請求項1記載の半導体装置。 - 前記角部の前記第2の半導体層内に前記第1の半導体層よりも高抵抗の高抵抗領域が設けられていることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記凹部の側面が順テーパ形状を有することを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記半導体基板、第1、第2および第3の半導体層が炭化珪素であることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 第1導電型の半導体基板上に前記半導体基板よりも低不純物濃度の第1導電型の第1の半導体層をエピタキシャル成長により形成する工程と、
前記第1の半導体層上に第2導電型の第2の半導体層をエピタキシャル成長により形成する工程と、
前記第2の半導体層上に前記第2の半導体層よりも高不純物濃度の第2導電型の第3の半導体層をエピタキシャル成長により形成する工程と、
前記第3の半導体層に少なくとも側面と底面との角部が前記第2の半導体層内にある凹部を形成する工程と、
前記第3の半導体層に接する第1の電極を形成する工程と、
前記凹部の底面において、前記第2の半導体層と接し、前記第1の電極と接続される第2の電極を形成する工程と、
前記半導体基板の下面に接する第3の電極を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記角部に選択的に不純物をイオン注入する工程と、
1200℃以下の熱処理により前記不純物を活性化する工程と、をさらに有することを特徴とする請求項6記載の半導体装置の製造方法。 - 前記凹部の側面が順テーパ形状を有するようエッチングして前記凹部を形成することを特徴とする請求項6または請求項7記載の半導体装置の製造方法。
- 前記半導体基板、第1、第2および第3の半導体層がn型の炭化珪素であり、前記イオン注入する工程において、不純物としてB(ボロン)またはAr(アルゴン)を室温イオン注入することを特徴とする請求項6ないし請求項8いずれか一項記載の半導体装置の製造方法。
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JP2010199982A JP5106604B2 (ja) | 2010-09-07 | 2010-09-07 | 半導体装置およびその製造方法 |
US13/034,297 US8823148B2 (en) | 2010-09-07 | 2011-02-24 | Diode with epitaxially grown semiconductor layers |
US14/339,165 US9236434B2 (en) | 2010-09-07 | 2014-07-23 | Semiconductor device and manufacturing method thereof |
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JP2010199982A JP5106604B2 (ja) | 2010-09-07 | 2010-09-07 | 半導体装置およびその製造方法 |
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JP5106604B2 true JP5106604B2 (ja) | 2012-12-26 |
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Families Citing this family (8)
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JP2012256698A (ja) * | 2011-06-08 | 2012-12-27 | Hitachi Cable Ltd | 半導体ダイオード |
EP2911205B1 (en) * | 2012-10-19 | 2020-12-09 | Nissan Motor Co., Ltd | Semiconductor device and method for manufacturing same |
JP6197422B2 (ja) * | 2013-07-11 | 2017-09-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および支持基板付きウェハ |
JP6139340B2 (ja) * | 2013-09-03 | 2017-05-31 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN105405897B (zh) * | 2015-10-29 | 2019-02-05 | 中山大学 | 一种纵向导通型GaN基沟槽结势垒肖特基二极管及其制作方法 |
US10756189B2 (en) * | 2017-02-10 | 2020-08-25 | Mitsubishi Electric Corporation | Semiconductor device |
JP6884235B2 (ja) * | 2018-02-09 | 2021-06-09 | 三菱電機株式会社 | 電力用半導体装置 |
CN112071918A (zh) * | 2020-08-12 | 2020-12-11 | 西安理工大学 | 一种SiC沟槽MPS二极管及其制造方法 |
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JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
US20050045982A1 (en) * | 2002-03-22 | 2005-03-03 | Krishna Shenai | Semiconductor device with novel junction termination |
US8368165B2 (en) * | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
JP5213350B2 (ja) * | 2007-04-26 | 2013-06-19 | 関西電力株式会社 | 炭化珪素ツェナーダイオード |
JP2009224603A (ja) * | 2008-03-17 | 2009-10-01 | Toyota Central R&D Labs Inc | ダイオードの製造方法 |
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JP2012059823A (ja) | 2012-03-22 |
US20140335682A1 (en) | 2014-11-13 |
US20120056196A1 (en) | 2012-03-08 |
US8823148B2 (en) | 2014-09-02 |
US9236434B2 (en) | 2016-01-12 |
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