JP5098647B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP5098647B2 JP5098647B2 JP2007551842A JP2007551842A JP5098647B2 JP 5098647 B2 JP5098647 B2 JP 5098647B2 JP 2007551842 A JP2007551842 A JP 2007551842A JP 2007551842 A JP2007551842 A JP 2007551842A JP 5098647 B2 JP5098647 B2 JP 5098647B2
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Description
半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成された絶縁積層と、
前記絶縁積層中に形成され、配線パターンとビア導電体とを含む多層配線構造と、
前記半導体基板上方に形成され、前記多層配線構造に接続されたパッド電極構造であって、複数層のパッド用配線パターンと、前記パッド用配線パターン間を接続するパッド用ビア導電体を含み、少なくとも最上層のパッド用配線パターンはパッドパターンと前記パッドパターンから距離をおいて、ループ状に取り囲むシールパターンを含み、最上層以外のパッド用配線パターンの少なくとも1つは連続した、前記シールパターンに対応する大きさの拡大パッドパターンを有し、前記パッド用ビア導電体は、前記パッドパターンに対応して配置された複数の柱状ビア導電体と前記シールパターンに対応して配置されたループ状壁部とを含み、前記パッド用配線パターンのパッドパターンまたは前記拡大パッドパターンと前記柱状ビア導電体とが積層ボンディングパッドを構成し、前記拡大パッドパターンと前記シールパターンおよび前記ループ状壁部とが前記積層ボンディングパッドを取り囲み、水分、水素を遮蔽する機能を有するカップ状耐湿構造を形成するパッド電極構造と、
最上層の前記パッドパターンの周辺部上から最上層の前記シールパターンの上面を連続して覆う、水分、水素を遮蔽する機能を有する第1絶縁バリア層と、
前記カップ状耐湿構造の底面と前記最上層のパッド用配線パターンとの間に配置され、少なくとも前記カップ状耐湿構造の中間位置を横断する、水分、水素を遮蔽する機能を有する第2絶縁バリア層と、
を有し、前記パッドパターンが亀裂を有さない場合、前記パッドパターン、前記第1絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第1の密閉容器を構成し、前記第2絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第2の密閉容器を構成する半導体装置
が提供される。
図2Mに示すように、アルミナ膜22上に、例えばTEOSをソースとした酸化シリコン膜を厚さ2600nm程度CVDにより成膜し、表面を平坦化し、上述同様のプラズマアニールで表面を窒化する。さらにTEOSをソースとした酸化シリコン膜を厚さ100nm程度CVDにより形成する。この酸化シリコン膜24表面を窒化するためにさらにプラズマアニールを行なう。このようにして第1層間絶縁膜を形成した後レジストパターンを形成し、第1メタル配線M1Wと第2メタル配線を接続するためのコンタクトホールCHをエッチングする。
第1、第2実施例においては、第1メタル配線パターンの下方にまで一旦水分、水素が浸入すると、強誘電体キャパシタ表面を覆うアルミナ膜17以外には強誘電体膜を水分、水素から遮蔽する構造は特にない。
図4A−4Eは、第3の実施例による半導体装置の製造方法を概略的に示す断面図である。先ず、第1の実施例の図2A−2Fを参照して説明した工程と同様の工程を行なう。
図4Aは、図4Fと同じ構造を示す。すなわち、強誘電体キャパシタを形成した後、その表面をアルミナ膜17、酸化シリコン膜18で覆い、レジストパターンRPをエッチングマスクとしてバルクコンタクトホールをエッチングする。
なお、コンタクトホールのエッチングは、第1ステップで酸化シリコン膜9,8までをエッチングし、酸化窒化シリコン膜7表面でエッチングをストップさせる。次に、第2ステップでエッチング条件を変更して酸化窒化シリコン膜7をエッチングする。
以上の実施例においては、ベースメタル層上に筒状メタル部材を形成し、カップ型のシール構造を形成し、その内部に積層ボンディングパッド構造を形成した。ボンディングパッド構造における水分、水素に対するバリア性能をさらに高めることも可能である。
図6Aに示すように、第3の実施例の図4Eに示す構造同様、第1メタル配線パターンM1W下にもビア導電体層のシールウォールSW,耐湿リングAHR1が形成されると共に、ビア導電体と交差する位置にもアルミナ膜14が挿入され、酸化シリコン膜15で覆われる。第4の実施例の図5Dに示す構造同様、第1メタル配線パターンM1Wより上の層間絶縁層中にアルミナ膜25、35が挿入される。
さらに、ボンディングパッドよりも内側の領域において、チップ耐湿リングAHR1と同様の構成により内側チップ耐湿リングAHR2が形成されている。なお、ボンディングパッドの引き出し配線がある部分においては、内側チップ耐湿リングAHR2は切り欠かれている。
(付記1)
半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成された絶縁積層と、
前記絶縁積層中に形成され、配線パターンとビア導電体とを含む多層配線構造と、
前記半導体基板上方に形成され、前記多層配線構造に接続されたパッド電極構造であって、複数層のパッド用配線パターンと、前記パッド用配線パターン間を接続するパッド用ビア導電体を含み、少なくとも最上層のパッド用配線パターンはパッドパターンと前記パッドパターンから距離をおいて、ループ状に取り囲むシールパターンを含み、最上層以外のパッド用配線パターンの少なくとも1つは連続した、前記シールパターンに対応する大きさの拡大パッドパターンを有し、前記パッド用ビア導電体は、前記パッドパターンに対応して配置された複数の柱状ビア導電体と前記シールパターンに対応して配置されたループ状壁部とを含み、前記パッド用配線パターンのパッドパターンまたは前記拡大パッドパターンと前記柱状ビア導電体とが積層ボンディングパッドを構成し、前記拡大パッドパターンと前記シールパターンおよび前記ループ状壁部とが前記積層ボンディングパッドを取り囲み、水分、水素を遮蔽する機能を有するカップ状耐湿構造を形成するパッド電極構造と、
を有する半導体装置。
(付記2)
最下層の前記パッド用配線パターンは、前記拡大パッドパターンを有し、前記耐湿リングと前記最下層のパッド用配線パターンは底の閉じたループ状壁部を構成する付記1記載の半導体装置。
(付記3)
最上層、最下層以外の前記パッド用配線パターンの少なくとも1つが、前記拡大パッドパターンを有する付記2記載の半導体装置。
(付記4)
最下層以外の前記パッド用配線層パターンが、前記パッドパターンと前記シールパターンを有する付記2記載の半導体装置。
(付記5)
最上層以外の前記パッド用配線パターンは前記配線パターンと同一層で形成され、最上層以外の前記パッド用ビア導電体は前記ビア導電体と同一層で形成されている付記1〜4のいずれか1項記載の半導体装置。
(付記6)
最上層の前記パッド用配線パターンはアルミニウムを用いて形成され、前記ビア導電体および前記パッド用ビア導電体はタングステンを用いて形成されている付記1〜5のいずれか1項記載の半導体装置。
(付記7)
前記半導体基板の外周に沿って、前記パッド電極構造外側で、前記絶縁積層を貫通して形成された外側チップ耐湿リング、
をさらに有する付記1〜6のいずれか1項記載の半導体装置。
(付記8)
前記絶縁積層は、前記半導体素子を覆って前記半導体基板上に形成された窒化シリコン又は酸化窒化シリコンの下部保護膜を含み、
前記半導体素子に接続され、前記下部保護膜を貫通して上方に延在する下部ビア導電体と、
前記最下層のパッド用配線パターンの周辺部下面のループ状領域に接続され、下方に延在し、前記下部保護膜に達する下部ループ状壁部と、
をさらに有する付記1〜7のいずれか1項記載の半導体装置。
(付記9)
前記下部ビア導電体と前記下部ループ状壁部とが同一層で形成されている付記8記載の半導体装置。
(付記10)
前記半導体基板上方に形成され、下部電極と、酸化物強誘電体膜と、上部電極とを含む強誘電体キャパシタを更に有し、前記多層配線構造は前記強誘電体キャパシタ上方に配置されている付記1〜9のいずれか1項記載の半導体装置。
(付記11)
前記絶縁積層が、前記強誘電体キャパシタの下に、水分、水素を遮蔽する機能を有する下地保護膜を含む付記10記載の半導体装置。
(付記12)
前記下地保護膜が、酸化アルミニウム、酸化チタンのいずれかを用いて形成されている付記11記載の半導体装置。
(付記13)
前記絶縁積層が、前記柱状ビア導電体と交差する第1レベルに配置され、水分、水素を遮蔽する機能を有する第1絶縁バリア層を含む付記1〜12のいずれか1項記載の半導体装置。
(付記14)
前記絶縁積層が、前記第1レベルと異なる第2レベルに配置され、前記柱状ビア導電体と交差する、水分、水素を遮蔽する機能を有する第2絶縁バリア層をさらに含む付記13記載の半導体装置。
(付記15)
前記絶縁積層が、最上層の前記パッド用配線パターン上面に接する、水分、水素を遮蔽する機能を有する第3絶縁バリア層を含む付記1〜14のいずれか1項記載の半導体装置。
(付記16)
前記絶縁バリア層が、酸化アルミニウム、酸化チタニウムのいずれかを用いて形成されている付記13〜15のいずれか1項記載の半導体装置。
(付記17)
前記絶縁バリア層の厚さが、20−100nmの範囲内である付記16記載の半導体装置。
(付記18)
前記パッド用配線パターンの少なくとも1つは、前記パッドパターンと前記シールパターンと接続する第1配線部と、前記シールパターンからさらに外側に延在する第2配線部、または前記拡大パッドパターンから外側に延在する第3配線部をさらに有する付記1〜17のいずれか1項記載の半導体装置。
(付記19)
前記パッド電極構造より内側で、前記絶縁積層を貫通してループ状に形成され、前記第2または第3配線部と交差する部分で切りかかれている内側チップ耐湿リング
をさらに有する付記18記載の半導体装置。
(付記20)
複数のチップ領域を含む半導体基板の各チップ領域に複数の半導体素子を形成する工程と、
前記複数の半導体素子を覆って、前記半導体基板上に下部層間絶縁膜を形成する工程と、
前記下部層間絶縁膜上に、強誘電体キャパシタを形成する工程と、
前記強誘電体キャパシタを覆って、前記下部層間絶縁膜上に絶縁積層を形成する工程と、
前記絶縁積層中に配置された多層配線構造を形成する工程と、
前記半導体基板上方に配置され、前記多層配線構造に接続されたパッド電極構造を形成する工程であって、前記絶縁積層中に複数のパッド用配線パターンと、前記パッド用配線パターン間を接続するパッド用ビア導電体を含み、少なくとも最上層のパッド用配線パターンはパッドパターンと前記パッドパターンを距離をおいて取り囲むシールパターンを含み、最上層以外のパッド用配線パターンの少なくとも1つは連続した、前記シールパターンに対応する大きさの拡大パッドパターンを有し、前記パッド用ビア導電体は、前記パッドパターンに対応して配置された複数の柱状ビア導電体と前記シールパターンに対応して配置されたループ状壁部とを含み、前記パッド用配線パターンのパッドパターンまたは前記拡大パッドパターンと前記柱状ビア導電体とが積層ボンディングパッドを構成し、前記シールパターンおよび前記拡大パッドパターンの周縁部と前記ループ状壁部とが前記積層ボンディングパッドを取り囲み、水分、水素を遮蔽する機能を有する耐湿リングを形成するパッド電極構造を形成する工程と、
を含む半導体装置の製造方法。
Claims (9)
- 半導体基板と、
前記半導体基板に形成された複数の半導体素子を含む回路部と、
前記回路部を覆って、前記半導体基板上に形成された絶縁積層と、
前記絶縁積層中に形成され、配線パターンとビア導電体とを含む多層配線構造と、
前記半導体基板上方に形成され、前記多層配線構造に接続されたパッド電極構造であって、複数層のパッド用配線パターンと、前記パッド用配線パターン間を接続するパッド用ビア導電体を含み、少なくとも最上層のパッド用配線パターンはパッドパターンと前記パッドパターンから距離をおいて、ループ状に取り囲むシールパターンを含み、最上層以外のパッド用配線パターンの少なくとも1つは連続した、前記シールパターンに対応する大きさの拡大パッドパターンを有し、前記パッド用ビア導電体は、前記パッドパターンに対応して配置された複数の柱状ビア導電体と前記シールパターンに対応して配置されたループ状壁部とを含み、前記パッド用配線パターンのパッドパターンまたは前記拡大パッドパターンと前記柱状ビア導電体とが積層ボンディングパッドを構成し、前記拡大パッドパターンと前記シールパターンおよび前記ループ状壁部とが前記積層ボンディングパッドを取り囲み、水分、水素を遮蔽する機能を有するカップ状耐湿構造を形成するパッド電極構造と、
最上層の前記パッドパターンの周辺部上から上面の一部及び最上層の前記シールパターンの上面を連続して覆う、水分、水素を遮蔽する機能を有する第1絶縁バリア層と、
前記カップ状耐湿構造の底面と前記最上層のパッド用配線パターンとの間に配置され、少なくとも前記カップ状耐湿構造の中間位置を横断する、水分、水素を遮蔽する機能を有する第2絶縁バリア層と、
を有し、前記パッドパターンが亀裂を有さない場合、前記パッドパターン、前記第1絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第1の密閉容器を構成し、前記第2絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第2の密閉容器を構成する半導体装置。 - 最下層の前記パッド用配線パターンは、前記拡大パッドパターンを有し、その上の前記パッド用ビア導電体のループ状壁部と前記最下層のパッド用配線パターンは底の閉じた構造を構成する請求項1記載の半導体装置。
- 最上層、最下層以外の前記パッド用配線パターンの少なくとも1つが、前記拡大パッドパターンを有する請求項2記載の半導体装置。
- 最下層以外の前記パッド用配線層パターンが、前記パッドパターンと前記シールパターンを有する請求項2記載の半導体装置。
- 前記絶縁積層は、前記半導体素子を覆って前記半導体基板上に形成された窒化シリコン又は酸化窒化シリコンの下部保護膜を含み、
前記半導体素子に接続され、前記下部保護膜を貫通して上方に延在する下部ビア導電体と、
前記最下層のパッド用配線パターンの周辺部下面のループ状領域に接続され、下方に延在し、前記下部保護膜に達する下部ループ状壁部と、
をさらに有する請求項1〜4のいずれか1項記載の半導体装置。 - 前記半導体基板上方に形成され、下部電極と、酸化物強誘電体膜と、上部電極とを含む強誘電体キャパシタを更に有し、前記多層配線構造は前記強誘電体キャパシタ上方に配置されている請求項1〜5のいずれか1項記載の半導体装置。
- 前記カップ状耐湿構造の底面を構成するパッド用配線パターンの上に配置され、水分、水素を遮蔽する機能を有する第3絶縁バリア層をさらに含む請求項1〜6のいずれか1項記載の半導体装置。
- 前記第1絶縁バリア層及び第2絶縁バリア層は、酸化アルミニウム又は酸化チタニウムを用いて形成されている請求項1〜6のいずれか1項記載の半導体装置。
- 複数のチップ領域を含む半導体基板の各チップ領域に複数の半導体素子を形成する工程と、
前記複数の半導体素子を覆って、前記半導体基板上に下部層間絶縁膜を形成する工程と、
前記下部層間絶縁膜上に、強誘電体キャパシタを形成する工程と、
前記強誘電体キャパシタを覆って、前記下部層間絶縁膜上に絶縁積層を形成する工程と、
を含み、
前記絶縁積層は、多層配線構造と、前記多層配線構造に電気的に接続された、前記絶縁積層中に配置された複数のパッド用配線パターンと、前記パッド用配線パターン間を接続するパッド用ビア導電体を含み、少なくとも最上層のパッド用配線パターンはパッドパターンと前記パッドパターンから距離をおいてループ状に取り囲むシールパターンを含み、最上層以外のパッド用配線パターンの少なくとも1つは連続した、前記シールパターンに対応する大きさの拡大パッドパターンを有し、前記パッド用ビア導電体は、前記パッドパターンに対応して配置された複数の柱状ビア導電体と前記シールパターンに対応して配置されたループ状壁部とを含み、前記パッド用配線パターンのパッドパターンまたは前記拡大パッドパターンと前記柱状ビア導電体とが積層ボンディングパッドを構成し、前記拡大パッドパターンと前記シールパターンおよび前記ループ状壁部とが前記積層ボンディングパッドを取り囲み、水分、水素を遮蔽する機能を有するカップ状耐湿構造を形成するパッド電極構造とを含み、
最上層の前記パッドパターンの周辺部上から最上層の前記シールパターンの上面を連続して覆う、水分、水素を遮蔽する機能を有する第1絶縁バリア層と、前記カップ状耐湿構造の底面と前記最上層のパッド用配線パターンとの間に配置され、少なくとも前記カップ状耐湿構造の中間位置を横断する、水分、水素を遮蔽する機能を有する第2絶縁バリア層とを形成する工程と、
前記第1絶縁バリア層の一部を除去して、最上層の前記パッドパターンの上面を露出させる工程と、
を含み、前記パッドパターンが亀裂を有さない場合、前記パッドパターン、前記第1絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第1の密閉容器を構成し、前記第2絶縁バリア層、前記カップ状耐湿構造が水分、水素に対する第2の密閉容器を構成する、半導体装置の製造方法。
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LAPS | Cancellation because of no payment of annual fees |