JP5089808B2 - Lcdを製造するためのフォトレジスト剥離組成物 - Google Patents
Lcdを製造するためのフォトレジスト剥離組成物 Download PDFInfo
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- JP5089808B2 JP5089808B2 JP2011528961A JP2011528961A JP5089808B2 JP 5089808 B2 JP5089808 B2 JP 5089808B2 JP 2011528961 A JP2011528961 A JP 2011528961A JP 2011528961 A JP2011528961 A JP 2011528961A JP 5089808 B2 JP5089808 B2 JP 5089808B2
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- Prior art keywords
- photoresist
- photoresist stripping
- stripping composition
- weight
- organic solvent
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 65
- 239000000203 mixture Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002798 polar solvent Substances 0.000 claims description 11
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 6
- PRBXPAHXMGDVNQ-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]acetic acid Chemical compound OCCOCCOCC(O)=O PRBXPAHXMGDVNQ-UHFFFAOYSA-N 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 3
- RTGDFNSFWBGLEC-SYZQJQIISA-N mycophenolate mofetil Chemical compound COC1=C(C)C=2COC(=O)C=2C(O)=C1C\C=C(/C)CCC(=O)OCCN1CCOCC1 RTGDFNSFWBGLEC-SYZQJQIISA-N 0.000 claims 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 34
- 239000010949 copper Substances 0.000 description 25
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 150000002334 glycols Chemical class 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 150000003141 primary amines Chemical class 0.000 description 4
- 229930195734 saturated hydrocarbon Natural products 0.000 description 4
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- -1 hydroxyl ions Chemical class 0.000 description 3
- 150000003335 secondary amines Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 2
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- SHXWCVYOXRDMCX-UHFFFAOYSA-N 3,4-methylenedioxymethamphetamine Chemical compound CNC(C)CC1=CC=C2OCOC2=C1 SHXWCVYOXRDMCX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- MBDNRNMVTZADMQ-UHFFFAOYSA-N sulfolene Chemical compound O=S1(=O)CC=CC1 MBDNRNMVTZADMQ-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/06—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom containing only hydrogen and carbon atoms in addition to the ring nitrogen atom
- C07D213/08—Preparation by ring-closure
- C07D213/09—Preparation by ring-closure involving the use of ammonia, amines, amine salts, or nitriles
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/02—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
- C07D307/34—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
- C07D307/38—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with substituted hydrocarbon radicals attached to ring carbon atoms
- C07D307/40—Radicals substituted by oxygen atoms
- C07D307/46—Doubly bound oxygen atoms, or two oxygen atoms singly bound to the same carbon atom
- C07D307/48—Furfural
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
Description
(a)下記式(I):
(b)1〜60重量%の水;および
(c)20〜98重量%の有機溶媒であって、ヒドロキシル(C1〜C5)アルキル置換基で置換されており、1または複数の酸素原子を有する、4〜6員環の飽和または不飽和炭化水素鎖を形成する有機溶媒、
を含む組成物が提供される。
ヒドロキシルイオンの形成:RNH2+H2O→RNH3 ++OH−(ロス電子対(loss electron pair))
反応:Cu+6RNH2→Cu(RNH2)6 2
ヒドロキシルイオンの形成:R3N+H2O→R3NH++OH−(ロス電子対)
反応:Cu+6R3N→Cu(R3N)6 2
(a)下記式(I):
(b)1〜60重量%の水;及び
(c)10〜98重量%の有機溶媒であって、ヒドロキシル(C1〜C5)アルキル置換基で置換されており、1または複数の酸素原子を有する4〜6員環の飽和または不飽和炭化水素鎖を形成する有機溶媒、並びに
残りの重量分の極性溶媒、
を含む、フォトレジスト剥離組成物。
MDEA:メチルジエタノールアミン
MDG:ジエチレングリコールモノメチルエーテル
EDG:ジエチレングリコールモノエチルエーテル
BDG:ジエチレングリコールモノブチルエーテル
NMP:N−メチルピロリドン
DMSO:ジメチルスルホキシド
DMAC:ジメチルアセトアミド
DMF:ジメチルホルムアミド
MMF:モノメチルホルムアミド
THFA:テトラヒドロフルフリルアルコール
MDMA:メチルジエタノールアミン
Claims (5)
- LCDを製造するためのフォトレジスト剥離組成物であって、
(a)下記式(I):
(b)1〜60重量%の水;
(c)10〜98重量%の有機溶媒;および
残りの重量分の極性溶媒
を含み、
前記有機溶媒が、飽和または不飽和4〜6員炭化水素環中の1または複数の炭素原子が酸素原子で置換されてなる飽和または不飽和4〜6員環であって、かつ炭素数1〜5のヒドロキシアルキル置換基で置換されている飽和または不飽和4〜6員環である、
フォトレジスト剥離組成物。 - 前記第三級アルカノールアミンが、メチルジエタノールアミン、メチルジメタノールアミン、およびこれらの混合物からなる群から選択される、請求項1に記載のフォトレジスト剥離組成物。
- 前記有機溶媒が、以下の化合物:
- 前記フォトレジスト剥離組成物が、ジエチレングリコールモノメチルエーテル、ジエチレングリコールエチルエーテル、ジエチレングリコールモノブチエーテル、及びトリエチレングリコールエーテルからなる群から選択される少なくとも1つをさらに含む、請求項1に記載のフォトレジスト剥離組成物。
- 前記極性溶媒が、N−メチルピロリドン、スルホラン、ジメチルスルホキシド、ジメチルアセトアミド、MMF(モノエチルホルムアミド)、およびこれらの混合物からなる群から選択される、請求項1に記載のフォトレジスト剥離組成物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090078867A KR100950779B1 (ko) | 2009-08-25 | 2009-08-25 | Tft―lcd 통합공정용 포토레지스트 박리제 조성물 |
KR10-2009-0078867 | 2009-08-25 | ||
PCT/KR2010/005494 WO2011025180A2 (en) | 2009-08-25 | 2010-08-19 | A photoresist stripping composition for manufacturing lcd |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012500421A JP2012500421A (ja) | 2012-01-05 |
JP5089808B2 true JP5089808B2 (ja) | 2012-12-05 |
Family
ID=42219464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011528961A Active JP5089808B2 (ja) | 2009-08-25 | 2010-08-19 | Lcdを製造するためのフォトレジスト剥離組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9360761B2 (ja) |
JP (1) | JP5089808B2 (ja) |
KR (1) | KR100950779B1 (ja) |
CN (1) | CN102216855B (ja) |
TW (1) | TWI426362B (ja) |
WO (1) | WO2011025180A2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
JP5717519B2 (ja) * | 2011-04-15 | 2015-05-13 | パナソニック株式会社 | フォトレジスト用剥離液 |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
JP6040089B2 (ja) * | 2013-04-17 | 2016-12-07 | 富士フイルム株式会社 | レジスト除去液、これを用いたレジスト除去方法およびフォトマスクの製造方法 |
WO2014181992A1 (ko) * | 2013-05-07 | 2014-11-13 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
KR101668063B1 (ko) * | 2013-05-07 | 2016-10-20 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
JP2015011096A (ja) * | 2013-06-27 | 2015-01-19 | パナソニックIpマネジメント株式会社 | フォトレジスト用剥離液 |
JP5575318B1 (ja) * | 2013-09-02 | 2014-08-20 | パナソニック株式会社 | レジスト剥離液 |
KR102092336B1 (ko) | 2013-12-26 | 2020-03-23 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
TWI746419B (zh) * | 2014-02-06 | 2021-11-21 | 美商慧盛材料美國有限責任公司 | 光阻劑剝離溶液 |
US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
KR20150146285A (ko) | 2014-06-23 | 2015-12-31 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
JP2015011356A (ja) * | 2014-07-18 | 2015-01-19 | パナソニックIpマネジメント株式会社 | フォトレジスト用剥離液 |
KR102414295B1 (ko) * | 2016-01-22 | 2022-06-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
JP6813596B2 (ja) | 2016-05-23 | 2021-01-13 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 半導体基板からフォトレジストを除去するための剥離組成物 |
CN107820584B (zh) * | 2016-09-30 | 2019-10-18 | 松下知识产权经营株式会社 | 抗蚀剂剥离液 |
WO2018100595A1 (ja) * | 2016-11-29 | 2018-06-07 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
WO2020194419A1 (ja) * | 2019-03-25 | 2020-10-01 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
JP6692029B1 (ja) * | 2019-03-25 | 2020-05-13 | パナソニックIpマネジメント株式会社 | レジスト剥離液 |
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JP7458927B2 (ja) | 2020-07-28 | 2024-04-01 | 東京応化工業株式会社 | 処理液および基板の処理方法 |
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JP3477390B2 (ja) * | 1999-01-22 | 2003-12-10 | 花王株式会社 | 剥離剤組成物 |
US6310020B1 (en) | 1998-11-13 | 2001-10-30 | Kao Corporation | Stripping composition for resist |
JP4224651B2 (ja) | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
JP3792620B2 (ja) * | 2001-08-03 | 2006-07-05 | 日本電気株式会社 | 剥離剤組成物 |
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JP4661007B2 (ja) * | 2001-08-23 | 2011-03-30 | 昭和電工株式会社 | サイドウォール除去液 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
JP4035701B2 (ja) * | 2002-03-12 | 2008-01-23 | 三菱瓦斯化学株式会社 | レジスト剥離剤及びその使用方法 |
TWI295076B (en) * | 2002-09-19 | 2008-03-21 | Dongwoo Fine Chem Co Ltd | Washing liquid for semiconductor substrate and method of producing semiconductor device |
TWI315030B (en) * | 2003-06-26 | 2009-09-21 | Dongwoo Fine Chem Co Ltd | Photoresist stripper composition, and exfoliation method of a photoresist using it |
KR20050008410A (ko) | 2003-07-14 | 2005-01-21 | 김성진 | 구리배선에 대한 부식을 방지하는 포토레지스트 박리액조성물 |
JP4152928B2 (ja) * | 2004-08-02 | 2008-09-17 | 株式会社シンク・ラボラトリー | ポジ型感光性組成物 |
KR20070035722A (ko) * | 2005-09-28 | 2007-04-02 | 동우 화인켐 주식회사 | 포토레지스트 박리 조성물 및 이를 이용한 반도체 소자의제조방법 |
JP2009014938A (ja) | 2007-07-03 | 2009-01-22 | Toagosei Co Ltd | レジスト剥離剤組成物 |
KR20110016418A (ko) * | 2009-08-11 | 2011-02-17 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
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CN102216855B (zh) | 2013-11-13 |
WO2011025180A2 (en) | 2011-03-03 |
JP2012500421A (ja) | 2012-01-05 |
US20130345106A1 (en) | 2013-12-26 |
TW201107908A (en) | 2011-03-01 |
CN102216855A (zh) | 2011-10-12 |
TWI426362B (zh) | 2014-02-11 |
KR100950779B1 (ko) | 2010-04-02 |
WO2011025180A3 (en) | 2011-07-07 |
US9360761B2 (en) | 2016-06-07 |
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